JPS57149728A - Vapor growing device - Google Patents

Vapor growing device

Info

Publication number
JPS57149728A
JPS57149728A JP3506181A JP3506181A JPS57149728A JP S57149728 A JPS57149728 A JP S57149728A JP 3506181 A JP3506181 A JP 3506181A JP 3506181 A JP3506181 A JP 3506181A JP S57149728 A JPS57149728 A JP S57149728A
Authority
JP
Japan
Prior art keywords
cover
film
substrate
quartz
approximately
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3506181A
Other languages
Japanese (ja)
Inventor
Kenya Nakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3506181A priority Critical patent/JPS57149728A/en
Publication of JPS57149728A publication Critical patent/JPS57149728A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate

Abstract

PURPOSE:To equalize film thickness and a film component by covering the exposed section except a substrate of a substrate base plate with a quartz or ceramic cover having double structure, a hollow section thereof is evacuated or decompressed. CONSTITUTION:The cover 5 is made of the quartz 6 of 1mm. thickness and has the double structure in which the hollow section 7 with an approximately 4mm. clearance is formed, gold is evaporated to its inner surface, A2 is enclosed, and the inside is kept at approximately one fourth atmospheric pressure. Since gold reflects infrared rays, the temperature rise of a contacting surface between a reaction gas and the cover is decreased even when the contacting surface of the cover 5 with a carbon board 2 is heated when the exposed surface of the board 2 is covered with the cover, and the gorwth of a film onto the cover 5 is reduced extremely. Accordingly, when the film is formed onto the substrate 3 through gaseous-phase growth, the variation of the distribution of the impurity of the film is also little, a desired quantity can be contained, and the distribution is particularly improved remarkably at the reaction gas inlet side of the upper surface of the cover 5. The efficiency of heating is also ameliorated.
JP3506181A 1981-03-11 1981-03-11 Vapor growing device Pending JPS57149728A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3506181A JPS57149728A (en) 1981-03-11 1981-03-11 Vapor growing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3506181A JPS57149728A (en) 1981-03-11 1981-03-11 Vapor growing device

Publications (1)

Publication Number Publication Date
JPS57149728A true JPS57149728A (en) 1982-09-16

Family

ID=12431501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3506181A Pending JPS57149728A (en) 1981-03-11 1981-03-11 Vapor growing device

Country Status (1)

Country Link
JP (1) JPS57149728A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6298613A (en) * 1985-10-24 1987-05-08 Matsushita Electric Ind Co Ltd Vapor growth method
JPH03171719A (en) * 1989-11-30 1991-07-25 Nec Corp Vapor phase growth device
JP2018060929A (en) * 2016-10-06 2018-04-12 クアーズテック株式会社 Susceptor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6298613A (en) * 1985-10-24 1987-05-08 Matsushita Electric Ind Co Ltd Vapor growth method
JPH0545052B2 (en) * 1985-10-24 1993-07-08 Matsushita Electric Ind Co Ltd
JPH03171719A (en) * 1989-11-30 1991-07-25 Nec Corp Vapor phase growth device
JP2018060929A (en) * 2016-10-06 2018-04-12 クアーズテック株式会社 Susceptor

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