JP2009266364A5 - - Google Patents

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Publication number
JP2009266364A5
JP2009266364A5 JP2009090443A JP2009090443A JP2009266364A5 JP 2009266364 A5 JP2009266364 A5 JP 2009266364A5 JP 2009090443 A JP2009090443 A JP 2009090443A JP 2009090443 A JP2009090443 A JP 2009090443A JP 2009266364 A5 JP2009266364 A5 JP 2009266364A5
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JP
Japan
Prior art keywords
sense amplifier
write
voltage
memory cell
semiconductor memory
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JP2009090443A
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English (en)
Japanese (ja)
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JP2009266364A (ja
JP5566623B2 (ja
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Priority to JP2009090443A priority Critical patent/JP5566623B2/ja
Priority claimed from JP2009090443A external-priority patent/JP5566623B2/ja
Publication of JP2009266364A publication Critical patent/JP2009266364A/ja
Publication of JP2009266364A5 publication Critical patent/JP2009266364A5/ja
Application granted granted Critical
Publication of JP5566623B2 publication Critical patent/JP5566623B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009090443A 2008-04-04 2009-04-02 半導体記憶装置 Expired - Fee Related JP5566623B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009090443A JP5566623B2 (ja) 2008-04-04 2009-04-02 半導体記憶装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008098246 2008-04-04
JP2008098246 2008-04-04
JP2009090443A JP5566623B2 (ja) 2008-04-04 2009-04-02 半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014125646A Division JP2014197447A (ja) 2008-04-04 2014-06-18 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2009266364A JP2009266364A (ja) 2009-11-12
JP2009266364A5 true JP2009266364A5 (enExample) 2011-03-31
JP5566623B2 JP5566623B2 (ja) 2014-08-06

Family

ID=41133108

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2009090443A Expired - Fee Related JP5566623B2 (ja) 2008-04-04 2009-04-02 半導体記憶装置
JP2014125646A Withdrawn JP2014197447A (ja) 2008-04-04 2014-06-18 半導体記憶装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2014125646A Withdrawn JP2014197447A (ja) 2008-04-04 2014-06-18 半導体記憶装置

Country Status (3)

Country Link
US (1) US7933141B2 (enExample)
JP (2) JP5566623B2 (enExample)
KR (1) KR101050699B1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9754664B2 (en) 2014-03-20 2017-09-05 Kabushiki Kaisha Toshiba Semiconductor memory

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US6928026B2 (en) * 2002-03-19 2005-08-09 Broadcom Corporation Synchronous global controller for enhanced pipelining
KR101046556B1 (ko) * 2008-03-17 2011-07-05 엘피다 메모리 가부시키가이샤 단일 종단 감지 증폭기를 갖는 반도체 디바이스
KR101434400B1 (ko) * 2008-07-09 2014-08-27 삼성전자주식회사 불휘발성 메모리 장치 및 메모리 시스템 및 그것의 관리방법
JP5433187B2 (ja) * 2008-08-28 2014-03-05 ピーエスフォー ルクスコ エスエイアールエル 半導体記憶装置及びそのテスト方法
JP2011159365A (ja) * 2010-02-02 2011-08-18 Elpida Memory Inc 半導体装置及び半導体装置を含む情報処理システム
US8254195B2 (en) * 2010-06-01 2012-08-28 Qualcomm Incorporated High-speed sensing for resistive memories
JP2012123893A (ja) * 2010-11-19 2012-06-28 Elpida Memory Inc 半導体装置
US8406073B1 (en) * 2010-12-22 2013-03-26 Intel Corporation Hierarchical DRAM sensing
US8605528B2 (en) 2011-11-03 2013-12-10 International Business Machines Corporation Sense amplifier having an isolated pre-charge architecture, a memory circuit incorporating such a sense amplifier and associated methods
JP2013235624A (ja) * 2012-05-07 2013-11-21 Ps4 Luxco S A R L 半導体装置
US9310420B2 (en) * 2013-01-24 2016-04-12 Finisar Corporation Pixel test in a liquid crystal on silicon chip
US9093175B2 (en) 2013-03-27 2015-07-28 International Business Machines Corporation Signal margin centering for single-ended eDRAM sense amplifier
KR102217243B1 (ko) 2014-10-28 2021-02-18 삼성전자주식회사 저항성 메모리 장치, 저항성 메모리 시스템 및 저항성 메모리 장치의 동작방법
KR20160117222A (ko) * 2015-03-30 2016-10-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 검사 방법
US9589604B1 (en) * 2015-09-17 2017-03-07 International Business Machines Corporation Single ended bitline current sense amplifier for SRAM applications
US9792967B1 (en) 2016-06-13 2017-10-17 International Business Machines Corporation Managing semiconductor memory array leakage current
US9786345B1 (en) 2016-09-16 2017-10-10 Micron Technology, Inc. Compensation for threshold voltage variation of memory cell components
CN109756204B (zh) * 2019-03-05 2023-11-14 广东合微集成电路技术有限公司 一种滤波器、振荡产生电路和电子器件
US10796734B1 (en) * 2019-05-24 2020-10-06 Micron Technology, Inc. Apparatuses including temperature-based threshold voltage compensated sense amplifiers and methods for compensating same
CN114121073B (zh) * 2020-08-27 2023-09-12 长鑫存储技术有限公司 存储器的调节方法、调节系统以及半导体器件
CN119207511B (zh) * 2023-06-20 2025-10-14 长鑫存储技术有限公司 存储器的控制方法、控制电路和存储器
US20250124971A1 (en) * 2023-12-28 2025-04-17 Atomera Incorporated Single-Ended Sense Amplifiers And Methods For Operating Same

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9754664B2 (en) 2014-03-20 2017-09-05 Kabushiki Kaisha Toshiba Semiconductor memory

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