JP2008269751A5 - - Google Patents

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Publication number
JP2008269751A5
JP2008269751A5 JP2007115087A JP2007115087A JP2008269751A5 JP 2008269751 A5 JP2008269751 A5 JP 2008269751A5 JP 2007115087 A JP2007115087 A JP 2007115087A JP 2007115087 A JP2007115087 A JP 2007115087A JP 2008269751 A5 JP2008269751 A5 JP 2008269751A5
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JP
Japan
Prior art keywords
transistor
electrically connected
terminal
line
inverter circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007115087A
Other languages
English (en)
Japanese (ja)
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JP2008269751A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007115087A priority Critical patent/JP2008269751A/ja
Priority claimed from JP2007115087A external-priority patent/JP2008269751A/ja
Publication of JP2008269751A publication Critical patent/JP2008269751A/ja
Publication of JP2008269751A5 publication Critical patent/JP2008269751A5/ja
Withdrawn legal-status Critical Current

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JP2007115087A 2007-04-25 2007-04-25 半導体記憶装置及び当該半導体記憶装置を具備する電子機器 Withdrawn JP2008269751A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007115087A JP2008269751A (ja) 2007-04-25 2007-04-25 半導体記憶装置及び当該半導体記憶装置を具備する電子機器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007115087A JP2008269751A (ja) 2007-04-25 2007-04-25 半導体記憶装置及び当該半導体記憶装置を具備する電子機器

Publications (2)

Publication Number Publication Date
JP2008269751A JP2008269751A (ja) 2008-11-06
JP2008269751A5 true JP2008269751A5 (enExample) 2010-03-18

Family

ID=40049047

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007115087A Withdrawn JP2008269751A (ja) 2007-04-25 2007-04-25 半導体記憶装置及び当該半導体記憶装置を具備する電子機器

Country Status (1)

Country Link
JP (1) JP2008269751A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7961499B2 (en) * 2009-01-22 2011-06-14 Qualcomm Incorporated Low leakage high performance static random access memory cell using dual-technology transistors
KR101930682B1 (ko) * 2009-10-29 2018-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011135999A1 (en) 2010-04-27 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
KR101899375B1 (ko) 2011-01-28 2018-09-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6012263B2 (ja) 2011-06-09 2016-10-25 株式会社半導体エネルギー研究所 半導体記憶装置
KR101933741B1 (ko) 2011-06-09 2018-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 캐시 메모리 및 캐시 메모리의 구동 방법
GB2500907B (en) 2012-04-04 2016-05-25 Platipus Ltd Static random access memory devices

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5699A (en) * 1979-06-14 1981-01-06 Mitsubishi Electric Corp Semiconductor memory unit
JP2618422B2 (ja) * 1988-02-08 1997-06-11 富士通株式会社 半導体記憶装置
JPH03134893A (ja) * 1989-10-20 1991-06-07 Fujitsu Ltd 半導体記憶装置
JPH0562474A (ja) * 1991-08-29 1993-03-12 Nec Corp 半導体メモリ装置
JPH0869693A (ja) * 1994-08-30 1996-03-12 Mitsubishi Electric Corp スタティック型半導体記憶装置
JPH11261017A (ja) * 1998-03-16 1999-09-24 Fujitsu Ltd 半導体記憶装置
JP2001202775A (ja) * 2000-01-19 2001-07-27 Ind Technol Res Inst 再書き込み擬似ｓｒａｍ及びその再書き込み方法
JP4294256B2 (ja) * 2002-03-28 2009-07-08 株式会社ルネサステクノロジ 半導体記憶装置
JP2004241473A (ja) * 2003-02-04 2004-08-26 Renesas Technology Corp 半導体記憶装置
JP4373154B2 (ja) * 2003-07-18 2009-11-25 株式会社半導体エネルギー研究所 メモリ回路およびそのメモリ回路を有する表示装置、電子機器
KR100551028B1 (ko) * 2003-10-17 2006-02-13 삼성에스디아이 주식회사 반도체 기억 장치 및 이를 이용한 평판 표시 장치
JP2006018935A (ja) * 2004-07-02 2006-01-19 Renesas Technology Corp 半導体記憶装置
GB2417588B (en) * 2004-08-23 2008-06-04 Seiko Epson Corp Memory cell

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