JP6251810B2 - 半導体装置、半導体装置の製造方法および電力変換装置 - Google Patents
半導体装置、半導体装置の製造方法および電力変換装置 Download PDFInfo
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Description
パワー半導体モジュールは、用途に応じて各種のパワー半導体セルを単独ないしは組み合わせてパッケージ化したものである。例えば電気鉄道用のモジュールでは、シリコンのIGBT(絶縁ゲートバイポーラトランジスタ、Insulated Gate Bipolar Transistor)と、環流用のPNダイオードを組み合わせた構成が一般的である。実際の製品では、例えば電流値として600A〜1800A、耐圧は1.7kV〜6.5kVのクラスに分類されるものが多い。モジュール内部の回路構成も、インバータ1相の1アームを構成する1in1型から、2アーム分を内蔵する2in1型など、用途に応じて組み合わせに種類がある。
この発明は上述した事情に鑑みてなされたものであり、樹脂によるワイヤ接合部の被覆を、高い信頼性で、かつ容易に実現できる半導体装置、半導体装置の製造方法および電力変換装置を提供することを目的とする。
〈第1実施形態の構成〉
次に、本発明の第1実施形態のパワー半導体モジュールの構成を図1を参照し説明する。なお、本モジュールは、耐圧3.3kVで電流容量1200Aの、スイッチング素子群としてのIGBTと、ダイオード素子群としてのPNダイオードとが搭載されたものである。
PNダイオードチップ12は、高温鉛ハンダ35により絶縁基板22上の回路配線金属37に接合されている。PNダイオードチップ12の上面にはアルミ電極31が形成されており、ここにワイヤ13が超音波ボンディング技術により接合されている。この接合部分を「接合部57」と呼ぶ。接合部57の周辺にはワイヤ補強樹脂40(第1の樹脂膜)がコートされている。ワイヤ補強樹脂40の膜厚は平坦部で10μmほどであるが、接合部57の周辺では塗布時の表面張力により数十μm〜百μm程度がワイヤ13に吸い上げられている。これにより、ワイヤ補強樹脂40は、接合部57を局所的に補強できる形状で被覆している。
(チップの搭載)
次に、上述した構造を実現するための製造工程について説明する。図4はPNダイオードチップ12を絶縁基板22に搭載した状態の断面図である。上述のように、チップ12の絶縁基板22への接合には、高温鉛ハンダ35が用いられている。
次に、ディスペンサを用いて、チップ12の上面周縁部に拡散防止樹脂34が塗布される。すなわち、図5に示すようにディスペンサのノズル42をチップ12の上面周縁部の上方に位置させ、ノズル42を走査させつつ拡散防止樹脂34を吐出させる。拡散防止樹脂34の塗布領域の線幅や膜厚は、ノズル42とチップ12とのギャップ長、ノズル径、ノズルの走査速度、樹脂の吐出圧や温度を調整することで制御できる。塗布直後の拡散防止樹脂34の膜厚は最大で500μm程度である。
次に、拡散防止樹脂34をある程度硬化させる。そのことを、本実施形態においては「仮硬化」と呼ぶ。最初に「100℃,30分」、引き続いて「150℃,1時間」の熱処理が実施され、これによって拡散防止樹脂34は後続する工程に充分に耐えられる程度に硬化される。本実施形態においては、拡散防止樹脂34およびワイヤ補強樹脂40として同系統の樹脂を選択したため、両者の溶剤にも共通成分が含まれる。従って、仮に、拡散防止樹脂34を仮硬化させることなくワイヤ補強樹脂40を塗布すると、その際に拡散防止樹脂34が大きく溶出する可能性がある。本実施形態においては、ワイヤ補強樹脂40を塗布する前に拡散防止樹脂34を仮硬化させたため、そのような事態を未然に防止できる。
拡散防止樹脂34の仮硬化が完了すると、ワイヤ13がチップ12の上面のアルミ電極31にボンディングされる。このワイヤボンディングを実施した状態を図6に示す。ワイヤ13は超音波ボンディング技術によりアルミ電極31に接合されるが、接合部57に樹脂が付着していると接合不良が起こる。このため、上述した「拡散防止樹脂34の塗布」の工程では図6の接合部57が形成される領域には樹脂が侵入しないように、ディスペンサーの塗布領域と、塗布後の樹脂拡がりが制御されている。本実施形態においては、拡散防止樹脂34は30Pa・s程度の高粘度なペースト状態で塗布されるから、不要な樹脂拡がりは抑制できる。
ワイヤボンディングが完了すると、ワイヤ補強樹脂40が塗布される。その状態を図7に示す。ワイヤ補強樹脂40も、拡散防止樹脂34と同様にディスペンサによって塗布される。但し、塗布時のワイヤ補強樹脂40の粘度は1Pa・s程度と低く、すなわち流動性がよく、これをチップ12の上面中央付近に滴下すると、ワイヤ補強樹脂40は自ら拡がり、滴下部周囲に存在する複数のワイヤボンディングの接合部57に行き渡る。また、接合部57の周辺においてワイヤ13がアルミ電極31から立ち上がる箇所においては、ワイヤ補強樹脂40が表面張力で吸い上げられることにより、肉厚部58が形成される。肉厚部58では、他の領域と比較してワイヤ補強樹脂40の膜厚が大きくなっており、これによって接合部57を補強する効果が増している。
ワイヤ補強樹脂40の塗布が完了すると、拡散防止樹脂34とワイヤ補強樹脂40に対する本硬化が行われる。すなわち、最初に「100℃,30分」、引き続いて「200℃,1時間」の熱処理が実施され、これによって拡散防止樹脂34とワイヤ補強樹脂40が本硬化される。2本のワイヤ13,13をボンディングし、本硬化後が終了した状態のチップ12の平面図を図8に示す。
ワイヤ補強樹脂40のコート厚さを所望の値以下に制御するためには、粘性の低い液体状の樹脂を用いることが望ましい。仮に、拡散防止樹脂34を設けなかったとすると、ワイヤ13の接合部57近傍のみに滴下したい樹脂がチップ上面に拡がり、場合によってはチップ周辺から溢れ出るなどの問題が生じ得る。チップ外へ漏れ出たワイヤ補強樹脂40が絶縁基板22上の端子接続領域にかかると、各種端子(主端子や補助端子など)のハンダ接合やメタルボンディング接合に影響を与えるため、接続不良や信頼性不良につながるため、このような事態は避けることが望ましい。また、基板周辺へ溢れ出た樹脂が絶縁基板22の裏面にかかると絶縁基板22のベースプレートへの接合に影響を与えるため、このような事態も避けることが望ましい。一方、樹脂形成工程は自動化されており、チップ上にディスペンサー等でワイヤ補強樹脂40が自動滴下されるため、接合部のみを狙って樹脂を局所微量滴下するような制御は難しく、簡易な方法で樹脂形成を行う技術が求められていた。
〈第2実施形態の構成〉
次に、本発明の第2実施形態のパワー半導体モジュールの構成を説明する。なお、第2実施形態において、第1実施形態の各部に対応する部分には同一の符号を付し、その説明を省略する。
第2実施形態のモジュールは、耐圧3.3kVで電流容量1200Aの、スイッチング素子群としてのシリコンのIGBTと、ダイオード素子群としてのSiC(シリコンカーバイド)を用いたSBD(Schottky Barrier Diode、以下SiC−SBD)とを搭載して成るSiCハイブリッドパワー半導体モジュールである。
上述のように、本実施形態の拡散防止樹脂74は、ポリエーテルアミド系樹脂を用いたため、230kV/mm程度という高い絶縁破壊電界強度を有している。一方、ワイヤ補強樹脂40は第1実施形態と同様にポリアミドイミド系樹脂を用いたため、絶縁破壊電界強度は150kV/mm程度になる。この値は、拡散防止樹脂74よりは若干下がるものの、シリコーンゲル36の絶縁破壊電界強度14kV/mmと比較すると、相当に高い値である。
本発明は上述した第1,第2実施形態に限定されるものではなく、例えば以下のように種々の変形が可能である。
・第1,第2実施形態においては、本発明をパワー半導体モジュールに適用した例を説明したが、本発明はパワー半導体モジュールに限られず、種々の電力変換装置に適用することができる。例えば、一つのパッケージの中にインバータ、コンバータなどを含めてサイクロコンバータ、マトリックスコンバータを構成したものなども本発明の範疇に含まれる。
12,…,12 PNダイオードチップ(半導体チップ)
13,…,13 ワイヤ
14,…,14 SiC−SBDチップ(半導体チップ)
21 電極主端子
22,23 絶縁基板
27 共通エミッタ(ソース)回路パターン(回路パターン)
28 主端子コンタクト
31 アルミ電極(表面電極)
32 ターミネーション領域
34 拡散防止樹脂(第2の樹脂膜)
35 高温鉛ハンダ
36 シリコーンゲル(ゲル状封止材)
37 回路配線金属
40 ワイヤ補強樹脂(第1の樹脂膜)
57 接合部
58 肉厚部
65 SiO2膜(二酸化ケイ素層)
66 ポリイミド膜
71 ショットキー電極
72 ターミネーション領域
74 拡散防止樹脂(第2の樹脂膜)
Claims (9)
- ワイヤが接続される表面電極を形成した半導体チップと、
前記ワイヤと前記表面電極との接合部を被覆する第1の樹脂膜と、
前記表面電極の形成面の周縁部を被覆し、前記第1の樹脂膜に接するとともに前記第1の樹脂膜よりも膜厚の厚い第2の樹脂膜と、
前記半導体チップ、前記第1の樹脂膜および前記第2の樹脂膜を覆うゲル状封止材と、
を有することを特徴とする半導体装置。 - 前記半導体チップは、前記表面電極の形成面の周縁部に二酸化ケイ素層を形成して成るものであり、
前記第2の樹脂膜の誘電率は、前記二酸化ケイ素層の誘電率以下であり、かつ、前記ゲル状封止材の誘電率以上である
ことを特徴とする請求項1に記載の半導体装置。 - 前記第1の樹脂膜は、少なくともポリアミドイミド樹脂を含むことを特徴とする請求項1に記載の半導体装置。
- 前記第2の樹脂膜は、少なくともポリエーテルアミド樹脂を含むことを特徴とする請求項1または2に記載の半導体装置。
- 前記第2の樹脂膜は、少なくともポリイミド系樹脂を含むことを特徴とする請求項1または2に記載の半導体装置。
- 前記半導体チップは、ワイドバンドギャップ半導体から成ることを特徴とする請求項1または2に記載の半導体装置。
- 前記半導体チップは、シリコンカーバイドから成ることを特徴とする請求項1または2に記載の半導体装置。
- ワイヤが接続される表面電極を形成した半導体チップに対して、前記表面電極の形成面の周縁部を被覆する第2の樹脂膜を形成する過程と、
前記ワイヤを前記表面電極に接続する過程と、
前記ワイヤと前記表面電極との接合部を被覆するとともに、前記第2の樹脂膜よりも膜厚の薄い第1の樹脂膜を形成する過程と
を有することを特徴とする半導体装置の製造方法。 - 少なくとも一の半導体装置を有する電力変換装置であって、
前記半導体装置は、
ワイヤが接続される表面電極を形成した半導体チップと、
前記ワイヤと前記表面電極との接合部を被覆する第1の樹脂膜と、
前記表面電極の形成面の周縁部を被覆し、前記第1の樹脂膜に接するとともに前記第1の樹脂膜よりも膜厚の厚い第2の樹脂膜と、
前記半導体チップ、前記第1の樹脂膜および前記第2の樹脂膜を覆うゲル状封止材と、
を有することを特徴とする電力変換装置。
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