JPS5785821A - Production of high-molecular semiconductive film - Google Patents

Production of high-molecular semiconductive film

Info

Publication number
JPS5785821A
JPS5785821A JP55160829A JP16082980A JPS5785821A JP S5785821 A JPS5785821 A JP S5785821A JP 55160829 A JP55160829 A JP 55160829A JP 16082980 A JP16082980 A JP 16082980A JP S5785821 A JPS5785821 A JP S5785821A
Authority
JP
Japan
Prior art keywords
molecular
film
polyaniline
semiconductive film
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55160829A
Other languages
Japanese (ja)
Other versions
JPS6352664B2 (en
Inventor
Fumihiro Ebisawa
Michiya Fujiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55160829A priority Critical patent/JPS5785821A/en
Publication of JPS5785821A publication Critical patent/JPS5785821A/en
Publication of JPS6352664B2 publication Critical patent/JPS6352664B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Application Of Or Painting With Fluid Materials (AREA)
  • Surface Treatment Of Glass (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Bipolar Transistors (AREA)
  • Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE: To obtain a high-molecular semiconductive film having utility in solar batteries, by directly forming a film on a substrate by ion-sputtering a target which is a solid monomer, oligomer (dimer or higher oligomer) or polymer.
CONSTITUTION: A bell jar 1 is evacuated to a degree of vacuum of 10-5 Torr by a diffusion pump 7 and an oil rotary pump 8. Next, Ar gas 9 is leaked to set a Pirani gauge at 20W50μ Torr. The Ar gas is glow-discharged by setting the voltage from a D.C. high-voltage source 5 and the current at 2W3KV and 5W 10mA, respectively. The Ar gas impinges on the starting material 4, e.g., aniline dimer or polyaniline, whereby the starting material 4 is excited to the radical state and, at the same time, undergoes a polymerization reaction to form a high- molecular semiconductive film on a substrate 3. Thus, the production of polyaniline films becomes possible and accordingly it is possible to produce inexpensive functional elements by using such a polyaniline film in a functional element using a high-molecular semiconductive film, such as a solar battery.
COPYRIGHT: (C)1982,JPO&Japio
JP55160829A 1980-11-17 1980-11-17 Production of high-molecular semiconductive film Granted JPS5785821A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55160829A JPS5785821A (en) 1980-11-17 1980-11-17 Production of high-molecular semiconductive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55160829A JPS5785821A (en) 1980-11-17 1980-11-17 Production of high-molecular semiconductive film

Publications (2)

Publication Number Publication Date
JPS5785821A true JPS5785821A (en) 1982-05-28
JPS6352664B2 JPS6352664B2 (en) 1988-10-19

Family

ID=15723302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55160829A Granted JPS5785821A (en) 1980-11-17 1980-11-17 Production of high-molecular semiconductive film

Country Status (1)

Country Link
JP (1) JPS5785821A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60501262A (en) * 1983-05-06 1985-08-08 コミツサレ・ア・レナジイ・アトミツク Process for producing polyaniline, polyanine obtained by this process and its use in the production of electrochemical generators
JPS61256764A (en) * 1985-05-10 1986-11-14 Nitto Electric Ind Co Ltd Schottky bonding element
JPS61256765A (en) * 1985-05-10 1986-11-14 Nitto Electric Ind Co Ltd Heterojunction element
JPH01154571A (en) * 1987-12-11 1989-06-16 Ricoh Co Ltd Photoelectric converter

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60501262A (en) * 1983-05-06 1985-08-08 コミツサレ・ア・レナジイ・アトミツク Process for producing polyaniline, polyanine obtained by this process and its use in the production of electrochemical generators
JPS61256764A (en) * 1985-05-10 1986-11-14 Nitto Electric Ind Co Ltd Schottky bonding element
JPS61256765A (en) * 1985-05-10 1986-11-14 Nitto Electric Ind Co Ltd Heterojunction element
JPH01154571A (en) * 1987-12-11 1989-06-16 Ricoh Co Ltd Photoelectric converter

Also Published As

Publication number Publication date
JPS6352664B2 (en) 1988-10-19

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