KR100250350B1 - 절연 게이트형 반도체 장치의 제조방법 - Google Patents

절연 게이트형 반도체 장치의 제조방법 Download PDF

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Publication number
KR100250350B1
KR100250350B1 KR1019960020385A KR19960020385A KR100250350B1 KR 100250350 B1 KR100250350 B1 KR 100250350B1 KR 1019960020385 A KR1019960020385 A KR 1019960020385A KR 19960020385 A KR19960020385 A KR 19960020385A KR 100250350 B1 KR100250350 B1 KR 100250350B1
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KR
South Korea
Prior art keywords
semiconductor layer
conductivity type
forming
insulating film
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019960020385A
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English (en)
Korean (ko)
Other versions
KR970008651A (ko
Inventor
히데끼 다카하시
Original Assignee
다니구찌 이찌로오
미쓰비시덴키 가부시키가이샤
기타오카 다카시
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Application filed by 다니구찌 이찌로오, 미쓰비시덴키 가부시키가이샤, 기타오카 다카시 filed Critical 다니구찌 이찌로오
Publication of KR970008651A publication Critical patent/KR970008651A/ko
Application granted granted Critical
Publication of KR100250350B1 publication Critical patent/KR100250350B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Element Separation (AREA)
KR1019960020385A 1995-07-21 1996-06-07 절연 게이트형 반도체 장치의 제조방법 Expired - Lifetime KR100250350B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-185783 1995-07-21
JP18578395A JP3384198B2 (ja) 1995-07-21 1995-07-21 絶縁ゲート型半導体装置およびその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1019990045552A Division KR100292720B1 (ko) 1995-07-21 1999-10-20 절연 게이트형 반도체 장치

Publications (2)

Publication Number Publication Date
KR970008651A KR970008651A (ko) 1997-02-24
KR100250350B1 true KR100250350B1 (ko) 2000-04-01

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019960020385A Expired - Lifetime KR100250350B1 (ko) 1995-07-21 1996-06-07 절연 게이트형 반도체 장치의 제조방법
KR1019990045552A Expired - Lifetime KR100292720B1 (ko) 1995-07-21 1999-10-20 절연 게이트형 반도체 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1019990045552A Expired - Lifetime KR100292720B1 (ko) 1995-07-21 1999-10-20 절연 게이트형 반도체 장치

Country Status (5)

Country Link
US (2) US5801408A (https=)
EP (3) EP1237201B1 (https=)
JP (1) JP3384198B2 (https=)
KR (2) KR100250350B1 (https=)
DE (3) DE69637366T2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7429768B2 (en) 2003-12-26 2008-09-30 Nec Electronics Corporation Semiconductor device having a trench surrounding each of plural unit cells
US8841175B2 (en) 2012-03-09 2014-09-23 Mitsubishi Electric Corporation Vertical trench IGBT and method for manufacturing the same

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US6204533B1 (en) * 1995-06-02 2001-03-20 Siliconix Incorporated Vertical trench-gated power MOSFET having stripe geometry and high cell density
JP3410286B2 (ja) 1996-04-01 2003-05-26 三菱電機株式会社 絶縁ゲート型半導体装置
DE19727676A1 (de) * 1997-06-30 1999-01-07 Asea Brown Boveri MOS gesteuertes Leistungshalbleiterbauelement
JP3281844B2 (ja) * 1997-08-26 2002-05-13 三洋電機株式会社 半導体装置の製造方法
JP3164030B2 (ja) * 1997-09-19 2001-05-08 日本電気株式会社 縦型電界効果トランジスタの製造方法
JP3281847B2 (ja) * 1997-09-26 2002-05-13 三洋電機株式会社 半導体装置の製造方法
US6429481B1 (en) 1997-11-14 2002-08-06 Fairchild Semiconductor Corporation Field effect transistor and method of its manufacture
SE9800286D0 (sv) * 1998-02-02 1998-02-02 Abb Research Ltd A transistor of SiC
EP1060517A1 (de) 1998-02-27 2000-12-20 ABB Semiconductors AG Bipolartransistor mit isolierter gateelektrode
DE19808154A1 (de) * 1998-02-27 1999-09-02 Asea Brown Boveri Bipolartransistor mit isolierter Gateelektrode
WO1999056323A1 (fr) 1998-04-27 1999-11-04 Mitsubishi Denki Kabushiki Kaisha Dispositif semi-conducteur et son procede de fabrication
KR100451450B1 (ko) 1998-12-18 2004-10-06 인피니언 테크놀로지스 아게 바디 영역내에 트렌치 형상의 게이트-전극 및 추가 고도핑 층을 갖는 전계 효과 트랜지스터
GB2347014B (en) * 1999-02-18 2003-04-16 Zetex Plc Semiconductor device
US6351009B1 (en) * 1999-03-01 2002-02-26 Fairchild Semiconductor Corporation MOS-gated device having a buried gate and process for forming same
US6413822B2 (en) * 1999-04-22 2002-07-02 Advanced Analogic Technologies, Inc. Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer
JP2001085685A (ja) 1999-09-13 2001-03-30 Shindengen Electric Mfg Co Ltd トランジスタ
JP2001102575A (ja) * 1999-09-29 2001-04-13 Nec Corp 半導体装置とその温度検出方法
US6392273B1 (en) * 2000-01-14 2002-05-21 Rockwell Science Center, Llc Trench insulated-gate bipolar transistor with improved safe-operating-area
DE10009345C1 (de) * 2000-02-28 2001-07-19 Infineon Technologies Ag Feldeffekt-Transistoranordnung mit hoher Latch-up-Festigkeit und Verfahren zu deren Herstellung
DE10023950A1 (de) * 2000-05-16 2001-11-22 Bosch Gmbh Robert Halbleiter-Bauelement
JP2002110978A (ja) * 2000-10-02 2002-04-12 Toshiba Corp 電力用半導体素子
US6593620B1 (en) * 2000-10-06 2003-07-15 General Semiconductor, Inc. Trench DMOS transistor with embedded trench schottky rectifier
JP3708014B2 (ja) * 2000-10-20 2005-10-19 株式会社東芝 半導体装置
JP4088033B2 (ja) * 2000-11-27 2008-05-21 株式会社東芝 半導体装置
US6815767B2 (en) * 2001-02-01 2004-11-09 Mitsubishi Denki Kabushiki Kaisha Insulated gate transistor
US6734497B2 (en) * 2001-02-02 2004-05-11 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor, semiconductor device, method of manufacturing insulated-gate bipolar transistor, and method of manufacturing semiconductor device
JP4823435B2 (ja) * 2001-05-29 2011-11-24 三菱電機株式会社 半導体装置及びその製造方法
US7078296B2 (en) 2002-01-16 2006-07-18 Fairchild Semiconductor Corporation Self-aligned trench MOSFETs and methods for making the same
GB0208833D0 (en) * 2002-04-18 2002-05-29 Koninkl Philips Electronics Nv Trench-gate semiconductor devices
KR20050102655A (ko) * 2003-02-18 2005-10-26 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 반도체 장치 및 반도체 장치 제조 방법
JP2005057235A (ja) * 2003-07-24 2005-03-03 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ及びその製造方法、並びに、インバータ回路
JP4799829B2 (ja) * 2003-08-27 2011-10-26 三菱電機株式会社 絶縁ゲート型トランジスタ及びインバータ回路
US7259411B1 (en) * 2003-12-04 2007-08-21 National Semiconductor Corporation Vertical MOS transistor
JP2006012967A (ja) * 2004-06-23 2006-01-12 Toshiba Corp 半導体装置
JP2006120789A (ja) * 2004-10-20 2006-05-11 Toshiba Corp 半導体装置
JP4212552B2 (ja) * 2004-12-22 2009-01-21 株式会社東芝 半導体装置
JP4440188B2 (ja) * 2005-01-19 2010-03-24 パナソニック株式会社 半導体装置の製造方法
JP2006228906A (ja) * 2005-02-16 2006-08-31 Sanyo Electric Co Ltd 半導体装置およびその製造方法
JP4928753B2 (ja) * 2005-07-14 2012-05-09 株式会社東芝 トレンチゲート型半導体装置
JP4939012B2 (ja) * 2005-08-26 2012-05-23 ルネサスエレクトロニクス株式会社 半導体装置
JP2007081107A (ja) * 2005-09-14 2007-03-29 Elpida Memory Inc 半導体装置及びその製造方法
JP5984282B2 (ja) * 2006-04-27 2016-09-06 富士電機株式会社 縦型トレンチ型絶縁ゲートｍｏｓ半導体装置
JP5040240B2 (ja) * 2006-09-29 2012-10-03 三菱電機株式会社 絶縁ゲート型半導体装置
JP5383009B2 (ja) * 2007-07-17 2014-01-08 三菱電機株式会社 半導体装置の設計方法
JP5767430B2 (ja) * 2007-08-10 2015-08-19 ローム株式会社 半導体装置および半導体装置の製造方法
JP2009164183A (ja) * 2007-12-28 2009-07-23 Toshiba Corp 半導体装置及びその製造方法
US8022470B2 (en) * 2008-09-04 2011-09-20 Infineon Technologies Austria Ag Semiconductor device with a trench gate structure and method for the production thereof
JP5423018B2 (ja) * 2009-02-02 2014-02-19 三菱電機株式会社 半導体装置
TWI462294B (zh) * 2010-09-21 2014-11-21 Toshiba Kk Semiconductor element and manufacturing method thereof
JP5687582B2 (ja) 2010-09-21 2015-03-18 株式会社東芝 半導体素子およびその製造方法
US8384151B2 (en) * 2011-01-17 2013-02-26 Infineon Technologies Austria Ag Semiconductor device and a reverse conducting IGBT
JP5700649B2 (ja) * 2011-01-24 2015-04-15 旭化成エレクトロニクス株式会社 半導体装置の製造方法
CN102891082B (zh) * 2011-07-18 2015-09-23 中国科学院微电子研究所 绝缘栅双极晶体管及其制作方法
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JP6237408B2 (ja) * 2014-03-28 2017-11-29 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
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US20160013301A1 (en) * 2014-07-10 2016-01-14 Nuvoton Technology Corporation Semiconductor device and method of manufacturing the same
JP6507112B2 (ja) * 2016-03-16 2019-04-24 株式会社東芝 半導体装置
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JP6817116B2 (ja) * 2017-03-14 2021-01-20 エイブリック株式会社 半導体装置
JP2018207057A (ja) * 2017-06-09 2018-12-27 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
CN107516669B (zh) * 2017-08-07 2021-02-12 电子科技大学 一种igbt器件
JP7263715B2 (ja) 2018-08-30 2023-04-25 富士電機株式会社 半導体装置の製造方法および半導体装置

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7429768B2 (en) 2003-12-26 2008-09-30 Nec Electronics Corporation Semiconductor device having a trench surrounding each of plural unit cells
US7666744B2 (en) 2003-12-26 2010-02-23 Nec Electronics Corporation Method of manufacturing a semiconductor device having a trench surrounding plural unit cells
US8841175B2 (en) 2012-03-09 2014-09-23 Mitsubishi Electric Corporation Vertical trench IGBT and method for manufacturing the same
KR101444081B1 (ko) * 2012-03-09 2014-09-26 미쓰비시덴키 가부시키가이샤 종형 트렌치 ｉｇｂｔ 및 그 제조방법

Also Published As

Publication number Publication date
DE69636913D1 (de) 2007-03-29
EP1233457B1 (en) 2007-02-14
KR100292720B1 (ko) 2001-06-15
EP0755076B1 (en) 2003-07-30
US5801408A (en) 1998-09-01
DE69629251D1 (de) 2003-09-04
DE69629251T2 (de) 2004-04-22
JPH0936362A (ja) 1997-02-07
DE69636913T2 (de) 2007-11-15
EP0755076A3 (https=) 1997-02-19
DE69637366D1 (de) 2008-01-24
EP1233457A3 (en) 2003-04-23
JP3384198B2 (ja) 2003-03-10
US5960264A (en) 1999-09-28
EP1237201A3 (en) 2003-04-23
EP1237201A2 (en) 2002-09-04
EP0755076A2 (en) 1997-01-22
KR970008651A (ko) 1997-02-24
EP1237201B1 (en) 2007-12-12
EP1233457A2 (en) 2002-08-21
DE69637366T2 (de) 2008-12-04

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