CN114747000A - 半导体装置、电力变换装置以及半导体装置的制造方法 - Google Patents

半导体装置、电力变换装置以及半导体装置的制造方法 Download PDF

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CN114747000A
CN114747000A CN201980102607.1A CN201980102607A CN114747000A CN 114747000 A CN114747000 A CN 114747000A CN 201980102607 A CN201980102607 A CN 201980102607A CN 114747000 A CN114747000 A CN 114747000A
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resin member
semiconductor device
surface electrode
convex portion
conductive
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人见晴子
原田耕三
坂本健
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

半导体装置(50)具备半导体元件(1)、至少一个第1树脂部件(2)以及至少一个导电线(3)。半导体元件(1)包括表面电极(10)和本体部(11)。至少一个第1树脂部件(2)配置于表面电极(10)的第2面(10t)。至少一个导电线(3)包括接合部(30)。至少一个第1树脂部件(2)包括凸部(20)。凸部(20)向相对表面电极(10)与本体部(11)相反的一侧突出。至少一个导电线(3)包括凹部(31)。凹部(31)与接合部(30)相邻。凹部(31)沿着凸部(20)延伸。凹部(31)与凸部(20)嵌合。

Description

半导体装置、电力变换装置以及半导体装置的制造方法
技术领域
本发明涉及半导体装置、电力变换装置以及半导体装置的制造方法。
背景技术
以往，有具备半导体元件、在接合部与半导体元件的电极接合的导电线以及覆盖导电线的接合部和电极的第1树脂部件的半导体装置。例如，在WO2016/016970号公报(专利文献1)记载的半导体装置中，配置于电极之上的第1树脂部件能够遍布至导电线的接合部的端部。
现有技术文献
专利文献
专利文献1：WO2016/016970号公报
发明内容
在上述公报刊载的半导体装置中，第1树脂部件的粘度低到第1树脂部件能够在电极之上流动的程度。因此，为了抑制第1树脂部件从电极之上流出，需要在电极的周缘还设置具有比第1树脂部件厚的膜厚的第2树脂膜。因此，存在半导体装置的构造变得复杂这样的问题。
本发明是鉴于上述课题完成的，其目的在于提供能够在导电线与电极之间使第1树脂部件遍布至导电线的接合部的端部并且具有简易的构造的半导体装置、电力变换装置以及半导体装置的制造方法。
本发明的半导体装置具备半导体元件、至少一个第1树脂部件、以及至少一个导电线。半导体元件包括本体部和表面电极。表面电极具有第1面以及第2面。第1面与本体部接合。第2面与第1面对置。至少一个第1树脂部件配置于表面电极的第2面。至少一个导电线包括接合部。接合部与至少一个第1树脂部件相邻。接合部与第2面接合。至少一个第1树脂部件包括凸部。凸部向相对表面电极与本体部相反的一侧突出。至少一个导电线包括凹部。凹部与接合部相邻。凹部沿着凸部延伸。凹部与凸部嵌合。
根据本发明的半导体装置，至少一个导电线的凹部与接合部相邻。凹部与至少一个第1树脂部件的凸部嵌合。因此，能够使第1树脂部件的凸部遍布至接合部的端部。另外，至少一个导电线的凹部与第1树脂部的凸部嵌合。因此，能够提供具有简易的构造的半导体装置。
附图说明
图1是概略地示出实施方式1所涉及的半导体装置的结构的剖面图。
图2是概略地示出实施方式1所涉及的半导体装置的结构的图1的II区域的放大顶视图。
图3是概略地示出实施方式1所涉及的半导体装置的结构的图1的II区域的放大剖面图。
图4是示出第1树脂部件以及导电线的尺寸，与图3对应的放大剖面图。
图5是概略地示出实施方式1所涉及的半导体装置的其他结构的图1的II区域的放大剖面图。
图6是沿着图3的VI-VI线的剖面图。
图7是沿着图3的VII-VII线的剖面图。
图8是沿着图3的VIII-VIII线的剖面图。
图9是沿着图3的IX-IX线的剖面图。
图10是概略性地示出实施方式1的第1变形例所涉及的半导体装置的结构，与图1的II区域对应的放大顶视图。
图11是概略性地示出实施方式1的第2变形例所涉及的半导体装置的结构，与图1的II区域对应的放大顶视图。
图12是概略性地示出实施方式1的第2变形例所涉及的半导体装置的结构，与图1的II区域对应的放大剖面图。
图13是概略地示出实施方式1所涉及的半导体装置的制造方法的流程图。
图14是概略地示出实施方式1所涉及的半导体装置的制造方法中的第1树脂部件以及第1电极的剖面图。
图15是概略地示出实施方式1所涉及的半导体装置的制造方法中的分配器、第1树脂部件以及第1电极的剖面图。
图16是概略地示出实施方式1所涉及的半导体装置的其他制造方法的流程图。
图17是概略地示出实施方式2所涉及的半导体装置的结构的剖面图。
图18是概略地示出实施方式2所涉及的半导体装置的结构的图17的XVIII区域的放大剖面图。
图19是概略地示出实施方式2所涉及的半导体装置的结构的图17的XVIII区域的放大顶视图。
图20是概略性地示出实施方式2的变形例所涉及的半导体装置的结构，与图19对应的放大顶视图。
图21是概略地示出实施方式2所涉及的半导体装置的制造方法的流程图。
图22是概略地示出实施方式3所涉及的电力变换系统的结构的框图。
(符号说明)
1：半导体元件；2：第1树脂部件；3：线；4：第2树脂部件；7：第3树脂；10：表面电极；10t：第1面；10b：第2面；11：本体部；20：凸部；30：接合部；31：凹部；32：立起部；33：立起部；50：半导体装置；100：电源；200：电力变换装置；201：主变换电路；202：半导体装置；203：控制电路；300：负载。
具体实施方式
以下，根据附图，说明实施方式。此外，以下，对同一或者相当的部分附加同一符号，不反复重复的说明。
实施方式1.
<关于半导体装置50的结构>
使用图1，说明实施方式1所涉及的半导体装置50的结构。如图1所示，半导体装置50包括半导体元件1、至少一个第1树脂部件2、至少一个导电线3、电路基板5以及壳体6。半导体装置50也可以包括密封树脂部件4。半导体装置50是电力用的功率半导体装置。
<关于半导体元件1的结构>
接下来，使用图1，说明实施方式1所涉及的半导体元件1的结构。如图1所示，半导体元件1包括表面电极10、本体部11以及背面电极12。表面电极10具有第1面10b以及第2面10t。第1面10b与本体部11接合。第2面10t与第1面10b对置。在本实施方式中，将表面电极10的第2面10t与第1面10b对置的方向设为第1方向(Z轴方向)。
半导体元件1是电力用的功率半导体元件。半导体元件1例如既可以是绝缘栅极型双极性晶体管(IGBT：Insulated Gate Bipolar Transistor)以及金属氧化物半导体场效应晶体管(MOSFET：Metal Oxide Semiconductor Field Effect Transistor)等开关元件，也可以是肖特基势垒二极管等整流元件。半导体元件1的材料例如是硅(Si)。半导体元件1的材料例如也可以包含碳化硅(SiC)、氮化镓(GaN)或者金刚石等宽带隙半导体材料。
对表面电极10接合至少一个导电线3。表面电极10的第2面10t与至少一个导电线3面对。背面电极12与电路基板5接合。表面电极10以及背面电极12夹着本体部11。
表面电极10以及背面电极12的材料例如是包含硅(Si)的铝(Al)合金。表面电极10以及背面电极12也可以用未图示的至少一个覆盖层覆盖。未图示的至少一个覆盖层的材料例如是镍(Ni)或者金(Au)。未图示的至少一个覆盖层也可以包括未图示的多个覆盖层。未图示的多个覆盖层也可以层叠。
<关于第1树脂部件2的结构>
接下来，使用图1～图5，说明实施方式1所涉及的第1树脂部件2的结构。此外，在图2～图5中，为便于说明未图示密封树脂部件4(参照图1)。如图1所示，至少一个第1树脂部件2配置于表面电极10的第2面10t。如图2所示，至少一个第1树脂部件2在顶视时，与至少一个导电线3交叉。如图3所示，至少一个第1树脂部件2各自的从第3方向(Y轴方向)观察时的形状是基于曲线结构的山形的形状。至少一个第1树脂部件2配置于表面电极10的第2面10t与至少一个导电线3之间。
如图3所示，至少一个第1树脂部件2包括凸部20。凸部20向相对表面电极10与本体部11相反的一侧突出。凸部20是沿着后述的凹部31的凸面。凸部20包括凸部内侧端2i以及凸部外侧端2o。凸部内侧端2i与后述的接合部30以及凹部31相邻。凸部外侧端2o设置于相对凸部内侧端2i与接合部30相反的一侧。
如图3所示，在本实施方式中，至少一个第1树脂部件2包括一方第1树脂部件2a以及另一方第1树脂部件2b。一方第1树脂部件2a从另一方第1树脂部件2b隔开空间地配置。一方第1树脂部件2a包括包含于凸部20的一方凸部20a。一方凸部20a包括包含于凸部内侧端2i的一方凸部内侧端2ai和包含于凸部外侧端2o的一方凸部外侧端2ao。
另一方第1树脂部件2b包括包含于凸部20的另一方凸部20b。另一方凸部20b包括包含于凸部内侧端2i的另一方凸部内侧端2bi和包含于凸部外侧端2o的另一方凸部外侧端2bo。
如图4所示，至少一个第1树脂部件2的第1方向(Z轴方向)的尺寸H2是设置有接合部30的部分的至少一个导电线3的第1方向(Z轴方向)的尺寸H3的例如0.2倍以上且小于1倍。至少一个第1树脂部件2的各个第1树脂部件的第1方向(Z轴方向)的尺寸是从表面电极10的第2面10t至凸部20的顶部的尺寸。
至少一个第1树脂部件2的第2方向(X轴方向)的尺寸W2是接合部30的第3方向(Y轴方向)的尺寸的例如0.5倍以上且10倍以下。第1树脂部件2的第2方向(X轴方向)的尺寸是从凸部20的凸部内侧端2i至凸部外侧端2o的尺寸。
至少一个第1树脂部件2的各个第1树脂部件包含聚酰亚胺系树脂以及聚酰胺系树脂中的至少任意一个。至少一个第1树脂部件2的材料是具有高的耐热性的树脂。
至少一个第1树脂部件2的粘度例如是50Pa·s以上且150Pa·s以下。此外，在本实施方式中，通过在JIS标准5600-2-3中决定的锥板粘度计法测量粘度。
至少一个第1树脂部件2的触变指数例如是1.1以上。至少一个第1树脂部件2的触变指数例如也可以是2.5以上。此外，在本实施方式中，触变指数是在JIS标准K6833-1中决定的触变指数。
第1树脂部件2也可以具有比半导体装置50的最高使用温度高的玻璃转移温度。第1树脂部件2的玻璃转移温度例如也可以是150℃以上。第1树脂部件2也可以包含未图示的填充物。包含于第1树脂部件2的未图示的填充物的材料例如是金属或者橡胶。
如图5所示，凸部20也可以包括下摆部204和突出部205。下摆部204与第2面10t相接。突出部205向相对下摆部204与第2面10t相反的一侧突出。在凸部20包括下摆部204和突出部205的情况下，凸部20的第1方向(Z轴方向)的尺寸是从第2面10t至凸部20的顶部的尺寸。
<关于导电线3的结构>
接下来，使用图3～图9，说明实施方式1所涉及的导电线3的结构。此外，在图3～图9中，为便于说明未图示密封树脂部件4(参照图1)。如图3所示，至少一个导电线3包括接合部30。接合部30与至少一个第1树脂部件2相邻。接合部30与第2面10t接合。至少一个导电线3包括凹部31。凹部31与接合部30相邻。凹部31沿着凸部20延伸。凹部31与凸部20嵌合。
在本实施方式中，将沿着第2面10t从接合部30朝向凹部31的方向设为第2方向(X轴方向)。第2方向(X轴方向)与接合部30的长度方向相同。将与第1方向(Z轴方向)以及第2方向(X轴方向)这两方正交的方向设为第3方向(Y轴方向)。第3方向(Y轴方向)与接合部30的宽度方向相同。
如图3所示，接合部30沿着第2面10t被一方凸部20a和另一方凸部20b夹入。接合部30包括接合部一方端30a以及接合部另一方端30b。接合部一方端30a与一方凸部内侧端2ai相邻。接合部另一方端30b与另一方凸部内侧端2bi相邻。接合部30的第2方向(X轴方向)的尺寸是从接合部一方端30a至接合部另一方端30b的沿着表面电极10的第2面10t的尺寸。
在本实施方式中，接合部30仅在接合部一方端30a以及接合部另一方端30b与第1树脂部件2相接。接合部30未被第1树脂部件2包围。接合部一方端30a与从接合部一方端30a侧向接合部另一方端30b侧延伸的一方第1树脂部件2a相接。接合部另一方端30b与从接合部另一方端30b侧向接合部一方端30a侧延伸的另一方第1树脂部件2b相接。
如图3所示，凹部31与凸部20以及接合部30相邻。凹部31是沿着凸部20的凹面。凹部31在顶视时与凸部20重叠。在本实施方式中，凹部31包括一方凹部31a以及另一方凹部31b。一方凹部31a与另一方凹部31b夹入接合部30。一方凹部31a与一方第1树脂部件2a的一方凸部20a嵌合。一方凹部31a在接合部一方端30a与接合部30以及一方第1树脂部件2a相邻。另一方凹部31b与另一方第1树脂部件2b的另一方凸部20b嵌合。另一方凹部31b在接合部另一方端30b与接合部30以及另一方第1树脂部件2b相邻。
如图1所示，至少一个导电线3与电路基板5的导电电路图案51接合。至少一个导电线3例如也可以通过引线接合器键合到表面电极10以及导电电路图案51。
至少一个导电线3例如通过楔形工具键合。如图6所示，在至少一个导电线3通过楔形工具键合的情况下，接合部30的剖面形状是大致三角形。如图7所示，在至少一个导电线3通过楔形工具键合的情况下，凹部31的剖面形状是大致三角形。如图8以及图9所示，向相对凹部31与接合部30相反的一侧延伸的延伸部离开第2面10t以及至少一个第1树脂部件2。
如图3所示，至少一个导电线3包括线上表面3t以及线下表面3b。线下表面3b与表面电极10的第2面10t面对。线上表面3t与线下表面3b对置。
至少一个导电线3的材料例如是金(Au)、铝(Al)或者铜(Cu)等金属。
<关于密封树脂部件4的结构>
接下来，使用图1，说明实施方式1所涉及的密封树脂部件4的结构。如图1所示，密封树脂部件4密封半导体元件1、至少一个第1树脂部件2以及至少一个导电线3。密封树脂部件4既可以密封导电线3的至少一部分，也可以密封导电线3的整体。密封树脂部件4的材料例如是绝缘树脂材料。半导体装置50既可以包括密封树脂部件4，也可以不包括密封树脂部件4。
<关于电路基板5的结构>
接下来，使用图1，说明实施方式1所涉及的电路基板5的结构。如图1所示，电路基板5包括导电电路图案51、绝缘基板52以及导电板53。导电电路图案51、绝缘基板52以及导电板53按照导电电路图案51、绝缘基板52、导电板53的顺序层叠。绝缘基板52在X-Y平面上延伸。绝缘基板52的材料例如是氧化铝(Al2O3)、氮化铝(AlN)或者氮化硅(Si3N4)等无机材料(陶瓷材料)等。绝缘基板52包括绝缘基板上表面和与绝缘基板上表面对置的绝缘基板下表面。导电电路图案51设置于绝缘基板上表面。导电板53设置于绝缘基板下表面。导电电路图案51以及导电板53的材料例如是铜(Cu)或者铝(Al)等金属。
对导电电路图案51接合半导体元件1的背面电极12。背面电极12例如通过未图示的焊料或者金属微粒子烧结体等与导电电路图案51接合。
<关于壳体6>
接下来，使用图1，说明实施方式1所涉及的壳体6的结构。如图1所示，壳体6包括散热器61以及外壳62。半导体装置50通过壳体6构成为壳体类型的模块。密封树脂部件4至少部分性地填充到壳体6的内部空间。
对散热器61安装有电路基板5。电路基板5的导电板53例如通过电热油脂等未图示的接合部件被接合到散热器61。从半导体元件1产生的热经由电路基板5被传递到散热器61。传递到散热器61的热被扩散到半导体装置50的外部。散热器61的材料例如是铝(Al)等金属。
外壳62包围半导体元件1、至少一个第1树脂部件2、至少一个导电线3、电路基板5以及密封树脂部件4。外壳62安装于散热器61的周缘。外壳62的材料例如是聚苯硫醚(PPS)或者聚对苯二甲酸丁二醇酯(PBT)等绝缘树脂。
<关于第1变形例的结构>
以下，根据图10，说明实施方式1的第1变形例。此外，以下，对同一或者相当的部分附加同一符号，不反复重复的说明。
如图10所示，在实施方式1的第1变形例中，至少一个导电线3包括多个导电线3。多个导电线3各自的凹部31与凸部20嵌合。在本实施方式中，至少一个第1树脂部件2跨越多个导电线3地形成。至少一个第1树脂部件2的各个第1树脂部件与多个导电线3交叉。在实施方式1的变形例中的至少一个导电线3包括多个导电线3的方面，实施方式1的第1变形例与实施方式1不同。
<关于第2变形例的结构>
以下，根据图11以及图12，说明实施方式1的第2变形例。此外，以下，对同一或者相当的部分附加同一符号，不反复重复的说明。
如图11所示，在实施方式1的第2变形例中，至少一个第1树脂部件2由一个第1树脂部件2构成。至少一个导电线3由一个导电线3构成。如图12所示，一个第1树脂部件2的凸部20与一个导电线3的一个凹部31嵌合。凸部20与接合部30的接合部一方端30a以及接合部另一方端30b中的任意端相接。
<关于半导体装置50的制造方法>
接下来，主要使用图13～16，说明实施方式1所涉及的半导体装置50的制造方法。
如图13所示，半导体装置50的制造方法包括：准备半导体元件1的工序S1；形成凸部20的工序S2；以及将凹部31与凸部20嵌合的工序S3。
在准备半导体元件1的工序S1中，准备半导体元件1。如图1所示，半导体元件1与电路基板5接合。
如图14所示，在形成凸部20的工序S2中，通过将至少一个第1树脂部件2涂敷到表面电极10的第2面10t，在至少一个第1树脂部件2中形成凸部20。
如图15所示，将第1树脂部件2通过分配器8涂敷到表面电极10。被分配第1树脂部件2时的表面电极10与分配器喷嘴之间的距离HD在第1树脂部件2的触变指数大于1.1的情况下，相比于第1树脂部件的触变指数为1.1以下的情况更小。
如图14所示，第1树脂部件2以在将凹部31(参照图3)与凸部20嵌合的工序S3中将凸部20配置到与接合部一方端30a以及接合部另一方端30b的至少任意一个相邻的位置的方式被预先涂敷。具体而言，第1树脂部件2以在将凹部31(参照图3)与凸部20嵌合的工序S3中将一方凸部20a配置到与接合部一方端30a相邻的位置的方式被预先涂敷。具体而言，第1树脂部件2以在将凹部31(参照图3)与凸部20嵌合的工序S3中将另一方凸部20b配置到与接合部另一方端30b相邻的位置的方式被预先涂敷。
涂敷的第1树脂部件2被加热。通过第1树脂部件2被加热而包含于第1树脂部件2的溶剂蒸发，所以第1树脂部件2变得硬到在被接合导电线3时保持凸部20的形状的程度。在本实施方式中，将第1树脂部件2变得硬到在被接合导电线3时保持凸部20的形状的程度称为临时硬化。
在形成凸部20的工序S2中，以保持至少一个第1树脂部件2的凸部20的状态，至少一个第1树脂部件2被临时硬化。第1树脂部件2例如通过在热板上在100℃下加热1分钟而临时硬化。如图14所示，临时硬化后的第1树脂部件2能够粘接到导电线3。
如图3所示，在将凹部31与凸部20嵌合的工序S3中，至少一个导电线3的接合部30以与至少一个第1树脂部件2相邻的方式与表面电极10的第2面10t接合。在将凹部31与凸部20嵌合的工序S3中，形成凹部31并且将凹部31与凸部20嵌合。通过导电线3沿着凸部20变形，在导电线3形成凹部31。具体而言，通过导电线3被临时硬化后的第1树脂部件2按压，导电线3凹陷，所以在导电线3形成凹部31。在将第1树脂部件2涂敷到表面电极10的第2面10t之后，导电线3接合到第2面10t，并且凹部31与凸部20嵌合。
另外，在将凹部31与凸部20嵌合的工序S3中，电路基板5与散热器61接合。外壳62与散热器61接合。
在将凹部31与凸部20嵌合的工序S3之后，第1树脂部件2被正式硬化。通过使第1树脂部件2的溶剂充分挥发，第1树脂部件2被正式硬化。另外，在第1树脂部件2包含聚酰亚胺系树脂的情况下，通过在酰亚胺前体中产生闭环反应，第1树脂部件2被正式硬化。在第1树脂部件2被正式硬化时，第1树脂部件2例如在低氧烤炉内在200℃下被加热3小时。
如图16所示，半导体装置50的制造方法也可以在将凹部31与凸部20嵌合的工序S3之后，包括利用密封树脂部件4密封半导体元件1、至少一个第1树脂部件2以及导电线3的工序S4。液状的密封树脂部件4被供给到半导体元件1、至少一个第1树脂部件2以及导电线3之上。供给的密封树脂部件4被硬化。
<关于作用效果>
接下来，说明本实施方式的作用效果。
根据本实施方式所涉及的半导体装置50，如图3所示，至少一个导电线3的凹部31与接合部30相邻，所以与接合部30的端部相接。凹部31与至少一个第1树脂部件2的凸部20嵌合。由此，能够使与凹部31嵌合的第1树脂部件2的凸部20遍布至接合部30的端部。
具体而言，能够以使一方第1树脂部件2a与至少一个导电线3的一方凹部31a以及接合部一方端30a相邻的方式，配置一方第1树脂部件2a。由此，能够使一方第1树脂部件2a遍布至接合部一方端30a。另外，能够以使另一方第1树脂部件2b与至少一个导电线3的另一方凹部31b以及接合部另一方端30b相邻的方式，配置另一方第1树脂部件2b。由此，能够使另一方第1树脂部件2b遍布至接合部另一方端30b。
如图3所示，至少一个凹部31与至少一个第1树脂部件2的凸部20嵌合，所以能够在表面电极10与导电线3之间无间隙地设置第1树脂部件2。由此，能够使第1树脂部件2的形状稳定。因此，即使在功率循环试验中对半导体装置50实施的情况下，也能够在至少一个导电线3与表面电极10之间持续固定第1树脂部件2。由此，能够抑制在接合部30产生裂纹。因此，能够提高半导体装置50的可靠性。
如图3所示，至少一个导电线3的凹部31与第1树脂部件2的凸部20嵌合。第1树脂部件2以维持凸部20的状态，与凹部31嵌合。因此，能够提供具有简易的构造的半导体装置50。
第1树脂部件2的粘度是50Pa·s以上且150Pa·s以下，所以能够在表面电极10之上保持第1树脂部件2。由此，无第1树脂部件2从表面电极10之上流出的可能性。因此，无需设置用于抑制第1树脂部件2从表面电极10之上流出的构造。因此，能够提供具有简易的构造的半导体装置50。
第1树脂部件2包含聚酰亚胺系树脂以及聚酰胺系树脂中的至少任意一个，所以相比于不包含聚酰亚胺系树脂以及聚酰胺系树脂中的任意一个的第1树脂部件2，具有更高的耐热性。由此，能够提供具有高的可靠性的半导体装置50。
如图4所示，至少一个第1树脂部件2的第1方向(Z轴方向)的尺寸H2是设置有接合部30的部分的至少一个导电线3的第1方向(Z轴方向)的尺寸H3的0.2倍以上且小于1倍，至少一个第1树脂部件2的第2方向(X轴方向)的尺寸W2是接合部30的第3方向(Y轴方向)的尺寸的0.5倍以上且10倍以下。由此，能够在至少一个导电线3与表面电极10之间高效地配置至少一个第1树脂部件2。具体而言，能够在导电线3与表面电极10之间配置第1树脂部件2，并且防止从导电线3与表面电极10之间露出。由此，能够减少第1树脂部件2的使用量。另外，通过高效地设置第1树脂部件2，能够利用第1树脂部件2高效地加强导电线3。
在假设通过第1树脂部件2的表面张力在导电线3与表面电极10之间填充第1树脂部件2的情况下，难以使第1树脂部件2的尺寸成为上述尺寸，所以难以高效地设置第1树脂部件2。
第1树脂部件2的触变指数是1.1以上，所以能够使至少一个第1树脂部件2的第1方向(Z轴方向)的尺寸H2成为设置有接合部30的部分的至少一个导电线3的第1方向(Z轴方向)的尺寸H3的0.2倍以上且小于1倍，能够使至少一个第1树脂部件2的第2方向(X轴方向)的尺寸W2成为接合部30的第3方向(Y轴方向)的尺寸的0.5倍以上且10倍以下。由此，能够高效地设置第1树脂部件2。
如图3所示，接合部30仅在接合部一方端30a以及接合部另一方端30b与第1树脂部件2相接。相比于接合部30的全周与第1树脂部件2相接的情况，能够减小第1树脂部件2的使用量。
根据本实施方式的第1变形例，如图10所示，多个导电线3各自的凹部31与凸部20嵌合。因此，对一个第1树脂部件2各自接合有多个导电线3。因此，能够相比于分配多个第1树脂部件2的情况，缩短半导体装置50的制造中的作业时间。
根据本实施方式的第2变形例，如图12所示，至少一个第1树脂部件2也可以由一个第1树脂部件2构成。由此，能够相比于至少一个第1树脂部件2包括多个第1树脂部件2的情况，减少第1树脂部件2的使用量。因此，能够减小半导体装置50的制造成本。
根据本实施方式的半导体装置50的制造方法，如图13所示，半导体装置50的制造方法包括将导电线3的凹部31与第1树脂部件2的凸部20嵌合的工序S3。由此，能够在导电线3与表面电极10之间无间隙地配置第1树脂部件2。
半导体装置50的制造方法包括将导电线3的凹部31与第1树脂部件2的凸部20嵌合的工序S3。由此，第1树脂部件2以维持凸部20的状态，与凹部31嵌合。因此，能够提供具有简易的构造的半导体装置50。
在将第1树脂部件2涂敷到表面电极10的第2面10t之后，将导电线3的凹部31粘接到第1树脂部件2的凸部20，所以能够在导电线3与表面电极10之间无间隙地配置第1树脂部件2。
在形成凸部20的工序S2中，以保持至少一个第1树脂部件2的凸部20的状态，至少一个第1树脂部件2被临时硬化。由此，能够保持凸部20的形状。另外，通过至少一个导电线3被临时硬化的至少一个第1树脂部件2按压，至少一个导电线3凹陷。由此，能够在至少一个导电线3形成凹部31。
在将凹部31与凸部20嵌合的工序S3之后，第1树脂部件2被正式硬化。因此，第1树脂部件2能够充分粘接到导电线3。
如图16所示，在将凹部31与凸部20嵌合的工序S3之后，利用密封树脂部件4密封半导体元件1、至少一个第1树脂部件2以及导电线3。由此，半导体元件1、至少一个第1树脂部件2以及导电线3通过密封树脂部件4被加强，所以能够提高半导体装置50的可靠性。
实施方式2.
实施方式2只要不特别说明，则具有与上述实施方式1相同的结构、制造方法以及作用效果。因此，对与上述实施方式1相同的结构附加同一符号，不反复说明。
使用图17～图19，说明实施方式2所涉及的半导体装置50的结构。如图17所示，在本实施方式中，半导体装置50还包括第2树脂部件7。本实施方式所涉及的半导体装置50在还包括第2树脂部件7的方面，与实施方式1所涉及的半导体装置50不同。
如图18所示，在本实施方式中，至少一个导电线3包括邻接部32和立起部33。邻接部32与接合部30相邻。立起部33从邻接部32向相对表面电极10与本体部11(参照图1)相反的一侧立起。至少一个导电线3在接合部30、邻接部32以及立起部33弯曲。接合部30、邻接部32以及立起部33构成至少一个导电线3的颈部。
第2树脂部件7相对至少一个导电线3在表面电极10的相反侧，覆盖从立起部33经由邻接部32至接合部30。第2树脂部件7覆盖接合部30的至少一部分、邻接部32、以及立起部33的至少一部分。如图19所示，在顶视时，第2树脂部件7与至少一个第1树脂部件2和接合部30的边界重叠。
第2树脂部件7包含聚酰亚胺系树脂以及聚酰胺系树脂中的至少任意一个。第2树脂部件7也可以是具有高的耐热性的树脂。第2树脂部件7的触变指数例如是1.1以上。第2树脂部件7的触变指数例如也可以是2.5以上。
第2树脂部件7也可以包含未图示的填充物。包含于第2树脂部件7的未图示的填充物的材料例如是陶瓷、金属或者橡胶。第2树脂部件7也可以具有比半导体装置50的最高使用温度高的玻璃转移温度。第2树脂部件7的玻璃转移温度例如也可以是150℃以上。
以下，根据图19以及图20，说明实施方式2的变形例。此外，以下，对同一或者相当的部分附加同一符号，不反复重复的说明。
如图20所示，在实施方式2的变形例中，至少一个导电线3包括多个导电线3。第2树脂部件7跨越多个导电线3。在本实施方式中，第2树脂部件7与多个导电线3交叉。
接下来，使用图21，说明实施方式2所涉及的半导体装置50的制造方法。
如图21所示，在本实施方式中，还包括在相对至少一个导电线3与表面电极10相反的一侧，利用第2树脂部件7覆盖从至少一个导电线3的立起部33经由邻接部32直至接合部30的工序S5。
也可以在利用第2树脂部件7覆盖接合部30、邻接部32以及立起部33之后，通过使第2树脂部件7的溶剂挥发，第2树脂部件7被临时硬化。第2树脂部件7例如通过在热板上在100℃下加热1分钟而被临时硬化。
在将凹部31与凸部20嵌合的工序S3之后，第2树脂部件7被正式硬化。通过使第2树脂部件7的溶剂充分挥发，第2树脂部件7被正式硬化。另外，在第2树脂部件7包含聚酰亚胺系树脂的情况下，通过在酰亚胺前体中产生闭环反应，第2树脂部件7被正式硬化。在第2树脂部件7被正式硬化时，第2树脂部件7例如在低氧烤炉内在200℃下被加热3小时。
也可以如图21所示，在利用第2树脂部件7覆盖的工序S5之后，还包括利用密封树脂部件4密封半导体元件1、至少一个第1树脂部件2、第2树脂部件7以及导电线3的工序S4。
接下来，说明本实施方式的作用效果。
根据本实施方式所涉及的半导体装置50，如图18所示，立起部33从邻接部32向相对表面电极10与本体部11相反的一侧立起。在本实施方式中，第2树脂部件7覆盖从立起部33经由邻接部32至接合部30。由此，能够加强接合部30、邻接部32以及立起部33。因此，即使在功率循环试验中对半导体装置50实施的情况下，也能够抑制在接合部30、邻接部32以及立起部33产生裂纹。因此，能够提高半导体装置50的可靠性。另外，能够抑制至少一个导电线3在邻接部32断裂。
第2树脂部件7包含聚酰亚胺系树脂以及聚酰胺系树脂中的至少任意一个，所以相比于不包含聚酰亚胺系树脂以及聚酰胺系树脂中的任意一个的第2树脂部件7，具有更高的耐热性。由此，能够提供具有高的可靠性的半导体装置50。
第2树脂部件7的触变指数是1.1以上，所以能够通过具有充分的厚度的第2树脂部件7覆盖接合部30、邻接部32以及立起部33。第2树脂部件7的厚度例如是10μm以上且100μm以下。由此，能够抑制在接合部30、邻接部32以及立起部33产生裂纹。
根据本实施方式的变形例所涉及的半导体装置50，如图20所示，第2树脂部件7跨越多个导电线3。因此，在半导体装置50的制造工序中，在分配第2树脂部件7时，能够连续地涂敷第2树脂部件7。由此，能够缩短半导体装置50的制造中的作业时间。
根据本实施方式所涉及的半导体装置50的制造方法，也可以如图21所示，在将凹部31与凸部20嵌合的工序S3之后，还包括相对至少一个导电线3在表面电极10的相反侧，利用第2树脂部件7覆盖从至少一个导电线3的立起部33经由邻接部32直至接合部30的工序S5。因此，能够加强邻接部32。
如图21所示，在利用第2树脂部件7覆盖的工序S5之后，还包括利用密封树脂部件4密封半导体元件1、至少一个第1树脂部件2、第2树脂部件7以及导电线3的工序S4。因此，半导体元件1、至少一个第1树脂部件2、第2树脂部件7以及导电线3通过密封树脂部件4被加强，所以能够提高半导体装置50的可靠性。
实施方式3.
本实施方式是将上述实施方式1以及实施方式2所涉及的半导体装置应用于电力变换装置的例子。本公开不限定于特定的电力变换装置，但以下，作为实施方式3，说明将本公开应用于三相的逆变器的情况。
图22是示出应用本实施方式的电力变换装置的电力变换系统的结构的框图。
图22所示的电力变换系统包括电源100、电力变换装置200、负载300。电源100是直流电源，对电力变换装置200供给直流电力。电源100能够由各种电源构成，例如，既能够由直流系统、太阳能电池、蓄电池构成，也可以由与交流系统连接的整流电路、AC/DC转换器构成。另外，电源100也可以由将从直流系统输出的直流电力变换为预定的电力的DC/DC转换器构成。
电力变换装置200是连接于电源100与负载300之间的三相的逆变器，将从电源100供给的直流电力变换为交流电力，对负载300供给交流电力。电力变换装置200如图22所示，具备：主变换电路201，将直流电力变换为交流电力而输出；以及控制电路203，将控制主变换电路201的控制信号输出给主变换电路201。
负载300是通过从电力变换装置200供给的交流电力驱动的三相的电动机。此外，负载300不限于特定的用途，是搭载于各种电气设备的电动机、例如被用作面向混合动力汽车、电动汽车、铁路车辆、电梯、或者空调设备的电动机。
以下，详细说明电力变换装置200。主变换电路201具备开关元件和续流二极管(未图示)，通过开关元件开关，将从电源100供给的直流电力变换为交流电力，供给到负载300。主变换电路201的具体的电路结构有各种例子，但本实施方式的主变换电路201是2电平的三相全桥电路，能够由6个开关元件和与各个开关元件反并联的6个续流二极管构成。主变换电路201的各开关元件以及各续流二极管的至少任意一个是与上述实施方式1以及实施方式2中的任意半导体装置相当的半导体装置202具有的开关元件或者续流二极管。关于6个开关元件，针对每2个开关元件串联连接而构成上下支路，各上下支路构成全桥电路的各相(U相、V相、W相)。而且，各上下支路的输出端子、即主变换电路201的3个输出端子与负载300连接。
另外，主变换电路201具备驱动各开关元件的驱动电路(未图示)，但驱动电路也可以内置于半导体装置202，还可以是与半导体装置202独立地具备驱动电路的结构。驱动电路生成驱动主变换电路201的开关元件的驱动信号，供给到主变换电路201的开关元件的控制电极。具体而言，依照来自后述控制电路203的控制信号，将使开关元件成为导通状态的驱动信号和使开关元件成为截止状态的驱动信号输出给各开关元件的控制电极。在将开关元件维持为导通状态的情况下，驱动信号是开关元件的阈值电压以上的电压信号(导通信号)，在将开关元件维持为截止状态的情况下，驱动信号成为开关元件的阈值电压以下的电压信号(截止信号)。
控制电路203以对负载300供给期望的电力的方式，控制主变换电路201的开关元件。具体而言，根据应供给到负载300的电力，计算主变换电路201的各开关元件应成为导通状态的时间(导通时间)。例如，能够通过根据应输出的电压调制开关元件的导通时间的PWM控制，控制主变换电路201。而且，以在各时间点，向应成为导通状态的开关元件输出导通信号，向应成为截止状态的开关元件输出截止信号的方式，向主变换电路201具备的驱动电路输出控制指令(控制信号)。驱动电路依照该控制信号，向各开关元件的控制电极输出导通信号或者截止信号作为驱动信号。
在本实施方式所涉及的电力变换装置中，作为构成主变换电路201的半导体装置202，应用实施方式1以及实施方式2所涉及的半导体装置，所以能够实现具有高的可靠性并且具有简易的构造的电力变换装置。
在本实施方式中，说明了将本公开应用于2电平的三相逆变器的例子，但本公开不限于此，能够应用于各种电力变换装置。在本实施方式中，设为2电平的电力变换装置，但也可以是3电平、多电平的电力变换装置，在对单相负载供给电力的情况下，也可以将本公开应用于单相的逆变器。另外，在对直流负载等供给电力的情况下，还能够将本公开应用于DC/DC转换器、AC/DC转换器。
另外，应用本公开的电力变换装置不限定于上述负载为电动机的情况，例如，既能够用作放电加工机、激光加工机或者感应加热烹调器、非接触供电系统的电源装置，进而也能够用作太阳能发电系统、蓄电系统等的功率调节器。
应认为本次公开的实施方式在所有方面为例示而非限制性的。本发明的范围并非由上述说明示出而由权利要求书示出，意图包括与权利要求书均等的意义以及范围内的所有变更。

Claims (16)

1.一种半导体装置，具备：
半导体元件，包括本体部和具有与所述本体部接合的第1面以及与所述第1面对置的第2面的表面电极；
至少一个第1树脂部件，配置于所述表面电极的所述第2面；以及
至少一个导电线，包括与所述至少一个第1树脂部件相邻并且与所述第2面接合的接合部，
所述至少一个第1树脂部件包括向相对所述表面电极与所述本体部相反的一侧突出的凸部，
所述至少一个导电线包括与所述接合部相邻并且沿着所述凸部延伸的凹部，
所述凹部与所述凸部嵌合。
2.根据权利要求1所述的半导体装置，其中，
所述至少一个第1树脂部件的粘度是50Pa·s以上且150Pa·s以下。
3.根据权利要求1或者2所述的半导体装置，其中，
在将所述表面电极的所述第2面与所述第1面对置的方向设为第1方向，
将沿着所述第2面从所述接合部朝向所述凹部的方向设为第2方向，
将与所述第1方向以及所述第2方向这两方正交的方向设为第3方向时，
所述至少一个第1树脂部件的所述第1方向的尺寸是设置有所述接合部的部分的所述至少一个导电线的所述第1方向的尺寸的0.2倍以上且小于1倍，
所述至少一个第1树脂部件的所述第2方向的尺寸是所述接合部的所述第3方向的尺寸的0.5倍以上且10倍以下。
4.根据权利要求1～3中的任意一项所述的半导体装置，其中，
所述至少一个第1树脂部件包含聚酰亚胺系树脂以及聚酰胺系树脂中的至少任意一个。
5.根据权利要求1～4中的任意一项所述的半导体装置，其中，
所述至少一个第1树脂部件的触变指数是1.1以上。
6.根据权利要求1～5中的任意一项所述的半导体装置，其中，
还具备第2树脂部件，
所述至少一个导电线包括与所述接合部相邻的邻接部和从所述邻接部向相对所述表面电极与所述本体部相反的一侧立起的立起部，
所述第2树脂部件在相对所述至少一个导电线与所述表面电极相反的一侧，覆盖从所述立起部经由所述邻接部至所述接合部。
7.根据权利要求6所述的半导体装置，其中，
所述第2树脂部件包含聚酰亚胺系树脂以及聚酰胺系树脂中的至少任意一个。
8.根据权利要求6或者7所述的半导体装置，其中，
所述第2树脂部件的触变指数是1.1以上。
9.根据权利要求1～8中的任意一项所述的半导体装置，其中，
所述至少一个导电线包括多个导电线，
所述多个导电线各自的所述凹部与所述凸部嵌合。
10.根据权利要求6～8中的任意一项所述的半导体装置，其中，
所述至少一个导电线包括多个导电线，
所述第2树脂部件跨越所述多个导电线。
11.一种电力变换装置，具备：
主变换电路，具有权利要求1～10中的任意一项所述的所述半导体装置，该主变换电路将被输入的电力变换而输出；以及
控制电路，将控制所述主变换电路的控制信号输出给所述主变换电路。
12.一种半导体装置的制造方法，具备：
准备半导体元件的工序，该半导体元件包括本体部和具有与所述本体部接合的第1面以及与所述第1面对置的第2面的表面电极；
通过将至少一个第1树脂部件涂敷到所述表面电极的所述第2面，在所述至少一个第1树脂部件形成向相对所述表面电极而言所述本体部的相反侧突出的凸部的工序；以及
以与所述至少一个第1树脂部件相邻的方式对所述表面电极的所述第2面接合至少一个导电线的接合部，且形成与所述接合部相邻的沿着所述凸部延伸的凹部，并且将所述凹部与所述凸部嵌合的工序。
13.根据权利要求12所述的半导体装置的制造方法，其中，
在形成所述凸部的工序中，以保持所述至少一个第1树脂部件的所述凸部的状态，所述至少一个第1树脂部件被临时硬化。
14.根据权利要求12或者13所述的半导体装置的制造方法，其中，
在将所述凹部与所述凸部嵌合的工序之后，还具备利用密封树脂部件密封所述半导体元件、所述至少一个第1树脂部件以及所述至少一个导电线的工序。
15.根据权利要求12或者13所述的半导体装置的制造方法，其中，
所述至少一个导电线包括与所述接合部相邻的邻接部和从所述邻接部向相对所述表面电极与所述本体部相反的一侧立起的立起部，
所述半导体装置的制造方法还具备在相对所述至少一个导电线与所述表面电极相反的一侧，利用第2树脂部件覆盖从所述至少一个导电线的所述立起部经由所述邻接部直至所述接合部的工序。
16.根据权利要求15所述的半导体装置的制造方法，其中，
在利用所述第2树脂部件覆盖的工序之后，还具备利用密封树脂部件密封所述半导体元件、所述至少一个第1树脂部件、所述第2树脂部件以及所述至少一个导电线的工序。
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