CN113811990A - 半导体装置、电力变换装置以及半导体装置的制造方法 - Google Patents

半导体装置、电力变换装置以及半导体装置的制造方法 Download PDF

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CN113811990A
CN113811990A CN201980096263.8A CN201980096263A CN113811990A CN 113811990 A CN113811990 A CN 113811990A CN 201980096263 A CN201980096263 A CN 201980096263A CN 113811990 A CN113811990 A CN 113811990A
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circuit
semiconductor device
bonding
wiring member
semiconductor element
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田中阳
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

半导体装置(50)具备第1电路(1)、第2电路(2)、布线构件(3)和接合件(4)。布线构件(3)连接到第1电路(1)和第2电路(2)中的任意一方。接合件(4)连接到第1电路(1)和第2电路(2)中的任意另一方。布线构件(3)包含第1端(3A)、第2端(3B)以及顶点(3C)。第1端(3A)和第2端(3B)连接到第1电路(1)和第2电路(2)中的任意一方。顶点(3C)位于第1端(3A)和第2端(3B)之间。顶点(3C)经由接合件(4)连接到第1电路(1)和第2电路(2)中的任意另一方。

Description

半导体装置、电力变换装置以及半导体装置的制造方法
技术领域
本发明涉及半导体装置、电力变换装置以及半导体装置的制造方法。
背景技术
以往，在使用电力用途的功率半导体元件的半导体装置中，以半导体装置的小型化为目的，要求功率半导体元件的高输出密度化(高电流密度化)。因此，对功率半导体元件施加大电流，因此在功率半导体元件的电路中使用板状的金属构件。
例如，在日本特开2015-138824号公报(专利文献1)中，记载有功率半导体元件与由板状的金属构件构成的电极通过键合导线连接的半导体装置。键合导线具有在2个点连接到功率半导体元件的环形状，并在环形状的顶点处接合到电极。
现有技术文献
专利文献
专利文献1：日本特开2015-138824号公报
发明内容
发明要解决的课题
在上述公报中所记载的半导体装置中，键合导线在环形状的顶点处接合到电极。因此，键合导线的顶点与电极的接合部中的接触面积小。因此，对于在对接合部反复地给予热的或机械性的疲劳时的接合部中的裂纹的进展的容许量小。因此，有接合部的耐热性低的课题。
本发明是鉴于上述文献而做出的，其目的是提供能够提高接合部的耐热性的半导体装置、具备该半导体装置的电力变换装置以及该半导体装置的制造方法。
用于解决课题的手段
本发明的半导体装置具备第1电路、第2电路、布线构件和接合件。布线构件连接到第1电路和第2电路中的任何一方。接合件连接到第1电路和第2电路中的任何另一方。布线构件包含第1端、第2端和顶点。第1端和第2端连接到第1电路和第2电路中的任何一方。顶点位于第1端和第2端之间。顶点经由接合件连接到第1电路和第2电路中的任何另一方。
发明效果
根据本发明的半导体装置，布线构件的顶点经由接合件连接到第1电路和第2电路中的任何另一方，因此布线构件的顶点与接合件的接合部的接触面积大。因此，对于在对接合部反复地给予热的或机械性的疲劳时的接合部中的裂纹的进展的容许量大。因此，能够提高接合部的耐热性。
附图说明
图1是概要地示出本发明的实施方式1的半导体装置的结构的剖面图。
图2是概要地示出本发明的实施方式1的半导体装置的结构的平面图。
图3是概要地示出本发明的实施方式1的半导体装置的结构的图1的III部分的放大立体图。
图4是图1的IV部分的放大图。
图5是概要地示出本发明的实施方式1的半导体装置的变形例的结构的与图1的III部分对应的放大立体图。
图6是示出本发明的实施方式1的半导体装置的制造方法的流程图。
图7是概要地示出本发明的实施方式2的半导体装置的结构的剖面图。
图8是概要地示出本发明的实施方式2的半导体装置的结构的图7的VIII部分的放大立体图。
图9是图7的IX部分的放大图。
图10是概要地示出本发明的实施方式2的半导体装置的变形例的结构的与图7的VIII部分对应的放大立体图。
图11是概要地示出本发明的实施方式3的半导体装置的结构的剖面图。
图12是示出本发明的实施方式4的电力变换系统的结构的框图。
(附图标记说明)
1：第1电路；2：第2电路；3：布线构件；3A：第1端；3B：第2端；3C：顶点；4：接合件；5：合金层；6：半导体元件；7：密封树脂；8：冷却器；50：半导体装置；61：焊盘；100：电源；200：电力变换装置；201：主变换电路；202：半导体模块；203：控制电路；300：负载。
具体实施方式
以下基于附图来说明本发明的实施方式。另外，以下对同一或相当的部分赋以同一符号，并且不重复进行重复的说明。
实施方式1。
参照图1～图3来说明本发明的实施方式1的半导体装置50的结构。图1是概要地示出实施方式1的半导体装置50的结构的剖面图。
图2是概要地示出实施方式1的半导体装置50的结构的平面图。图3是概要地示出实施方式1的半导体装置50的结构的图1的III部分的放大立体图。然而，为了说明的方便，在图3中未图示密封树脂7。如图1和图2所示，半导体装置50主要具备第1电路1、第2电路2、布线构件3、接合件4、合金层5、半导体元件6和密封树脂7。半导体装置50是用于电力的功率半导体装置。半导体元件6是用于电力的功率半导体元件。在图1和图2中，在半导体装置50中具备1个具有2个功率半导体元件的功率模块，但是在半导体装置50中也可以具备多个功率模块。
第1电路1包含电路图案11、绝缘层12和金属层13。第1电路1与半导体元件6电连接。
在第1电路1的电路图案11和金属层13中，例如使用铜(Cu)。然而，在电路图案11和金属层13中使用的材料不限定于此。在电路图案11和金属层13中使用的材料优选为具有高导电性的材料。电路图案11在图1和图2中被一体地示出，但一般是排列有电分离的矩形的形状。
第1电路1的绝缘层12例如是陶瓷基板。作为陶瓷基板的材料，例如使用氧化铝(Aluminum Oxide)、氮化铝(Aluminum Nitride)、氮化硅(Silicon Nitride)。然而，陶瓷基板的材料不限于这些。作为绝缘层12，不仅仅是陶瓷基板，例如还能够使用填充了陶瓷填料的有机材料。作为这样的有机材料，使用环氧树脂、聚酰亚胺树脂或者氰酸酯系树脂等。另外，作为陶瓷填料，使用氧化铝、氮化铝或者氮化硼等。
第1电路1例如是印刷电路基板。第1电路1的形状也可以根据半导体装置50的形状确定。在绝缘层12的两面，设置有电路图案11以及金属层13。在电路图案11以及金属层13中所使用的材料优选为能够通过直接接合法或活性金属接合法与绝缘层12接合以便与绝缘层12牢固地接合即可。另外，在此，直接接合法是指将电路图案11以及金属层13通过直接反应接合到绝缘层12的方法。另外，活性金属接合法是指将电路图案11以及金属层13通过添加了钛(Ti)以及锆(Zr)等活性金属的钎剂接合到绝缘层12的方法。
第2电路2与布线构件3电连接。第2电路2例如是布线基板。具体地，第2电路2例如是印刷电路基板。在第2电路2中安装有未图示的布线图案以及电子零件等。从电气特性以及机械特性的观点，第2电路2的材料也可以是铝(Al)、铜(Cu)、镍(Ni)、金(Au)或者以这些中的任意材料为主要成分的合金。在图1中，第2电路2的数目是1个，但是第2电路2的数目不限于此。第2电路2是根据电路图案11的配置而连接可电连接的部分的形状。
布线构件3连接到第1电路1和第2电路2的任意一方。在本实施方式中，布线构件3连接到第2电路2。布线构件3包含第1端3A、第2端3B和顶点3C。第1端3A以及第2端3B连接到第2电路2。具体地，第1端3A以及第2端3B直接接合到第2电路2。顶点3C位于第1端3A和第2端3B之间。也就是说，顶点3C在布线构件3中配置在第1端3A和第2端3B之间。在本实施方式中，顶点3C经由接合件4连接到第1电路1。另外，顶点3C经由接合件4连接到半导体元件6。也就是说，顶点3C经由接合件4和半导体元件6连接到第1电路1。
如图1和图3所示，布线构件3具有弹性，构成为能够柔软地弯曲的形状。因此，布线构件3具有所谓的挠性。布线构件3形成两端接合的环。布线构件3构成为大致U字状。布线构件3例如是导线或者板状构件。在本实施方式中，布线构件3是导线。也就是说，布线构件3的形状是圆柱状。布线构件3的第1端3A以及第2端3B接合到第2电路2。作为接合布线构件3和第2电路2的方法，例如使用超声波接合。作为布线构件3，使用金属材料。布线构件3的材料例如是铝(Al)、铜(Cu)、银(Ag)或者以这些为主体的合金等。
接合件4连接到第1电路1以及第2电路2的任意一方。在本实施方式中，接合件4连接到第1电路1。具体地，接合件4配置在半导体元件6的焊盘61之上。另外，接合件4连接到半导体元件6。接合件4设置在第1电路1的电路图案11以及半导体元件6的焊盘61与布线构件3之间。接合件4与布线构件3的顶点3C接合。接合件4包含接合面4T和背面4B。接合面4T与布线构件3的顶点3C接合。背面4B配置在相对于接合件4的中央与接合面4T相反的一侧。接合件4接合到第1电路1的电路图案11以及半导体元件6的焊盘61中的任意方。也就是说，背面4B接合到第1电路1的电路图案11以及半导体元件6中的任意方。也就是说，在图1中最左侧配置的接合件4中，背面4B接合到第1电路1的电路图案11。另外，在图1中最左侧配置的接合件4的右侧所配置的3个接合件4的各个中，背面4B接合到半导体元件6。另外，接合件4与第2电路2不接触。另外，在图1中，接合件4设置在第1电路1的电路图案11之上以及半导体元件6的焊盘61之上，但是配置接合件4的部位也可以是任意一方。
接合件4的主要构成要素是与布线构件3同样的金属元素以及降熔点元素。例如，作为接合件4的主要构成要素，使用铝(Al)-锡(Zn)、铜(Cu)-锡(Sn)、银(Ag)-锡(Sn)等组合。也就是说，如果布线构件3的主要金属元素是铝(Al)，则接合件4包含铝(Al)以及作为降熔点元素的锌(Zn)。另外，如果布线构件3的主要金属元素是铜(Cu)，则接合件4包含铜(Cu)以及作为降熔点元素的锡(Sn)。另外，如果布线构件3的主要金属元素是银(Ag)，则接合件4包含银(Ag)以及作为降熔点元素的锡(Sn)。另外，布线构件3以及接合件4的构成要素不限于上述组合。
合金层5在布线构件3和接合件4之间形成。合金层5配置在布线构件3的顶点3C和接合件4的接合面4T之间。合金层5是将顶点3C和接合件4接合的接合部。顶点3C与接合件4形成合金层5。顶点3C和接合面4T经由合金层5接合。合金层5的主要构成要素是与布线构件3同样的金属元素以及降熔点元素。合金层5的主要构成要素在降熔点元素的熔点不熔化。
半导体元件6例如是包括硅(Si)或者炭化硅(SiC)等的绝缘栅型双极晶体管(IGBT：Insulated Gate Bipolar Transistor)、续流二极管(FWD：Free Wheel Diode)或者金属氧化物半导体场效应晶体管(MOSFET：Metal Oxide Semiconductor Field EffectTransistor)等。然而，半导体元件6的种类不限于这些。在图1中，半导体元件6的数目是2个，但是半导体元件6的数目不限于此。
半导体元件6包含焊盘61和未图示的背面电极。焊盘61设置在半导体元件6的表面。未图示的背面电极设置在半导体元件6的背面。焊盘61配置在相对于半导体元件6的中央与未图示的背面电极相反的一侧。焊盘61接合到接合件4。
焊盘61例如包含控制信号焊盘、主电极焊盘等，但是焊盘61的种类不限于这些。另外，作为焊盘61，也可以设置控制信号焊盘以及主电极焊盘中的任意一方。作为焊盘61，从电气特性以及机械特性的观点，使用铝(Al)、铜(Cu)、银(Ag)、镍(Ni)、金(Au)或者以这些之中的任意材料为主要成分的合金。
元件接合件62配置在半导体元件6的未图示的背面电极和第1电路1的电路图案11之间。元件接合件62接合到半导体元件6的未图示的背面电极和第1电路1的电路图案11这两方。由此，半导体元件6的未图示的背面电极和第1电路1的电路图案11电连接。元件接合件62配置在相对于半导体元件6与接合件4相反的一侧。作为元件接合件62，例如使用含有铅(Pb)以及锡(Sn)的高温用焊料。然而，用于元件接合件62的材料不限定于这些。作为元件接合件62，例如还能够使用银(Ag)纳米粒子膏或者包含银(Ag)粒子以及环氧树脂等的导电性粘接剂。
密封树脂7密封第1电路1、第2电路2、布线构件3、接合件4、合金层5和半导体元件6。也就是说，密封树脂7覆盖第1电路1、第2电路2、布线构件3、接合件4、合金层5以及半导体元件6。另外，第1电路1的金属层13的与接合到绝缘层12的面相反的一侧的面从密封树脂7露出。另外，第2电路2的与接合到布线构件3的面相反的一侧的面从密封树脂7露出。
密封树脂7具有绝缘性。作为密封树脂7，例如使用热硬化性树脂。然而，用于密封树脂7的材料不限于此。例如，作为密封树脂7，能够使用氨基甲酸乙酯树脂、环氧树脂、聚酰亚胺树脂、聚酰胺树脂、聚酰胺－酰亚胺树脂、丙烯酸树脂、橡胶材料等。另外，密封树脂7也可以通过多个密封树脂7形成。例如，密封树脂7也可以通过在凝胶状的硅树脂之上重叠环氧树脂来形成。
在半导体装置50中，第1电路1和第2电路2经由布线构件3、接合件4、合金层5、半导体元件6和元件接合件62电连接。第2电路2和布线构件3通过直接接合而接合。布线构件3和接合件4经由合金层5通过液相扩散接合而接合。经由合金层5，布线构件3和接合件4电连接。接合件4和半导体元件6通过半导体元件6的焊盘61接合。半导体元件6和第1电路1经由元件接合件62电连接。另外，第1电路1和第2电路2不经由半导体元件6以及元件接合件62，而是经由布线构件3、接合件4以及合金层5电连接。
另外，半导体装置50的结构不限定于上述的结构。半导体装置50例如可以构成为设置框体以包围第1电路1、第2电路2、布线构件3、接合件4以及半导体元件的外周，并在框体的内部填充密封树脂7。
参照图4详细地说明合金层5。图4是概要地示出实施方式1的合金层5的图1的IV部分的放大图。合金层5通过布线构件3和接合件4的合金来形成。布线构件3以及接合件4通过在接合件4中包含的降熔点元素的作用，在比构成布线构件3以及接合件4的主要金属元素的熔点更低的温度下熔化。接合件4一边向布线构件3润湿展开，一边在与布线构件3之间形成合金层5并凝固(等温凝固)。合金层5通过上述的所谓的液相扩散接合形成。布线构件3和接合件4间的界面经由合金层5牢固地接合。由此，在布线构件3的顶点3C和接合件4之间设置包括合金层5的接合部。该接合部通过顶点3C进入到接合件4中来形成，因此沿着顶点3C的底部以及侧部设置。因此，相比于接合部沿着顶点3C的底部设置的情况，接合部更大。顶点3C在与接合件4之间具有大的接触面积。另外，经由接合件4以及合金层5，半导体元件6和第2电路2电连接。
另外，在图3中，布线构件3是导线，但是布线构件3不限定于此。图5是概要地示出实施方式1的半导体装置的变形例的结构的与图1的III部分对应的放大立体图。在实施方式1的半导体装置50的变形例中，布线构件3是板状构件。也就是说，布线构件3的形状是板状。具体地，布线构件3构成为弯曲的长方形的板状。在布线构件3中，从第1端3A朝向第2端3B的方向为长度方向，与长度方向正交的方向为宽度方向。
接下来参照图6来说明本实施方式的半导体装置50的制造方法。图6是示出本实施方式的半导体装置50的制造方法的流程图。本实施方式中的半导体装置50的制造方法具备准备工序S11、连接工序S12、液相扩散接合工序S13和密封工序S14。
在准备工序S11中，准备第1电路1、第2电路2、布线构件3和半导体元件6。
在连接工序S12中，将布线构件3的第1端3A以及第2端3B连接到第1电路1和第2电路2中的任意一方。在本实施方式中，将布线构件3的第1端3A以及第2端3B连接到第2电路2。布线构件3的第1端3A以及第2端3B直接接合到第2电路2。半导体元件6经由元件接合件62接合到第1电路1的电路图案11。
在液相扩散接合工序S13中，将布线构件3的顶点3C经由接合件4连接到第1电路1和第2电路2中的任意另一方。在本实施方式中，布线构件3的顶点3C经由接合件4连接到第1电路1。布线构件3的顶点3C和接合件4通过液相扩散接合而接合。通过液相扩散接合，在顶点3C和接合件4之间形成合金层5。另外，接合件4配置在半导体元件6的焊盘61上和第1电路的电路图案11上的至少任一个。布线构件3的顶点3C和接合件4通过液相扩散接合而接合。
在密封工序S14中，通过密封树脂7密封第1电路1、第2电路2、布线构件3、接合件4、合金层5、半导体元件6和元件接合件62。
接下来，说明本实施方式的作用效果。
根据本实施方式的半导体装置50，布线构件3的顶点3C经由接合件4连接到第2电路2。布线构件3的顶点3C进入到接合件4中，因此布线构件3的顶点3C和接合件4的接合部的接触面积大。因此，对于在接合部中反复地负担热的或机械性的疲劳时的接合部中的裂纹的进展的容许量大。因此，能够提高接合部的耐热性。
在本实施方式的半导体装置50中，布线构件3的顶点3C与接合件4形成合金层5。因此，能够在合金层5即接合部中形成牢固的接合界面。因此，能够提高接合部的耐热性。
另外，布线构件3具有挠性，因此能够变形。因此，即使在接合件4或者半导体元件6的高度上产生偏差的情况下，布线构件3也能够通过布线构件3变形而接合到接合件4或者半导体元件6。也就是说，即使在接合件4或者半导体元件6的高度不均匀的情况下，布线构件3也能够通过布线构件3追随接合件4或者半导体元件6的高度变形而接合到接合件4或者半导体元件6。
根据本实施方式的半导体装置50，布线构件3是导线。因此，容易使布线构件3进入到接合件4中。
根据本实施方式的半导体装置50，布线构件3的顶点3C经由在半导体元件6的焊盘61之上配置的接合件4而连接到第1电路1。因此，能够提高布线构件3的顶点3C和在半导体元件6的焊盘61之上配置的接合件4的接合部的耐热性。
另外，布线构件3的第1端3A以及第2端3B通过不经由接合件4的金属彼此的直接接合而接合到第2电路2。因此，能够减少接合件4的提供量，因此能够实现制造成本的降低。
根据本实施方式的半导体装置50，半导体元件6是功率半导体元件。因此，半导体装置50能够作为功率半导体装置动作。
根据本实施方式的半导体装置50，密封树脂7覆盖第1电路1、第2电路2、布线构件3、接合件4以及半导体元件6。因此，通过密封树脂7，能够提高绝缘可靠性。
根据本实施方式的半导体装置50的制造方法，布线构件3的顶点3C和接合件4通过液相扩散接而接合。因此，在接合部中形成牢固的接合界面，因此能够提高接合部的耐热性。在布线构件3预先接合到第2电路2的状态下，布线构件3的顶点3C和接合件4通过液相扩散接合而接合，因此抑制组装时的位置偏离。由此，布线构件3和接合件4的对位变得简单。
在本实施方式的半导体装置50的制造方法中，接合件4配置在半导体元件6的焊盘61之上。因此，能够提高布线构件3的顶点3C和在半导体元件6的焊盘61之上配置的接合件4的接合部的耐热性。
根据本实施方式的半导体装置50的变形例，布线构件3是板状构件。在布线构件3是板状构件的情况下，布线构件3的接合部成为平面。另一方面，在布线构件3是导线的情况下，布线构件3的接合部成为曲面。因此，通过布线构件3是板状构件，相比于导线，接合部的接触面积变大。另外，通过布线构件3是板状，布线的布置的自由度提高。另外，通过布线构件3是板状，电感降低。
另外，在布线构件3是导线的情况下，在半导体装置50的电流密度变更时，需要变更布线构件3的根数。另一方面，在布线构件3的形状是板状的情况下，即使半导体装置50的电流密度变更，也能够不变更布线构件3的根数，而通过变更板的宽度或者厚度来应对。
实施方式2。
关于实施方式2，只要未特别说明，就具有与上述的实施方式1同样的结构、制造方法以及作用效果。因此，对于与上述的实施方式1同样的结构附以同样的符号，且不重复说明。
参照图7以及图8说明实施方式2的半导体装置50的结构。图7是概要地示出实施方式2的半导体装置50的结构的剖面图。图8是概要地示出实施方式2的半导体装置50的结构的图7的VIII部分的放大立体图。然而，为了说明的方便，在图8中未图示密封树脂7。
本实施方式的布线构件3的第1端3A以及第2端3B连接到第1电路1的电路图案11或者半导体元件6的焊盘61。具体地，第1端3A以及第2端3B直接接合到第1电路1的电路图案11。另外，第1端3A以及第2端3B直接接合到半导体元件6的焊盘61。在图7中，布线构件3的第1端3A以及第2端3B连接到电路图案11或者1个半导体元件6的焊盘61，但是布线构件3的连接部位不限于这些。关于布线构件3的第1端3A以及第2端3B，例如也可以一方连接到电路图案11，而另一方连接到焊盘61。顶点3C经由接合件4连接到第2电路2。
在本实施方式中，接合件4配置在第2电路2之上。也就是说，接合件4接合到第2电路2。在本实施方式中，接合面4T也是接合件4的与顶点3C接合的面。另一方而，在本实施方式中，背面4B与实施方式1不同，是接合件4的与第2电路2接合的面。另外，本实施方式的接合件4与半导体元件6和第1电路中的任意一个都不接触。
在本实施方式的半导体装置50中，第1电路1和第2电路2经由布线构件3、接合件4、合金层5、半导体元件6和元件接合件62而电连接。第2电路2和布线构件3经由接合件4和合金层5而接合。布线构件3和接合件4经由合金层5通过液相扩散接合而接合。布线构件3和半导体元件6的焊盘61通过直接接合而接合。半导体元件6和第1电路1经由元件接合件62而电连接。另外，第1电路和第2电路2不经由半导体元件6和元件接合件62，而是经由布线构件3、接合件4和合金层5而电连接。
参照图9详细地说明本实施方式的合金层5。图9是概要地示出实施方式2的合金层5的图7的IX部分的放大图。在布线构件3和接合件4之间形成有合金层5。通过合金层5，布线构件3和接合件4电连接。
另外，在图8中，布线构件3的形状是导线，但是布线构件3的形状不限定于此。图10是概要地示出实施方式2的半导体装置的变形例的结构的与图7的VIII部分对应的放大立体图。在实施方式2的半导体装置50的变形例中，布线构件3的形状是板状。
接下来，说明本实施方式的半导体装置50的制造方法。
在本实施方式的连接工序S12中，布线构件3的第1端3A以及第2端3B连接到第1电路1。布线构件3的第1端3A以及第2端3B直接接合到第1电路1。另外，布线构件3的第1端3A以及第2端3B连接到半导体元件6的焊盘61。布线构件3的第1端3A以及第2端3B直接接合到半导体元件6的焊盘61。
在液相扩散接合工序S13中，接合件4配置在第2电路2之上。布线构件3的顶点3C和接合件4通过液相扩散接合而接合。
接下来，说明本实施方式的作用效果。
根据本实施方式的半导体装置50，布线构件3的顶点3C经由在第2电路2之上配置的接合件4连接到第2电路2。因此，能够提高布线构件3的顶点3C和在第2电路2之上配置的接合件4的接合部的耐热性。
另外，布线构件3的第1端3A以及第2端3B通过不经由接合件4的金属彼此的直接接合而接合到半导体元件6的焊盘61。因此，能够减少接合件4的提供量，因此能够实现制造成本的降低。
在本实施方式的半导体装置50的制造方法中，接合件4配置在第2电路2之上。因此，能够提高布线构件3的顶点3C和在第2电路2之上配置的接合件4的接合部的耐热性。
根据本实施方式的半导体装置50的制造方法，在布线构件3预先接合到第1电路1或者半导体元件6的焊盘61的状态下，布线构件3的顶点3C和接合件4通过液相扩散接合而接合，因此抑制组装时的位置偏离。由此，布线构件3和接合件4的对位变得简单。
进一步地，在本实施方式中，接合件4只配置在第2电路2中。另一方面，在实施方式1中，接合件4配置在第1电路1以及半导体元件6中。因此，本实施方式的制造工序相比于实施方式1的制造工序变得简单。另外，通过将第2电路2的形状设为例如平板，能够更简易地进行接合件4的配置。因此，本实施方式的制造工序相比于实施方式1的制造工序变得更简单。
实施方式3。
关于实施方式3只要未特别说明，就具有与上述的实施方式1同样的结构、制造方法以及作用效果。因此，对于与上述的实施方式1同样的结构附以同样的符号，且不重复说明。
参照图11说明本实施方式的半导体装置50的结构。图11是概要地示出本实施方式的半导体装置50的结构的剖面图。本实施方式的半导体装置50在实施方式1的结构的基础上还具备冷却器8这点与实施方式1的半导体装置50不同。
冷却器8将在半导体装置50的动作中发生的热向外部散热。因此，冷却器8优选为由热传导性优良的材料构成。作为冷却器8的材料，例如使用铝(Al)、铜(Cu)以及以这些中的任意材料为主要成分的合金，或者炭化硅(SiC)和铝(Al)的复合材料(Al-SiC)。然而，用于冷却器8的材料不限定于这些。
冷却器8连接到第1电路1。冷却器8配置在相对于第1电路1与半导体元件6的相反的一侧。具体地，冷却器8经由金属接合层81连接到第1电路1的金属层13。金属接合层81设置在第1电路1的金属层13和冷却器8之间。作为金属接合层81的材料，例如使用含有铅(Pb)和锡(Sn)的高温用焊料等。然而，用于金属接合层81的材料不限于这些。作为金属接合层81的材料，例如还能够使用银(Ag)纳米粒子膏或者包含银(Ag)粒子以及环氧树脂的导电性粘接剂。
在图11中，在冷却器8中，设置有用于促进未图示的制冷剂和冷却器8的热交换的流路。然而，冷却器8的结构不限定于此。
接下来，说明本实施方式的作用效果。
根据本实施方式的半导体装置50，冷却器8连接到第1电路1，因此能够提高半导体装置50的冷却性能。由此获得高散热性。
另外，半导体装置50的布线构件3和接合件4的接合部通过合金层5形成，因此耐热性高。因此，将金属接合层81接合到半导体装置50的温度也能够变高。
实施方式4。
在本实施方式中将上述的实施方式1～3的半导体装置应用于电力变换装置。本发明不限定于电力变换装置，而以下作为实施方式4说明在三相逆变器中应用本发明的情况。
图12是示出应用本实施方式的电力变换装置的电力变换系统的结构的框图。
图12所示的电力变换系统包括电源100、电力变换装置200、负载300。电源100是直流电源，向电力变换装置200提供直流电力。电源100能够以各种各样的方式构成，例如能够包括直流系统、太阳能电池、蓄电池，也可以包括连接到交流系统的整流电路、AC/DC转换器。另外，电源100也可以包括将从直流系统输出的直流电力变换成预定电力的DC/DC转换器。
电力变换装置200是在电源100和负载300之间连接的三相逆变器，将从电源100提供的直流电力变换成交流电力，向负载300提供交流电力。电力变换装置200如图12所示具备将直流电力变换成交流电力并输出的主变换电路201以及将控制主变换电路201的控制信号输出到主变换电路201的控制电路203。
负载300是通过从电力变换装置200提供的交流电力驱动的三相电动机。另外，负载300不限于特定用途，是在各种电气设备中装配的电动机，例如用作面向混合动力汽车、电动汽车、铁道车辆、电梯或空调设备的电动机。
以下，说明电力变换装置200的细节。主变换电路201具备开关元件和续流二极管(未图示)，通过开关元件进行开关，将从电源100提供的直流电力变换成交流电力，提供给负载300。主变换电路201的具体的电路结构是各种各样的，而本实施方式的主变换电路201可以是2电平的三相全桥电路，并包括6个开关元件以及与各个开关元件反并联的6个续流二极管。主变换电路201的各开关元件、各续流二极管包括与上述的实施方式1至实施方式4中的任意实施方式相当的半导体模块202。6个开关元件构成每2个开关元件串联连接的上下臂，各上下臂构成全桥电路的各相(U相、V相、W相)。然后，各上下臂的输出端子即主变换电路201的3个输出端子连接到负载300。
另外，主变换电路201具备驱动各开关元件的驱动电路(未图示)，但是驱动电路也可以内置于半导体模块202中，也可以是与半导体模块202独立地具备驱动电路的结构。驱动电路生成驱动主变换电路201的开关元件的驱动信号，并提供到向主变换电路201的开关元件的控制电极。具体地，根据来自后述的控制电路203的控制信号，将使开关元件成为接通状态的驱动信号和使开关元件成为断开状态的驱动信号向各开关元件的控制电极输出。在将开关元件维持在接通状态的情况下，驱动信号是开关元件的阈值电压以上的电压信号(接通信号)，在将开关元件维持在断开状态的情况下，驱动信号成为开关元件的阈值电压以下的电压信号(断开信号)。
控制电路203控制主变换电路201的开关元件，以向负载300提供期望的电力。具体地，基于应向负载300提供的电力，计算出主变换电路201的各开关元件应成为接通状态的时间(接通时间)。例如，能够通过根据应输出的电压来调制开关元件的接通时间的PWM控制，控制主变换电路201。然后，对主变换电路201具备的驱动电路输出控制指令(控制信号)，以在各时间点对于应成为接通状态的开关元件输出接通信号并对于应成为断开状态的开关元件输出断开信号。驱动电路根据该控制信号，对各开关元件的控制电极，将接通信号或者断开信号作为驱动信号输出。
在本实施方式的电力变换装置中，作为主变换电路201的开关元件和续流二极管，应用实施方式1至实施方式3中的任意一个的半导体模块，因此能够实现电力变换装置的可靠性提高。
在本实施方式中，说明了在2电平的三相逆变器中应用本发明的例子，但是本发明不限于此，而是能够应用于各种各样的电力变换装置。在本实施方式中，设为2电平的电力变换装置，但是也可以是3电平、多电平的电力变换装置，也可以在向单相负载提供电力的情况下在单相的逆变器中应用本发明。另外，在向直流负载等提供电力的情况下，也能够在DC/DC转换器、AC/DC转换器中应用本发明。
另外，应用本发明的电力变换装置不限定于上述的负载是电动机的情况，例如也能够用作放电加工机、激光加工机或者感应加热烹调器、非接触式供电系统的电源装置，进一步地也能够用作太阳能发电系统、蓄电系统等的功率调节器。
另外，能够适当地组合上述的各实施方式。
关于本次公开的实施方式，应认为在所有的方面均为示例，而非限制。本发明的范围不是通过上述的说明而是通过权利要求书示出，并意图包含在与权利要求书相当的意思和范围内的所有的变更。

Claims (13)

1.一种半导体装置，具备：
第1电路；
第2电路；
布线构件，连接到所述第1电路和所述第2电路中的任意一方；以及
接合件，连接到所述第1电路和所述第2电路中的任意另一方，
所述布线构件包含：连接到所述第1电路和所述第2电路中的任一方的第1端和第2端；以及位于所述第1端和所述第2端之间的顶点，
所述顶点经由所述接合件连接到所述第1电路和所述第2电路中的任意另一方。
2.根据权利要求1所述的半导体装置，其中，
所述顶点与所述接合件形成合金层，
所述合金层的主要构成要素是与所述布线构件同样的金属元素以及降熔点元素。
3.根据权利要求1或2所述的半导体装置，其中，
所述布线构件是导线。
4.根据权利要求1或2所述的半导体装置，其中，
所述布线构件是板状构件。
5.根据权利要求1至4中的任一项所述的半导体装置，其中，
所述半导体装置还具备半导体元件，
所述半导体元件包含焊盘，
所述接合件配置在所述半导体元件的所述焊盘之上，
所述第1端以及所述第2端直接接合到所述第2电路，
所述顶点经由所述接合件和所述半导体元件而连接到所述第1电路。
6.根据权利要求1至4中的任一项所述的半导体装置，其中，
所述半导体装置还具备半导体元件，
所述半导体元件包含焊盘，
所述接合件配置在所述第2电路之上，
所述第1端和所述第2端直接接合到所述半导体元件的所述焊盘，
所述顶点经由所述接合件连接到所述第2电路。
7.根据权利要求5或6所述的半导体装置，其中，
所述半导体元件是功率半导体元件。
8.根据权利要求5至7中的任一项所述的半导体装置，其中，
所述半导体装置还具备密封树脂，
所述密封树脂覆盖所述第1电路、所述第2电路、所述布线构件、所述接合件以及所述半导体元件。
9.根据权利要求5至8中的任一项所述的半导体装置，其中，
所述半导体装置还具备冷却器，
所述冷却器连接到所述第1电路，并且配置在相对于所述第1电路与所述半导体元件相反的一侧。
10.一种电力变换装置，具备：
主变换电路，具有权利要求1至9中的任一项所述的所述半导体装置，该主变换电路将输入的电力进行变换并输出；以及
控制电路，将控制所述主变换电路的控制信号输出到所述主变换电路。
11.一种半导体装置的制造方法，具备：
准备工序，准备第1电路、第2电路以及布线构件，所述布线构件包含第1端、第2端以及位于所述第1端和所述第2端之间的顶点；
连接工序，将所述布线构件的所述第1端和所述第2端连接到所述第1电路和所述第2电路中的任意一方；以及
液相扩散接合工序，将所述布线构件的所述顶点经由接合件连接到所述第1电路和所述第2电路中的任意另一方，通过液相扩散接合来接合所述顶点和所述接合件。
12.根据权利要求11所述的半导体装置的制造方法，其中，
在所述准备工序中，还准备包含焊盘的半导体元件，
在所述连接工序中，所述第1端和所述第2端直接接合到所述第2电路，
在所述液相扩散接合工序中，所述接合件配置在所述半导体元件的所述焊盘之上。
13.根据权利要求11所述的半导体装置的制造方法，其中，
在所述准备工序中，还准备包含焊盘的半导体元件，
在所述连接工序中，所述第1端和所述第2端直接接合到所述半导体元件的所述焊盘，
在所述液相扩散接合工序中，所述接合件配置在所述第2电路之上。
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