JPH1126604A5 - - Google Patents

Info

Publication number
JPH1126604A5
JPH1126604A5 JP1997178401A JP17840197A JPH1126604A5 JP H1126604 A5 JPH1126604 A5 JP H1126604A5 JP 1997178401 A JP1997178401 A JP 1997178401A JP 17840197 A JP17840197 A JP 17840197A JP H1126604 A5 JPH1126604 A5 JP H1126604A5
Authority
JP
Japan
Prior art keywords
wiring layer
wiring
high resistance
storage node
dielectric film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997178401A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1126604A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP9178401A priority Critical patent/JPH1126604A/ja
Priority claimed from JP9178401A external-priority patent/JPH1126604A/ja
Priority to TW086115740A priority patent/TW353805B/zh
Priority to DE19750895A priority patent/DE19750895C2/de
Priority to KR1019970072508A priority patent/KR100348185B1/ko
Priority to US09/008,594 priority patent/US6271569B1/en
Publication of JPH1126604A publication Critical patent/JPH1126604A/ja
Publication of JPH1126604A5 publication Critical patent/JPH1126604A5/ja
Pending legal-status Critical Current

Links

JP9178401A 1997-07-03 1997-07-03 半導体装置およびその製造方法 Pending JPH1126604A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP9178401A JPH1126604A (ja) 1997-07-03 1997-07-03 半導体装置およびその製造方法
TW086115740A TW353805B (en) 1997-07-03 1997-10-22 Semiconductor device and its manufacturing method
DE19750895A DE19750895C2 (de) 1997-07-03 1997-11-17 Halbleitereinrichtung mit Speicherzellen und Herstellungsverfahren derselben
KR1019970072508A KR100348185B1 (ko) 1997-07-03 1997-12-23 반도체장치및그제조방법
US09/008,594 US6271569B1 (en) 1997-07-03 1998-01-16 Semiconductor device having memory cells and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9178401A JPH1126604A (ja) 1997-07-03 1997-07-03 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPH1126604A JPH1126604A (ja) 1999-01-29
JPH1126604A5 true JPH1126604A5 (enExample) 2004-09-02

Family

ID=16047863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9178401A Pending JPH1126604A (ja) 1997-07-03 1997-07-03 半導体装置およびその製造方法

Country Status (5)

Country Link
US (1) US6271569B1 (enExample)
JP (1) JPH1126604A (enExample)
KR (1) KR100348185B1 (enExample)
DE (1) DE19750895C2 (enExample)
TW (1) TW353805B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100248205B1 (ko) * 1997-06-25 2000-03-15 김영환 반도체 메모리 디바이스 및 그 형성방법
JP4009810B2 (ja) * 2000-04-11 2007-11-21 セイコーエプソン株式会社 半導体記憶装置
JP4000436B2 (ja) * 2000-04-27 2007-10-31 セイコーエプソン株式会社 半導体記憶装置
JP4056392B2 (ja) 2001-01-30 2008-03-05 株式会社ルネサステクノロジ 半導体集積回路装置
JP4535506B2 (ja) * 2001-01-30 2010-09-01 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP2004200598A (ja) * 2002-12-20 2004-07-15 Renesas Technology Corp 半導体記憶装置および半導体装置
JP2004253730A (ja) 2003-02-21 2004-09-09 Renesas Technology Corp 半導体集積回路装置およびその製造方法
JP4570352B2 (ja) * 2003-12-16 2010-10-27 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US20080272408A1 (en) * 2007-05-01 2008-11-06 Dsm Solutions, Inc. Active area junction isolation structure and junction isolated transistors including igfet, jfet and mos transistors and method for making
JP2009044183A (ja) * 2008-10-24 2009-02-26 Renesas Technology Corp 半導体集積回路装置およびその製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58148453A (ja) 1982-02-26 1983-09-03 Mitsubishi Electric Corp 半導体装置
JPH0682801B2 (ja) * 1983-12-23 1994-10-19 株式会社日立製作所 半導体記憶装置とそのレイアウト方法
JP2559360B2 (ja) * 1984-11-28 1996-12-04 株式会社日立製作所 半導体メモリ装置
JPH0685431B2 (ja) 1985-06-10 1994-10-26 株式会社日立製作所 半導体装置
US5132771A (en) * 1985-12-27 1992-07-21 Hitachi, Ltd. Semiconductor memory device having flip-flop circuits
JPH06103741B2 (ja) * 1988-06-30 1994-12-14 日本電気株式会社 半導体記憶装置
JP3089638B2 (ja) 1989-11-16 2000-09-18 ソニー株式会社 半導体メモリ装置
JPH04162668A (ja) * 1990-10-26 1992-06-08 Hitachi Ltd 半導体装置およびその製造方法
JP3328971B2 (ja) 1992-11-06 2002-09-30 ソニー株式会社 スタティックｒａｍ
KR100305123B1 (ko) * 1992-12-11 2001-11-22 비센트 비.인그라시아, 알크 엠 아헨 정적랜덤액세스메모리셀및이를포함하는반도체장치
JP2682393B2 (ja) * 1993-08-13 1997-11-26 日本電気株式会社 スタティック形半導体記憶装置
JP3285438B2 (ja) * 1993-10-29 2002-05-27 三菱電機株式会社 半導体記憶装置
JP3157969B2 (ja) 1993-11-29 2001-04-23 京セラ株式会社 弾性表面波素子の製造方法
JPH08195445A (ja) 1995-01-17 1996-07-30 Sony Corp 半導体メモリ装置
JP2621820B2 (ja) * 1995-02-28 1997-06-18 日本電気株式会社 スタティック型メモリセル
JPH08250605A (ja) 1995-03-07 1996-09-27 Hitachi Ltd 半導体集積回路装置
JP3400894B2 (ja) * 1995-07-14 2003-04-28 三菱電機株式会社 スタティック型半導体記憶装置
US5808941A (en) * 1996-01-04 1998-09-15 Micron Technology, Inc. SRAM cell employing substantially vertically elongated pull-up resistors

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