JPS56150830A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56150830A
JPS56150830A JP5413780A JP5413780A JPS56150830A JP S56150830 A JPS56150830 A JP S56150830A JP 5413780 A JP5413780 A JP 5413780A JP 5413780 A JP5413780 A JP 5413780A JP S56150830 A JPS56150830 A JP S56150830A
Authority
JP
Japan
Prior art keywords
film
resin
pad
section
polyimide resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5413780A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0347732B2 (show.php
Inventor
Kazuhiro Tsurumaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5413780A priority Critical patent/JPS56150830A/ja
Priority to DE19813116406 priority patent/DE3116406A1/de
Publication of JPS56150830A publication Critical patent/JPS56150830A/ja
Priority to US06/837,757 priority patent/US4733289A/en
Priority to US07/372,184 priority patent/US4990993A/en
Publication of JPH0347732B2 publication Critical patent/JPH0347732B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/60—
    • H10W74/121—
    • H10W74/147—
    • H10W70/60—
    • H10W72/01515—
    • H10W72/07336—
    • H10W72/075—
    • H10W72/325—
    • H10W72/352—
    • H10W72/536—
    • H10W72/5363—
    • H10W72/5524—
    • H10W72/59—
    • H10W72/884—
    • H10W72/923—
    • H10W72/952—
    • H10W72/983—
    • H10W74/00—
    • H10W90/736—
    • H10W90/756—

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP5413780A 1980-04-25 1980-04-25 Semiconductor device Granted JPS56150830A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP5413780A JPS56150830A (en) 1980-04-25 1980-04-25 Semiconductor device
DE19813116406 DE3116406A1 (de) 1980-04-25 1981-04-24 Halbleiteranordnung
US06/837,757 US4733289A (en) 1980-04-25 1986-03-10 Resin-molded semiconductor device using polyimide and nitride films for the passivation film
US07/372,184 US4990993A (en) 1980-04-25 1989-06-26 Resin-molded semiconductor device using polymide and nitride films for the passivation film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5413780A JPS56150830A (en) 1980-04-25 1980-04-25 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2177407A Division JPH0340430A (ja) 1990-07-06 1990-07-06 半導体装置

Publications (2)

Publication Number Publication Date
JPS56150830A true JPS56150830A (en) 1981-11-21
JPH0347732B2 JPH0347732B2 (show.php) 1991-07-22

Family

ID=12962181

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5413780A Granted JPS56150830A (en) 1980-04-25 1980-04-25 Semiconductor device

Country Status (3)

Country Link
US (2) US4733289A (show.php)
JP (1) JPS56150830A (show.php)
DE (1) DE3116406A1 (show.php)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59172258A (ja) * 1983-03-18 1984-09-28 Hitachi Ltd 半導体装置
JPS60140739A (ja) * 1983-12-28 1985-07-25 Hitachi Ltd パツシベ−シヨン構造を備えたプラスチツクｉｃパツケ−ジ
JPH02238627A (ja) * 1989-03-10 1990-09-20 Nec Corp 半導体装置
JPH0340430A (ja) * 1990-07-06 1991-02-21 Hitachi Ltd 半導体装置
WO1999049512A1 (en) * 1998-03-20 1999-09-30 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
JP2011014556A (ja) * 2009-06-30 2011-01-20 Hitachi Ltd 半導体装置とその製造方法

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56150830A (en) * 1980-04-25 1981-11-21 Hitachi Ltd Semiconductor device
JPS6010645A (ja) * 1983-06-30 1985-01-19 Toshiba Corp 樹脂封止型半導体装置
DE3327960A1 (de) * 1983-08-03 1985-02-14 Telefunken electronic GmbH, 7100 Heilbronn Halbleiteranordnung in einem isolierstoffgehaeuse
GB8401250D0 (en) * 1984-01-18 1984-02-22 British Telecomm Semiconductor fabrication
EP0177562A4 (en) * 1984-03-22 1987-06-03 Mostek Corp NITRIDE COMPOSITE LAYER.
JPS60223149A (ja) * 1984-04-19 1985-11-07 Hitachi Ltd 半導体装置
DE3421127A1 (de) * 1984-06-07 1985-12-12 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zum herstellen einer halbleiteranordnung
DE3473381D1 (en) * 1984-12-21 1988-09-15 Itt Ind Gmbh Deutsche Plastic encapsulated semiconductor component
US5111276A (en) * 1985-03-19 1992-05-05 National Semiconductor Corp. Thick bus metallization interconnect structure to reduce bus area
JPS6381948A (ja) * 1986-09-26 1988-04-12 Toshiba Corp 多層配線半導体装置
JPH0695517B2 (ja) * 1987-06-25 1994-11-24 日本電気株式会社 半導体装置
JPH01214141A (ja) * 1988-02-23 1989-08-28 Nec Corp フリップチップ型半導体装置
JPH077783B2 (ja) * 1988-03-18 1995-01-30 株式会社東芝 電気的接続部に銅もしくは銅合金製金属細線を配置する半導体装置
JPH02105418A (ja) * 1988-10-14 1990-04-18 Mitsubishi Electric Corp 樹脂封止型半導体装置
US5252844A (en) * 1988-11-17 1993-10-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a redundant circuit and method of manufacturing thereof
US5068711A (en) * 1989-03-20 1991-11-26 Fujitsu Limited Semiconductor device having a planarized surface
US5144407A (en) * 1989-07-03 1992-09-01 General Electric Company Semiconductor chip protection layer and protected chip
JPH03254137A (ja) * 1990-03-05 1991-11-13 Toshiba Corp 半導体集積回路装置
JP2593965B2 (ja) * 1991-01-29 1997-03-26 三菱電機株式会社 半導体装置
JPH04261049A (ja) * 1991-01-31 1992-09-17 Mitsubishi Electric Corp 半導体装置およびその製造方法
DK0573469T3 (da) * 1991-02-25 1994-11-28 Ake Gustafson Fremgangsmåde til fiksering af en vikling på et elektronisk kredsløb
US5281855A (en) * 1991-06-05 1994-01-25 Trovan Limited Integrated circuit device including means for facilitating connection of antenna lead wires to an integrated circuit die
US5223851A (en) 1991-06-05 1993-06-29 Trovan Limited Apparatus for facilitating interconnection of antenna lead wires to an integrated circuit and encapsulating the assembly to form an improved miniature transponder device
KR930006868A (ko) * 1991-09-11 1993-04-22 문정환 반도체 패키지
KR930011143A (ko) * 1991-11-14 1993-06-23 김광호 반도체장치 및 그 제조방법
US5298792A (en) * 1992-02-03 1994-03-29 Micron Technology, Inc. Integrated circuit device with bi-level contact landing pads
US5567981A (en) 1993-03-31 1996-10-22 Intel Corporation Bonding pad structure having an interposed rigid layer
US5596172A (en) * 1993-05-07 1997-01-21 Motorola, Inc. Planar encapsulation process
US5438022A (en) 1993-12-14 1995-08-01 At&T Global Information Solutions Company Method for using low dielectric constant material in integrated circuit fabrication
JPH07231015A (ja) * 1994-02-17 1995-08-29 Sanyo Electric Co Ltd 半導体装置及びその製造方法
KR100372995B1 (ko) * 1994-05-24 2003-03-31 히다치 가세고교 가부시끼가이샤 반도체기판위에목적하는패턴의수지막을형성하는방법,반도체칩,반도체패키지,및레지스트상박리액
KR100211070B1 (ko) * 1994-08-19 1999-07-15 아끼구사 나오유끼 반도체 장치 및 그 제조방법
JPH08162528A (ja) * 1994-10-03 1996-06-21 Sony Corp 半導体装置の層間絶縁膜構造
DE19540309A1 (de) * 1995-10-28 1997-04-30 Philips Patentverwaltung Halbleiterbauelement mit Passivierungsaufbau
KR0182503B1 (ko) * 1995-12-30 1999-04-15 김광호 와이어 볼 보다 작은 본딩 창을 갖는 반도체 칩과 그 제조 방법
US5750419A (en) * 1997-02-24 1998-05-12 Motorola, Inc. Process for forming a semiconductor device having a ferroelectric capacitor
US5976964A (en) * 1997-04-22 1999-11-02 Micron Technology, Inc. Method of improving interconnect of semiconductor device by utilizing a flattened ball bond
US6127721A (en) * 1997-09-30 2000-10-03 Siemens Aktiengesellschaft Soft passivation layer in semiconductor fabrication
US6600215B1 (en) 1998-04-02 2003-07-29 Micron Technology, Inc. Method and apparatus for coupling a semiconductor die to die terminals
US8178435B2 (en) * 1998-12-21 2012-05-15 Megica Corporation High performance system-on-chip inductor using post passivation process
US6303423B1 (en) * 1998-12-21 2001-10-16 Megic Corporation Method for forming high performance system-on-chip using post passivation process
US6803327B1 (en) 1999-04-05 2004-10-12 Taiwan Semiconductor Manufacturing Company Cost effective polymide process to solve passivation extrusion or damage and SOG delminates
EP1091407A1 (de) * 1999-10-04 2001-04-11 Infineon Technologies AG Überspannungsschutzanordnung für Halbleiterbausteine
KR100702120B1 (ko) * 2001-06-30 2007-03-30 주식회사 하이닉스반도체 반도체 소자의 본딩 패드 구조 및 그의 형성 방법
SG102639A1 (en) 2001-10-08 2004-03-26 Micron Technology Inc Apparatus and method for packing circuits
TWI236763B (en) * 2003-05-27 2005-07-21 Megic Corp High performance system-on-chip inductor using post passivation process
US7470997B2 (en) * 2003-07-23 2008-12-30 Megica Corporation Wirebond pad for semiconductor chip or wafer
US7169691B2 (en) * 2004-01-29 2007-01-30 Micron Technology, Inc. Method of fabricating wafer-level packaging with sidewall passivation and related apparatus
DE102004036140A1 (de) * 2004-07-26 2006-03-23 Infineon Technologies Ag Halbleiterbauelement
KR100729256B1 (ko) * 2005-01-13 2007-06-15 삼성전자주식회사 포토레지스트 조성물, 이를 이용한 포토레지스트 패턴의형성 방법 및 반도체 소자의 보호막 형성방법
JP2006303452A (ja) * 2005-03-25 2006-11-02 Sanyo Electric Co Ltd 半導体装置及びその製造方法
US8384189B2 (en) * 2005-03-29 2013-02-26 Megica Corporation High performance system-on-chip using post passivation process
JP2006351892A (ja) * 2005-06-17 2006-12-28 Rohm Co Ltd 半導体集積回路装置
US8421227B2 (en) * 2006-06-28 2013-04-16 Megica Corporation Semiconductor chip structure
US8193636B2 (en) * 2007-03-13 2012-06-05 Megica Corporation Chip assembly with interconnection by metal bump
US20100200981A1 (en) * 2009-02-09 2010-08-12 Advanced Semiconductor Engineering, Inc. Semiconductor package and method of manufacturing the same
TWI452640B (zh) * 2009-02-09 2014-09-11 日月光半導體製造股份有限公司 半導體封裝構造及其封裝方法
JP4968371B2 (ja) * 2010-06-30 2012-07-04 大日本印刷株式会社 センサデバイスの製造方法及びセンサデバイス
US20120267779A1 (en) * 2011-04-25 2012-10-25 Mediatek Inc. Semiconductor package
US20150255362A1 (en) * 2014-03-07 2015-09-10 Infineon Technologies Ag Semiconductor Device with a Passivation Layer and Method for Producing Thereof
JP6251810B2 (ja) 2014-07-30 2017-12-20 株式会社日立製作所 半導体装置、半導体装置の製造方法および電力変換装置
WO2018116785A1 (ja) 2016-12-20 2018-06-28 株式会社デンソー 半導体装置およびその製造方法
JP6515944B2 (ja) 2016-12-20 2019-05-22 株式会社デンソー 半導体装置およびその製造方法
JP2020047664A (ja) 2018-09-14 2020-03-26 キオクシア株式会社 半導体装置および半導体装置の作製方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS506279A (show.php) * 1973-05-18 1975-01-22
JPS521377A (en) * 1975-06-19 1977-01-07 Kelsey Hayes Co Mechanism of measuring and distributing valve

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US3911475A (en) * 1972-04-19 1975-10-07 Westinghouse Electric Corp Encapsulated solid state electronic devices having a sealed lead-encapsulant interface
US4001870A (en) * 1972-08-18 1977-01-04 Hitachi, Ltd. Isolating protective film for semiconductor devices and method for making the same
US3945030A (en) * 1973-01-15 1976-03-16 Signetics Corporation Semiconductor structure having contact openings with sloped side walls
DE2403149A1 (de) * 1974-01-23 1975-07-24 Siemens Ag Halbleitervorrichtung
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JPS5176078A (en) * 1974-12-23 1976-07-01 Hitachi Ltd Handaboshokumakuo hodokoshita handotaisochi
JPS5851425B2 (ja) * 1975-08-22 1983-11-16 株式会社日立製作所 ハンドウタイソウチ
DE2548060C2 (de) * 1975-10-27 1984-06-20 Siemens AG, 1000 Berlin und 8000 München Halbleitervorrichtung und Verfahren zu ihrer Herstellung
JPS5258469A (en) * 1975-11-10 1977-05-13 Hitachi Ltd Resin-molded type semiconductor device
JPS5258491A (en) * 1975-11-10 1977-05-13 Hitachi Ltd Semiconductor device
JPS5271068A (en) * 1975-12-10 1977-06-14 Masao Yamada Solid parking zone
JPS5352367A (en) * 1976-10-25 1978-05-12 Hitachi Ltd Electronic parts
US4091406A (en) * 1976-11-01 1978-05-23 Rca Corporation Combination glass/low temperature deposited Siw Nx Hy O.sub.z
JPS5414672A (en) * 1977-07-06 1979-02-03 Hitachi Ltd Bonding electrode structure of semiconductor device
US4248920A (en) * 1978-04-26 1981-02-03 Tokyo Shibaura Denki Kabushiki Kaisha Resin-sealed semiconductor device
JPS5519850A (en) * 1978-07-31 1980-02-12 Hitachi Ltd Semiconductor
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Patent Citations (2)

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JPS506279A (show.php) * 1973-05-18 1975-01-22
JPS521377A (en) * 1975-06-19 1977-01-07 Kelsey Hayes Co Mechanism of measuring and distributing valve

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59172258A (ja) * 1983-03-18 1984-09-28 Hitachi Ltd 半導体装置
JPS60140739A (ja) * 1983-12-28 1985-07-25 Hitachi Ltd パツシベ−シヨン構造を備えたプラスチツクｉｃパツケ−ジ
JPH02238627A (ja) * 1989-03-10 1990-09-20 Nec Corp 半導体装置
JPH0340430A (ja) * 1990-07-06 1991-02-21 Hitachi Ltd 半導体装置
WO1999049512A1 (en) * 1998-03-20 1999-09-30 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
JP2011014556A (ja) * 2009-06-30 2011-01-20 Hitachi Ltd 半導体装置とその製造方法

Also Published As

Publication number Publication date
US4733289A (en) 1988-03-22
US4990993A (en) 1991-02-05
DE3116406A1 (de) 1982-06-16
JPH0347732B2 (show.php) 1991-07-22

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