JP2007013116A5 - - Google Patents

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Publication number
JP2007013116A5
JP2007013116A5 JP2006146646A JP2006146646A JP2007013116A5 JP 2007013116 A5 JP2007013116 A5 JP 2007013116A5 JP 2006146646 A JP2006146646 A JP 2006146646A JP 2006146646 A JP2006146646 A JP 2006146646A JP 2007013116 A5 JP2007013116 A5 JP 2007013116A5
Authority
JP
Japan
Prior art keywords
conductive layer
transistor
peripheral circuit
organic compound
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006146646A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007013116A (ja
JP4939838B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006146646A priority Critical patent/JP4939838B2/ja
Priority claimed from JP2006146646A external-priority patent/JP4939838B2/ja
Publication of JP2007013116A publication Critical patent/JP2007013116A/ja
Publication of JP2007013116A5 publication Critical patent/JP2007013116A5/ja
Application granted granted Critical
Publication of JP4939838B2 publication Critical patent/JP4939838B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2006146646A 2005-05-31 2006-05-26 記憶装置 Expired - Fee Related JP4939838B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006146646A JP4939838B2 (ja) 2005-05-31 2006-05-26 記憶装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005160343 2005-05-31
JP2005160343 2005-05-31
JP2006146646A JP4939838B2 (ja) 2005-05-31 2006-05-26 記憶装置

Publications (3)

Publication Number Publication Date
JP2007013116A JP2007013116A (ja) 2007-01-18
JP2007013116A5 true JP2007013116A5 (enExample) 2009-06-18
JP4939838B2 JP4939838B2 (ja) 2012-05-30

Family

ID=37751146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006146646A Expired - Fee Related JP4939838B2 (ja) 2005-05-31 2006-05-26 記憶装置

Country Status (1)

Country Link
JP (1) JP4939838B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010047288A1 (en) 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductordevice
JP2011139052A (ja) 2009-12-04 2011-07-14 Semiconductor Energy Lab Co Ltd 半導体記憶装置
US9287405B2 (en) * 2011-10-13 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor
CN116325039B (zh) * 2020-10-12 2025-11-07 株式会社村田制作所 可变电子元件以及电路装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2967126B2 (ja) * 1990-09-05 1999-10-25 セイコーインスツルメンツ株式会社 平板型光弁基板用半導体集積回路装置
JP3994634B2 (ja) * 2000-05-26 2007-10-24 松下電工株式会社 同軸コネクタプラグ
NO20015735D0 (no) * 2001-11-23 2001-11-23 Thin Film Electronics Asa Barrierelag
WO2003052829A1 (fr) * 2001-12-14 2003-06-26 Hitachi, Ltd. Dispositif semi-conducteur et procede de fabrication correspondant

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