JPH11326954A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPH11326954A
JPH11326954A JP10152318A JP15231898A JPH11326954A JP H11326954 A JPH11326954 A JP H11326954A JP 10152318 A JP10152318 A JP 10152318A JP 15231898 A JP15231898 A JP 15231898A JP H11326954 A JPH11326954 A JP H11326954A
Authority
JP
Japan
Prior art keywords
semiconductor device
pixel
film
sensor
tft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP10152318A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11326954A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Jun Koyama
潤 小山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP10152318A priority Critical patent/JPH11326954A/ja
Priority to US09/309,966 priority patent/US6236063B1/en
Publication of JPH11326954A publication Critical patent/JPH11326954A/ja
Priority to US09/809,672 priority patent/US6583439B2/en
Priority to US10/430,581 priority patent/US7180092B2/en
Publication of JPH11326954A5 publication Critical patent/JPH11326954A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13318—Circuits comprising a photodetector
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133604—Direct backlight with lamps
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP10152318A 1998-05-15 1998-05-15 半導体装置 Withdrawn JPH11326954A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP10152318A JPH11326954A (ja) 1998-05-15 1998-05-15 半導体装置
US09/309,966 US6236063B1 (en) 1998-05-15 1999-05-11 Semiconductor device
US09/809,672 US6583439B2 (en) 1998-05-15 2001-03-15 Semiconductor device
US10/430,581 US7180092B2 (en) 1998-05-15 2003-05-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10152318A JPH11326954A (ja) 1998-05-15 1998-05-15 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007233710A Division JP4550096B2 (ja) 2007-09-10 2007-09-10 半導体装置

Publications (2)

Publication Number Publication Date
JPH11326954A true JPH11326954A (ja) 1999-11-26
JPH11326954A5 JPH11326954A5 (enExample) 2005-10-13

Family

ID=15537913

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10152318A Withdrawn JPH11326954A (ja) 1998-05-15 1998-05-15 半導体装置

Country Status (2)

Country Link
US (3) US6236063B1 (enExample)
JP (1) JPH11326954A (enExample)

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6306694B1 (en) * 1999-03-12 2001-10-23 Semiconductor Energy Laboratory Co., Ltd. Process of fabricating a semiconductor device
JP2002049593A (ja) * 2000-04-18 2002-02-15 Semiconductor Energy Lab Co Ltd 本人認証システムまたは本人認証方法
JP2002182839A (ja) * 2000-12-12 2002-06-28 Semiconductor Energy Lab Co Ltd 情報装置
JP2003344876A (ja) * 2002-03-19 2003-12-03 Seiko Epson Corp 液晶表示装置、電気光学装置とその製造方法、電子機器
JP2005031661A (ja) * 2003-06-20 2005-02-03 Toshiba Matsushita Display Technology Co Ltd 表示装置
JP2005117281A (ja) * 2003-10-06 2005-04-28 Semiconductor Energy Lab Co Ltd 画像読み取り装置
JP2006003857A (ja) * 2003-08-25 2006-01-05 Toshiba Matsushita Display Technology Co Ltd 表示装置および光電変換素子
JP2006323199A (ja) * 2005-05-19 2006-11-30 Mitsubishi Electric Corp 光センサー一体型液晶表示装置
JP2006330578A (ja) * 2005-05-30 2006-12-07 Sony Corp 液晶表示装置
JP2008134293A (ja) * 2006-11-27 2008-06-12 Hitachi Displays Ltd 画面入力機能付き画像表示装置
US7418117B2 (en) 2002-03-12 2008-08-26 Boe-Hydis Technology Co., Ltd. Liquid crystal display device performing both image display mode and fingerprint recognition mode
WO2008156023A1 (ja) * 2007-06-21 2008-12-24 Sharp Kabushiki Kaisha 光検出装置、及びそれを備えた表示装置
US7515125B2 (en) * 2000-06-12 2009-04-07 Semiconductor Energy Laboratory Co., Ltd. Light emitting module and method of driving the same, and optical sensor
JP2009128402A (ja) * 2007-11-20 2009-06-11 Sony Corp 表示装置
JP2009157367A (ja) * 2007-12-03 2009-07-16 Semiconductor Energy Lab Co Ltd 表示装置およびその作製方法
WO2009104667A1 (ja) 2008-02-21 2009-08-27 シャープ株式会社 光センサ付き表示装置
JP2010068545A (ja) * 2009-12-21 2010-03-25 Semiconductor Energy Lab Co Ltd 半導体装置の駆動方法
JP2010091610A (ja) * 2008-10-03 2010-04-22 Toshiba Mobile Display Co Ltd 表示装置
KR100954082B1 (ko) * 2003-04-08 2010-04-23 삼성전자주식회사 액정표시장치
KR100965141B1 (ko) 2003-11-27 2010-06-23 삼성전자주식회사 표시장치 및 표시 시스템
KR100968573B1 (ko) * 2003-07-07 2010-07-08 삼성전자주식회사 액정표시장치 및 그 제조방법
KR100989334B1 (ko) 2003-02-28 2010-10-25 삼성전자주식회사 액정표시장치 및 이의 제조방법
US7830370B2 (en) 2000-06-06 2010-11-09 Semiconductor Energy Laboratory Co., Ltd. Display device and method of manufacturing the same
KR101022280B1 (ko) 2003-10-08 2011-03-21 삼성전자주식회사 액정표시장치
KR101028663B1 (ko) 2003-12-11 2011-04-12 삼성전자주식회사 표시장치
JP2012054952A (ja) * 2011-09-28 2012-03-15 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の駆動方法
US8203636B2 (en) 2000-04-12 2012-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving the same
CN102751287A (zh) * 2011-04-19 2012-10-24 瀚宇彩晶股份有限公司 液晶面板及其像素结构
US8411117B2 (en) 2007-12-20 2013-04-02 Sharp Kabushiki Kaisha Display device having optical sensors
US8437510B2 (en) 2000-04-18 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. System and method for identifying an individual
US8598583B2 (en) 2010-05-07 2013-12-03 Samsung Display Co., Ltd. Thin film transistor panel and fabricating method thereof
JP2014044433A (ja) * 2013-11-06 2014-03-13 Japan Display Inc 液晶表示装置

Families Citing this family (122)

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JP4271268B2 (ja) * 1997-09-20 2009-06-03 株式会社半導体エネルギー研究所 イメージセンサおよびイメージセンサ一体型アクティブマトリクス型表示装置
JP4044187B2 (ja) 1997-10-20 2008-02-06 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置およびその作製方法
US7248232B1 (en) 1998-02-25 2007-07-24 Semiconductor Energy Laboratory Co., Ltd. Information processing device
JPH11326954A (ja) * 1998-05-15 1999-11-26 Semiconductor Energy Lab Co Ltd 半導体装置
US6867752B1 (en) * 1998-08-31 2005-03-15 Semiconductor Energy Laboratory Co., Ltd. Portable information processing system
JP4632383B2 (ja) 1998-08-31 2011-02-16 キヤノン株式会社 光電変換装置に用いられる半導体装置
US6512504B1 (en) 1999-04-27 2003-01-28 Semiconductor Energy Laborayory Co., Ltd. Electronic device and electronic apparatus
KR100316271B1 (ko) * 1999-05-27 2001-12-12 구본준, 론 위라하디락사 전계발광소자 및 그의 제조방법
US7242449B1 (en) * 1999-07-23 2007-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and integral image recognition/display apparatus
TW522453B (en) 1999-09-17 2003-03-01 Semiconductor Energy Lab Display device
JP2001177097A (ja) * 1999-12-10 2001-06-29 Koninkl Philips Electronics Nv 薄膜トランジスタ及びその製造方法
US20020060322A1 (en) * 2000-11-20 2002-05-23 Hiroshi Tanabe Thin film transistor having high mobility and high on-current and method for manufacturing the same
US6747290B2 (en) 2000-12-12 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Information device
KR20020049875A (ko) 2000-12-20 2002-06-26 윤종용 반도체 메모리 소자의 강유전체 커패시터 및 그 제조방법
JP4485087B2 (ja) * 2001-03-01 2010-06-16 株式会社半導体エネルギー研究所 半導体装置の動作方法
JP2002299632A (ja) * 2001-03-30 2002-10-11 Sanyo Electric Co Ltd 半導体装置及びアクティブマトリクス型表示装置
US7351605B2 (en) * 2001-04-09 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US20030191693A1 (en) * 2002-04-08 2003-10-09 Itamar Aphek System and method for conducting an advertising business
JP4703883B2 (ja) 2001-04-09 2011-06-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4149168B2 (ja) 2001-11-09 2008-09-10 株式会社半導体エネルギー研究所 発光装置
KR100491143B1 (ko) * 2001-12-26 2005-05-24 삼성에스디아이 주식회사 블랙매트릭스를 구비한 평판표시장치 및 그 제조방법
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TW594336B (en) * 2002-01-30 2004-06-21 Sanyo Electric Co Semiconductor display device, method for making the same, and active matrix type display device
KR20030067125A (ko) * 2002-02-07 2003-08-14 비오이 하이디스 테크놀로지 주식회사 지주 스페이서 일체형 플라스틱 기판을 갖는 액정표시장치
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US7023503B2 (en) * 2002-02-20 2006-04-04 Planar Systems, Inc. Image sensor with photosensitive thin film transistors
US7372510B2 (en) * 2002-03-01 2008-05-13 Planar Systems, Inc. Reflection resistant touch screens
JP2003280020A (ja) * 2002-03-22 2003-10-02 Seiko Epson Corp 電気光学装置及びその製造方法並びに電子機器
US6853052B2 (en) * 2002-03-26 2005-02-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a buffer layer against stress
US7184009B2 (en) * 2002-06-21 2007-02-27 Nokia Corporation Display circuit with optical sensor
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KR101026644B1 (ko) * 2003-01-08 2011-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
EP1593159B1 (en) * 2003-02-14 2013-05-29 Canon Kabushiki Kaisha Radiation image pickup device
US20080084374A1 (en) * 2003-02-20 2008-04-10 Planar Systems, Inc. Light sensitive display
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CN100339940C (zh) * 2003-08-28 2007-09-26 友达光电股份有限公司 薄膜电晶体阵列基板及其微影制造方法与光罩设计结构
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JP4521176B2 (ja) * 2003-10-31 2010-08-11 東芝モバイルディスプレイ株式会社 表示装置
JP4253248B2 (ja) * 2003-12-12 2009-04-08 東芝松下ディスプレイテクノロジー株式会社 液晶表示装置
US20050134749A1 (en) * 2003-12-19 2005-06-23 Adiel Abileah Reflection resistant display
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