JPS5662340A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5662340A
JPS5662340A JP13762779A JP13762779A JPS5662340A JP S5662340 A JPS5662340 A JP S5662340A JP 13762779 A JP13762779 A JP 13762779A JP 13762779 A JP13762779 A JP 13762779A JP S5662340 A JPS5662340 A JP S5662340A
Authority
JP
Japan
Prior art keywords
bonding pad
hole
protective film
film
wiring layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13762779A
Other languages
Japanese (ja)
Inventor
Akira Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13762779A priority Critical patent/JPS5662340A/en
Publication of JPS5662340A publication Critical patent/JPS5662340A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To prevent corrosion of a bonding pad for a higher humidity resistance by keeping a PSG film from speading immediately below and near the pad. CONSTITUTION:A PSG film 13 having a hole 13a for arranging a bonding pad is formed on the first protective film 12 convering the surface of a semiconductor substrate 10. Then, a bonding pad 14A connected to a wiring layer 14 is arranged on a part of the protective film 12 exposed into the hole 13a in such a manner as to be smaller than the hole 13a. A hole smaller than the bonding pad is formed through the second protective film covering respective surfaces of the first protective film 12, the wiring layer 14, the bonding pad 14 and the PSG film 13 to expose a part of the bonding pad.
JP13762779A 1979-10-26 1979-10-26 Semiconductor device Pending JPS5662340A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13762779A JPS5662340A (en) 1979-10-26 1979-10-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13762779A JPS5662340A (en) 1979-10-26 1979-10-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5662340A true JPS5662340A (en) 1981-05-28

Family

ID=15203073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13762779A Pending JPS5662340A (en) 1979-10-26 1979-10-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5662340A (en)

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