JPWO2021005789A5 - - Google Patents
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- JPWO2021005789A5 JPWO2021005789A5 JP2021530457A JP2021530457A JPWO2021005789A5 JP WO2021005789 A5 JPWO2021005789 A5 JP WO2021005789A5 JP 2021530457 A JP2021530457 A JP 2021530457A JP 2021530457 A JP2021530457 A JP 2021530457A JP WO2021005789 A5 JPWO2021005789 A5 JP WO2021005789A5
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- 239000010410 layer Substances 0.000 claims description 844
- 239000004065 semiconductor Substances 0.000 claims description 171
- 239000000463 material Substances 0.000 claims description 148
- 239000012535 impurity Substances 0.000 claims description 120
- 238000000034 method Methods 0.000 claims description 91
- 239000004020 conductor Substances 0.000 claims description 87
- 238000004519 manufacturing process Methods 0.000 claims description 61
- 229910052751 metal Inorganic materials 0.000 claims description 51
- 239000002184 metal Substances 0.000 claims description 51
- 239000011229 interlayer Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 18
- 239000000370 acceptor Substances 0.000 claims description 17
- 239000002356 single layer Substances 0.000 claims description 17
- 230000002093 peripheral effect Effects 0.000 claims description 16
- 239000000386 donor Substances 0.000 claims description 15
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 10
- 230000003068 static effect Effects 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 59
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 30
- 238000001020 plasma etching Methods 0.000 description 19
- 238000001459 lithography Methods 0.000 description 15
- 238000002109 crystal growth method Methods 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 13
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 230000010354 integration Effects 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000009467 reduction Effects 0.000 description 5
- 238000005498 polishing Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
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- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2019/027541 WO2021005789A1 (ja) | 2019-07-11 | 2019-07-11 | 柱状半導体装置と、その製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021005789A1 JPWO2021005789A1 (https=) | 2021-01-14 |
| JPWO2021005789A5 true JPWO2021005789A5 (https=) | 2022-05-10 |
| JP7369471B2 JP7369471B2 (ja) | 2023-10-26 |
Family
ID=74114461
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021530457A Active JP7369471B2 (ja) | 2019-07-11 | 2019-07-11 | 柱状半導体装置と、その製造方法 |
| JP2021530488A Active JP7357387B2 (ja) | 2019-07-11 | 2020-03-19 | 柱状半導体装置と、その製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021530488A Active JP7357387B2 (ja) | 2019-07-11 | 2020-03-19 | 柱状半導体装置と、その製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US12127385B2 (https=) |
| JP (2) | JP7369471B2 (https=) |
| KR (2) | KR20220034051A (https=) |
| CN (2) | CN114127916A (https=) |
| TW (2) | TWI742750B (https=) |
| WO (2) | WO2021005789A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022234655A1 (ja) | 2021-05-07 | 2022-11-10 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 柱状半導体の製造方法 |
| KR102784170B1 (ko) * | 2021-09-06 | 2025-03-19 | 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 | 반도체 소자를 사용한 메모리 장치 |
| JP2023128046A (ja) * | 2022-03-02 | 2023-09-14 | キオクシア株式会社 | 半導体装置およびその製造方法 |
| WO2024116244A1 (ja) * | 2022-11-28 | 2024-06-06 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | メモリ素子を有した半導体装置 |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2703970B2 (ja) | 1989-01-17 | 1998-01-26 | 株式会社東芝 | Ｍｏｓ型半導体装置 |
| JP4077951B2 (ja) | 1998-01-14 | 2008-04-23 | 株式会社ルネサステクノロジ | 欠陥解析方法、記録媒体及び工程管理方法 |
| JP2009177200A (ja) * | 1998-05-01 | 2009-08-06 | Sony Corp | 半導体記憶装置 |
| JP3148745B2 (ja) * | 1999-08-20 | 2001-03-26 | 昭幸 木村 | オープンショーケース用シャッタ装置 |
| US7098502B2 (en) * | 2003-11-10 | 2006-08-29 | Freescale Semiconductor, Inc. | Transistor having three electrically isolated electrodes and method of formation |
| US7241655B2 (en) * | 2004-08-30 | 2007-07-10 | Micron Technology, Inc. | Method of fabricating a vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array |
| US7425491B2 (en) * | 2006-04-04 | 2008-09-16 | Micron Technology, Inc. | Nanowire transistor with surrounding gate |
| WO2009096001A1 (ja) * | 2008-01-29 | 2009-08-06 | Unisantis Electronics (Japan) Ltd. | 半導体記憶装置およびメモリ混載半導体装置、並びにそれらの製造方法 |
| US8598650B2 (en) * | 2008-01-29 | 2013-12-03 | Unisantis Electronics Singapore Pte Ltd. | Semiconductor device and production method therefor |
| US8378425B2 (en) | 2008-01-29 | 2013-02-19 | Unisantis Electronics Singapore Pte Ltd. | Semiconductor storage device |
| WO2009095999A1 (ja) * | 2008-01-29 | 2009-08-06 | Unisantis Electronics (Japan) Ltd. | 半導体記憶装置 |
| WO2009095998A1 (ja) * | 2008-01-29 | 2009-08-06 | Unisantis Electronics (Japan) Ltd. | 半導体記憶装置 |
| WO2009095997A1 (ja) * | 2008-01-29 | 2009-08-06 | Unisantis Electronics (Japan) Ltd. | 半導体装置およびその製造方法 |
| KR100949265B1 (ko) * | 2008-04-01 | 2010-03-25 | 주식회사 하이닉스반도체 | 반도체 소자 제조 방법 |
| WO2009153880A1 (ja) * | 2008-06-20 | 2009-12-23 | 日本ユニサンティスエレクトロニクス株式会社 | 半導体記憶装置 |
| US8530960B2 (en) | 2010-12-07 | 2013-09-10 | Unisantis Electronics Singapore Pte. Ltd. | Semiconductor device |
| JP2013069770A (ja) * | 2011-09-21 | 2013-04-18 | Elpida Memory Inc | 半導体装置及びその製造方法 |
| KR20140009509A (ko) * | 2012-05-18 | 2014-01-22 | 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 | 반도체 장치의 제조 방법 및 반도체 장치 |
| JP5973665B2 (ja) * | 2013-06-13 | 2016-08-23 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | Ｓｇｔを有する半導体装置とその製造方法 |
| WO2015022744A1 (ja) * | 2013-08-15 | 2015-02-19 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | Ｓｇｔを有する半導体装置の製造方法 |
| JP2015061038A (ja) * | 2013-09-20 | 2015-03-30 | マイクロン テクノロジー， インク． | 半導体装置 |
| KR20150101726A (ko) * | 2014-02-27 | 2015-09-04 | 에스케이하이닉스 주식회사 | 터널링 트랜지스터, 그를 포함하는 저항 변화 메모리 장치 및 그 제조방법 |
| WO2015162682A1 (ja) * | 2014-04-22 | 2015-10-29 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
| KR20150139255A (ko) * | 2014-06-03 | 2015-12-11 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조방법 |
| JP6297430B2 (ja) * | 2014-06-30 | 2018-03-20 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP5692884B1 (ja) * | 2014-08-19 | 2015-04-01 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. | Ｓｇｔを有する半導体装置の製造方法 |
| JP6104477B2 (ja) * | 2015-04-06 | 2017-03-29 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 柱状半導体メモリ装置と、その製造方法 |
| JP6378826B2 (ja) | 2015-04-06 | 2018-08-22 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | Ｓｇｔを有する柱状半導体装置と、その製造方法 |
| KR20180095836A (ko) * | 2015-12-18 | 2018-08-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 상기 반도체 장치를 포함한 표시 장치 |
| US9530863B1 (en) * | 2016-04-13 | 2016-12-27 | Globalfoundries Inc. | Methods of forming vertical transistor devices with self-aligned replacement gate structures |
| US10312229B2 (en) * | 2016-10-28 | 2019-06-04 | Synopsys, Inc. | Memory cells including vertical nanowire transistors |
| JP6850659B2 (ja) * | 2017-03-31 | 2021-03-31 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US10236379B2 (en) * | 2017-05-12 | 2019-03-19 | Globalfoundries Inc. | Vertical FET with self-aligned source/drain regions and gate length based on channel epitaxial growth process |
| JP2019009382A (ja) * | 2017-06-28 | 2019-01-17 | 東芝メモリ株式会社 | 半導体装置 |
| US10388766B2 (en) * | 2017-10-23 | 2019-08-20 | International Business Machines Corporation | Vertical transport FET (VFET) with dual top spacer |
| US10319833B1 (en) * | 2017-12-04 | 2019-06-11 | International Business Machines Corporation | Vertical transport field-effect transistor including air-gap top spacer |
| US10777658B2 (en) * | 2018-04-17 | 2020-09-15 | International Business Machines Corporation | Method and structure of fabricating I-shaped silicon vertical field-effect transistors |
| US10439044B1 (en) * | 2018-04-17 | 2019-10-08 | International Business Machines Corporation | Method and structure of fabricating I-shaped silicon germanium vertical field-effect transistors |
-
2019
- 2019-07-11 CN CN201980098346.0A patent/CN114127916A/zh active Pending
- 2019-07-11 WO PCT/JP2019/027541 patent/WO2021005789A1/ja not_active Ceased
- 2019-07-11 KR KR1020217042116A patent/KR20220034051A/ko active Pending
- 2019-07-11 JP JP2021530457A patent/JP7369471B2/ja active Active
-
2020
- 2020-03-19 CN CN202080050298.0A patent/CN114127917A/zh active Pending
- 2020-03-19 JP JP2021530488A patent/JP7357387B2/ja active Active
- 2020-03-19 WO PCT/JP2020/012471 patent/WO2021005842A1/ja not_active Ceased
- 2020-03-19 KR KR1020217042121A patent/KR102689607B1/ko active Active
- 2020-07-07 TW TW109122895A patent/TWI742750B/zh active
- 2020-07-10 TW TW109123404A patent/TWI750729B/zh active
-
2021
- 2021-12-30 US US17/565,738 patent/US12127385B2/en active Active
-
2022
- 2022-01-03 US US17/567,696 patent/US12127386B2/en active Active
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