JPS57172741A - Method for forming insulating film for semiconductor device - Google Patents

Method for forming insulating film for semiconductor device

Info

Publication number
JPS57172741A
JPS57172741A JP56057067A JP5706781A JPS57172741A JP S57172741 A JPS57172741 A JP S57172741A JP 56057067 A JP56057067 A JP 56057067A JP 5706781 A JP5706781 A JP 5706781A JP S57172741 A JPS57172741 A JP S57172741A
Authority
JP
Japan
Prior art keywords
monomer
insulating film
organic
substrate
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56057067A
Other languages
Japanese (ja)
Inventor
Hiroaki Hiratsuka
Takeshi Okada
Yuzo Katayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56057067A priority Critical patent/JPS57172741A/en
Publication of JPS57172741A publication Critical patent/JPS57172741A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain the insulating film having excellent heat resistance quickly, by using a glow discharge plasma polymerization method which is characterized by a low film forming temperature, excellent adhesion to a substrate, and few pinholes, and utilizing an organic Si compound as a monomer. CONSTITUTION:The substrate 10 is put on an electrode 3 wherein cooling water is flowed. After air is exhausted to 10<-5> Torr or less without supplying the monomer, the organic Si gas is introduced into a reacting device alone or with inactive gas such as He as a carrier, and the pressure is maintained at 0.1-2 Torr by adjusting exhausting quantity. Thereafter, high frequency power of 5- 100 W is applied, and a plasma polymer is formed on the substrate 10. If the organic Si monomer is liquid state at an ordinary temperature, its vapor can be introduced by using the carrier gas. The monomer does not necessarily require an unsaturated group such as a vinyl group. In this constitution, the film forming speed is excellent, and the insulating film having excellent heat resistance and quality can be obtained.
JP56057067A 1981-04-17 1981-04-17 Method for forming insulating film for semiconductor device Pending JPS57172741A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56057067A JPS57172741A (en) 1981-04-17 1981-04-17 Method for forming insulating film for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56057067A JPS57172741A (en) 1981-04-17 1981-04-17 Method for forming insulating film for semiconductor device

Publications (1)

Publication Number Publication Date
JPS57172741A true JPS57172741A (en) 1982-10-23

Family

ID=13045094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56057067A Pending JPS57172741A (en) 1981-04-17 1981-04-17 Method for forming insulating film for semiconductor device

Country Status (1)

Country Link
JP (1) JPS57172741A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121937A (en) * 1982-12-23 1984-07-14 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン Method of forming polyorgano silicon layer
EP0150878A2 (en) * 1984-01-28 1985-08-07 Philips Patentverwaltung GmbH Process for the manufacture of a thin film strain gage system
JPS63228625A (en) * 1987-03-18 1988-09-22 Toshiba Corp Apparatus and method for depositing thin film
US6852931B2 (en) * 2001-03-26 2005-02-08 Infineon Technologies Ag Configuration having an electronic device electrically connected to a printed circuit board
JP2007005364A (en) * 2005-06-21 2007-01-11 Matsushita Electric Ind Co Ltd Semiconductor device manufacturing method, and semiconductor device
US7691453B2 (en) 2004-02-13 2010-04-06 Panasonic Corporation Method for forming organic/inorganic hybrid insulation film

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121937A (en) * 1982-12-23 1984-07-14 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン Method of forming polyorgano silicon layer
EP0150878A2 (en) * 1984-01-28 1985-08-07 Philips Patentverwaltung GmbH Process for the manufacture of a thin film strain gage system
EP0301604A2 (en) * 1984-01-28 1989-02-01 Philips Patentverwaltung GmbH Apparatus for coating a substrate by plasma-chemical vapour deposition or cathodic sputtering, and process using the apparatus
JPS63228625A (en) * 1987-03-18 1988-09-22 Toshiba Corp Apparatus and method for depositing thin film
US6852931B2 (en) * 2001-03-26 2005-02-08 Infineon Technologies Ag Configuration having an electronic device electrically connected to a printed circuit board
US7340826B2 (en) 2001-03-26 2008-03-11 Infineon Technologies Ag Method for producing an electronic device connected to a printed circuit board
US7691453B2 (en) 2004-02-13 2010-04-06 Panasonic Corporation Method for forming organic/inorganic hybrid insulation film
JP2007005364A (en) * 2005-06-21 2007-01-11 Matsushita Electric Ind Co Ltd Semiconductor device manufacturing method, and semiconductor device

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