KR101050699B1 - 반도체 메모리 디바이스 - Google Patents

반도체 메모리 디바이스 Download PDF

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Publication number
KR101050699B1
KR101050699B1 KR1020090028220A KR20090028220A KR101050699B1 KR 101050699 B1 KR101050699 B1 KR 101050699B1 KR 1020090028220 A KR1020090028220 A KR 1020090028220A KR 20090028220 A KR20090028220 A KR 20090028220A KR 101050699 B1 KR101050699 B1 KR 101050699B1
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KR
South Korea
Prior art keywords
voltage
bit line
write
memory cell
sense amplifier
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Expired - Fee Related
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KR1020090028220A
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English (en)
Korean (ko)
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KR20090106346A (ko
Inventor
가즈히코 가지가야
소이치로 요시다
도모노리 세키구치
리이치로 다케무라
야스토시 야마다
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엘피다 메모리 가부시키가이샤
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Publication of KR20090106346A publication Critical patent/KR20090106346A/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/08—Control thereof

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
KR1020090028220A 2008-04-04 2009-04-01 반도체 메모리 디바이스 Expired - Fee Related KR101050699B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-098246 2008-04-04
JP2008098246 2008-04-04

Publications (2)

Publication Number Publication Date
KR20090106346A KR20090106346A (ko) 2009-10-08
KR101050699B1 true KR101050699B1 (ko) 2011-07-20

Family

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Family Applications (1)

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KR1020090028220A Expired - Fee Related KR101050699B1 (ko) 2008-04-04 2009-04-01 반도체 메모리 디바이스

Country Status (3)

Country Link
US (1) US7933141B2 (enExample)
JP (2) JP5566623B2 (enExample)
KR (1) KR101050699B1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6928026B2 (en) * 2002-03-19 2005-08-09 Broadcom Corporation Synchronous global controller for enhanced pipelining
KR101046556B1 (ko) * 2008-03-17 2011-07-05 엘피다 메모리 가부시키가이샤 단일 종단 감지 증폭기를 갖는 반도체 디바이스
KR101434400B1 (ko) * 2008-07-09 2014-08-27 삼성전자주식회사 불휘발성 메모리 장치 및 메모리 시스템 및 그것의 관리방법
JP5433187B2 (ja) * 2008-08-28 2014-03-05 ピーエスフォー ルクスコ エスエイアールエル 半導体記憶装置及びそのテスト方法
JP2011159365A (ja) * 2010-02-02 2011-08-18 Elpida Memory Inc 半導体装置及び半導体装置を含む情報処理システム
US8254195B2 (en) * 2010-06-01 2012-08-28 Qualcomm Incorporated High-speed sensing for resistive memories
JP2012123893A (ja) * 2010-11-19 2012-06-28 Elpida Memory Inc 半導体装置
US8406073B1 (en) * 2010-12-22 2013-03-26 Intel Corporation Hierarchical DRAM sensing
US8605528B2 (en) 2011-11-03 2013-12-10 International Business Machines Corporation Sense amplifier having an isolated pre-charge architecture, a memory circuit incorporating such a sense amplifier and associated methods
JP2013235624A (ja) * 2012-05-07 2013-11-21 Ps4 Luxco S A R L 半導体装置
US9310420B2 (en) * 2013-01-24 2016-04-12 Finisar Corporation Pixel test in a liquid crystal on silicon chip
US9093175B2 (en) 2013-03-27 2015-07-28 International Business Machines Corporation Signal margin centering for single-ended eDRAM sense amplifier
JP2015185179A (ja) 2014-03-20 2015-10-22 株式会社東芝 抵抗変化メモリ
KR102217243B1 (ko) 2014-10-28 2021-02-18 삼성전자주식회사 저항성 메모리 장치, 저항성 메모리 시스템 및 저항성 메모리 장치의 동작방법
KR20160117222A (ko) * 2015-03-30 2016-10-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 검사 방법
US9589604B1 (en) * 2015-09-17 2017-03-07 International Business Machines Corporation Single ended bitline current sense amplifier for SRAM applications
US9792967B1 (en) 2016-06-13 2017-10-17 International Business Machines Corporation Managing semiconductor memory array leakage current
US9786345B1 (en) 2016-09-16 2017-10-10 Micron Technology, Inc. Compensation for threshold voltage variation of memory cell components
CN109756204B (zh) * 2019-03-05 2023-11-14 广东合微集成电路技术有限公司 一种滤波器、振荡产生电路和电子器件
US10796734B1 (en) * 2019-05-24 2020-10-06 Micron Technology, Inc. Apparatuses including temperature-based threshold voltage compensated sense amplifiers and methods for compensating same
CN114121073B (zh) * 2020-08-27 2023-09-12 长鑫存储技术有限公司 存储器的调节方法、调节系统以及半导体器件
CN119207511B (zh) * 2023-06-20 2025-10-14 长鑫存储技术有限公司 存储器的控制方法、控制电路和存储器
US20250124971A1 (en) * 2023-12-28 2025-04-17 Atomera Incorporated Single-Ended Sense Amplifiers And Methods For Operating Same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990080731A (ko) * 1998-04-21 1999-11-15 김영환 특정 온도에서의 스탠바이 모드 전환 장치
KR20050065518A (ko) * 2002-08-08 2005-06-29 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 제어 유닛, 집적 회로 장치, 및 트랜지스터의 적어도하나의 임계 전압을 제어하는 방법

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JPS58168310A (ja) 1982-03-30 1983-10-04 Fujitsu Ltd 出力回路
EP0147968A3 (en) 1983-12-23 1986-09-17 General Motors Corporation Temperature compensated magnetic bubble memory
US4727269A (en) 1985-08-15 1988-02-23 Fairchild Camera & Instrument Corporation Temperature compensated sense amplifier
JPS63228496A (ja) * 1987-03-17 1988-09-22 Fujitsu Ltd メモリ回路
JPS6476495A (en) * 1987-09-17 1989-03-22 Matsushita Electric Industrial Co Ltd Semiconductor memory device
JPH04153977A (ja) * 1990-10-17 1992-05-27 Hitachi Ltd 半導体メモリ
JPH05242681A (ja) * 1992-02-28 1993-09-21 Toshiba Corp 半導体集積回路装置
JP3222235B2 (ja) 1992-12-28 2001-10-22 沖電気工業株式会社 センス回路
JPH06243678A (ja) 1993-02-19 1994-09-02 Hitachi Ltd ダイナミック型ｒａｍとそのプレート電圧設定方法及び情報処理システム
US5636170A (en) 1995-11-13 1997-06-03 Micron Technology, Inc. Low voltage dynamic memory
JPH11297084A (ja) * 1998-04-08 1999-10-29 Hitachi Ltd 半導体装置
JP4043703B2 (ja) * 2000-09-04 2008-02-06 株式会社ルネサステクノロジ 半導体装置、マイクロコンピュータ、及びフラッシュメモリ
US6868025B2 (en) 2003-03-10 2005-03-15 Sharp Laboratories Of America, Inc. Temperature compensated RRAM circuit
JP2005182873A (ja) 2003-12-17 2005-07-07 Seiko Epson Corp 半導体記憶装置
JP5400259B2 (ja) 2004-11-19 2014-01-29 ピーエスフォー ルクスコ エスエイアールエル 半導体記憶装置
JP2008059680A (ja) * 2006-08-31 2008-03-13 Hitachi Ltd 半導体装置
US7542343B1 (en) * 2007-09-21 2009-06-02 Juhan Kim Planar NAND flash memory
US7443714B1 (en) * 2007-10-23 2008-10-28 Juhan Kim DRAM including segment read circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990080731A (ko) * 1998-04-21 1999-11-15 김영환 특정 온도에서의 스탠바이 모드 전환 장치
KR20050065518A (ko) * 2002-08-08 2005-06-29 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 제어 유닛, 집적 회로 장치, 및 트랜지스터의 적어도하나의 임계 전압을 제어하는 방법

Also Published As

Publication number Publication date
JP2009266364A (ja) 2009-11-12
KR20090106346A (ko) 2009-10-08
US20090251948A1 (en) 2009-10-08
US7933141B2 (en) 2011-04-26
JP5566623B2 (ja) 2014-08-06
JP2014197447A (ja) 2014-10-16

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