JPS57186319A - Manufacture of thin polycrystalline silicon film - Google Patents

Manufacture of thin polycrystalline silicon film

Info

Publication number
JPS57186319A
JPS57186319A JP56069898A JP6989881A JPS57186319A JP S57186319 A JPS57186319 A JP S57186319A JP 56069898 A JP56069898 A JP 56069898A JP 6989881 A JP6989881 A JP 6989881A JP S57186319 A JPS57186319 A JP S57186319A
Authority
JP
Japan
Prior art keywords
substrate
chamber
thin film
film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56069898A
Other languages
Japanese (ja)
Other versions
JPH0341977B2 (en
Inventor
Toshiyuki Komatsu
Yutaka Hirai
Takashi Nakagiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP56069898A priority Critical patent/JPS57186319A/en
Publication of JPS57186319A publication Critical patent/JPS57186319A/en
Publication of JPH0341977B2 publication Critical patent/JPH0341977B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To obtain a thin film having good crystallinity and high mobility by discharging and decomposing a raw material with more than minimum discharging power saturating the accumulating speed in the gas flow rate of the material when disposing a substrate in a bell-jar vacuum accumulation chamber and accumulating a thin polycrystalline Si film on the substrate and heat treating the accumulated thin film with activated H2. CONSTITUTION:A cathode electrode 313 and a heating holder 302 becoming an electrode of an anode side faced with the electrode are arranged in a bell-jar vacuum accumulation chamber 301 having externally a pressure regulating valve 310 connected to a diffusion pump 308 and a pressure gauge 312, a glass substrate 300 is bonded to the lower surface of the holder, and the substrate 300 is heated to 350 deg.C while measuring the temperature with a thermocouple 303. Then, the pressure in the chamber 301 is set to 0.2 Torr, H2 gas containing 10% of SiH4 is fed into the chamber 301 through a controller 304, an RF discharging power is set to 4.0X10<-3>W/cm<2>, and a thin film is produced on the substrate 200. Thereafter, SiH4/Ar or the like is fed, the power is lowered, and the film is heat treated.
JP56069898A 1981-05-09 1981-05-09 Manufacture of thin polycrystalline silicon film Granted JPS57186319A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56069898A JPS57186319A (en) 1981-05-09 1981-05-09 Manufacture of thin polycrystalline silicon film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56069898A JPS57186319A (en) 1981-05-09 1981-05-09 Manufacture of thin polycrystalline silicon film

Publications (2)

Publication Number Publication Date
JPS57186319A true JPS57186319A (en) 1982-11-16
JPH0341977B2 JPH0341977B2 (en) 1991-06-25

Family

ID=13415973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56069898A Granted JPS57186319A (en) 1981-05-09 1981-05-09 Manufacture of thin polycrystalline silicon film

Country Status (1)

Country Link
JP (1) JPS57186319A (en)

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
J.NON-CRYST.SOLIDS=1979 *
JAPAN.J.APPL.PHYS=1980 *

Also Published As

Publication number Publication date
JPH0341977B2 (en) 1991-06-25

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