JP7369471B2 - 柱状半導体装置と、その製造方法 - Google Patents

柱状半導体装置と、その製造方法 Download PDF

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JP7369471B2
JP7369471B2 JP2021530457A JP2021530457A JP7369471B2 JP 7369471 B2 JP7369471 B2 JP 7369471B2 JP 2021530457 A JP2021530457 A JP 2021530457A JP 2021530457 A JP2021530457 A JP 2021530457A JP 7369471 B2 JP7369471 B2 JP 7369471B2
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JPWO2021005789A5 (https=
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富士雄 舛岡
望 原田
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Unisantis Electronics Singapore Pte Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials

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  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2021530457A 2019-07-11 2019-07-11 柱状半導体装置と、その製造方法 Active JP7369471B2 (ja)

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PCT/JP2019/027541 WO2021005789A1 (ja) 2019-07-11 2019-07-11 柱状半導体装置と、その製造方法

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JPWO2021005789A1 JPWO2021005789A1 (https=) 2021-01-14
JPWO2021005789A5 JPWO2021005789A5 (https=) 2022-05-10
JP7369471B2 true JP7369471B2 (ja) 2023-10-26

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JP2021530488A Active JP7357387B2 (ja) 2019-07-11 2020-03-19 柱状半導体装置と、その製造方法

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US (2) US12127385B2 (https=)
JP (2) JP7369471B2 (https=)
KR (2) KR20220034051A (https=)
CN (2) CN114127916A (https=)
TW (2) TWI742750B (https=)
WO (2) WO2021005789A1 (https=)

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WO2022234655A1 (ja) 2021-05-07 2022-11-10 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 柱状半導体の製造方法
KR102784170B1 (ko) * 2021-09-06 2025-03-19 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 반도체 소자를 사용한 메모리 장치
JP2023128046A (ja) * 2022-03-02 2023-09-14 キオクシア株式会社 半導体装置およびその製造方法
WO2024116244A1 (ja) * 2022-11-28 2024-06-06 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド メモリ素子を有した半導体装置

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JP2013069770A (ja) 2011-09-21 2013-04-18 Elpida Memory Inc 半導体装置及びその製造方法
JP2016021590A (ja) 1998-05-01 2016-02-04 ソニー株式会社 半導体記憶装置
WO2017208486A1 (ja) 2015-04-06 2017-12-07 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 柱状半導体装置の製造方法

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KR20150139255A (ko) * 2014-06-03 2015-12-11 에스케이하이닉스 주식회사 반도체 장치 및 그 제조방법
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WO2009096465A1 (ja) 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置
JP2013069770A (ja) 2011-09-21 2013-04-18 Elpida Memory Inc 半導体装置及びその製造方法
WO2017208486A1 (ja) 2015-04-06 2017-12-07 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 柱状半導体装置の製造方法
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US12127386B2 (en) 2024-10-22
KR102689607B1 (ko) 2024-07-29
WO2021005842A1 (ja) 2021-01-14
US20220130842A1 (en) 2022-04-28
TW202121655A (zh) 2021-06-01
US12127385B2 (en) 2024-10-22
CN114127916A (zh) 2022-03-01
JPWO2021005842A1 (https=) 2021-01-14
WO2021005789A8 (ja) 2021-06-10
CN114127917A (zh) 2022-03-01
TWI742750B (zh) 2021-10-11
US20220139928A1 (en) 2022-05-05
TW202121654A (zh) 2021-06-01
KR20220034051A (ko) 2022-03-17
JP7357387B2 (ja) 2023-10-06
KR20220012325A (ko) 2022-02-03
JPWO2021005789A1 (https=) 2021-01-14
TWI750729B (zh) 2021-12-21
WO2021005789A1 (ja) 2021-01-14

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