US20200301185A1 - Liquid crystal displays and methods for manufacturing the same - Google Patents
Liquid crystal displays and methods for manufacturing the same Download PDFInfo
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- US20200301185A1 US20200301185A1 US16/360,546 US201916360546A US2020301185A1 US 20200301185 A1 US20200301185 A1 US 20200301185A1 US 201916360546 A US201916360546 A US 201916360546A US 2020301185 A1 US2020301185 A1 US 2020301185A1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133711—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
- G02F1/133723—Polyimide, polyamide-imide
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
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- G02F2001/136222—
Definitions
- the present disclosure relates to a liquid crystal display, and in particular to a liquid crystal display that includes a counter substrate with thin film transistors thereon.
- Liquid crystal displays that include a display panel, such as smartphones, tablets, notebooks, monitors, and TVs, have become indispensable necessities in modern society. With the flourishing development of such portable electronic products, consumers have high expectations regarding the quality, functionality, and price of such products. These electronic products are often provided with communications capabilities. Specifically, a liquid crystal display can control the rotation direction of the liquid crystal molecules for displaying.
- a liquid crystal display includes a first substrate.
- the liquid crystal display also includes a plurality of first thin film transistors disposed on the first substrate.
- the liquid crystal display further includes a second substrate disposed opposite the first substrate.
- the liquid crystal display includes a plurality of second thin film transistors disposed on the second substrate.
- the liquid crystal display also includes a plurality of sensing units disposed on the second substrate, and at least one of the plurality of sensing units electrically connected to at least one of the plurality of second thin film transistors.
- the liquid crystal display further includes a liquid crystal layer disposed between the first substrate and the second substrate.
- a method for manufacturing a liquid crystal display includes providing a first substrate.
- the method also includes forming a plurality of first thin film transistors on the first substrate.
- the method further includes providing a second substrate.
- the method includes forming a plurality of second thin film transistors on the second substrate.
- the method also includes forming a plurality of sensing units on the second substrate, and at least one of the plurality of sensing units electrically connected to at least one of the plurality of second thin film transistors.
- the method further includes combining the first substrate and the second substrate through a liquid crystal layer.
- FIG. 1 illustrates a cross-sectional view of the liquid crystal display in accordance with some embodiments of the present disclosure.
- FIG. 2 illustrates a cross-sectional view of the liquid crystal display in accordance with some embodiments of the present disclosure.
- FIG. 3 illustrates a cross-sectional view of the liquid crystal display in accordance with some embodiments of the present disclosure.
- FIGS. 4A-4C illustrate top views of the liquid crystal display shown in FIG. 3 .
- FIG. 5 illustrates a cross-sectional view of the liquid crystal display in accordance with some embodiments of the present disclosure.
- FIG. 6 illustrates a cross-sectional view of the liquid crystal display in accordance with some embodiments of the present disclosure.
- FIG. 7 illustrates a cross-sectional view of the liquid crystal display in accordance with some embodiments of the present disclosure.
- FIG. 8 illustrates a cross-sectional view of the liquid crystal display in accordance with some embodiments of the present disclosure.
- FIGS. 9A-9E illustrate cross-sectional views of different stages of a process for manufacturing the liquid crystal display in accordance with some embodiments of the present disclosure.
- FIGS. 10A-10E illustrate cross-sectional views of different stages of a process for manufacturing the liquid crystal display in accordance with some embodiments of the present disclosure.
- FIGS. 11A-11E illustrate cross-sectional views of different stages of a process for manufacturing the liquid crystal display in accordance with some embodiments of the present disclosure.
- FIG. 12 illustrates a cross-sectional view of the liquid crystal display in accordance with some embodiments of the present disclosure.
- first material layer disposed above/on/over a second material layer may indicate the direct contact of the first material layer and the second material layer, or it may indicate a non-contact state with one or more intermediate layers between the first material layer and the second material layer. In the above situation, the first material layer may not be in direct contact with the second material layer.
- first, second, third etc. may be used herein to describe various elements, components, regions, layers, portions and/or sections, these elements, components, regions, layers, portions and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, portion or section from another element, component, region, layer or section. Thus, a first element, component, region, layer, portion or section discussed below could be termed a second element, component, region, layer, portion or section without departing from the teachings of the present disclosure.
- the terms “about” and “substantially” typically mean +/ ⁇ 20% of the stated value, more typically +/ ⁇ 10% of the stated value, more typically +/ ⁇ 5% of the stated value, more typically +/ ⁇ 3% of the stated value, more typically +/ ⁇ 2% of the stated value, more typically +/ ⁇ 1% of the stated value and even more typically +/ ⁇ 0.5% of the stated value.
- the stated value of the present disclosure is an approximate value. When there is no specific description, the stated value includes the meaning of “about” or “substantially”. Moreover, when considering the deviation or the fluctuation of the manufacturing process, the term “same” may also include the meaning of “about” or “substantially”.
- attachments, coupling and the like refer to a relationship wherein structures are secured or attached to one another either directly or indirectly through intervening structures, as well as both movable or rigid attachments or relationships, unless expressly described otherwise.
- the phrase “in a range from a first value to a second value” indicates the range includes the first value, the second value, and other values in between.
- cover includes the meaning of “cover partially” or “cover completely”.
- the liquid crystal display 100 A may include a first substrate 102 .
- the first substrate 102 may include a glass substrate, a ceramic substrate, a polymer substrate, other suitable substrates, or a combination thereof.
- a buffer layer 104 may be disposed on the first substrate 102 .
- the buffer layer 104 may include multiple layers with different materials.
- a gate dielectric layer 106 may be disposed on the buffer layer 104 .
- the material of the gate dielectric layer 106 may include, but is not limited to, silicon oxide (SiOx), silicon nitride (SiNy), high dielectric constant (high-k) dielectric material or other suitable dielectric materials.
- the liquid crystal display 100 A may include a plurality of first thin film transistors 108 .
- the first thin film transistor 108 may include a gate electrode 110 , a source 112 , a drain 114 and a semiconductor layer 116 .
- the gate electrode 110 may be disposed on the buffer layer 104 .
- the thin film transistors in the present disclosure may include a top gate thin film transistor, a bottom gate thin film transistor, a dual gate thin film transistor, a double gate thin film transistor, other suitable transistors, or a combination thereof.
- the material of the gate electrode 110 may include metal, such as copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt), titanium (Ti).
- metal such as copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt), titanium (Ti).
- the source 112 , the drain 114 and the semiconductor layer 116 may be disposed on the gate dielectric layer 106 .
- the material of the semiconductor layer 116 of the first thin film transistor 108 may include, but is not limited to, amorphous silicon, polysilicon such as low-temp polysilicon (LTPS), metal oxide or other suitable materials.
- the metal oxide may include indium gallium zinc oxide (IGZO), indium zinc oxide (IZO), indium gallium zinc tin oxide (IGZTO), low temperature polycrystalline oxide (LTPO), other suitable materials, or a combination thereof.
- the material of the source 112 and the drain 114 may include metal, such as copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt), titanium (Ti).
- metal such as copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt), titanium (Ti).
- the liquid crystal display 100 may include pads or contacts (not shown) that are electrically connected to the source 112 and/or the drain 114 .
- the pads or the contacts may be used to electrically connect the first thin film transistor 108 to other electronic elements (not shown).
- the liquid crystal display 100 may include a dielectric layer 120 disposed on the gate dielectric layer 106 .
- the material of the dielectric layer 120 may include phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), low dielectric constant (low-k) material and/or other suitable material(s).
- the low dielectric constant dielectric materials may include, but are not limited to, fluorinated silica glass (FSG), silicon oxide, silicon nitride, amorphous fluorinated carbon, parylene, bis-benzocyclobutenes (BCB), polyimides, or other suitable materials. Though it is not depicted, some metal wires or through holes may be formed in the dielectric layer 120 .
- FSG fluorinated silica glass
- silicon oxide silicon oxide
- silicon nitride silicon nitride
- amorphous fluorinated carbon parylene
- BCB bis-benzocyclobutenes
- polyimides polyimides
- the liquid crystal display 100 may include a second substrate 122 that is disposed opposite to the first substrate 102 .
- the second substrate 122 may include a glass substrate, a ceramic substrate, a polymer substrate, other suitable substrates, or a combination thereof.
- a buffer layer 124 may be disposed on the second substrate 122 .
- the buffer layer 124 may include multiple layers with different materials.
- a shielding layer 126 may be disposed on the second substrate 122 and/or in the buffer layer 124 .
- the shielding layer 126 may be a light shielding layer that allows specific wavelength of light or a portion of light to pass through. It should be appreciated that although FIG. 1 illustrates the gate electrode 136 is in directly contact with the shielding layer 126 , some additional layers may be disposed between the gate electrode 136 and the shielding layer 126 .
- a gate dielectric layer 128 is disposed on the buffer layer 124 .
- the material of the gate dielectric layer 128 may be the same as or similar to the gate dielectric layer 106 , and thus it is not repeated herein.
- a dielectric layer 130 and a dielectric layer 132 may be disposed on the gate dielectric layer 128 .
- the dielectric layers 130 and 132 may include, but is not limited to, PSG, BPSG, FSG, silicon oxide, silicon nitride, amorphous fluorinated carbon, parylene, BCB, polyimides, or other suitable materials. Though it is not depicted, some metal wires or through holes may be formed in the dielectric layer 130 and/or dielectric layer 132 .
- the liquid crystal display 100 A may include a second thin film transistor 134 . It should be appreciated that FIG. 1 illustrates only one second thin film transistor 134 . However, the liquid crystal display 100 A may include more second thin film transistors 134 in other cross sections.
- the second thin film transistor 134 may include a gate electrode 136 , a source 138 , a drain 140 and a semiconductor layer 142 .
- the material of the gate electrode 136 may include metal, such as copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt), titanium (Ti).
- the source 138 , the drain 140 and the semiconductor layer 142 may be disposed on the gate dielectric layer 128 .
- the material of the semiconductor layer 142 of the second thin film transistor 134 may include, but is not limited to, amorphous silicon, polysilicon such as low-temp polysilicon (LTPS), metal oxide or other suitable materials.
- the metal oxide may include indium gallium zinc oxide (IGZO), indium zinc oxide (IZO), indium gallium zinc tin oxide (IGZTO), low temperature polycrystalline oxide (LTPO), other suitable materials, or a combination thereof.
- the material of the source 138 and the drain 140 may include metal.
- the semiconductor layer may include different compositions of In, Ga, and Zn, such as 1:1:1:4 or other suitable composition(s).
- the material of the semiconductor layer of the first thin film transistor 108 is different from that of the second thin film transistor 134 .
- the material of the semiconductor layer of the first thin film transistor 108 may include low-temp polysilicon, while the material of the semiconductor layer of the second thin film transistor 134 may include IGZO.
- the material of the semiconductor layer of the first thin film transistor 108 may include amorphous silicon, while the material of the semiconductor layer of the second thin film transistor 134 may include low-temp polysilicon.
- the semiconductor layers 116 and 142 respectively include a channel.
- the width and/or the length of the channel of the semiconductor layer 116 and the channel of the semiconductor layer 142 may be different.
- the width-to-length ratios of the channel of the semiconductor layer 116 and the channel of the semiconductor layer 142 may be different.
- the distance D 1 between the first thin film transistor 108 and the second thin film transistor 134 is in a range from about 0.5 ⁇ m to about 10 ⁇ m. More specifically, the distance D 1 between the first thin film transistor 108 and the second thin film transistor 134 may refer to a minimum distance between two semiconductor layers of the first thin film transistor 108 and the second thin film transistor 134 along a direction that is parallel to the normal of the first substrate 102 . For example, the distance D 1 between the semiconductor layer 116 and the semiconductor layer 142 is in a range of about 0.5 ⁇ m and about 10 ⁇ m. If the distance D 1 between the first thin film transistor 108 and the second thin film transistor 134 is within the range mentioned above, it may decrease the signal interference between the first thin film transistor 108 and the second thin film transistor 134 .
- the shielding layer 126 may overlap with the semiconductor layer 142 of the second thin film transistor 134 . In some examples, the shielding layer 126 may overlap with the channel of the second thin film transistor 134 . The shielding layer 126 may be configured to reduce at least a portion of the light affecting the second thin film transistor 134 , but it is not limited thereto.
- overlap may include partially overlap or entirely overlap in the normal direction of the second substrate 122 . More specifically, the projection of the shielding layer 126 on the second substrate 122 may overlap with the projection of the semiconductor layer of the second thin film transistor 134 on the second substrate 122 .
- the liquid crystal display 100 A may include pads or contacts (not shown) electrically connected to the source 138 and the drain 140 .
- the pads or the contacts may be used to electrically connect the second thin film transistor 134 to other electronic elements (not shown).
- the liquid crystal display 100 A may further include an electrode 146 that electrically connect the second thin film transistor 134 to a sensing unit 148 .
- the material of the pad 144 and the electrode 146 may include metal. Though it is not depicted, two or more second thin film transistors 134 and sensing units 148 may be disposed on the second substrate 122 .
- the number of second thin film transistors 134 and the number of sensing units 148 are not limited in the present disclosure.
- At least one of the plurality of sensing units 148 may be electrically connected to at least one of the plurality of second thin film transistors 134 .
- one sensing units 148 may be electrically connected to two or more second thin film transistors 134 .
- two or more sensing units 148 may be electrically connected to two or more second thin film transistors 134 .
- two or more sensing units 148 may be electrically connected to one second thin film transistors 134 .
- the numbers are not limited in the present disclosure.
- the sensing unit 148 may be used to sense a photonic signal and convert it into an electrical signal, but it is not limited thereto.
- the sensing unit 148 may be a touch sensing unit, a fingerprint sensing unit, a proximity sensing unit, or any other suitable sensing unit.
- FIG. 1 illustrates only one sensing unit 148
- the liquid crystal display 100 A may include more sensing units 148 , and the scope of the disclosure is not intended to be limited.
- the sensing unit 148 may include a photoactive layer disposed between two semiconductor layers. In addition, these two semiconductor layers may be doped with dopants of different types.
- one of the semiconductor layers may include n-type dopants, and another one of the semiconductor layers may include p-type dopants.
- the concentration of the dopants of the photoactive layer may be less than the concentrations of the dopants of the semiconductor layers.
- the sensing unit 148 may be, but is not limited to, a PIN diode.
- the liquid crystal display 100 A may include a liquid crystal layer 150 disposed between the second substrate 122 and the first substrate 102 . Though it is not depicted, a pixel electrode, a common electrode and alignment layers are disposed on the first substrate 102 and/or the second substrate 122 . The alignment of the liquid crystal layer 150 may be controlled.
- the space on the second substrate 122 may be used in a more efficient way. As a result, there are fewer thin film transistors occupying space over the first substrate 102 , thereby reducing the size of the liquid crystal display 100 A.
- FIG. 2 illustrates a cross-sectional view of a liquid crystal display 100 B in accordance with some embodiments of the present disclosure.
- the liquid crystal display 100 B may further include a shielding layer 152 and/or a shielding layer 154 .
- the shielding layer 126 , the shielding layer 152 and/or the shielding layer 154 can shield light with specific wavelength, such as visible light, infrared light (IR) or ultraviolet light (UV).
- the shielding layer 126 , the shielding layer 152 and/or the shielding layer 154 may include metal material for shielding electric field, or include black resin for absorbing light.
- the shielding layer 152 may be disposed between the second thin film transistor 134 and the liquid crystal layer 150 .
- the shielding layer 152 may overlap with the semiconductor layer 142 of the second thin film transistor 134 . Therefore, light may be incident to the sensing unit 148 without being incident to the second thin film transistor 134 , and the second thin film transistor 134 may not be affected by the light.
- the shielding layer 152 may include a material that can absorb IR or can shield electric field.
- the width W 1 of the shielding layer 126 may be greater than the width W 2 of the shielding layer 152 .
- the widths of the shielding layers may be measured along a direction perpendicular to the normal direction of the second substrate 122 in a cross-sectional view.
- the material of the shielding layer 126 may be different from the material of the shielding layer 152 .
- the shielding layer 154 may be disposed on the first thin film transistor 108 .
- the shielding layer 154 may overlap with the semiconductor layer 116 of the first thin film transistor 108 . Therefore, light may be incident to the sensing unit 148 without being incident to the first thin film transistor 108 , and the first thin film transistor 108 would not be affected by the light.
- FIG. 3 illustrates a cross-sectional view of a liquid crystal display 100 C in accordance with some embodiments of the present disclosure.
- the liquid crystal display 100 C may include a shielding layer 126 ′ and a sensing unit 148 ′ replacing the shielding layer 126 and the sensing unit 148 , respectively.
- the sensing unit 148 ′ may extend across two or more first thin film transistors 108 . More specifically, the sensing unit 148 ′ may overlap with the semiconductor layers of two or more first thin film transistors 108 . In addition, the shielding layer 126 ′ may overlap with the sensing unit 148 ′. Namely, the projection of the shielding layer 126 ′ on the second substrate 122 may overlap with the projection of the sensing unit 148 ′ on the second substrate 122 .
- FIG. 4A which illustrates a top view of the liquid crystal display 100 C. It should be appreciated that some elements are omitted in FIG. 4A for clearly presenting the layout of the first thin film transistor 108 . More specifically, line A-A shown in FIG. 4A is a cross-sectional line, which presents a cross-sectional view of FIG. 3 .
- the liquid crystal display 100 C may include a data line 156 and a gate line 158 , which may be substantially perpendicular to the data line 156 .
- the data line 156 may be electrically connected to the source 112 of the first thin film transistor 108 .
- the gate line 158 may be electrically connected to the gate electrode 110 of the first thin film transistor 108 .
- the materials of the data line 156 and the gate line 158 may include metal, such as such as copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt), titanium (Ti).
- metal such as such as copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt), titanium (Ti).
- the data line 156 and the gate line 158 may define a plurality of pixels or sub-pixels of the liquid crystal display 100 C.
- FIG. 4B which illustrates a top view of the liquid crystal display 100 C. It should be appreciated that some elements are omitted in FIG. 4B for clearly presenting the layout of the second thin film transistor 134 , the sensing unit 148 ′ and the shielding layer 126 ′. More specifically, line B-B shown in FIG. 4B is a cross-sectional line, which presents a cross-sectional view of FIG. 3 .
- the liquid crystal display 100 C may include a data line 160 and a gate line 162 .
- the data line 160 may be electrically connected to the source 138 of the second thin film transistor 134 .
- the gate line 162 may be electrically connected to the gate electrode 136 of the second thin film transistor 134 .
- the materials of the data line 160 and the gate line 162 may include metal.
- the shielding layer 126 ′ may define a plurality of openings and allow light to pass through the openings.
- the shielding layer 126 ′ may overlap with the data line 160 and the gate line 162 as well as the data line 156 and the gate line 158 .
- the sensing unit 148 ′ may overlap with two or more first thin film transistors 108 .
- the sensing unit 148 ′ may extend in a direction that is parallel to the extending direction of the gate line 162 . Since the sensing unit 148 ′ has a surface area greater than the surface area of the sensing unit 148 , the sensing unit 148 ′ may receive more light, thereby improving the sensitivity of the liquid crystal display 100 C.
- the sensing unit 148 ′′ may include at least one protruding portion 148 P that extends in a direction substantially parallel to the extending direction of with the data line 160 .
- the shielding layer 126 ′ may overlap with the at least one protruding portion 148 P.
- the sensing unit 148 ′′ has at least one protruding portion 148 P, and the sensing unit 148 ′ would have greater surface area, thereby improving the sensitivity of the liquid crystal display 100 C.
- the liquid crystal display 200 A includes a first substrate 202 .
- the first substrate 202 may be the same as or similar to the first substrate 102 .
- the liquid crystal display 200 A may include a buffer layer 204 and a gate dielectric layer 206 that may be the same as or similar to the buffer layer 104 and the gate dielectric layer 106 , respectively.
- the liquid crystal display 200 A may include a first thin film transistor 208 .
- the first thin film transistor 208 may include a gate electrode 210 , a source 212 , a drain 214 and a semiconductor layer 216 that may be the same as or similar to the gate electrode 110 , the source 112 , the drain 114 and the semiconductor layer 116 , respectively.
- the semiconductor layer may include a doped region and an un-doped region.
- two or more first thin film transistors 208 may be disposed on the first substrate 202 , and the number of first thin film transistors 208 is not limited in the present disclosure.
- the liquid crystal display 200 A may include a dielectric layer 218 and a passivation layer 220 .
- the material of the dielectric layer 218 and the passivation layer 220 may include dielectric materials such as PSG, BPSG, FSG, silicon oxide, silicon nitride, amorphous fluorinated carbon, parylene, BCB, polyimides, or other suitable materials.
- the liquid crystal display 200 A may include a color filter layer 226 a and a color filter layer 226 b disposed on the passivation layer 220 .
- the color filter layer 226 a and the color filter layer 226 b may allow light with specific wavelength to pass through.
- the color filter layer 226 a and the color filter layer 226 b may include, but are not limited to, a red color filter layer, a green color filter layer, a blue color filter layer or an IR color filter layer.
- the liquid crystal display 200 A may include a planarization layer 230 .
- the material of the planarization layer 230 may be the same as or similar to that of the passivation layer 220 .
- the liquid crystal display 200 A may include a curved liquid crystal display or a flexible liquid crystal display.
- the color filter layer 226 a and the color filter layer 226 b disposed on the first substrate 202 may reduce the light leakage caused by bending the liquid crystal display.
- the liquid crystal display 200 A may include a pixel electrode 232 , a dielectric layer 234 and a common electrode 236 .
- the pixel electrode 232 is disposed on the planarization layer 230
- the common electrode 236 is disposed on the dielectric layer 234 .
- the pixel electrode 232 may be disposed on the common electrode 236 , or the pixel electrode 232 and the common electrode 236 may be disposed on the same layer, but the present disclosure is not limited thereto.
- the voltage difference between the pixel electrode 232 and the common electrode 236 may be controlled by the first thin film transistor 208 through a conductive through hole 238 .
- the conductive through hole 238 may penetrate the planarization layer 230 and the color filter layer 226 b .
- FIG. 5 illustrates that the common electrode 236 is patterned, and the common electrode 236 would have discrete portions. Many variations and/or modifications can be made to embodiments of the disclosure. In some embodiments, the common electrode 236 is not patterned.
- the material of the pixel electrode 232 , the common electrode 236 and the conductive through hole 238 may include a metal, a transparent conductive material (e.g. indium tin oxide), or a combination thereof.
- the liquid crystal display 200 A may include an alignment layer 240 .
- the alignment layer 240 may be used to control the alignment of the liquid crystal layer 242 .
- the material of the alignment layer 240 may include, but is not limited to, polyimide (PI).
- the liquid crystal display 200 A may include a spacer 244 disposed between the first substrate 202 and a second substrate 246 .
- the material of the spacer 244 may include, but is not limited to, polyethylene terephthalate (PET), polyethylene (PE), polyethersulfone (PES), polycarbonate (PC), polymethylmethacrylate (PMMA), glass, any other suitable materials, or a combination thereof.
- the liquid crystal display 200 A may include the second substrate 246 that may be the same as or similar to the second substrate 122 .
- the liquid crystal display 200 A may include a gate dielectric layer 248 that may be the same as or similar to the gate dielectric layer 128 .
- the liquid crystal display 200 A may include a second thin film transistor 250 .
- the second thin film transistor 250 may include a gate electrode 252 a , a gate electrode 252 b , a source 254 , a drain 256 and a semiconductor layer 258 .
- the second thin film transistor 250 include a double gate thin film transistor that has two gate electrodes disposed on two opposite sides of the semiconductor layer of the second thin film transistor 250 .
- the second thin film transistor 250 may include a top gate thin film transistor, a bottom gate thin film transistor, or a dual gate thin film transistor.
- the gate electrode 252 b may be optionally formed.
- the source 254 , the drain 256 and the semiconductor layer 258 may be the same as or similar to the source 138 , the drain 140 and the semiconductor layer 142 , respectively.
- the material(s) of the source 254 and the drain 256 may include metal.
- the liquid crystal display 200 A may include a sensing unit 264 that may be the same as or similar to the sensing unit 148 .
- the second thin film transistor 250 is electrically connected to the sensing unit 264 . Though it is not depicted, two or more second thin film transistors 250 and sensing units 264 may be disposed on the second substrate 246 .
- the number of second thin film transistors 250 and the number of sensing units 264 are not limited in the present disclosure.
- the liquid crystal display 200 A further includes a dielectric layer 266 , a dielectric layer 268 .
- the materials of the dielectric layer 266 and the dielectric layer 268 may include the dielectric materials mentioned above.
- the liquid crystal display 200 A may include an orientation layer 270 . As shown in FIG. 5 , the alignment layer 240 and the alignment layer 270 may be disposed on two opposite sides of the liquid crystal layer 242 and configured to control the alignment of the liquid crystal layer 242 .
- the material of the alignment layer 270 may include, but is not limited to, polyimide.
- the liquid crystal display 200 A may include a liquid-emitting region 200 LR that may be defined as, but is not limited to, a region overlapping with the pixel electrode 232 .
- the gate electrode 252 a may be used as a shielding layer, and light affecting the semiconductor of the second thin film transistor 250 may be reduce.
- the color filter layers may be disposed on the first substrate 202 but not on the second substrate 246 . Since some of the thin film transistors, such as the second thin film transistors 250 , are disposed on the second substrate 246 , there is an additional space that could be used to dispose the color filter layers. Therefore, the space on the first substrate 202 may be used in a more efficient way.
- the color filter layers disposed on the first substrate 202 may reduce the color shift caused by the mis-alignment between the pixels and the color filter layers.
- FIG. 6 illustrates a cross-sectional view of a liquid crystal display 200 B in accordance with some embodiments of the present disclosure.
- the liquid crystal display 200 B may further include buffer layers 272 and 274 disposed on the second substrate 246 .
- the buffer layers 272 and 274 may be the same as or similar to the buffer layer 142 .
- the liquid crystal display 200 B may include a shielding layer 276 , a shielding layer 278 and a shielding layer 280 .
- the shielding layer 276 , the shielding layer 278 and/or the shielding layer 280 can shield a portion of light including visible light or light with specific wavelength, such as infrared light (IR) or ultraviolet light (UV).
- the shielding layer 276 , the shielding layer 278 and/or the shielding layer 280 include a metal material for shielding electric field.
- the liquid crystal display 200 B may include the second thin film transistor 250 with a single gate electrode, such as a gate electrode 252 .
- the shielding layer 276 , the shielding layer 278 and/or the shielding layer 280 include conductive material such as metal, the shielding layer 276 , the shielding layer 278 and/or the shielding layer 280 may not be in contact with other conductive and/or semi-conductive components, such as the conductive through hole 238 .
- the shielding layer 276 may be disposed between the second substrate 246 and the second thin film transistor 250 . As shown in FIG. 6 , the shielding layer 276 overlaps with the semiconductor layer 258 of the second thin film transistor 250 .
- the shielding layer 278 may be disposed between the second thin film transistor 250 and the liquid crystal layer 242 . In some embodiments, the shielding layer 278 overlaps with the semiconductor layer 258 of the second thin film transistor 250 .
- the shielding layer 280 may be disposed between the first thin film transistor 208 and the liquid crystal layer 242 . In some embodiments, the shielding layer 280 overlaps with the semiconductor layer 216 of the first thin film transistor 208 . Moreover, at least a portion of the shielding layer 280 may be disposed between the color filter layer 226 a and the color filter layer 226 b.
- the light beam LB from a light source may be incident to the sensing unit 264 while reducing the possibility of affecting the first thin film transistor 208 and the second thin film transistor 250 .
- at least one of the shielding layer 276 , the shielding layer 278 and the shielding layer 280 may be optionally formed according to the requirement of design.
- the shielding layer 278 and the shielding layer 280 may not be formed in some embodiments.
- the materials of the shielding layer 276 , the shielding layer 278 and/or the shielding layer 280 may be different.
- the shielding layer 280 may include metal material to reflect the light from the light source.
- the shielding layer 276 and/or the shielding layer 278 may include a light-absorbing material to decrease the reflectance of the second thin film transistor 250 .
- FIG. 7 illustrates a cross-sectional view of a liquid crystal display 200 C in accordance with some embodiments of the present disclosure.
- the liquid crystal display 200 C may include a shielding layer 282 .
- the shielding layer 282 may not overlap with the semiconductor layer 258 of the second thin film transistor 250 .
- the shielding layer 282 may include an extending portion of the source 254 . That is, the source 254 may include an extending portion disposed on the 268 as a shielding layer. Because of the shielding layer 282 and the spacer 244 , light from a light source may be incident to the sensing unit 264 while reducing the possibility of affecting the second thin film transistor 250 .
- the liquid crystal display 300 includes a first substrate 302 .
- the first substrate 302 may be the same as or similar to the first substrate 102 .
- the liquid crystal display 300 may include a backlight module 304 .
- the backlight module 304 may include at least one light source.
- the backlight module 304 may include a plurality of light-emitting diodes (LED), organic light-emitting diodes (OLED).
- the light-emitting diodes may be a micro LED or a mini LED.
- the backlight module 304 may include, but is not limited to, direct type backlight module or edge-lit type backlight module.
- Some additional layers may be disposed between the first substrate 302 and the backlight module 304 , such as a polarizer, but it is not limited thereto.
- the liquid crystal display 300 may include a buffer layer 306 and a gate dielectric layer 308 that may be the same as or similar to the buffer layer 104 and the gate dielectric layer 106 , respectively.
- the liquid crystal display 300 may include a first thin film transistor 310 .
- the first thin film transistor 310 may include a gate electrode 312 , a source 314 , a drain 316 and a semiconductor layer 318 that may be the same as or similar to the gate electrode 110 , the source 112 , the drain 114 and the semiconductor layer 116 , respectively. Though it is not depicted, two or more first thin film transistors 310 may be disposed on the first substrate 302 , and the number of first thin film transistors 310 is not limited in the present disclosure.
- the liquid crystal display 300 may include a dielectric layer 322 .
- the material of the dielectric layer 322 may include the dielectric material(s) mentioned above.
- the liquid crystal display 300 may include a shielding layer 324 on the dielectric layer 322 .
- the shielding layer 324 may be the same as or similar to the shielding layer 154 .
- the liquid crystal display 300 may include a color filter layer 326 a and a color filter layer 326 b disposed on the dielectric layer 322 .
- FIG. 8 illustrates the color filter layer 326 a and the color filter layer 326 b are separated from each other.
- the color filter layer 326 a and the color filter layer 326 b may be partially overlapped.
- the color filter layer 326 a and the color filter layer 326 b may allow light with specific wavelength to pass through.
- the color filter layer 326 a and the color filter layer 326 b may include, but are not limited to, a red color filter, a green color filter, a blue color filter or an IR color filter.
- the liquid crystal display 300 may include a conductive through hole 328 .
- the conductive through hole 328 may penetrate the color filter layer 326 b and the dielectric layer 322 .
- the conductive through hole 328 may include conductive material, such as metal or transparent conductive material (e.g. indium tin oxide).
- the conductive through hole 328 may be electrically connected to the first thin film transistor 310 .
- the liquid crystal display 300 may include a planarization layer 332 .
- the material of the planarization layer 332 may be the same as or similar to that of the dielectric layer 322 .
- the liquid crystal display 300 may include a pixel electrode 330 and a common electrode 336 .
- the pixel electrode 330 may be disposed on the color filter layer 326 b
- the common electrode 336 may be disposed on the planarization layer 332 .
- the pixel electrode 330 may be disposed on the common electrode 336 , or the pixel electrode 330 and the common electrode 336 may be disposed on the same layer, but the present disclosure is not limited thereto.
- the voltage difference between the pixel electrode 330 and the common electrode 336 may be controlled by the first thin film transistor 310 through the conductive through hole 328 .
- the liquid crystal display 300 may include an alignment layer 334 .
- the alignment layer 334 may include, but is not limited to, polyimide.
- the liquid crystal display 300 may include a spacer 339 disposed between the first substrate 302 and a second substrate 340 .
- the material of the spacer 339 may be the same as or similar to that of the spacer 244 .
- the liquid crystal display 300 may include the second substrate 340 that may be the same as or similar to the second substrate 122 .
- the liquid crystal display 300 may include a buffer layer 342 , a buffer layer 344 and a dielectric layer 346 that may be the same as or similar to the buffer layer 272 , the buffer layer 274 and the dielectric layer 266 , respectively.
- the liquid crystal display 300 may include a shielding layer 348 that may be the same as or similar to the shielding layer 126 .
- the liquid crystal display 300 may include a second thin film transistor 350 .
- the second thin film transistor 350 may include a gate electrode 352 , a source 354 , a drain 356 and a semiconductor layer 358 that may be the same as or similar to the gate electrode 136 , the source 138 , the drain 140 and the semiconductor layer 142 , respectively.
- the material(s) of the source 354 and the drain 356 may include metal.
- the liquid crystal display 300 may include a sensing unit 364 that may be the same as or similar to the sensing unit 148 . As shown in FIG. 8 , the second thin film transistor 350 is electrically connected to the sensing unit 364 through the electrode 362 . Though it is not depicted, two or more second thin film transistors 350 and sensing units 364 may be disposed on the second substrate 340 , and the number of second thin film transistor 350 and/or sensing units 364 is not limited in the present disclosure. In some examples, a buffer layer (not shown) or a planarization layer (not shown) may be disposed between the sensing unit 364 and an alignment layer 368 , but it is not limited thereto.
- the liquid crystal display 300 may include a dielectric layer 366 .
- the liquid crystal display 300 may include the alignment layer 368 . As shown in FIG. 8 , the alignment layer 334 and the alignment layer 368 are disposed on two opposite sides of the liquid crystal layer 338 .
- the alignment layer 368 may include, but is not limited to, polyimide.
- the liquid crystal display 300 may include a sealant 370 , which may be disposed in the peripheral region of the liquid crystal display 300 .
- the distance D 2 between the first thin film transistor 310 and the color filter layer (e.g. the color filter layer 326 b ) overlapping with the first thin film transistor 310 along the normal direction of the first substrate 302 is less than the distance D 3 between the second thin film transistor 350 and the color filter layer (e.g. the color filter layer 326 b ) overlapping with the second thin film transistor 350 along the normal direction of the first substrate 302 .
- the minimum distance between the semiconductor layer 318 of the first thin film transistor 310 and the color filter layer along the normal direction of the first substrate 302 is less than the minimum distance between the semiconductor layer 358 of the second thin film transistor 350 and the color filter layer along the normal direction of the first substrate 302 .
- FIGS. 9A-9E which illustrate cross-sectional views of different stages of a process for manufacturing a liquid crystal display 400 A in accordance with some embodiments of the present disclosure.
- the same or similar elements or layers corresponding to those of the liquid crystal display are denoted by like reference numerals.
- the same or similar elements or layers denoted by like reference numerals have the same meaning and will not be repeated for the sake of brevity.
- the first substrate 102 is provided.
- the first thin film transistor 108 may be formed on the first substrate 102 as shown in FIG. 9B .
- the buffer layer 104 , the gate dielectric layer 106 , and the dielectric layer 120 may also be formed on the first substrate 102 .
- the second substrate 122 is provided as shown in FIG. 9C .
- the second thin film transistor 134 and the sensing unit 148 are formed on the second substrate 122 in accordance with some embodiments.
- FIG. 9E the first substrate 102 and the second substrate 122 are combined, and the liquid crystal layer 150 is formed between the first substrate 102 and the second substrate 122 .
- manufacturing the liquid crystal display 400 A may include forming other elements.
- some shielding layers may be formed on the first substrate 102 and/or on the second substrate 122 .
- Some color filter layers may be formed on the first substrate 102 or the second substrate 122 .
- the stages of FIGS. 9A and 9B may be performed before, after, or during the stages of FIGS. 9C and 9D .
- FIGS. 10A-10E which illustrate cross-sectional views of different stages of a process for manufacturing a liquid crystal display 400 B in accordance with some embodiments of the present disclosure.
- the first substrate 102 is provided, and a first flexible substrate 170 may be attached to or formed on the first substrate 102 .
- the first thin film transistor 108 may be formed on the first flexible substrate 170 as shown in FIG. 10B .
- the buffer layer 104 , the gate dielectric layer 106 , and the dielectric layer 120 may also be formed on the first flexible substrate 170 .
- the first flexible substrate 170 is disposed between the first substrate 102 and the first thin film transistor 108 .
- the second substrate 122 is provided, and a second flexible substrate 180 may be attached to or formed on the second substrate 122 as shown in FIG. 10C . In some embodiments, as shown in FIG.
- the second thin film transistor 134 and the sensing unit 148 are formed on the second flexible substrate 180 in accordance with some embodiments.
- the second flexible substrate 180 is disposed between the second substrate 122 and the second thin film transistor 134 .
- the first substrate 102 and the second substrate 122 are combined, and the liquid crystal layer 150 is formed between the first substrate 102 and the second substrate 122 .
- the first flexible substrate 170 and the second flexible substrate 180 are formed between the first substrate 102 and the second substrate 122 .
- manufacturing the liquid crystal display 400 B may include forming other elements.
- some shielding layers may be formed on the first substrate 102 and/or on the second substrate 122 .
- Some color filter layers may be formed on the first substrate 102 or the second substrate 122 .
- the stages of FIGS. 10A and 10B may be performed before, after, or during the stages of FIGS. 10C and 10D .
- FIGS. 11A-11E which illustrate cross-sectional views of different stages of a process for manufacturing a liquid crystal display 400 C in accordance with some embodiments of the present disclosure.
- the first substrate 102 is provided.
- the first thin film transistor 108 ′ may be formed on the first substrate 102 as shown in FIG. 10B .
- the buffer layer 104 , the gate dielectric layer 106 , and the dielectric layer 120 may also be formed on the first substrate 102 .
- the first flexible substrate 170 is formed on the first thin film transistor 108 ′, and the first thin film transistor 108 ′ would be disposed between the first substrate 102 and the first flexible substrate 170 .
- the difference between the first thin film transistor 108 ′ and the first thin film transistor 108 is the position of the gate electrode 110 .
- the first thin film transistor 108 ′ and the first thin film transistor 108 may be the same type of thin film transistor.
- the first thin film transistor 108 ′ and the first thin film transistor 108 both are top gate thin film transistors or bottom gate thin film transistors, but it is not limited thereto.
- the first thin film transistor 108 and the first thin film transistor 108 ′ may perform the same function.
- the second substrate 122 is provided as shown in FIG. 11C .
- the second thin film transistor 134 ′ and the sensing unit 148 are formed on the second substrate 122 .
- the second flexible substrate 180 is formed on the second thin film transistor 134 ′.
- the second thin film transistor 134 ′ may be disposed between the second substrate 122 and the second flexible substrate 180 .
- the difference between the second thin film transistor 134 ′ and the second thin film transistor 134 is the position of the gate electrode 136 .
- the second thin film transistor 134 and the second thin film transistor 134 ′ may perform the same function.
- the second thin film transistor 134 ′ and the second thin film transistor 134 may be the same type of thin film transistor.
- the second thin film transistor 134 ′ and the second thin film transistor 134 both are top gate thin film transistors or bottom gate thin film transistors, but it is not limited thereto.
- the stages of FIGS. 11A and 11B may be performed before, after, or during the stages of FIGS. 11C and 11D .
- the first flexible substrate 170 and the second flexible substrate 180 are combined, and the first substrate 102 and the second substrate 122 may be removed.
- the first thin film transistor 108 ′ and the second thin film transistor 134 ′ are formed between the first flexible substrate 170 and the second flexible substrate 180 .
- the liquid crystal display 500 may include a flexible liquid crystal display, a touch liquid crystal display, a curved liquid crystal display, a tiled display or other suitable displays.
- the liquid crystal display 500 is a curved liquid crystal display.
- the alignment of some of the components (e.g. the color filter layer or the shielding layer) of the liquid crystal display 500 may be shifted. Therefore, some of the components (e.g. the color filter layer and/or the shielding layer (not shown)) disposed on the second substrate 122 originally may be moved to be disposed on the first substrate 102 to reduce the shift.
- the space of the second substrate 122 may be sufficient to dispose sensing unit 148 ′ and the second thin film transistor 134 .
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Abstract
Description
- The present disclosure relates to a liquid crystal display, and in particular to a liquid crystal display that includes a counter substrate with thin film transistors thereon.
- Liquid crystal displays that include a display panel, such as smartphones, tablets, notebooks, monitors, and TVs, have become indispensable necessities in modern society. With the flourishing development of such portable electronic products, consumers have high expectations regarding the quality, functionality, and price of such products. These electronic products are often provided with communications capabilities. Specifically, a liquid crystal display can control the rotation direction of the liquid crystal molecules for displaying.
- However, some difficulties may be encountered through the use of liquid crystal displays. Accordingly, a new liquid crystal display that improves display quality is needed.
- In accordance with some embodiments of the present disclosure, a liquid crystal display is provided. The liquid crystal display includes a first substrate. The liquid crystal display also includes a plurality of first thin film transistors disposed on the first substrate. The liquid crystal display further includes a second substrate disposed opposite the first substrate. In addition, the liquid crystal display includes a plurality of second thin film transistors disposed on the second substrate. The liquid crystal display also includes a plurality of sensing units disposed on the second substrate, and at least one of the plurality of sensing units electrically connected to at least one of the plurality of second thin film transistors. The liquid crystal display further includes a liquid crystal layer disposed between the first substrate and the second substrate.
- In accordance with some embodiments of the present disclosure, a method for manufacturing a liquid crystal display is provided. The method includes providing a first substrate. The method also includes forming a plurality of first thin film transistors on the first substrate. The method further includes providing a second substrate. In addition, the method includes forming a plurality of second thin film transistors on the second substrate. The method also includes forming a plurality of sensing units on the second substrate, and at least one of the plurality of sensing units electrically connected to at least one of the plurality of second thin film transistors. The method further includes combining the first substrate and the second substrate through a liquid crystal layer.
- A detailed description is given in the following embodiments with reference to the accompanying drawings.
- The disclosure may be understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein:
-
FIG. 1 illustrates a cross-sectional view of the liquid crystal display in accordance with some embodiments of the present disclosure. -
FIG. 2 illustrates a cross-sectional view of the liquid crystal display in accordance with some embodiments of the present disclosure. -
FIG. 3 illustrates a cross-sectional view of the liquid crystal display in accordance with some embodiments of the present disclosure. -
FIGS. 4A-4C illustrate top views of the liquid crystal display shown inFIG. 3 . -
FIG. 5 illustrates a cross-sectional view of the liquid crystal display in accordance with some embodiments of the present disclosure. -
FIG. 6 illustrates a cross-sectional view of the liquid crystal display in accordance with some embodiments of the present disclosure. -
FIG. 7 illustrates a cross-sectional view of the liquid crystal display in accordance with some embodiments of the present disclosure. -
FIG. 8 illustrates a cross-sectional view of the liquid crystal display in accordance with some embodiments of the present disclosure. -
FIGS. 9A-9E illustrate cross-sectional views of different stages of a process for manufacturing the liquid crystal display in accordance with some embodiments of the present disclosure. -
FIGS. 10A-10E illustrate cross-sectional views of different stages of a process for manufacturing the liquid crystal display in accordance with some embodiments of the present disclosure. -
FIGS. 11A-11E illustrate cross-sectional views of different stages of a process for manufacturing the liquid crystal display in accordance with some embodiments of the present disclosure. -
FIG. 12 illustrates a cross-sectional view of the liquid crystal display in accordance with some embodiments of the present disclosure. - The liquid crystal display of the present disclosure and the manufacturing method thereof are described in detail in the following description. In the following detailed description, for purposes of explanation, numerous specific details and embodiments are set forth in order to provide a thorough understanding of the present disclosure. It will be apparent, however, that the exemplary embodiments set forth herein are used merely for the purpose of illustration, and the inventive concept may be embodied in various forms without being limited to those exemplary embodiments. In addition, the drawings of different embodiments may use like and/or corresponding numerals to denote like and/or corresponding elements. However, the use of like and/or corresponding numerals in the drawings of different embodiments does not suggest any correlation between different embodiments. In addition, in this specification, expressions such as “first material layer disposed above/on/over a second material layer”, may indicate the direct contact of the first material layer and the second material layer, or it may indicate a non-contact state with one or more intermediate layers between the first material layer and the second material layer. In the above situation, the first material layer may not be in direct contact with the second material layer.
- In addition, in this specification, relative expressions are used. For example, “upper” or “lower” is used to describe the position of one element relative to another. It should be appreciated that if a device is flipped upside down, an element that is on the “bottom” will become an element that is on the “top”.
- It should be understood that, although the terms first, second, third etc. may be used herein to describe various elements, components, regions, layers, portions and/or sections, these elements, components, regions, layers, portions and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, portion or section from another element, component, region, layer or section. Thus, a first element, component, region, layer, portion or section discussed below could be termed a second element, component, region, layer, portion or section without departing from the teachings of the present disclosure.
- It should be understood that this description of the exemplary embodiments is intended to be read in connection with the accompanying drawings, which are to be considered part of the entire written description. The drawings are not drawn to scale. In addition, structures and devices are shown schematically in order to simplify the drawing. In the drawings, some components may be omitted for clarity. Moreover, some components in the drawings may be eliminated as another embodiment of the present disclosure.
- The terms “about” and “substantially” typically mean +/−20% of the stated value, more typically +/−10% of the stated value, more typically +/−5% of the stated value, more typically +/−3% of the stated value, more typically +/−2% of the stated value, more typically +/−1% of the stated value and even more typically +/−0.5% of the stated value. The stated value of the present disclosure is an approximate value. When there is no specific description, the stated value includes the meaning of “about” or “substantially”. Moreover, when considering the deviation or the fluctuation of the manufacturing process, the term “same” may also include the meaning of “about” or “substantially”.
- Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It should be appreciated that, in each case, the term, which is defined in a commonly used dictionary, should be interpreted as having a meaning that conforms to the relative skills of the present disclosure and the background or the context of the present disclosure, and should not be interpreted in an idealized or overly formal manner unless so defined.
- In addition, in some embodiments of the present disclosure, terms concerning attachments, coupling and the like, such as “connected” and “interconnected,” refer to a relationship wherein structures are secured or attached to one another either directly or indirectly through intervening structures, as well as both movable or rigid attachments or relationships, unless expressly described otherwise.
- In addition, the phrase “in a range from a first value to a second value” indicates the range includes the first value, the second value, and other values in between.
- In addition, the term “cover” includes the meaning of “cover partially” or “cover completely”.
- Refer to
FIG. 1 , which illustrates a cross-sectional view of aliquid crystal display 100A in accordance with some embodiments of the present disclosure. Theliquid crystal display 100A may include afirst substrate 102. Thefirst substrate 102 may include a glass substrate, a ceramic substrate, a polymer substrate, other suitable substrates, or a combination thereof. Abuffer layer 104 may be disposed on thefirst substrate 102. Thebuffer layer 104 may include multiple layers with different materials. Agate dielectric layer 106 may be disposed on thebuffer layer 104. The material of thegate dielectric layer 106 may include, but is not limited to, silicon oxide (SiOx), silicon nitride (SiNy), high dielectric constant (high-k) dielectric material or other suitable dielectric materials. - As shown in
FIG. 1 , theliquid crystal display 100A may include a plurality of firstthin film transistors 108. The firstthin film transistor 108 may include agate electrode 110, asource 112, adrain 114 and asemiconductor layer 116. Thegate electrode 110 may be disposed on thebuffer layer 104. In some examples, the thin film transistors in the present disclosure may include a top gate thin film transistor, a bottom gate thin film transistor, a dual gate thin film transistor, a double gate thin film transistor, other suitable transistors, or a combination thereof. - The material of the
gate electrode 110 may include metal, such as copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt), titanium (Ti). - The
source 112, thedrain 114 and thesemiconductor layer 116 may be disposed on thegate dielectric layer 106. In some embodiments, the material of thesemiconductor layer 116 of the firstthin film transistor 108 may include, but is not limited to, amorphous silicon, polysilicon such as low-temp polysilicon (LTPS), metal oxide or other suitable materials. The metal oxide may include indium gallium zinc oxide (IGZO), indium zinc oxide (IZO), indium gallium zinc tin oxide (IGZTO), low temperature polycrystalline oxide (LTPO), other suitable materials, or a combination thereof. In some embodiments, the material of thesource 112 and thedrain 114 may include metal, such as copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt), titanium (Ti). - As shown in
FIG. 1 , the liquid crystal display 100 may include pads or contacts (not shown) that are electrically connected to thesource 112 and/or thedrain 114. The pads or the contacts may be used to electrically connect the firstthin film transistor 108 to other electronic elements (not shown). The liquid crystal display 100 may include adielectric layer 120 disposed on thegate dielectric layer 106. The material of thedielectric layer 120 may include phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), low dielectric constant (low-k) material and/or other suitable material(s). The low dielectric constant dielectric materials may include, but are not limited to, fluorinated silica glass (FSG), silicon oxide, silicon nitride, amorphous fluorinated carbon, parylene, bis-benzocyclobutenes (BCB), polyimides, or other suitable materials. Though it is not depicted, some metal wires or through holes may be formed in thedielectric layer 120. - As shown in
FIG. 1 , the liquid crystal display 100 may include asecond substrate 122 that is disposed opposite to thefirst substrate 102. Thesecond substrate 122 may include a glass substrate, a ceramic substrate, a polymer substrate, other suitable substrates, or a combination thereof. Abuffer layer 124 may be disposed on thesecond substrate 122. Thebuffer layer 124 may include multiple layers with different materials. Ashielding layer 126 may be disposed on thesecond substrate 122 and/or in thebuffer layer 124. In some embodiments, theshielding layer 126 may be a light shielding layer that allows specific wavelength of light or a portion of light to pass through. It should be appreciated that althoughFIG. 1 illustrates thegate electrode 136 is in directly contact with theshielding layer 126, some additional layers may be disposed between thegate electrode 136 and theshielding layer 126. - A
gate dielectric layer 128 is disposed on thebuffer layer 124. The material of thegate dielectric layer 128 may be the same as or similar to thegate dielectric layer 106, and thus it is not repeated herein. Adielectric layer 130 and adielectric layer 132 may be disposed on thegate dielectric layer 128. Thedielectric layers dielectric layer 130 and/ordielectric layer 132. - As shown in
FIG. 1 , theliquid crystal display 100A may include a secondthin film transistor 134. It should be appreciated thatFIG. 1 illustrates only one secondthin film transistor 134. However, theliquid crystal display 100A may include more secondthin film transistors 134 in other cross sections. The secondthin film transistor 134 may include agate electrode 136, asource 138, adrain 140 and asemiconductor layer 142. The material of thegate electrode 136 may include metal, such as copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt), titanium (Ti). - The
source 138, thedrain 140 and thesemiconductor layer 142 may be disposed on thegate dielectric layer 128. In some embodiments, the material of thesemiconductor layer 142 of the secondthin film transistor 134 may include, but is not limited to, amorphous silicon, polysilicon such as low-temp polysilicon (LTPS), metal oxide or other suitable materials. The metal oxide may include indium gallium zinc oxide (IGZO), indium zinc oxide (IZO), indium gallium zinc tin oxide (IGZTO), low temperature polycrystalline oxide (LTPO), other suitable materials, or a combination thereof. In some embodiments, the material of thesource 138 and thedrain 140 may include metal. - In the embodiment where the semiconductor layer is the indium gallium zinc oxide (IGZO) layer, the semiconductor layer may include different compositions of In, Ga, and Zn, such as 1:1:1:4 or other suitable composition(s). In some embodiments, the material of the semiconductor layer of the first
thin film transistor 108 is different from that of the secondthin film transistor 134. For example, the material of the semiconductor layer of the firstthin film transistor 108 may include low-temp polysilicon, while the material of the semiconductor layer of the secondthin film transistor 134 may include IGZO. In other examples, the material of the semiconductor layer of the firstthin film transistor 108 may include amorphous silicon, while the material of the semiconductor layer of the secondthin film transistor 134 may include low-temp polysilicon. - In some embodiments, the semiconductor layers 116 and 142 respectively include a channel. The width and/or the length of the channel of the
semiconductor layer 116 and the channel of thesemiconductor layer 142 may be different. In some embodiments, the width-to-length ratios of the channel of thesemiconductor layer 116 and the channel of thesemiconductor layer 142 may be different. - In some embodiments, the distance D1 between the first
thin film transistor 108 and the secondthin film transistor 134 is in a range from about 0.5 μm to about 10 μm. More specifically, the distance D1 between the firstthin film transistor 108 and the secondthin film transistor 134 may refer to a minimum distance between two semiconductor layers of the firstthin film transistor 108 and the secondthin film transistor 134 along a direction that is parallel to the normal of thefirst substrate 102. For example, the distance D1 between thesemiconductor layer 116 and thesemiconductor layer 142 is in a range of about 0.5 μm and about 10 μm. If the distance D1 between the firstthin film transistor 108 and the secondthin film transistor 134 is within the range mentioned above, it may decrease the signal interference between the firstthin film transistor 108 and the secondthin film transistor 134. - In some embodiments, the
shielding layer 126 may overlap with thesemiconductor layer 142 of the secondthin film transistor 134. In some examples, theshielding layer 126 may overlap with the channel of the secondthin film transistor 134. Theshielding layer 126 may be configured to reduce at least a portion of the light affecting the secondthin film transistor 134, but it is not limited thereto. The term “overlap” may include partially overlap or entirely overlap in the normal direction of thesecond substrate 122. More specifically, the projection of theshielding layer 126 on thesecond substrate 122 may overlap with the projection of the semiconductor layer of the secondthin film transistor 134 on thesecond substrate 122. - As shown in
FIG. 1 , theliquid crystal display 100A may include pads or contacts (not shown) electrically connected to thesource 138 and thedrain 140. The pads or the contacts may be used to electrically connect the secondthin film transistor 134 to other electronic elements (not shown). Theliquid crystal display 100A may further include anelectrode 146 that electrically connect the secondthin film transistor 134 to asensing unit 148. The material of the pad 144 and theelectrode 146 may include metal. Though it is not depicted, two or more secondthin film transistors 134 andsensing units 148 may be disposed on thesecond substrate 122. The number of secondthin film transistors 134 and the number ofsensing units 148 are not limited in the present disclosure. In some embodiments, at least one of the plurality of sensingunits 148 may be electrically connected to at least one of the plurality of secondthin film transistors 134. In one example, onesensing units 148 may be electrically connected to two or more secondthin film transistors 134. In other examples, two ormore sensing units 148 may be electrically connected to two or more secondthin film transistors 134. In another example, two ormore sensing units 148 may be electrically connected to one secondthin film transistors 134. The numbers are not limited in the present disclosure. - The
sensing unit 148 may be used to sense a photonic signal and convert it into an electrical signal, but it is not limited thereto. In some examples, thesensing unit 148 may be a touch sensing unit, a fingerprint sensing unit, a proximity sensing unit, or any other suitable sensing unit. AlthoughFIG. 1 illustrates only onesensing unit 148, theliquid crystal display 100A may includemore sensing units 148, and the scope of the disclosure is not intended to be limited. In some embodiments, thesensing unit 148 may include a photoactive layer disposed between two semiconductor layers. In addition, these two semiconductor layers may be doped with dopants of different types. For example, one of the semiconductor layers may include n-type dopants, and another one of the semiconductor layers may include p-type dopants. In some embodiments, the concentration of the dopants of the photoactive layer may be less than the concentrations of the dopants of the semiconductor layers. In some embodiments, thesensing unit 148 may be, but is not limited to, a PIN diode. - As shown in
FIG. 1 , theliquid crystal display 100A may include aliquid crystal layer 150 disposed between thesecond substrate 122 and thefirst substrate 102. Though it is not depicted, a pixel electrode, a common electrode and alignment layers are disposed on thefirst substrate 102 and/or thesecond substrate 122. The alignment of theliquid crystal layer 150 may be controlled. - Since some thin film transistors, such as the second
thin film transistors 134, are disposed on thesecond substrate 122, the space on thesecond substrate 122 may be used in a more efficient way. As a result, there are fewer thin film transistors occupying space over thefirst substrate 102, thereby reducing the size of theliquid crystal display 100A. - Many variations and/or modifications can be made to embodiments of the disclosure. Refer to
FIG. 2 , which illustrates a cross-sectional view of aliquid crystal display 100B in accordance with some embodiments of the present disclosure. In some embodiments, one of the differences between theliquid crystal display 100A and theliquid crystal display 100B is that theliquid crystal display 100B may further include ashielding layer 152 and/or ashielding layer 154. It should be appreciated that theshielding layer 126, theshielding layer 152 and/or theshielding layer 154 can shield light with specific wavelength, such as visible light, infrared light (IR) or ultraviolet light (UV). In another example, theshielding layer 126, theshielding layer 152 and/or theshielding layer 154 may include metal material for shielding electric field, or include black resin for absorbing light. - As shown in
FIG. 2 , theshielding layer 152 may be disposed between the secondthin film transistor 134 and theliquid crystal layer 150. In some embodiments, theshielding layer 152 may overlap with thesemiconductor layer 142 of the secondthin film transistor 134. Therefore, light may be incident to thesensing unit 148 without being incident to the secondthin film transistor 134, and the secondthin film transistor 134 may not be affected by the light. In some embodiments, theshielding layer 152 may include a material that can absorb IR or can shield electric field. In some embodiments, the width W1 of theshielding layer 126 may be greater than the width W2 of theshielding layer 152. The widths of the shielding layers may be measured along a direction perpendicular to the normal direction of thesecond substrate 122 in a cross-sectional view. In some embodiments, the material of theshielding layer 126 may be different from the material of theshielding layer 152. - As shown in
FIG. 2 , theshielding layer 154 may be disposed on the firstthin film transistor 108. In some embodiments, theshielding layer 154 may overlap with thesemiconductor layer 116 of the firstthin film transistor 108. Therefore, light may be incident to thesensing unit 148 without being incident to the firstthin film transistor 108, and the firstthin film transistor 108 would not be affected by the light. - Many variations and/or modifications can be made to embodiments of the disclosure. Refer to
FIG. 3 , which illustrates a cross-sectional view of aliquid crystal display 100C in accordance with some embodiments of the present disclosure. In some embodiments, one of the differences between theliquid crystal display 100B and theliquid crystal display 100C is that theliquid crystal display 100C may include ashielding layer 126′ and asensing unit 148′ replacing theshielding layer 126 and thesensing unit 148, respectively. - As shown in
FIG. 3 , thesensing unit 148′ may extend across two or more firstthin film transistors 108. More specifically, thesensing unit 148′ may overlap with the semiconductor layers of two or more firstthin film transistors 108. In addition, theshielding layer 126′ may overlap with thesensing unit 148′. Namely, the projection of theshielding layer 126′ on thesecond substrate 122 may overlap with the projection of thesensing unit 148′ on thesecond substrate 122. - Referring to
FIG. 4A , which illustrates a top view of theliquid crystal display 100C. It should be appreciated that some elements are omitted inFIG. 4A for clearly presenting the layout of the firstthin film transistor 108. More specifically, line A-A shown inFIG. 4A is a cross-sectional line, which presents a cross-sectional view ofFIG. 3 . As shown inFIG. 4A , theliquid crystal display 100C may include adata line 156 and agate line 158, which may be substantially perpendicular to thedata line 156. Thedata line 156 may be electrically connected to the source112 of the firstthin film transistor 108. Thegate line 158 may be electrically connected to thegate electrode 110 of the firstthin film transistor 108. The materials of thedata line 156 and thegate line 158 may include metal, such as such as copper (Cu), aluminum (Al), molybdenum (Mo), tungsten (W), gold (Au), chromium (Cr), nickel (Ni), platinum (Pt), titanium (Ti). As shown inFIG. 4A , thedata line 156 and thegate line 158 may define a plurality of pixels or sub-pixels of theliquid crystal display 100C. - Referring to
FIG. 4B , which illustrates a top view of theliquid crystal display 100C. It should be appreciated that some elements are omitted inFIG. 4B for clearly presenting the layout of the secondthin film transistor 134, thesensing unit 148′ and theshielding layer 126′. More specifically, line B-B shown inFIG. 4B is a cross-sectional line, which presents a cross-sectional view ofFIG. 3 . As shown inFIG. 4B , theliquid crystal display 100C may include adata line 160 and agate line 162. Thedata line 160 may be electrically connected to thesource 138 of the secondthin film transistor 134. Thegate line 162 may be electrically connected to thegate electrode 136 of the secondthin film transistor 134. The materials of thedata line 160 and thegate line 162 may include metal. - As shown in
FIGS. 4A and 4B , theshielding layer 126′ may define a plurality of openings and allow light to pass through the openings. Theshielding layer 126′ may overlap with thedata line 160 and thegate line 162 as well as thedata line 156 and thegate line 158. Thesensing unit 148′ may overlap with two or more firstthin film transistors 108. Thesensing unit 148′ may extend in a direction that is parallel to the extending direction of thegate line 162. Since thesensing unit 148′ has a surface area greater than the surface area of thesensing unit 148, thesensing unit 148′ may receive more light, thereby improving the sensitivity of theliquid crystal display 100C. - Many variations and/or modifications can be made to embodiments of the disclosure. Refer to
FIG. 4C , which illustrates a cross-sectional view of aliquid crystal display 100C in accordance with some embodiments of the present disclosure. In some embodiments, thesensing unit 148″ may include at least one protrudingportion 148P that extends in a direction substantially parallel to the extending direction of with thedata line 160. In addition, as shown inFIG. 4C , theshielding layer 126′ may overlap with the at least one protrudingportion 148P. In this embodiment, thesensing unit 148″ has at least one protrudingportion 148P, and thesensing unit 148′ would have greater surface area, thereby improving the sensitivity of theliquid crystal display 100C. - Referring to
FIG. 5 , which illustrates a cross-sectional view of aliquid crystal display 200A in accordance with some embodiments of the present disclosure. Theliquid crystal display 200A includes afirst substrate 202. Thefirst substrate 202 may be the same as or similar to thefirst substrate 102. Theliquid crystal display 200A may include abuffer layer 204 and agate dielectric layer 206 that may be the same as or similar to thebuffer layer 104 and thegate dielectric layer 106, respectively. Theliquid crystal display 200A may include a firstthin film transistor 208. The firstthin film transistor 208 may include agate electrode 210, asource 212, adrain 214 and asemiconductor layer 216 that may be the same as or similar to thegate electrode 110, thesource 112, thedrain 114 and thesemiconductor layer 116, respectively. In some examples, the semiconductor layer may include a doped region and an un-doped region. Though it is not depicted, two or more firstthin film transistors 208 may be disposed on thefirst substrate 202, and the number of firstthin film transistors 208 is not limited in the present disclosure. Theliquid crystal display 200A may include adielectric layer 218 and apassivation layer 220. The material of thedielectric layer 218 and thepassivation layer 220 may include dielectric materials such as PSG, BPSG, FSG, silicon oxide, silicon nitride, amorphous fluorinated carbon, parylene, BCB, polyimides, or other suitable materials. As shown inFIG. 5 , theliquid crystal display 200A may include acolor filter layer 226 a and acolor filter layer 226 b disposed on thepassivation layer 220. Thecolor filter layer 226 a and thecolor filter layer 226 b may allow light with specific wavelength to pass through. For example, thecolor filter layer 226 a and thecolor filter layer 226 b may include, but are not limited to, a red color filter layer, a green color filter layer, a blue color filter layer or an IR color filter layer. Theliquid crystal display 200A may include aplanarization layer 230. The material of theplanarization layer 230 may be the same as or similar to that of thepassivation layer 220. In some examples, theliquid crystal display 200A may include a curved liquid crystal display or a flexible liquid crystal display. Thecolor filter layer 226 a and thecolor filter layer 226 b disposed on thefirst substrate 202 may reduce the light leakage caused by bending the liquid crystal display. - As shown in
FIG. 5 , theliquid crystal display 200A may include apixel electrode 232, adielectric layer 234 and acommon electrode 236. Thepixel electrode 232 is disposed on theplanarization layer 230, and thecommon electrode 236 is disposed on thedielectric layer 234. In other examples, thepixel electrode 232 may be disposed on thecommon electrode 236, or thepixel electrode 232 and thecommon electrode 236 may be disposed on the same layer, but the present disclosure is not limited thereto. The voltage difference between thepixel electrode 232 and thecommon electrode 236 may be controlled by the firstthin film transistor 208 through a conductive throughhole 238. The conductive throughhole 238 may penetrate theplanarization layer 230 and thecolor filter layer 226 b.FIG. 5 illustrates that thecommon electrode 236 is patterned, and thecommon electrode 236 would have discrete portions. Many variations and/or modifications can be made to embodiments of the disclosure. In some embodiments, thecommon electrode 236 is not patterned. The material of thepixel electrode 232, thecommon electrode 236 and the conductive throughhole 238 may include a metal, a transparent conductive material (e.g. indium tin oxide), or a combination thereof. - The
liquid crystal display 200A may include analignment layer 240. Thealignment layer 240 may be used to control the alignment of theliquid crystal layer 242. The material of thealignment layer 240 may include, but is not limited to, polyimide (PI). As shown inFIG. 5 , theliquid crystal display 200A may include aspacer 244 disposed between thefirst substrate 202 and asecond substrate 246. In some embodiments, the material of thespacer 244 may include, but is not limited to, polyethylene terephthalate (PET), polyethylene (PE), polyethersulfone (PES), polycarbonate (PC), polymethylmethacrylate (PMMA), glass, any other suitable materials, or a combination thereof. - As shown in
FIG. 5 , theliquid crystal display 200A may include thesecond substrate 246 that may be the same as or similar to thesecond substrate 122. Theliquid crystal display 200A may include agate dielectric layer 248 that may be the same as or similar to thegate dielectric layer 128. Theliquid crystal display 200A may include a secondthin film transistor 250. The secondthin film transistor 250 may include agate electrode 252 a, agate electrode 252 b, asource 254, adrain 256 and asemiconductor layer 258. In this embodiment, the secondthin film transistor 250 include a double gate thin film transistor that has two gate electrodes disposed on two opposite sides of the semiconductor layer of the secondthin film transistor 250. In other examples, the secondthin film transistor 250 may include a top gate thin film transistor, a bottom gate thin film transistor, or a dual gate thin film transistor. In some embodiments, thegate electrode 252 b may be optionally formed. - The
source 254, thedrain 256 and thesemiconductor layer 258 may be the same as or similar to thesource 138, thedrain 140 and thesemiconductor layer 142, respectively. In some embodiments, the material(s) of thesource 254 and thedrain 256 may include metal. Theliquid crystal display 200A may include asensing unit 264 that may be the same as or similar to thesensing unit 148. As shown inFIG. 5 , the secondthin film transistor 250 is electrically connected to thesensing unit 264. Though it is not depicted, two or more secondthin film transistors 250 andsensing units 264 may be disposed on thesecond substrate 246. The number of secondthin film transistors 250 and the number ofsensing units 264 are not limited in the present disclosure. Theliquid crystal display 200A further includes adielectric layer 266, adielectric layer 268. The materials of thedielectric layer 266 and thedielectric layer 268 may include the dielectric materials mentioned above. - The
liquid crystal display 200A may include anorientation layer 270. As shown inFIG. 5 , thealignment layer 240 and thealignment layer 270 may be disposed on two opposite sides of theliquid crystal layer 242 and configured to control the alignment of theliquid crystal layer 242. The material of thealignment layer 270 may include, but is not limited to, polyimide. Theliquid crystal display 200A may include a liquid-emitting region 200LR that may be defined as, but is not limited to, a region overlapping with thepixel electrode 232. - In this embodiment, the
gate electrode 252 a may be used as a shielding layer, and light affecting the semiconductor of the secondthin film transistor 250 may be reduce. Moreover, the color filter layers may be disposed on thefirst substrate 202 but not on thesecond substrate 246. Since some of the thin film transistors, such as the secondthin film transistors 250, are disposed on thesecond substrate 246, there is an additional space that could be used to dispose the color filter layers. Therefore, the space on thefirst substrate 202 may be used in a more efficient way. Besides, when theliquid crystal display 200A is a curved liquid crystal display, the color filter layers disposed on thefirst substrate 202 may reduce the color shift caused by the mis-alignment between the pixels and the color filter layers. - Many variations and/or modifications can be made to embodiments of the disclosure. Refer to
FIG. 6 , which illustrates a cross-sectional view of aliquid crystal display 200B in accordance with some embodiments of the present disclosure. In some embodiments, one of the differences between theliquid crystal display 200A and theliquid crystal display 200B is that theliquid crystal display 200B may further include buffer layers 272 and 274 disposed on thesecond substrate 246. The buffer layers 272 and 274 may be the same as or similar to thebuffer layer 142. Moreover, theliquid crystal display 200B may include ashielding layer 276, ashielding layer 278 and ashielding layer 280. It should be appreciated that theshielding layer 276, theshielding layer 278 and/or theshielding layer 280 can shield a portion of light including visible light or light with specific wavelength, such as infrared light (IR) or ultraviolet light (UV). In another example, theshielding layer 276, theshielding layer 278 and/or theshielding layer 280 include a metal material for shielding electric field. In addition, in this embodiment, theliquid crystal display 200B may include the secondthin film transistor 250 with a single gate electrode, such as agate electrode 252. In the case where the material(s) of theshielding layer 276, theshielding layer 278 and/or theshielding layer 280 include conductive material such as metal, theshielding layer 276, theshielding layer 278 and/or theshielding layer 280 may not be in contact with other conductive and/or semi-conductive components, such as the conductive throughhole 238. - In some embodiments, the
shielding layer 276 may be disposed between thesecond substrate 246 and the secondthin film transistor 250. As shown inFIG. 6 , theshielding layer 276 overlaps with thesemiconductor layer 258 of the secondthin film transistor 250. Theshielding layer 278 may be disposed between the secondthin film transistor 250 and theliquid crystal layer 242. In some embodiments, theshielding layer 278 overlaps with thesemiconductor layer 258 of the secondthin film transistor 250. - The
shielding layer 280 may be disposed between the firstthin film transistor 208 and theliquid crystal layer 242. In some embodiments, theshielding layer 280 overlaps with thesemiconductor layer 216 of the firstthin film transistor 208. Moreover, at least a portion of theshielding layer 280 may be disposed between thecolor filter layer 226 a and thecolor filter layer 226 b. - As shown in
FIG. 6 , the light beam LB from a light source may be incident to thesensing unit 264 while reducing the possibility of affecting the firstthin film transistor 208 and the secondthin film transistor 250. In some embodiments, at least one of theshielding layer 276, theshielding layer 278 and theshielding layer 280 may be optionally formed according to the requirement of design. For example, theshielding layer 278 and theshielding layer 280 may not be formed in some embodiments. - In some embodiments, the materials of the
shielding layer 276, theshielding layer 278 and/or theshielding layer 280 may be different. For example, theshielding layer 280 may include metal material to reflect the light from the light source. Theshielding layer 276 and/or theshielding layer 278 may include a light-absorbing material to decrease the reflectance of the secondthin film transistor 250. - Many variations and/or modifications can be made to embodiments of the disclosure. Refer to
FIG. 7 , which illustrates a cross-sectional view of aliquid crystal display 200C in accordance with some embodiments of the present disclosure. In some embodiments, one of the differences between theliquid crystal display 200B and theliquid crystal display 200C is that theliquid crystal display 200C may include ashielding layer 282. In some embodiments, theshielding layer 282 may not overlap with thesemiconductor layer 258 of the secondthin film transistor 250. In some embodiment, theshielding layer 282 may include an extending portion of thesource 254. That is, thesource 254 may include an extending portion disposed on the 268 as a shielding layer. Because of theshielding layer 282 and thespacer 244, light from a light source may be incident to thesensing unit 264 while reducing the possibility of affecting the secondthin film transistor 250. - Referring to
FIG. 8 , which illustrates a cross-sectional view of aliquid crystal display 300 in accordance with some embodiments of the present disclosure. Theliquid crystal display 300 includes afirst substrate 302. Thefirst substrate 302 may be the same as or similar to thefirst substrate 102. Theliquid crystal display 300 may include abacklight module 304. Thebacklight module 304 may include at least one light source. For example, thebacklight module 304 may include a plurality of light-emitting diodes (LED), organic light-emitting diodes (OLED). The light-emitting diodes may be a micro LED or a mini LED. Thebacklight module 304 may include, but is not limited to, direct type backlight module or edge-lit type backlight module. Some additional layers may be disposed between thefirst substrate 302 and thebacklight module 304, such as a polarizer, but it is not limited thereto. - The
liquid crystal display 300 may include abuffer layer 306 and agate dielectric layer 308 that may be the same as or similar to thebuffer layer 104 and thegate dielectric layer 106, respectively. Theliquid crystal display 300 may include a firstthin film transistor 310. The firstthin film transistor 310 may include agate electrode 312, asource 314, adrain 316 and asemiconductor layer 318 that may be the same as or similar to thegate electrode 110, thesource 112, thedrain 114 and thesemiconductor layer 116, respectively. Though it is not depicted, two or more firstthin film transistors 310 may be disposed on thefirst substrate 302, and the number of firstthin film transistors 310 is not limited in the present disclosure. Theliquid crystal display 300 may include adielectric layer 322. The material of thedielectric layer 322 may include the dielectric material(s) mentioned above. - As shown in
FIG. 8 , theliquid crystal display 300 may include ashielding layer 324 on thedielectric layer 322. Theshielding layer 324 may be the same as or similar to theshielding layer 154. Theliquid crystal display 300 may include acolor filter layer 326 a and acolor filter layer 326 b disposed on thedielectric layer 322.FIG. 8 illustrates thecolor filter layer 326 a and thecolor filter layer 326 b are separated from each other. In some examples, thecolor filter layer 326 a and thecolor filter layer 326 b may be partially overlapped. Thecolor filter layer 326 a and thecolor filter layer 326 b may allow light with specific wavelength to pass through. For example, thecolor filter layer 326 a and thecolor filter layer 326 b may include, but are not limited to, a red color filter, a green color filter, a blue color filter or an IR color filter. Theliquid crystal display 300 may include a conductive throughhole 328. In some embodiments, the conductive throughhole 328 may penetrate thecolor filter layer 326 b and thedielectric layer 322. The conductive throughhole 328 may include conductive material, such as metal or transparent conductive material (e.g. indium tin oxide). The conductive throughhole 328 may be electrically connected to the firstthin film transistor 310. Theliquid crystal display 300 may include aplanarization layer 332. The material of theplanarization layer 332 may be the same as or similar to that of thedielectric layer 322. - As shown in
FIG. 8 , theliquid crystal display 300 may include apixel electrode 330 and acommon electrode 336. Thepixel electrode 330 may be disposed on thecolor filter layer 326 b, and thecommon electrode 336 may be disposed on theplanarization layer 332. In other examples, thepixel electrode 330 may be disposed on thecommon electrode 336, or thepixel electrode 330 and thecommon electrode 336 may be disposed on the same layer, but the present disclosure is not limited thereto. The voltage difference between thepixel electrode 330 and thecommon electrode 336 may be controlled by the firstthin film transistor 310 through the conductive throughhole 328. - The
liquid crystal display 300 may include analignment layer 334. Thealignment layer 334 may include, but is not limited to, polyimide. As shown inFIG. 8 , theliquid crystal display 300 may include aspacer 339 disposed between thefirst substrate 302 and asecond substrate 340. The material of thespacer 339 may be the same as or similar to that of thespacer 244. - As shown in
FIG. 8 , theliquid crystal display 300 may include thesecond substrate 340 that may be the same as or similar to thesecond substrate 122. Theliquid crystal display 300 may include abuffer layer 342, abuffer layer 344 and adielectric layer 346 that may be the same as or similar to thebuffer layer 272, thebuffer layer 274 and thedielectric layer 266, respectively. Theliquid crystal display 300 may include ashielding layer 348 that may be the same as or similar to theshielding layer 126. Theliquid crystal display 300 may include a secondthin film transistor 350. The secondthin film transistor 350 may include agate electrode 352, asource 354, adrain 356 and asemiconductor layer 358 that may be the same as or similar to thegate electrode 136, thesource 138, thedrain 140 and thesemiconductor layer 142, respectively. In some embodiments, the material(s) of thesource 354 and thedrain 356 may include metal. - The
liquid crystal display 300 may include asensing unit 364 that may be the same as or similar to thesensing unit 148. As shown inFIG. 8 , the secondthin film transistor 350 is electrically connected to thesensing unit 364 through theelectrode 362. Though it is not depicted, two or more secondthin film transistors 350 andsensing units 364 may be disposed on thesecond substrate 340, and the number of secondthin film transistor 350 and/orsensing units 364 is not limited in the present disclosure. In some examples, a buffer layer (not shown) or a planarization layer (not shown) may be disposed between thesensing unit 364 and analignment layer 368, but it is not limited thereto. - The
liquid crystal display 300 may include adielectric layer 366. Theliquid crystal display 300 may include thealignment layer 368. As shown inFIG. 8 , thealignment layer 334 and thealignment layer 368 are disposed on two opposite sides of theliquid crystal layer 338. Thealignment layer 368 may include, but is not limited to, polyimide. Theliquid crystal display 300 may include asealant 370, which may be disposed in the peripheral region of theliquid crystal display 300. - In some embodiments, the distance D2 between the first
thin film transistor 310 and the color filter layer (e.g. thecolor filter layer 326 b) overlapping with the firstthin film transistor 310 along the normal direction of thefirst substrate 302 is less than the distance D3 between the secondthin film transistor 350 and the color filter layer (e.g. thecolor filter layer 326 b) overlapping with the secondthin film transistor 350 along the normal direction of thefirst substrate 302. More specifically, the minimum distance between thesemiconductor layer 318 of the firstthin film transistor 310 and the color filter layer along the normal direction of thefirst substrate 302 is less than the minimum distance between thesemiconductor layer 358 of the secondthin film transistor 350 and the color filter layer along the normal direction of thefirst substrate 302. - Referring to
FIGS. 9A-9E , which illustrate cross-sectional views of different stages of a process for manufacturing aliquid crystal display 400A in accordance with some embodiments of the present disclosure. Note that the same or similar elements or layers corresponding to those of the liquid crystal display are denoted by like reference numerals. In some embodiments, the same or similar elements or layers denoted by like reference numerals have the same meaning and will not be repeated for the sake of brevity. - As shown in
FIG. 9A , thefirst substrate 102 is provided. Next, the firstthin film transistor 108 may be formed on thefirst substrate 102 as shown inFIG. 9B . Thebuffer layer 104, thegate dielectric layer 106, and thedielectric layer 120 may also be formed on thefirst substrate 102. Next, thesecond substrate 122 is provided as shown inFIG. 9C . In some embodiments, as shown inFIG. 9D , the secondthin film transistor 134 and thesensing unit 148 are formed on thesecond substrate 122 in accordance with some embodiments. As shown inFIG. 9E , thefirst substrate 102 and thesecond substrate 122 are combined, and theliquid crystal layer 150 is formed between thefirst substrate 102 and thesecond substrate 122. It should be appreciated that manufacturing theliquid crystal display 400A may include forming other elements. For example, some shielding layers may be formed on thefirst substrate 102 and/or on thesecond substrate 122. Some color filter layers may be formed on thefirst substrate 102 or thesecond substrate 122. Moreover, the stages ofFIGS. 9A and 9B may be performed before, after, or during the stages ofFIGS. 9C and 9D . - Referring to
FIGS. 10A-10E , which illustrate cross-sectional views of different stages of a process for manufacturing aliquid crystal display 400B in accordance with some embodiments of the present disclosure. - As shown in
FIG. 10A , thefirst substrate 102 is provided, and a firstflexible substrate 170 may be attached to or formed on thefirst substrate 102. Next, the firstthin film transistor 108 may be formed on the firstflexible substrate 170 as shown inFIG. 10B . Thebuffer layer 104, thegate dielectric layer 106, and thedielectric layer 120 may also be formed on the firstflexible substrate 170. In some embodiments, the firstflexible substrate 170 is disposed between thefirst substrate 102 and the firstthin film transistor 108. Next, thesecond substrate 122 is provided, and a secondflexible substrate 180 may be attached to or formed on thesecond substrate 122 as shown inFIG. 10C . In some embodiments, as shown inFIG. 10D , the secondthin film transistor 134 and thesensing unit 148 are formed on the secondflexible substrate 180 in accordance with some embodiments. In some embodiments, the secondflexible substrate 180 is disposed between thesecond substrate 122 and the secondthin film transistor 134. As shown inFIG. 10E , thefirst substrate 102 and thesecond substrate 122 are combined, and theliquid crystal layer 150 is formed between thefirst substrate 102 and thesecond substrate 122. In some embodiments, the firstflexible substrate 170 and the secondflexible substrate 180 are formed between thefirst substrate 102 and thesecond substrate 122. It should be appreciated that manufacturing theliquid crystal display 400B may include forming other elements. For example, some shielding layers may be formed on thefirst substrate 102 and/or on thesecond substrate 122. Some color filter layers may be formed on thefirst substrate 102 or thesecond substrate 122. Moreover, the stages ofFIGS. 10A and 10B may be performed before, after, or during the stages ofFIGS. 10C and 10D . - Referring to
FIGS. 11A-11E , which illustrate cross-sectional views of different stages of a process for manufacturing aliquid crystal display 400C in accordance with some embodiments of the present disclosure. - As shown in
FIG. 11A , thefirst substrate 102 is provided. Next, the firstthin film transistor 108′ may be formed on thefirst substrate 102 as shown inFIG. 10B . Thebuffer layer 104, thegate dielectric layer 106, and thedielectric layer 120 may also be formed on thefirst substrate 102. In some embodiments, the firstflexible substrate 170 is formed on the firstthin film transistor 108′, and the firstthin film transistor 108′ would be disposed between thefirst substrate 102 and the firstflexible substrate 170. The difference between the firstthin film transistor 108′ and the firstthin film transistor 108 is the position of thegate electrode 110. In other embodiments, the firstthin film transistor 108′ and the firstthin film transistor 108 may be the same type of thin film transistor. For example, the firstthin film transistor 108′ and the firstthin film transistor 108 both are top gate thin film transistors or bottom gate thin film transistors, but it is not limited thereto. The firstthin film transistor 108 and the firstthin film transistor 108′ may perform the same function. - Next, the
second substrate 122 is provided as shown inFIG. 11C . In some embodiments, as shown inFIG. 11D , the secondthin film transistor 134′ and thesensing unit 148 are formed on thesecond substrate 122. In some embodiments, the secondflexible substrate 180 is formed on the secondthin film transistor 134′. The secondthin film transistor 134′ may be disposed between thesecond substrate 122 and the secondflexible substrate 180. The difference between the secondthin film transistor 134′ and the secondthin film transistor 134 is the position of thegate electrode 136. The secondthin film transistor 134 and the secondthin film transistor 134′ may perform the same function. In other embodiments, the secondthin film transistor 134′ and the secondthin film transistor 134 may be the same type of thin film transistor. For example, the secondthin film transistor 134′ and the secondthin film transistor 134 both are top gate thin film transistors or bottom gate thin film transistors, but it is not limited thereto. Moreover, the stages ofFIGS. 11A and 11B may be performed before, after, or during the stages ofFIGS. 11C and 11D . - As shown in
FIG. 11E , the firstflexible substrate 170 and the secondflexible substrate 180 are combined, and thefirst substrate 102 and thesecond substrate 122 may be removed. In some embodiments, the firstthin film transistor 108′ and the secondthin film transistor 134′ are formed between the firstflexible substrate 170 and the secondflexible substrate 180. - Refer to
FIG. 12 , aliquid crystal display 500 is provided. In some embodiment, theliquid crystal display 500 may include a flexible liquid crystal display, a touch liquid crystal display, a curved liquid crystal display, a tiled display or other suitable displays. For example, theliquid crystal display 500 is a curved liquid crystal display. When theliquid crystal display 500 is bended to form a curved liquid crystal display, the alignment of some of the components (e.g. the color filter layer or the shielding layer) of theliquid crystal display 500 may be shifted. Therefore, some of the components (e.g. the color filter layer and/or the shielding layer (not shown)) disposed on thesecond substrate 122 originally may be moved to be disposed on thefirst substrate 102 to reduce the shift. The space of thesecond substrate 122 may be sufficient to disposesensing unit 148′ and the secondthin film transistor 134. - Although some embodiments of the present disclosure and their advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure as defined by the appended claims.
Claims (20)
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US11333913B2 (en) * | 2019-06-21 | 2022-05-17 | Innolux Corporation | Liquid crystal device |
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US20200301185A1 (en) * | 2019-03-21 | 2020-09-24 | Innolux Corporation | Liquid crystal displays and methods for manufacturing the same |
CN114675444A (en) * | 2020-12-10 | 2022-06-28 | 群创光电股份有限公司 | Electronic device |
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CN103217817B (en) * | 2012-01-20 | 2016-02-24 | 群康科技(深圳)有限公司 | In-cell touch panel display |
KR102254619B1 (en) * | 2013-11-15 | 2021-05-24 | 삼성디스플레이 주식회사 | Display substrate and a method of the same |
US9964820B2 (en) * | 2014-02-04 | 2018-05-08 | Apple Inc. | Displays with flipped panel structures |
TWI559185B (en) * | 2014-10-03 | 2016-11-21 | 速博思股份有限公司 | Display device with fingerprint recognition and touch detection |
TWI575436B (en) * | 2016-03-22 | 2017-03-21 | 友達光電股份有限公司 | Touch sensing display apparatus and method for fabricating the same |
US20200301185A1 (en) * | 2019-03-21 | 2020-09-24 | Innolux Corporation | Liquid crystal displays and methods for manufacturing the same |
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- 2019-03-21 US US16/360,546 patent/US20200301185A1/en not_active Abandoned
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US6236063B1 (en) * | 1998-05-15 | 2001-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US20030020852A1 (en) * | 2001-07-25 | 2003-01-30 | Lg. Philips Lcd Co., Ltd. | Liquid crystal display device and fabricating method thereof |
US20120033161A1 (en) * | 2010-08-09 | 2012-02-09 | Samsung Electronics Co., Ltd. | Photosensor, manufacturing method thereof, and liquid crystal display including a photosensor |
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US11333913B2 (en) * | 2019-06-21 | 2022-05-17 | Innolux Corporation | Liquid crystal device |
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CN111722427A (en) | 2020-09-29 |
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