TWI742750B - 柱狀半導體裝置及其製造方法 - Google Patents

柱狀半導體裝置及其製造方法 Download PDF

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TWI742750B
TWI742750B TW109122895A TW109122895A TWI742750B TW I742750 B TWI742750 B TW I742750B TW 109122895 A TW109122895 A TW 109122895A TW 109122895 A TW109122895 A TW 109122895A TW I742750 B TWI742750 B TW I742750B
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layer
impurity
semiconductor pillar
forming
aforementioned
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TW109122895A
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TW202121654A (zh
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舛岡富士雄
原田望
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新加坡商新加坡優尼山帝斯電子私人有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials

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  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW109122895A 2019-07-11 2020-07-07 柱狀半導體裝置及其製造方法 TWI742750B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2019/027541 WO2021005789A1 (ja) 2019-07-11 2019-07-11 柱状半導体装置と、その製造方法
WOPCT/JP2019/027541 2019-07-11

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TW202121654A TW202121654A (zh) 2021-06-01
TWI742750B true TWI742750B (zh) 2021-10-11

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TW109122895A TWI742750B (zh) 2019-07-11 2020-07-07 柱狀半導體裝置及其製造方法
TW109123404A TWI750729B (zh) 2019-07-11 2020-07-10 柱狀半導體裝置及其製造方法

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US (2) US12127385B2 (https=)
JP (2) JP7369471B2 (https=)
KR (2) KR20220034051A (https=)
CN (2) CN114127916A (https=)
TW (2) TWI742750B (https=)
WO (2) WO2021005789A1 (https=)

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KR102784170B1 (ko) * 2021-09-06 2025-03-19 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 반도체 소자를 사용한 메모리 장치
JP2023128046A (ja) * 2022-03-02 2023-09-14 キオクシア株式会社 半導体装置およびその製造方法
WO2024116244A1 (ja) * 2022-11-28 2024-06-06 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド メモリ素子を有した半導体装置

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US12127386B2 (en) 2024-10-22
KR102689607B1 (ko) 2024-07-29
WO2021005842A1 (ja) 2021-01-14
US20220130842A1 (en) 2022-04-28
TW202121655A (zh) 2021-06-01
US12127385B2 (en) 2024-10-22
CN114127916A (zh) 2022-03-01
JPWO2021005842A1 (https=) 2021-01-14
WO2021005789A8 (ja) 2021-06-10
CN114127917A (zh) 2022-03-01
US20220139928A1 (en) 2022-05-05
TW202121654A (zh) 2021-06-01
KR20220034051A (ko) 2022-03-17
JP7357387B2 (ja) 2023-10-06
KR20220012325A (ko) 2022-02-03
JPWO2021005789A1 (https=) 2021-01-14
TWI750729B (zh) 2021-12-21
WO2021005789A1 (ja) 2021-01-14
JP7369471B2 (ja) 2023-10-26

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