JPS57178318A - Manufacture of polycrystalline silicon thin film - Google Patents

Manufacture of polycrystalline silicon thin film

Info

Publication number
JPS57178318A
JPS57178318A JP56063636A JP6363681A JPS57178318A JP S57178318 A JPS57178318 A JP S57178318A JP 56063636 A JP56063636 A JP 56063636A JP 6363681 A JP6363681 A JP 6363681A JP S57178318 A JPS57178318 A JP S57178318A
Authority
JP
Japan
Prior art keywords
substrate
thin film
discharge power
silicon thin
bell jar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56063636A
Other languages
Japanese (ja)
Other versions
JPH044747B2 (en
Inventor
Toshiyuki Komatsu
Yutaka Hirai
Takashi Nakagiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP56063636A priority Critical patent/JPS57178318A/en
Publication of JPS57178318A publication Critical patent/JPS57178318A/en
Publication of JPH044747B2 publication Critical patent/JPH044747B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To easily obtain a silicon thin film with superior crystalization, equal diameter of crystalline grain, and good orientation by a method wherein a raw material substance is discharged and decomposed by discharge power and a polycrystalline silicon thin film is formed on a substrate. CONSTITUTION:After washing a substrate 300, the surface of the substrate 300 is softly etched and after drying the substrate 300, the substrate 300 is mounted on a substrate heating holder 302 placed at the anode side in a bell jar 301. Exhaustion is made for the bell jar 301 by a diffusion pump 309. A substrate temperature is increased and after stabilizing the pressure in the bell jar 301, power is applied to a cathode electrode 313 by a high-frequency electric field source 314 to start glow discharge. The discharge power is 1/10 or more of the minimum discharge power saturating accumulation speed at the gas flow rate of a raw material substance at the time of induction and that not satisfies the minimum discharge power.
JP56063636A 1981-04-27 1981-04-27 Manufacture of polycrystalline silicon thin film Granted JPS57178318A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56063636A JPS57178318A (en) 1981-04-27 1981-04-27 Manufacture of polycrystalline silicon thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56063636A JPS57178318A (en) 1981-04-27 1981-04-27 Manufacture of polycrystalline silicon thin film

Publications (2)

Publication Number Publication Date
JPS57178318A true JPS57178318A (en) 1982-11-02
JPH044747B2 JPH044747B2 (en) 1992-01-29

Family

ID=13235032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56063636A Granted JPS57178318A (en) 1981-04-27 1981-04-27 Manufacture of polycrystalline silicon thin film

Country Status (1)

Country Link
JP (1) JPS57178318A (en)

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
APPL.PHYS.LETT=1981 *
J.NON-CRYST.SOLEDS=1979 *
JAPAN.J.APPL.PHYS=1980 *

Also Published As

Publication number Publication date
JPH044747B2 (en) 1992-01-29

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