JPS56107570A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56107570A
JPS56107570A JP1188980A JP1188980A JPS56107570A JP S56107570 A JPS56107570 A JP S56107570A JP 1188980 A JP1188980 A JP 1188980A JP 1188980 A JP1188980 A JP 1188980A JP S56107570 A JPS56107570 A JP S56107570A
Authority
JP
Japan
Prior art keywords
film
corrosion resistance
polycrystalline silicon
constitution
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1188980A
Other languages
Japanese (ja)
Inventor
Isao Nishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1188980A priority Critical patent/JPS56107570A/en
Publication of JPS56107570A publication Critical patent/JPS56107570A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To improve corrosion resistance of a device by covering and protecting the device including chip circumferential domains with polycrystalline silicon. CONSTITUTION:A silicon oxide film 2 according to heating oxidation and a phosphorus glass film 3 according to vapor phase growth are grown successively on the main surface of a silicon semiconductor substrate 1, and a protected layer by a polycrystalline silicon film 7 is formed circumferentially of chips of said films 2, 3. Next, an aluminum layer 4 is formed as an internal wiring for circuit, which is covered with a surface protective film 5. Corrosion resistance and adhesion are improved by the above constitution, therefore the air and moisture are completely prevented from incoming even if the device is enclosed in a resin-sealed package, thus improving reliability.
JP1188980A 1980-01-30 1980-01-30 Semiconductor device Pending JPS56107570A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1188980A JPS56107570A (en) 1980-01-30 1980-01-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1188980A JPS56107570A (en) 1980-01-30 1980-01-30 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56107570A true JPS56107570A (en) 1981-08-26

Family

ID=11790287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1188980A Pending JPS56107570A (en) 1980-01-30 1980-01-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56107570A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4733289A (en) * 1980-04-25 1988-03-22 Hitachi, Ltd. Resin-molded semiconductor device using polyimide and nitride films for the passivation film
US6781216B2 (en) * 1999-12-27 2004-08-24 Oki Electric Industry Co., Ltd. Semiconductor device having wiring patterns with insulating layer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342391A (en) * 1976-09-30 1978-04-17 Standex Int Corp Block for bundled assembly
JPS5348474A (en) * 1976-10-15 1978-05-01 Hitachi Ltd Electronic parts

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342391A (en) * 1976-09-30 1978-04-17 Standex Int Corp Block for bundled assembly
JPS5348474A (en) * 1976-10-15 1978-05-01 Hitachi Ltd Electronic parts

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4733289A (en) * 1980-04-25 1988-03-22 Hitachi, Ltd. Resin-molded semiconductor device using polyimide and nitride films for the passivation film
US6781216B2 (en) * 1999-12-27 2004-08-24 Oki Electric Industry Co., Ltd. Semiconductor device having wiring patterns with insulating layer

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