JP2008269751A - 半導体記憶装置及び当該半導体記憶装置を具備する電子機器 - Google Patents

半導体記憶装置及び当該半導体記憶装置を具備する電子機器 Download PDF

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JP2008269751A
JP2008269751A JP2007115087A JP2007115087A JP2008269751A JP 2008269751 A JP2008269751 A JP 2008269751A JP 2007115087 A JP2007115087 A JP 2007115087A JP 2007115087 A JP2007115087 A JP 2007115087A JP 2008269751 A JP2008269751 A JP 2008269751A
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Prior art keywords
transistor
read
memory cell
line
power supply
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JP2007115087A
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Japanese (ja)
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JP2008269751A5 (enExample
Inventor
Takayuki Inoue
卓之 井上
Yoshimoto Kurokawa
義元 黒川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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JP2007115087A 2007-04-25 2007-04-25 半導体記憶装置及び当該半導体記憶装置を具備する電子機器 Withdrawn JP2008269751A (ja)

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JP2007115087A JP2008269751A (ja) 2007-04-25 2007-04-25 半導体記憶装置及び当該半導体記憶装置を具備する電子機器

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JP2007115087A JP2008269751A (ja) 2007-04-25 2007-04-25 半導体記憶装置及び当該半導体記憶装置を具備する電子機器

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JP2008269751A5 JP2008269751A5 (enExample) 2010-03-18

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011135999A1 (en) * 2010-04-27 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP2012516058A (ja) * 2009-01-22 2012-07-12 クアルコム，インコーポレイテッド デュアル技術トランジスタを用いた低リーク高性能スタティックランダムアクセスメモリセル
WO2012102281A1 (en) * 2011-01-28 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012169142A1 (en) * 2011-06-09 2012-12-13 Semiconductor Energy Laboratory Co., Ltd. Cache memory and method for driving the same
GB2500907A (en) * 2012-04-04 2013-10-09 Silicon Basis Ltd SRAM having separate storage cells and read-write circuit
US8953354B2 (en) 2011-06-09 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method of driving semiconductor memory device
JP2016106419A (ja) * 2009-10-29 2016-06-16 株式会社半導体エネルギー研究所 半導体装置

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5699A (en) * 1979-06-14 1981-01-06 Mitsubishi Electric Corp Semiconductor memory unit
JPH01204292A (ja) * 1988-02-08 1989-08-16 Fujitsu Ltd 半導体記憶装置
JPH03134893A (ja) * 1989-10-20 1991-06-07 Fujitsu Ltd 半導体記憶装置
JPH0562474A (ja) * 1991-08-29 1993-03-12 Nec Corp 半導体メモリ装置
JPH0869693A (ja) * 1994-08-30 1996-03-12 Mitsubishi Electric Corp スタティック型半導体記憶装置
JPH11261017A (ja) * 1998-03-16 1999-09-24 Fujitsu Ltd 半導体記憶装置
JP2001202775A (ja) * 2000-01-19 2001-07-27 Ind Technol Res Inst 再書き込み擬似ｓｒａｍ及びその再書き込み方法
JP2003288785A (ja) * 2002-03-28 2003-10-10 Mitsubishi Electric Corp 半導体記憶装置
JP2004241473A (ja) * 2003-02-04 2004-08-26 Renesas Technology Corp 半導体記憶装置
JP2005038557A (ja) * 2003-07-18 2005-02-10 Semiconductor Energy Lab Co Ltd メモリ回路およびメモリ回路を有する表示装置
JP2005122873A (ja) * 2003-10-17 2005-05-12 Samsung Sdi Co Ltd 半導体記憶装置およびフラットパネル表示装置
JP2006018935A (ja) * 2004-07-02 2006-01-19 Renesas Technology Corp 半導体記憶装置
JP2006059523A (ja) * 2004-08-23 2006-03-02 Seiko Epson Corp メモリーセル

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5699A (en) * 1979-06-14 1981-01-06 Mitsubishi Electric Corp Semiconductor memory unit
JPH01204292A (ja) * 1988-02-08 1989-08-16 Fujitsu Ltd 半導体記憶装置
JPH03134893A (ja) * 1989-10-20 1991-06-07 Fujitsu Ltd 半導体記憶装置
JPH0562474A (ja) * 1991-08-29 1993-03-12 Nec Corp 半導体メモリ装置
JPH0869693A (ja) * 1994-08-30 1996-03-12 Mitsubishi Electric Corp スタティック型半導体記憶装置
JPH11261017A (ja) * 1998-03-16 1999-09-24 Fujitsu Ltd 半導体記憶装置
JP2001202775A (ja) * 2000-01-19 2001-07-27 Ind Technol Res Inst 再書き込み擬似ｓｒａｍ及びその再書き込み方法
JP2003288785A (ja) * 2002-03-28 2003-10-10 Mitsubishi Electric Corp 半導体記憶装置
JP2004241473A (ja) * 2003-02-04 2004-08-26 Renesas Technology Corp 半導体記憶装置
JP2005038557A (ja) * 2003-07-18 2005-02-10 Semiconductor Energy Lab Co Ltd メモリ回路およびメモリ回路を有する表示装置
JP2005122873A (ja) * 2003-10-17 2005-05-12 Samsung Sdi Co Ltd 半導体記憶装置およびフラットパネル表示装置
JP2006018935A (ja) * 2004-07-02 2006-01-19 Renesas Technology Corp 半導体記憶装置
JP2006059523A (ja) * 2004-08-23 2006-03-02 Seiko Epson Corp メモリーセル

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012516058A (ja) * 2009-01-22 2012-07-12 クアルコム，インコーポレイテッド デュアル技術トランジスタを用いた低リーク高性能スタティックランダムアクセスメモリセル
US8576612B2 (en) 2009-01-22 2013-11-05 Qualcomm Incorporated Low leakage high performance static random access memory cell using dual-technology transistors
US10720433B2 (en) 2009-10-29 2020-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9806079B2 (en) 2009-10-29 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2016106419A (ja) * 2009-10-29 2016-06-16 株式会社半導体エネルギー研究所 半導体装置
JP2011249782A (ja) * 2010-04-27 2011-12-08 Semiconductor Energy Lab Co Ltd 半導体メモリ装置
US8605477B2 (en) 2010-04-27 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2011135999A1 (en) * 2010-04-27 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8937304B2 (en) 2011-01-28 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2012102281A1 (en) * 2011-01-28 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9490267B2 (en) 2011-01-28 2016-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8908406B2 (en) 2011-06-09 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Cache memory and method for driving the same
US8953354B2 (en) 2011-06-09 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method of driving semiconductor memory device
CN103597545A (zh) * 2011-06-09 2014-02-19 株式会社半导体能源研究所 高速缓冲存储器及其驱动方法
CN103597545B (zh) * 2011-06-09 2016-10-19 株式会社半导体能源研究所 高速缓冲存储器及其驱动方法
JP2013016157A (ja) * 2011-06-09 2013-01-24 Semiconductor Energy Lab Co Ltd キャッシュメモリ、及びキャッシュメモリの駆動方法
KR101933741B1 (ko) 2011-06-09 2018-12-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 캐시 메모리 및 캐시 메모리의 구동 방법
WO2012169142A1 (en) * 2011-06-09 2012-12-13 Semiconductor Energy Laboratory Co., Ltd. Cache memory and method for driving the same
GB2500907B (en) * 2012-04-04 2016-05-25 Platipus Ltd Static random access memory devices
GB2500907A (en) * 2012-04-04 2013-10-09 Silicon Basis Ltd SRAM having separate storage cells and read-write circuit
US10482950B2 (en) 2012-04-04 2019-11-19 Platipus Limited Static random access memory devices including a plurality of storage cells and a read/write circuit

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