JPS5578524A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5578524A
JPS5578524A JP15288778A JP15288778A JPS5578524A JP S5578524 A JPS5578524 A JP S5578524A JP 15288778 A JP15288778 A JP 15288778A JP 15288778 A JP15288778 A JP 15288778A JP S5578524 A JPS5578524 A JP S5578524A
Authority
JP
Japan
Prior art keywords
substrate
silicon
gas
silicon carbide
reactive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15288778A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6237527B2 (enrdf_load_html_response
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP15288778A priority Critical patent/JPS5578524A/ja
Publication of JPS5578524A publication Critical patent/JPS5578524A/ja
Publication of JPS6237527B2 publication Critical patent/JPS6237527B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Led Devices (AREA)
JP15288778A 1978-12-10 1978-12-10 Manufacture of semiconductor device Granted JPS5578524A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15288778A JPS5578524A (en) 1978-12-10 1978-12-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15288778A JPS5578524A (en) 1978-12-10 1978-12-10 Manufacture of semiconductor device

Related Child Applications (8)

Application Number Title Priority Date Filing Date
JP5560881A Division JPS56153727A (en) 1981-04-15 1981-04-15 Manufacture of semiconductor device
JP5560681A Division JPS56169320A (en) 1981-04-15 1981-04-15 Silicon carbide semiconductor
JP5560781A Division JPS56169321A (en) 1981-04-15 1981-04-15 Silicon carbide semiconductor
JP57126046A Division JPS5825226A (ja) 1982-07-19 1982-07-19 プラズマ気相反応装置
JP57126047A Division JPS5825227A (ja) 1982-07-19 1982-07-19 半導体装置作製方法
JP58048504A Division JPS5967625A (ja) 1983-03-23 1983-03-23 半導体
JP62065998A Division JPS6366923A (ja) 1987-03-20 1987-03-20 連続式半導体被膜形成装置
JP62065997A Division JPS6366922A (ja) 1987-03-20 1987-03-20 半導体装置作製方法

Publications (2)

Publication Number Publication Date
JPS5578524A true JPS5578524A (en) 1980-06-13
JPS6237527B2 JPS6237527B2 (enrdf_load_html_response) 1987-08-13

Family

ID=15550286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15288778A Granted JPS5578524A (en) 1978-12-10 1978-12-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5578524A (enrdf_load_html_response)

Cited By (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56169320A (en) * 1981-04-15 1981-12-26 Shunpei Yamazaki Silicon carbide semiconductor
JPS5742331A (en) * 1980-08-26 1982-03-09 Canon Inc Manufacture for deposited film
JPS5743413A (en) * 1980-05-19 1982-03-11 Energy Conversion Devices Inc Semiconductor element and method of producing same
JPS5787120A (en) * 1980-11-20 1982-05-31 Matsushita Electric Ind Co Ltd Method and device for plasma cvd
JPS5795677A (en) * 1980-12-03 1982-06-14 Kanegafuchi Chem Ind Co Ltd Amorphous silicon type photoelectric tranducer
JPS57162423A (en) * 1981-03-16 1982-10-06 Atlantic Richfield Co Continuously depositing device
JPS57194521A (en) * 1981-05-25 1982-11-30 Sekisui Chem Co Ltd Manufacture of thin film semiconductor
JPS5821817A (ja) * 1981-07-31 1983-02-08 Nippon Telegr & Teleph Corp <Ntt> 非晶質多層薄膜作製装置
JPS5850733A (ja) * 1981-09-21 1983-03-25 Fuji Electric Corp Res & Dev Ltd 太陽電池用薄膜量産装置
JPS5860537U (ja) * 1981-10-21 1983-04-23 市光工業株式会社 車輛用灯具
JPS5870524A (ja) * 1981-09-28 1983-04-27 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド 基板上に本体材料をデポジツトする方法及びシステム
JPS5893322A (ja) * 1981-11-30 1983-06-03 Semiconductor Energy Lab Co Ltd 半導体装置製造装置
JPS5893321A (ja) * 1981-11-30 1983-06-03 Semiconductor Energy Lab Co Ltd 半導体装置製造装置
JPS58174570A (ja) * 1982-03-29 1983-10-13 エナージー・コンバーション・デバイセス・インコーポレーテッド グロー放電法による膜形成装置
JPS58190810A (ja) * 1983-03-16 1983-11-07 Yoshihiro Hamakawa Ｐ型アモルフアスシリコンカ−バイドの製造方法
JPS5916328A (ja) * 1982-07-19 1984-01-27 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
JPS5916329A (ja) * 1982-07-19 1984-01-27 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
JPS5941470A (ja) * 1982-08-31 1984-03-07 Shimadzu Corp 多室形薄膜作成装置
JPS5952835A (ja) * 1982-09-20 1984-03-27 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
JPS5958820A (ja) * 1982-09-28 1984-04-04 Matsushita Electronics Corp 気相エピタキシヤル成長装置
JPS59100516A (ja) * 1982-11-12 1984-06-09 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド 光電池素子の製造装置及びアセンブリ
JPS59167013A (ja) * 1983-03-12 1984-09-20 Agency Of Ind Science & Technol プラズマｃｖｄ装置
JPS59167012A (ja) * 1983-03-12 1984-09-20 Agency Of Ind Science & Technol プラズマｃｖｄ装置
JPS6010681A (ja) * 1983-06-30 1985-01-19 Canon Inc 光電変換部材の製造装置
JPS60131970A (ja) * 1983-12-20 1985-07-13 Canon Inc 堆積膜形成法
JPS6123760A (ja) * 1984-07-09 1986-02-01 Canon Inc 電子写真感光体の製造方法
JPS62112318A (ja) * 1985-11-12 1987-05-23 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS62118520A (ja) * 1985-11-18 1987-05-29 Semiconductor Energy Lab Co Ltd 電子サイクロトロン共鳴を用いて被膜を形成する方法
JPS62167885A (ja) * 1986-11-19 1987-07-24 Semiconductor Energy Lab Co Ltd 炭素被膜を有する複合体の作製方法
JPH01157520A (ja) * 1988-11-18 1989-06-20 Semiconductor Energy Lab Co Ltd プラズマ気相反応方法
JPH02283078A (ja) * 1989-05-15 1990-11-20 Semiconductor Energy Lab Co Ltd 発光素子
JPH0562919A (ja) * 1980-10-24 1993-03-12 Semiconductor Energy Lab Co Ltd セミアモルフアス半導体材料
JPH05251340A (ja) * 1991-06-28 1993-09-28 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPH05251356A (ja) * 1991-11-06 1993-09-28 Semiconductor Energy Lab Co Ltd 被膜形成方法
JPH05304096A (ja) * 1991-11-06 1993-11-16 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPH05343714A (ja) * 1991-12-24 1993-12-24 Kanegafuchi Chem Ind Co Ltd アモルフアスシリコン系光電素子の製造方法
JPH0697473A (ja) * 1992-05-06 1994-04-08 Kanegafuchi Chem Ind Co Ltd アモルフアスシリコン系光電素子の製造方法
JPH06101047A (ja) * 1993-03-30 1994-04-12 Semiconductor Energy Lab Co Ltd 珪素を含む炭素被膜およびその作製方法
JPH0769613A (ja) * 1992-08-25 1995-03-14 Semiconductor Energy Lab Co Ltd 炭素を主成分とする材料の作製方法
JPH0774117A (ja) * 1994-07-25 1995-03-17 Semiconductor Energy Lab Co Ltd 半導体装置製造方法
JPH0774118A (ja) * 1994-07-25 1995-03-17 Semiconductor Energy Lab Co Ltd 半導体装置製造方法
US5976259A (en) * 1985-02-14 1999-11-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
US6043105A (en) * 1985-05-07 2000-03-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor sensitive devices
US6180991B1 (en) 1982-12-23 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of phosphorous
US6221701B1 (en) 1984-05-18 2001-04-24 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer
JP2010040971A (ja) * 2008-08-08 2010-02-18 Chikao Kimura 薄膜半導体層の形成方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS=1978 *
PHILOS MAG=1977 *

Cited By (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5743413A (en) * 1980-05-19 1982-03-11 Energy Conversion Devices Inc Semiconductor element and method of producing same
JPS6122622A (ja) * 1980-05-19 1986-01-31 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド 光起電力パネルの製造方法及び装置
JPS5742331A (en) * 1980-08-26 1982-03-09 Canon Inc Manufacture for deposited film
JPH0562919A (ja) * 1980-10-24 1993-03-12 Semiconductor Energy Lab Co Ltd セミアモルフアス半導体材料
JPS5787120A (en) * 1980-11-20 1982-05-31 Matsushita Electric Ind Co Ltd Method and device for plasma cvd
JPS5795677A (en) * 1980-12-03 1982-06-14 Kanegafuchi Chem Ind Co Ltd Amorphous silicon type photoelectric tranducer
JPS57162423A (en) * 1981-03-16 1982-10-06 Atlantic Richfield Co Continuously depositing device
JPS56169320A (en) * 1981-04-15 1981-12-26 Shunpei Yamazaki Silicon carbide semiconductor
JPS57194521A (en) * 1981-05-25 1982-11-30 Sekisui Chem Co Ltd Manufacture of thin film semiconductor
JPS5821817A (ja) * 1981-07-31 1983-02-08 Nippon Telegr & Teleph Corp <Ntt> 非晶質多層薄膜作製装置
JPS5850733A (ja) * 1981-09-21 1983-03-25 Fuji Electric Corp Res & Dev Ltd 太陽電池用薄膜量産装置
JPS5870524A (ja) * 1981-09-28 1983-04-27 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド 基板上に本体材料をデポジツトする方法及びシステム
JPS5860537U (ja) * 1981-10-21 1983-04-23 市光工業株式会社 車輛用灯具
JPS5893322A (ja) * 1981-11-30 1983-06-03 Semiconductor Energy Lab Co Ltd 半導体装置製造装置
JPS5893321A (ja) * 1981-11-30 1983-06-03 Semiconductor Energy Lab Co Ltd 半導体装置製造装置
JPS58174570A (ja) * 1982-03-29 1983-10-13 エナージー・コンバーション・デバイセス・インコーポレーテッド グロー放電法による膜形成装置
JPS5916328A (ja) * 1982-07-19 1984-01-27 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
JPS5916329A (ja) * 1982-07-19 1984-01-27 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
JPS5941470A (ja) * 1982-08-31 1984-03-07 Shimadzu Corp 多室形薄膜作成装置
JPS5952835A (ja) * 1982-09-20 1984-03-27 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
JPS5958820A (ja) * 1982-09-28 1984-04-04 Matsushita Electronics Corp 気相エピタキシヤル成長装置
JPS59100516A (ja) * 1982-11-12 1984-06-09 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド 光電池素子の製造装置及びアセンブリ
US6180991B1 (en) 1982-12-23 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of phosphorous
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
JPS59167012A (ja) * 1983-03-12 1984-09-20 Agency Of Ind Science & Technol プラズマｃｖｄ装置
JPS59167013A (ja) * 1983-03-12 1984-09-20 Agency Of Ind Science & Technol プラズマｃｖｄ装置
JPS58190810A (ja) * 1983-03-16 1983-11-07 Yoshihiro Hamakawa Ｐ型アモルフアスシリコンカ−バイドの製造方法
JPS6010681A (ja) * 1983-06-30 1985-01-19 Canon Inc 光電変換部材の製造装置
US6503771B1 (en) 1983-08-22 2003-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectrically sensitive device
JPS60131970A (ja) * 1983-12-20 1985-07-13 Canon Inc 堆積膜形成法
US6635520B1 (en) 1984-05-18 2003-10-21 Semiconductor Energy Laboratory Co., Ltd. Operation method of semiconductor devices
US6660574B1 (en) 1984-05-18 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Method of forming a semiconductor device including recombination center neutralizer
US6680486B1 (en) 1984-05-18 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
US6221701B1 (en) 1984-05-18 2001-04-24 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
US6734499B1 (en) 1984-05-18 2004-05-11 Semiconductor Energy Laboratory Co., Ltd. Operation method of semiconductor devices
JPS6123760A (ja) * 1984-07-09 1986-02-01 Canon Inc 電子写真感光体の製造方法
US5976259A (en) * 1985-02-14 1999-11-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
US6113701A (en) * 1985-02-14 2000-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer
US6043105A (en) * 1985-05-07 2000-03-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor sensitive devices
JPS62112318A (ja) * 1985-11-12 1987-05-23 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS62118520A (ja) * 1985-11-18 1987-05-29 Semiconductor Energy Lab Co Ltd 電子サイクロトロン共鳴を用いて被膜を形成する方法
JPS62167885A (ja) * 1986-11-19 1987-07-24 Semiconductor Energy Lab Co Ltd 炭素被膜を有する複合体の作製方法
JPH01157520A (ja) * 1988-11-18 1989-06-20 Semiconductor Energy Lab Co Ltd プラズマ気相反応方法
JPH02283078A (ja) * 1989-05-15 1990-11-20 Semiconductor Energy Lab Co Ltd 発光素子
JPH05251340A (ja) * 1991-06-28 1993-09-28 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPH05304096A (ja) * 1991-11-06 1993-11-16 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPH05251356A (ja) * 1991-11-06 1993-09-28 Semiconductor Energy Lab Co Ltd 被膜形成方法
JPH05343714A (ja) * 1991-12-24 1993-12-24 Kanegafuchi Chem Ind Co Ltd アモルフアスシリコン系光電素子の製造方法
JPH0697473A (ja) * 1992-05-06 1994-04-08 Kanegafuchi Chem Ind Co Ltd アモルフアスシリコン系光電素子の製造方法
JPH0769613A (ja) * 1992-08-25 1995-03-14 Semiconductor Energy Lab Co Ltd 炭素を主成分とする材料の作製方法
JPH06101047A (ja) * 1993-03-30 1994-04-12 Semiconductor Energy Lab Co Ltd 珪素を含む炭素被膜およびその作製方法
JPH0774118A (ja) * 1994-07-25 1995-03-17 Semiconductor Energy Lab Co Ltd 半導体装置製造方法
JPH0774117A (ja) * 1994-07-25 1995-03-17 Semiconductor Energy Lab Co Ltd 半導体装置製造方法
JP2010040971A (ja) * 2008-08-08 2010-02-18 Chikao Kimura 薄膜半導体層の形成方法

Also Published As

Publication number Publication date
JPS6237527B2 (enrdf_load_html_response) 1987-08-13

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