JP5058255B2 - 光検出装置、及びそれを備えた表示装置 - Google Patents
光検出装置、及びそれを備えた表示装置 Download PDFInfo
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- JP5058255B2 JP5058255B2 JP2009520451A JP2009520451A JP5058255B2 JP 5058255 B2 JP5058255 B2 JP 5058255B2 JP 2009520451 A JP2009520451 A JP 2009520451A JP 2009520451 A JP2009520451 A JP 2009520451A JP 5058255 B2 JP5058255 B2 JP 5058255B2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 52
- 229910052710 silicon Inorganic materials 0.000 claims description 52
- 239000010703 silicon Substances 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 51
- 239000002184 metal Substances 0.000 claims description 46
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000004065 semiconductor Substances 0.000 claims description 33
- 239000011159 matrix material Substances 0.000 claims description 21
- 238000001514 detection method Methods 0.000 claims description 12
- 239000010408 film Substances 0.000 description 155
- 239000010410 layer Substances 0.000 description 69
- 238000010586 diagram Methods 0.000 description 12
- 239000004973 liquid crystal related substance Substances 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 8
- 239000003574 free electron Substances 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
- G02F1/13318—Circuits comprising a photodetector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
- G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/58—Arrangements comprising a monitoring photodetector
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Liquid Crystal (AREA)
Description
以下、本発明の実施の形態における光検出装置及び表示装置について、図1〜図11を参照しながら説明する。最初に、本実施の形態における光検出装置及び表示装置の概略構成について説明する。図1は、本発明の実施の形態における光検出装置の概略構成を示す断面図である。図2は、図1に示した光検出装置を上方から見た状態を示す平面図である。図3は、図1に示した光検出装置を備える表示装置の一部分の構成を概略的に示す平面図である。なお、図1においては、後述のアクティブマトリクス基板20を構成する導体及び半導体の部材にのみハッチングを施している。また、図2及び図3においては、主な構成要素のみを図示している。
Claims (5)
- 光透過性のベース基板と、前記ベース基板の一方の主面に設けられた金属膜と、前記金属膜の上層に配置されたフォトダイオードと、前記金属膜の上層の前記フォトダイオードの周辺に配置された電極とを備え、
前記フォトダイオードは、半導体領域を有するシリコン膜を備え、前記シリコン膜は前記金属膜に対して電気的に絶縁され、
前記電極は、前記金属膜及び前記シリコン膜に対して電気的に絶縁され、
前記金属膜は、前記ベース基板の厚み方向において、その一部が前記シリコン膜と重なり、前記一部以外の部分が前記電極に重なるように、形成されていることを特徴とする光検出装置。 - 前記シリコン膜が、p型の半導体領域と、真性半導体領域と、n型の半導体領域とを備え、
前記p型の半導体領域、前記真性半導体領域、及び前記n型の半導体領域は、前記シリコン膜の面方向において隣接している請求項1に記載の光検出装置。 - アクティブマトリクス基板を有する表示装置であって、
前記アクティブマトリクス基板は、光透過性のベース基板と、前記ベース基板の一方の主面に形成された複数のアクティブ素子と、光検出装置とを備え、
前記光検出装置は、前記ベース基板の一方の主面上に設けられた金属膜と、前記金属膜の上層に配置されたフォトダイオードと、前記金属膜の上層の前記フォトダイオードの周辺に配置された電極とを備え、
前記フォトダイオードは、半導体領域を有するシリコン膜を備え、前記シリコン膜は前記金属膜に対して電気的に絶縁され、
前記電極は、前記金属膜及び前記シリコン膜に対して電気的に絶縁され、
前記金属膜は、前記ベース基板の厚み方向において、その一部が前記シリコン膜と重なり、前記一部以外の部分が前記電極に重なるように、形成されていることを特徴とする表示装置。 - 前記シリコン膜が、p型の半導体領域と、真性半導体領域と、n型の半導体領域とを備え、
前記p型の半導体領域、前記真性半導体領域、及び前記n型の半導体領域は、前記シリコン膜の面方向において隣接するように形成されている請求項3に記載の表示装置。 - 前記電極が、前記複数のアクティブ素子のいずれかに接続された配線の一部である請求項3に記載の表示装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009520451A JP5058255B2 (ja) | 2007-06-21 | 2008-06-12 | 光検出装置、及びそれを備えた表示装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP2007164283 | 2007-06-21 | ||
JP2007164283 | 2007-06-21 | ||
JP2009520451A JP5058255B2 (ja) | 2007-06-21 | 2008-06-12 | 光検出装置、及びそれを備えた表示装置 |
PCT/JP2008/060772 WO2008156023A1 (ja) | 2007-06-21 | 2008-06-12 | 光検出装置、及びそれを備えた表示装置 |
Publications (2)
Publication Number | Publication Date |
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JPWO2008156023A1 JPWO2008156023A1 (ja) | 2010-08-26 |
JP5058255B2 true JP5058255B2 (ja) | 2012-10-24 |
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Application Number | Title | Priority Date | Filing Date |
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JP2009520451A Expired - Fee Related JP5058255B2 (ja) | 2007-06-21 | 2008-06-12 | 光検出装置、及びそれを備えた表示装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8227887B2 (ja) |
EP (1) | EP2154731B1 (ja) |
JP (1) | JP5058255B2 (ja) |
CN (1) | CN101669217B (ja) |
WO (1) | WO2008156023A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11205669B2 (en) | 2014-06-09 | 2021-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including photoelectric conversion element |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120001880A1 (en) * | 2009-02-10 | 2012-01-05 | Christopher Brown | Display device |
WO2011040094A1 (ja) * | 2009-09-30 | 2011-04-07 | シャープ株式会社 | 表示装置 |
US9335854B2 (en) | 2009-09-30 | 2016-05-10 | Sharp Kabushiki Kaisha | Display device |
EP2490210B1 (en) * | 2009-11-30 | 2017-09-06 | Sharp Kabushiki Kaisha | Display device |
WO2011065558A1 (ja) * | 2009-11-30 | 2011-06-03 | シャープ株式会社 | 表示装置 |
CN102725961B (zh) * | 2010-01-15 | 2017-10-13 | 株式会社半导体能源研究所 | 半导体器件和电子设备 |
US9064460B2 (en) | 2010-05-20 | 2015-06-23 | Sharp Kabushiki Kaisha | Display device with touch sensor including photosensor |
US9122349B1 (en) * | 2014-03-19 | 2015-09-01 | Bidirectional Display Inc. | Image sensor panel and method for capturing graphical information using same |
WO2015143011A1 (en) * | 2014-03-19 | 2015-09-24 | Bidirectional Display Inc. | Image sensor panel and method for capturing graphical information using same |
KR102389626B1 (ko) * | 2014-12-11 | 2022-04-25 | 삼성디스플레이 주식회사 | 표시 패널 및 표시 패널을 포함하는 유기 발광 표시 장치 |
CN108376678B (zh) * | 2018-01-31 | 2019-11-05 | 昆山国显光电有限公司 | Oled面板以及检测阴极层偏位的方法 |
CN111430414A (zh) * | 2020-03-31 | 2020-07-17 | 京东方科技集团股份有限公司 | Oled显示面板及制备方法、显示装置 |
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2008
- 2008-06-12 JP JP2009520451A patent/JP5058255B2/ja not_active Expired - Fee Related
- 2008-06-12 CN CN2008800139549A patent/CN101669217B/zh active Active
- 2008-06-12 EP EP20080765516 patent/EP2154731B1/en not_active Not-in-force
- 2008-06-12 US US12/601,990 patent/US8227887B2/en active Active
- 2008-06-12 WO PCT/JP2008/060772 patent/WO2008156023A1/ja active Application Filing
Patent Citations (5)
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JPH11326954A (ja) * | 1998-05-15 | 1999-11-26 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2003273361A (ja) * | 2002-03-15 | 2003-09-26 | Sharp Corp | 半導体装置およびその製造方法 |
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JP2007094344A (ja) * | 2005-09-26 | 2007-04-12 | Toppoly Optoelectronics Corp | エレクトロルミネッセント装置および画素装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11205669B2 (en) | 2014-06-09 | 2021-12-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including photoelectric conversion element |
US11908876B2 (en) | 2014-06-09 | 2024-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including photoelectric conversion element |
Also Published As
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US20100193804A1 (en) | 2010-08-05 |
JPWO2008156023A1 (ja) | 2010-08-26 |
EP2154731A1 (en) | 2010-02-17 |
US8227887B2 (en) | 2012-07-24 |
CN101669217B (zh) | 2012-04-25 |
CN101669217A (zh) | 2010-03-10 |
EP2154731A4 (en) | 2014-06-18 |
EP2154731B1 (en) | 2015-05-13 |
WO2008156023A1 (ja) | 2008-12-24 |
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