JPWO2010143306A1 - 不揮発性半導体記憶装置 - Google Patents
不揮発性半導体記憶装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 140
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000012535 impurity Substances 0.000 claims description 48
- 238000003860 storage Methods 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 9
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 188
- 229910052710 silicon Inorganic materials 0.000 description 188
- 239000010703 silicon Substances 0.000 description 188
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 133
- 229910052814 silicon oxide Inorganic materials 0.000 description 132
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- 238000001312 dry etching Methods 0.000 description 25
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 20
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 17
- 238000000151 deposition Methods 0.000 description 17
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- 238000005468 ion implantation Methods 0.000 description 8
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
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- 238000010586 diagram Methods 0.000 description 4
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- 238000007254 oxidation reaction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
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- 150000002500 ions Chemical class 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000005543 nano-size silicon particle Substances 0.000 description 2
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- OQNXPQOQCWVVHP-UHFFFAOYSA-N [Si].O=[Ge] Chemical compound [Si].O=[Ge] OQNXPQOQCWVVHP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- -1 lanthanum aluminum silicon oxide Chemical compound 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- KJXBRHIPHIVJCS-UHFFFAOYSA-N oxo(oxoalumanyloxy)lanthanum Chemical compound O=[Al]O[La]=O KJXBRHIPHIVJCS-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
Description
尚、本発明は、上述した各実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲で、各実施形態の一部を適宜組み合わせて実施することができる。
本発明によれば、レイヤー選択トランジスタ構造により、ソース線及びビット線が積層ストリングでそれぞれ共通の一本ずつとなり、メモリストリングを積層させたとしても長さの増大は一層ごとにレイヤー選択トランジスタを形成する領域のみとなるため、従来の構造に比べてその長さを短くすることが可能となる。また、配線数及び回路面積も同様に一層ごとにレイヤー選択トランジスタ一本が増加するのに対応する増大量に抑えることが可能となる。
Claims (10)
- 半導体基板と、前記半導体基板の表面に対して垂直な第1方向に積み重ねられ、前記半導体基板の表面に平行な第2方向に延びる第1乃至第nのメモリストリングス(nは2以上の自然数)と、前記第1乃至第nのメモリストリングスのうちの1つを選択する第1乃至第kのレイヤー選択トランジスタ(kは2以上の自然数)とを具備し、
前記第1乃至第nのメモリストリングスは、前記第1方向に互いに絶縁されて積み重ねられる第1乃至第nの半導体層と、前記第1乃至第nの半導体層の前記第1及び第2方向に垂直な第3方向の側面上に、第1の絶縁膜、電荷蓄積層、第2の絶縁膜及びコントロールゲート電極の順番で、前記第3方向に積み重ねられる第1の積層構造とを有し、
前記第1乃至第nのメモリストリングスは、前記第1乃至第nの半導体層をチャネルとし、前記第2方向に直列に接続される電気的に書き換え可能な第1乃至第mのメモリセル(mは2以上の自然数)を有し、
前記コントロールゲート電極は、前記第1乃至第nの半導体層に跨って形成され、
前記第1乃至第kのレイヤー選択トランジスタは、前記第1乃至第nの半導体層の前記第3方向の側面上に、第3の絶縁膜及び第1のセレクトゲート電極の順番で、前記第3方向に積み重ねられる第2の積層構造を有し、
前記第1乃至第kのレイヤー選択トランジスタは、前記第1乃至第nの半導体層をチャネルとし、前記第1乃至第mのメモリセルに対して前記第2方向に直列に接続され、
前記第1のセレクトゲート電極は、前記第1乃至第nの半導体層に跨って形成され、
前記第1乃至第kのレイヤー選択トランジスタの各々は、前記第1乃至第nの半導体層のうちの少なくとも1つで常時オンの制御不可能状態であり、残りの少なくとも1つの半導体層でオン/オフが可能である制御可能状態であり、
前記第1乃至第kのレイヤー選択トランジスタの前記第1乃至第nの半導体層での前記制御不可能状態/前記制御可能状態の関係は、互いに異なっている
ことを特徴とする不揮発性半導体記憶装置。 - 前記第1乃至第nの半導体層をチャネルとし、前記第1乃至第kのレイヤー選択トランジスタに対して前記第2方向に直列に接続される追加の選択トランジスタをさらに具備し、
前記追加の選択トランジスタは、前記第1乃至第nの半導体層の前記第3方向の側面上に、第4の絶縁膜及び第2のセレクトゲート電極の順番で、前記第3方向に積み重ねられる第3の積層構造を有し、
前記第2のセレクトゲート電極は、前記第1乃至第nの半導体層に跨って形成され、
前記追加の選択トランジスタは、前記第1乃至第nの半導体層の全てで前記制御可能状態である
ことを特徴とする請求項1に記載の不揮発性半導体記憶装置。 - 前記kは、前記nに等しく、
前記第1乃至第kのレイヤー選択トランジスタのうち前記第1乃至第nのメモリストリングスに最も近いレイヤー選択トランジスタは、前記第1乃至第nの半導体層のうち最上層の半導体層で前記制御不可能状態であり、
前記第1乃至第kのレイヤー選択トランジスタのうち前記第1乃至第nのメモリストリングスにi番目(iは、2〜n−1のうちの1つ)に近いレイヤー選択トランジスタは、前記第1乃至第nの半導体層のうち最上層からi番目の半導体層で前記制御不可能状態であり、
前記第1乃至第kのレイヤー選択トランジスタのうち前記第1乃至第nのメモリストリングスから最も遠いレイヤー選択トランジスタは、前記第1乃至第nの半導体層のうち最下層の半導体層で前記制御不可能状態であり、
前記制御不可能状態は、前記第1乃至第nの半導体層内に形成される不純物領域により実現し、前記第1乃至第nの半導体層は、前記不純物領域を介して前記第1乃至第nの半導体層とは別の半導体層により互いに結合されている
ことを特徴とする請求項1に記載の不揮発性半導体記憶装置。 - 前記第1乃至第nの半導体層をチャネルとし、前記第1乃至第nのレイヤー選択トランジスタに対して前記第2方向に直列に接続される追加の選択トランジスタをさらに具備し、
前記追加の選択トランジスタは、前記第1乃至第nの半導体層の前記第3方向の側面上に、第4の絶縁膜及び第2のセレクトゲート電極の順番で、前記第3方向に積み重ねられる第3の積層構造を有し、
前記第2のセレクトゲート電極は、前記第1乃至第nの半導体層に跨って形成され、
前記追加の選択トランジスタは、前記第1乃至第nの半導体層の全てで前記制御可能状態である
ことを特徴とする請求項3に記載の不揮発性半導体記憶装置。 - 前記第1乃至第nの半導体層は、少なくともエアーギャップを含んだ絶縁層により電気的に絶縁されていることを特徴とする請求項1に記載の不揮発性半導体記憶装置。
- 前記第1乃至第nの半導体層は、少なくともエアーギャップを含んだ絶縁層により電気的に絶縁されていることを特徴とする請求項3に記載の不揮発性半導体記憶装置。
- 前記第1乃至第nの半導体層の前記第3方向の2つの側面のうち前記第1及び第2の積層構造を有する側面とは反対側の側面上に電極をさらに具備することを特徴とする請求項5に記載の不揮発性半導体記憶装置。
- 前記第1乃至第nの半導体層の前記第3方向の2つの側面のうち前記第1及び第2の積層構造を有する側面とは反対側の側面上に電極をさらに具備することを特徴とする請求項6に記載の不揮発性半導体記憶装置。
- 前記第1乃至第nの半導体層の前記第2方向の一端に設けられ、前記第1乃至第nの半導体層を貫通する金属電極と、前記金属電極の周りの前記第1乃至第nの半導体層内に形成される拡散層とをさらに具備することを特徴とする請求項1に記載の不揮発性半導体記憶装置。
- 前記第1乃至第nの半導体層の前記第2方向の一端に設けられ、前記第1乃至第nの半導体層を貫通する金属電極と、前記金属電極の周りの前記第1乃至第nの半導体層内に形成される拡散層とをさらに具備することを特徴とする請求項3に記載の不揮発性半導体記憶装置。
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JP4403356B2 (ja) | 2002-10-29 | 2010-01-27 | ソニー株式会社 | 半導体メモリ及びその製造方法 |
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JP4300228B2 (ja) | 2006-08-28 | 2009-07-22 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP2008078404A (ja) * | 2006-09-21 | 2008-04-03 | Toshiba Corp | 半導体メモリ及びその製造方法 |
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US8779495B2 (en) | 2007-04-19 | 2014-07-15 | Qimonda Ag | Stacked SONOS memory |
KR20090048877A (ko) * | 2007-11-12 | 2009-05-15 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 동작 방법 |
US7915667B2 (en) * | 2008-06-11 | 2011-03-29 | Qimonda Ag | Integrated circuits having a contact region and methods for manufacturing the same |
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