JP4939838B2 - 記憶装置 - Google Patents

記憶装置 Download PDF

Info

Publication number
JP4939838B2
JP4939838B2 JP2006146646A JP2006146646A JP4939838B2 JP 4939838 B2 JP4939838 B2 JP 4939838B2 JP 2006146646 A JP2006146646 A JP 2006146646A JP 2006146646 A JP2006146646 A JP 2006146646A JP 4939838 B2 JP4939838 B2 JP 4939838B2
Authority
JP
Japan
Prior art keywords
layer
conductive layer
organic compound
memory
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006146646A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007013116A (ja
JP2007013116A5 (enExample
Inventor
利彦 齋藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2006146646A priority Critical patent/JP4939838B2/ja
Publication of JP2007013116A publication Critical patent/JP2007013116A/ja
Publication of JP2007013116A5 publication Critical patent/JP2007013116A5/ja
Application granted granted Critical
Publication of JP4939838B2 publication Critical patent/JP4939838B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Shift Register Type Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
JP2006146646A 2005-05-31 2006-05-26 記憶装置 Expired - Fee Related JP4939838B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006146646A JP4939838B2 (ja) 2005-05-31 2006-05-26 記憶装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005160343 2005-05-31
JP2005160343 2005-05-31
JP2006146646A JP4939838B2 (ja) 2005-05-31 2006-05-26 記憶装置

Publications (3)

Publication Number Publication Date
JP2007013116A JP2007013116A (ja) 2007-01-18
JP2007013116A5 JP2007013116A5 (enExample) 2009-06-18
JP4939838B2 true JP4939838B2 (ja) 2012-05-30

Family

ID=37751146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006146646A Expired - Fee Related JP4939838B2 (ja) 2005-05-31 2006-05-26 記憶装置

Country Status (1)

Country Link
JP (1) JP4939838B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010047288A1 (en) * 2008-10-24 2010-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductordevice
JP2011139052A (ja) 2009-12-04 2011-07-14 Semiconductor Energy Lab Co Ltd 半導体記憶装置
US9287405B2 (en) * 2011-10-13 2016-03-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor
EP4187604A4 (en) * 2020-10-12 2024-07-31 Murata Manufacturing Co., Ltd. VARIABLE ELECTRONIC ELEMENT AND CIRCUIT DEVICE

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2967126B2 (ja) * 1990-09-05 1999-10-25 セイコーインスツルメンツ株式会社 平板型光弁基板用半導体集積回路装置
JP3994634B2 (ja) * 2000-05-26 2007-10-24 松下電工株式会社 同軸コネクタプラグ
NO20015735D0 (no) * 2001-11-23 2001-11-23 Thin Film Electronics Asa Barrierelag
US7408218B2 (en) * 2001-12-14 2008-08-05 Renesas Technology Corporation Semiconductor device having plural dram memory cells and a logic circuit

Also Published As

Publication number Publication date
JP2007013116A (ja) 2007-01-18

Similar Documents

Publication Publication Date Title
CN1873998B (zh) 半导体器件及其制造方法
CN100576557C (zh) 半导体器件及其制造方法
JP5459916B2 (ja) 半導体装置
JP5268197B2 (ja) 半導体装置
KR101406770B1 (ko) 반도체 디바이스 및 이의 제작 방법
US7919861B2 (en) Semiconductor device and manufacturing method thereof
CN100565900C (zh) 半导体器件
JP5521006B2 (ja) 半導体装置
JP4939838B2 (ja) 記憶装置
JP5297591B2 (ja) 半導体装置
JP4954537B2 (ja) 半導体装置
JP2007005782A (ja) 半導体装置及び半導体装置の作製方法
JP4767653B2 (ja) 半導体装置及び無線チップ
JP4912671B2 (ja) 半導体装置
JP5190182B2 (ja) 半導体装置
JP5052055B2 (ja) 記憶装置及び半導体装置の作製方法
JP2008166420A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090427

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090427

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20111006

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111011

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111109

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120124

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120201

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120221

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120227

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150302

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150302

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees