JPS6457674A - Conductivity-modulation mosfet - Google Patents
Conductivity-modulation mosfetInfo
- Publication number
- JPS6457674A JPS6457674A JP62304634A JP30463487A JPS6457674A JP S6457674 A JPS6457674 A JP S6457674A JP 62304634 A JP62304634 A JP 62304634A JP 30463487 A JP30463487 A JP 30463487A JP S6457674 A JPS6457674 A JP S6457674A
- Authority
- JP
- Japan
- Prior art keywords
- diffused layer
- source
- drain
- conductivity type
- surface region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
- H01L29/745—Gate-turn-off devices with turn-off by field effect
- H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62304634A JPH0821713B2 (ja) | 1987-02-26 | 1987-12-03 | 導電変調型mosfet |
EP88301592A EP0280535B1 (en) | 1987-02-26 | 1988-02-24 | Conductivity-modulation metal oxide semiconductor field effect transistor |
DE3856480T DE3856480T2 (de) | 1987-02-26 | 1988-02-24 | MOS-Feldeffekt-Transistor mit Leitfähigkeitsmodulation |
US07/160,277 US4980743A (en) | 1987-02-26 | 1988-02-25 | Conductivity-modulation metal oxide semiconductor field effect transistor |
US07/399,342 US5105243A (en) | 1987-02-26 | 1989-08-25 | Conductivity-modulation metal oxide field effect transistor with single gate structure |
US07/563,720 US5124773A (en) | 1987-02-26 | 1990-08-07 | Conductivity-modulation metal oxide semiconductor field effect transistor |
US07/662,517 US5168333A (en) | 1987-02-26 | 1991-02-28 | Conductivity-modulation metal oxide semiconductor field effect transistor |
US07/823,834 US5237186A (en) | 1987-02-26 | 1992-01-21 | Conductivity-modulation metal oxide field effect transistor with single gate structure |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4130987 | 1987-02-26 | ||
JP62-41309 | 1987-02-26 | ||
JP11074387 | 1987-05-08 | ||
JP62-110743 | 1987-05-08 | ||
JP62304634A JPH0821713B2 (ja) | 1987-02-26 | 1987-12-03 | 導電変調型mosfet |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6457674A true JPS6457674A (en) | 1989-03-03 |
JPH0821713B2 JPH0821713B2 (ja) | 1996-03-04 |
Family
ID=27290772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62304634A Expired - Fee Related JPH0821713B2 (ja) | 1987-02-26 | 1987-12-03 | 導電変調型mosfet |
Country Status (4)
Country | Link |
---|---|
US (1) | US4980743A (ja) |
EP (1) | EP0280535B1 (ja) |
JP (1) | JPH0821713B2 (ja) |
DE (1) | DE3856480T2 (ja) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH039570A (ja) * | 1989-06-07 | 1991-01-17 | Nec Corp | 導電変調型電界効果トランジスタ |
JPWO2002097888A1 (ja) * | 2001-05-25 | 2004-09-16 | 三菱電機株式会社 | 電力用半導体装置 |
JP2009295684A (ja) * | 2008-06-03 | 2009-12-17 | National Institute Of Advanced Industrial & Technology | 半導体双方向スイッチング装置 |
JP2020047789A (ja) * | 2018-09-19 | 2020-03-26 | 株式会社東芝 | 半導体装置 |
JP2020155472A (ja) * | 2019-03-18 | 2020-09-24 | 株式会社東芝 | 半導体装置 |
JP2020155581A (ja) * | 2019-03-20 | 2020-09-24 | 株式会社東芝 | 半導体装置 |
US11217686B2 (en) | 2020-03-19 | 2022-01-04 | Kabushiki Kaisha Toshiba | Semiconductor device and semiconductor circuit |
WO2022210052A1 (ja) * | 2021-03-31 | 2022-10-06 | ローム株式会社 | 半導体装置 |
US11489066B2 (en) | 2020-11-06 | 2022-11-01 | Mitsubishi Electric Corporation | Semiconductor device |
US11563113B2 (en) | 2020-09-16 | 2023-01-24 | Kabushiki Kaisha Toshiba | Semiconductor device and integrated circuit |
US11575031B2 (en) | 2020-09-10 | 2023-02-07 | Kabushiki Kaisha Toshiba | Semiconductor element and semiconductor device |
US11984473B2 (en) | 2021-03-17 | 2024-05-14 | Kabushiki Kaisha Toshiba | Semiconductor device |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5105243A (en) * | 1987-02-26 | 1992-04-14 | Kabushiki Kaisha Toshiba | Conductivity-modulation metal oxide field effect transistor with single gate structure |
US5343067A (en) * | 1987-02-26 | 1994-08-30 | Kabushiki Kaisha Toshiba | High breakdown voltage semiconductor device |
ATE211306T1 (de) * | 1988-09-22 | 2002-01-15 | Koninkl Philips Electronics Nv | Laterale bipolare transistoranordnungen mit isolierter steuerelektrode mit geteilter anode |
GB8901342D0 (en) * | 1989-01-21 | 1989-03-15 | Lucas Ind Plc | Semiconductor device |
US5017992A (en) * | 1989-03-29 | 1991-05-21 | Asea Brown Boveri Ltd. | High blocking-capacity semiconductor component |
EP0394859A1 (de) * | 1989-04-28 | 1990-10-31 | Asea Brown Boveri Ag | Bidirektionals, abschaltbares Halbeiterbauelement |
JPH03104169A (ja) * | 1989-09-18 | 1991-05-01 | Mitsubishi Electric Corp | 半導体装置 |
JPH0795596B2 (ja) * | 1989-10-23 | 1995-10-11 | 三菱電機株式会社 | サイリスタ及びその製造方法 |
US5194394A (en) * | 1989-10-23 | 1993-03-16 | Mitsubishi Denki Kabushiki Kaisha | Thyristor and method of manufacturing the same |
US5155562A (en) * | 1990-02-14 | 1992-10-13 | Fuji Electric Co., Ltd. | Semiconductor device equipped with a conductivity modulation misfet |
JPH0795597B2 (ja) * | 1990-08-18 | 1995-10-11 | 三菱電機株式会社 | サイリスタおよびその製造方法 |
DE69233742D1 (de) * | 1991-01-31 | 2008-09-18 | Toshiba Kk | Halbleiterbauelement mit hoher Durchbruchspannung |
US5155563A (en) * | 1991-03-18 | 1992-10-13 | Motorola, Inc. | Semiconductor device having low source inductance |
JP2650519B2 (ja) * | 1991-07-25 | 1997-09-03 | 株式会社日立製作所 | 横型絶縁ゲートトランジスタ |
JP3203814B2 (ja) * | 1992-10-19 | 2001-08-27 | 富士電機株式会社 | 半導体装置 |
DE4244272A1 (de) * | 1992-12-28 | 1994-06-30 | Daimler Benz Ag | Feldeffektgesteuertes Halbleiterbauelement |
JP3182262B2 (ja) * | 1993-07-12 | 2001-07-03 | 株式会社東芝 | 半導体装置 |
EP0690509A1 (en) * | 1994-06-30 | 1996-01-03 | Texas Instruments Incorporated | Substrate contact for gate array base cell and method of forming same |
US5548133A (en) * | 1994-09-19 | 1996-08-20 | International Rectifier Corporation | IGBT with increased ruggedness |
US5731603A (en) * | 1995-08-24 | 1998-03-24 | Kabushiki Kaisha Toshiba | Lateral IGBT |
JP4357127B2 (ja) | 2000-03-03 | 2009-11-04 | 株式会社東芝 | 半導体装置 |
JP4566470B2 (ja) * | 2001-07-17 | 2010-10-20 | 三菱電機株式会社 | 絶縁ゲート型バイポーラトランジスタ |
JP4802306B2 (ja) * | 2003-12-01 | 2011-10-26 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置 |
JP5087818B2 (ja) * | 2005-03-25 | 2012-12-05 | 日亜化学工業株式会社 | 電界効果トランジスタ |
US9799731B2 (en) | 2013-06-24 | 2017-10-24 | Ideal Power, Inc. | Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors |
US9742385B2 (en) | 2013-06-24 | 2017-08-22 | Ideal Power, Inc. | Bidirectional semiconductor switch with passive turnoff |
EP3116028B1 (en) | 2013-06-24 | 2021-03-24 | Ideal Power Inc. | Systems, circuits, devices, and methods with bidirectional bipolar transistors |
US11637016B2 (en) | 2013-12-11 | 2023-04-25 | Ideal Power Inc. | Systems and methods for bidirectional device fabrication |
US9355853B2 (en) | 2013-12-11 | 2016-05-31 | Ideal Power Inc. | Systems and methods for bidirectional device fabrication |
EP3186888B1 (en) | 2014-11-06 | 2021-05-05 | Ideal Power Inc. | Circuits, methods, and systems with optimized operation of double-base bipolar junction transistors |
JP2016171231A (ja) * | 2015-03-13 | 2016-09-23 | 株式会社東芝 | 半導体装置および半導体パッケージ |
US11322609B2 (en) * | 2019-11-29 | 2022-05-03 | Taiwan Semiconductor Manufacturing Company Ltd. | High voltage device |
JP7330154B2 (ja) | 2020-09-16 | 2023-08-21 | 株式会社東芝 | 半導体装置及び半導体回路 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57120369A (en) * | 1980-12-02 | 1982-07-27 | Gen Electric | Gate enhanced rectifier |
JPS59132666A (ja) * | 1982-12-13 | 1984-07-30 | ゼネラル・エレクトリツク・カンパニイ | 二方向性絶縁ゲ−ト整流器の構造と作動方法 |
JPS59132667A (ja) * | 1982-12-13 | 1984-07-30 | ゼネラル・エレクトリツク・カンパニイ | 横形絶縁ゲ−ト整流器構造 |
JPS61185971A (ja) * | 1985-02-14 | 1986-08-19 | Toshiba Corp | 伝導度変調型半導体装置 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52132684A (en) * | 1976-04-29 | 1977-11-07 | Sony Corp | Insulating gate type field effect transistor |
US4199774A (en) * | 1978-09-18 | 1980-04-22 | The Board Of Trustees Of The Leland Stanford Junior University | Monolithic semiconductor switching device |
US4290077A (en) * | 1979-05-30 | 1981-09-15 | Xerox Corporation | High voltage MOSFET with inter-device isolation structure |
DE2945324A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit verbessertem schaltverhalten |
US4364073A (en) * | 1980-03-25 | 1982-12-14 | Rca Corporation | Power MOSFET with an anode region |
JPS57162359A (en) * | 1981-03-30 | 1982-10-06 | Toshiba Corp | Semiconductor device |
JPS5897866A (ja) * | 1981-12-08 | 1983-06-10 | Nippon Telegr & Teleph Corp <Ntt> | 絶縁ゲ−ト型電界効果トランジスタ |
US4816892A (en) * | 1982-02-03 | 1989-03-28 | General Electric Company | Semiconductor device having turn-on and turn-off capabilities |
US5014102A (en) * | 1982-04-01 | 1991-05-07 | General Electric Company | MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal |
SE431381B (sv) * | 1982-06-03 | 1984-01-30 | Asea Ab | Tvapoligt overstromsskydd |
GB2150753B (en) * | 1983-11-30 | 1987-04-01 | Toshiba Kk | Semiconductor device |
JPS60196974A (ja) * | 1984-03-19 | 1985-10-05 | Toshiba Corp | 導電変調型mosfet |
US4558243A (en) * | 1984-05-09 | 1985-12-10 | Eaton Corporation | Bidirectional power FET with shorting-channel off state |
JPS61123184A (ja) * | 1984-11-20 | 1986-06-11 | Toshiba Corp | 導電変調型mosfet |
JP2585505B2 (ja) * | 1984-09-29 | 1997-02-26 | 株式会社東芝 | 導電変調型mosfet |
JPS60254658A (ja) * | 1984-05-30 | 1985-12-16 | Toshiba Corp | 導電変調型mosfet |
US4672407A (en) * | 1984-05-30 | 1987-06-09 | Kabushiki Kaisha Toshiba | Conductivity modulated MOSFET |
DE3583897D1 (de) * | 1984-06-22 | 1991-10-02 | Hitachi Ltd | Halbleiterschalter. |
-
1987
- 1987-12-03 JP JP62304634A patent/JPH0821713B2/ja not_active Expired - Fee Related
-
1988
- 1988-02-24 DE DE3856480T patent/DE3856480T2/de not_active Expired - Lifetime
- 1988-02-24 EP EP88301592A patent/EP0280535B1/en not_active Expired - Lifetime
- 1988-02-25 US US07/160,277 patent/US4980743A/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57120369A (en) * | 1980-12-02 | 1982-07-27 | Gen Electric | Gate enhanced rectifier |
JPS59132666A (ja) * | 1982-12-13 | 1984-07-30 | ゼネラル・エレクトリツク・カンパニイ | 二方向性絶縁ゲ−ト整流器の構造と作動方法 |
JPS59132667A (ja) * | 1982-12-13 | 1984-07-30 | ゼネラル・エレクトリツク・カンパニイ | 横形絶縁ゲ−ト整流器構造 |
JPS61185971A (ja) * | 1985-02-14 | 1986-08-19 | Toshiba Corp | 伝導度変調型半導体装置 |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH039570A (ja) * | 1989-06-07 | 1991-01-17 | Nec Corp | 導電変調型電界効果トランジスタ |
JPWO2002097888A1 (ja) * | 2001-05-25 | 2004-09-16 | 三菱電機株式会社 | 電力用半導体装置 |
JP4712301B2 (ja) * | 2001-05-25 | 2011-06-29 | 三菱電機株式会社 | 電力用半導体装置 |
JP2009295684A (ja) * | 2008-06-03 | 2009-12-17 | National Institute Of Advanced Industrial & Technology | 半導体双方向スイッチング装置 |
JP2020047789A (ja) * | 2018-09-19 | 2020-03-26 | 株式会社東芝 | 半導体装置 |
CN110931553A (zh) * | 2018-09-19 | 2020-03-27 | 株式会社东芝 | 半导体装置 |
CN110931553B (zh) * | 2018-09-19 | 2024-01-02 | 株式会社东芝 | 半导体装置 |
JP2020155472A (ja) * | 2019-03-18 | 2020-09-24 | 株式会社東芝 | 半導体装置 |
US11164965B2 (en) | 2019-03-20 | 2021-11-02 | Kabushiki Kaisha Toshiba | Semiconductor device |
JP2020155581A (ja) * | 2019-03-20 | 2020-09-24 | 株式会社東芝 | 半導体装置 |
US11217686B2 (en) | 2020-03-19 | 2022-01-04 | Kabushiki Kaisha Toshiba | Semiconductor device and semiconductor circuit |
US11575031B2 (en) | 2020-09-10 | 2023-02-07 | Kabushiki Kaisha Toshiba | Semiconductor element and semiconductor device |
US11563113B2 (en) | 2020-09-16 | 2023-01-24 | Kabushiki Kaisha Toshiba | Semiconductor device and integrated circuit |
US11489066B2 (en) | 2020-11-06 | 2022-11-01 | Mitsubishi Electric Corporation | Semiconductor device |
US11984473B2 (en) | 2021-03-17 | 2024-05-14 | Kabushiki Kaisha Toshiba | Semiconductor device |
WO2022210052A1 (ja) * | 2021-03-31 | 2022-10-06 | ローム株式会社 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
EP0280535A2 (en) | 1988-08-31 |
US4980743A (en) | 1990-12-25 |
EP0280535A3 (en) | 1990-10-10 |
JPH0821713B2 (ja) | 1996-03-04 |
EP0280535B1 (en) | 2001-07-18 |
DE3856480T2 (de) | 2002-04-18 |
DE3856480D1 (de) | 2001-08-23 |
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