JP5052055B2 - 記憶装置及び半導体装置の作製方法 - Google Patents
記憶装置及び半導体装置の作製方法 Download PDFInfo
- Publication number
- JP5052055B2 JP5052055B2 JP2006177572A JP2006177572A JP5052055B2 JP 5052055 B2 JP5052055 B2 JP 5052055B2 JP 2006177572 A JP2006177572 A JP 2006177572A JP 2006177572 A JP2006177572 A JP 2006177572A JP 5052055 B2 JP5052055 B2 JP 5052055B2
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- layer
- organic compound
- memory
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 245
- 239000004065 semiconductor Substances 0.000 title claims description 208
- 238000004519 manufacturing process Methods 0.000 title claims description 44
- 230000015654 memory Effects 0.000 claims description 270
- 150000002894 organic compounds Chemical class 0.000 claims description 217
- 229910052751 metal Inorganic materials 0.000 claims description 56
- 239000002184 metal Substances 0.000 claims description 56
- 238000004528 spin coating Methods 0.000 claims description 30
- 238000007639 printing Methods 0.000 claims description 24
- 230000002829 reductive effect Effects 0.000 claims description 23
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical class Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 claims description 22
- 238000007740 vapor deposition Methods 0.000 claims description 22
- 150000001768 cations Chemical class 0.000 claims description 15
- 238000003860 storage Methods 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 12
- 238000003618 dip coating Methods 0.000 claims description 8
- 238000007493 shaping process Methods 0.000 claims description 7
- 229920000547 conjugated polymer Polymers 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 874
- 239000000758 substrate Substances 0.000 description 124
- 239000000463 material Substances 0.000 description 82
- 230000015572 biosynthetic process Effects 0.000 description 50
- 239000010409 thin film Substances 0.000 description 35
- 239000010408 film Substances 0.000 description 34
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 30
- 239000012535 impurity Substances 0.000 description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 30
- 238000004544 sputter deposition Methods 0.000 description 30
- 229910052721 tungsten Inorganic materials 0.000 description 26
- 238000007650 screen-printing Methods 0.000 description 25
- 239000010937 tungsten Substances 0.000 description 25
- 229910052782 aluminium Inorganic materials 0.000 description 24
- 229910052814 silicon oxide Inorganic materials 0.000 description 24
- 229910052581 Si3N4 Inorganic materials 0.000 description 23
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 23
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 23
- 230000006870 function Effects 0.000 description 22
- 238000007646 gravure printing Methods 0.000 description 22
- 239000002356 single layer Substances 0.000 description 22
- 239000000956 alloy Substances 0.000 description 21
- 229910052750 molybdenum Inorganic materials 0.000 description 20
- 239000011733 molybdenum Substances 0.000 description 20
- 238000012545 processing Methods 0.000 description 20
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 19
- 239000011159 matrix material Substances 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 239000004020 conductor Substances 0.000 description 18
- 239000000203 mixture Substances 0.000 description 18
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 16
- 229910045601 alloy Inorganic materials 0.000 description 16
- 239000010936 titanium Substances 0.000 description 16
- 238000001704 evaporation Methods 0.000 description 15
- 239000010931 gold Substances 0.000 description 15
- -1 poly (phenylene vinylene) Polymers 0.000 description 15
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 239000011651 chromium Substances 0.000 description 12
- 229910052759 nickel Inorganic materials 0.000 description 12
- 229920005989 resin Polymers 0.000 description 12
- 239000011347 resin Substances 0.000 description 12
- 235000013305 food Nutrition 0.000 description 11
- 239000011368 organic material Substances 0.000 description 11
- 238000000206 photolithography Methods 0.000 description 11
- 238000000926 separation method Methods 0.000 description 11
- 238000002425 crystallisation Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 239000011777 magnesium Substances 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 10
- 229910052697 platinum Inorganic materials 0.000 description 10
- 229910052709 silver Inorganic materials 0.000 description 10
- 229910052719 titanium Inorganic materials 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 229910017052 cobalt Inorganic materials 0.000 description 9
- 239000010941 cobalt Substances 0.000 description 9
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 9
- 238000004891 communication Methods 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 238000007599 discharging Methods 0.000 description 8
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 8
- 229910010272 inorganic material Inorganic materials 0.000 description 8
- 239000011147 inorganic material Substances 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 7
- 230000005669 field effect Effects 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910044991 metal oxide Inorganic materials 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 7
- 229920003023 plastic Polymers 0.000 description 7
- 239000004033 plastic Substances 0.000 description 7
- 229920003002 synthetic resin Polymers 0.000 description 7
- 239000000057 synthetic resin Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 6
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 6
- 239000000872 buffer Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 230000036541 health Effects 0.000 description 6
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 238000006722 reduction reaction Methods 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- 229910001930 tungsten oxide Inorganic materials 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 5
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 5
- 239000004952 Polyamide Substances 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000003814 drug Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- 229920002647 polyamide Polymers 0.000 description 5
- 229920000123 polythiophene Polymers 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 241000894007 species Species 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 125000001424 substituent group Chemical group 0.000 description 5
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- 239000005407 aluminoborosilicate glass Substances 0.000 description 4
- 125000000129 anionic group Chemical group 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 239000005388 borosilicate glass Substances 0.000 description 4
- 229910052793 cadmium Inorganic materials 0.000 description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229940079593 drug Drugs 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 4
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 150000001450 anions Chemical class 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 238000005499 laser crystallization Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229920000767 polyaniline Polymers 0.000 description 3
- 229920000128 polypyrrole Polymers 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- SIJHJHYRYHIWFW-UHFFFAOYSA-N 1,3,6,8-tetraphenylpyrene Chemical compound C1=CC=CC=C1C(C1=CC=C23)=CC(C=4C=CC=CC=4)=C(C=C4)C1=C2C4=C(C=1C=CC=CC=1)C=C3C1=CC=CC=C1 SIJHJHYRYHIWFW-UHFFFAOYSA-N 0.000 description 2
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical group C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 2
- XWSSEFVXKFFWLJ-UHFFFAOYSA-N 1-anthracen-1-ylanthracene Chemical group C1=CC=C2C=C3C(C=4C5=CC6=CC=CC=C6C=C5C=CC=4)=CC=CC3=CC2=C1 XWSSEFVXKFFWLJ-UHFFFAOYSA-N 0.000 description 2
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 2
- UOCMXZLNHQBBOS-UHFFFAOYSA-N 2-(1,3-benzoxazol-2-yl)phenol zinc Chemical compound [Zn].Oc1ccccc1-c1nc2ccccc2o1.Oc1ccccc1-c1nc2ccccc2o1 UOCMXZLNHQBBOS-UHFFFAOYSA-N 0.000 description 2
- PZLZJGZGJHZQAU-UHFFFAOYSA-N 3-(4-tert-butylphenyl)-4-(4-ethylphenyl)-5-(4-phenylphenyl)-1,2,4-triazole Chemical compound C1=CC(CC)=CC=C1N1C(C=2C=CC(=CC=2)C(C)(C)C)=NN=C1C1=CC=C(C=2C=CC=CC=2)C=C1 PZLZJGZGJHZQAU-UHFFFAOYSA-N 0.000 description 2
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 2
- VIZUPBYFLORCRA-UHFFFAOYSA-N 9,10-dinaphthalen-2-ylanthracene Chemical compound C12=CC=CC=C2C(C2=CC3=CC=CC=C3C=C2)=C(C=CC=C2)C2=C1C1=CC=C(C=CC=C2)C2=C1 VIZUPBYFLORCRA-UHFFFAOYSA-N 0.000 description 2
- FCNCGHJSNVOIKE-UHFFFAOYSA-N 9,10-diphenylanthracene Chemical compound C1=CC=CC=C1C(C1=CC=CC=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 FCNCGHJSNVOIKE-UHFFFAOYSA-N 0.000 description 2
- VFUDMQLBKNMONU-UHFFFAOYSA-N 9-[4-(4-carbazol-9-ylphenyl)phenyl]carbazole Chemical group C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 VFUDMQLBKNMONU-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 241001465754 Metazoa Species 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 150000001454 anthracenes Chemical class 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- GQVWHWAWLPCBHB-UHFFFAOYSA-L beryllium;benzo[h]quinolin-10-olate Chemical compound [Be+2].C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21.C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21 GQVWHWAWLPCBHB-UHFFFAOYSA-L 0.000 description 2
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 2
- 230000036760 body temperature Effects 0.000 description 2
- 150000001716 carbazoles Chemical class 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 238000004770 highest occupied molecular orbital Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 244000144972 livestock Species 0.000 description 2
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000005486 organic electrolyte Substances 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 150000007978 oxazole derivatives Chemical class 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 150000005041 phenanthrolines Chemical class 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229920000548 poly(silane) polymer Polymers 0.000 description 2
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920002098 polyfluorene Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 150000003220 pyrenes Chemical class 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 235000021286 stilbenes Nutrition 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- GWDUZCIBPDVBJM-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzothiazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1 GWDUZCIBPDVBJM-UHFFFAOYSA-L 0.000 description 2
- QEPMORHSGFRDLW-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzoxazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1 QEPMORHSGFRDLW-UHFFFAOYSA-L 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 239000003905 agrochemical Substances 0.000 description 1
- 125000005376 alkyl siloxane group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 235000013361 beverage Nutrition 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000036772 blood pressure Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010017 direct printing Methods 0.000 description 1
- 201000010099 disease Diseases 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000002657 fibrous material Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002751 molybdenum Chemical class 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Landscapes
- Semiconductor Memories (AREA)
Description
本実施の形態では、二つの導電層の間に有機化合物が設置された記憶装置(以下、記憶回路または有機メモリとも記す)の一構成例に関して図面を用いて説明する。
本実施の形態では、記憶素子部に有機化合物層を含んだ記憶回路の一構成例に関して図面を用いて説明する。より具体的には、記憶回路の構成がパッシブマトリクス型の場合に関して示す。
本実施の形態では、上記実施の形態2とは異なる構成を有する記憶回路および半導体装置について説明する。具体的には、記憶回路の構成がアクティブマトリクス型の場合に関して示す。
本実施の形態では、上記実施の形態とは異なる半導体装置の一例に関して図面を用いて説明する。
(実施の形態5)
本実施の形態では、薄膜トランジスタ、記憶素子及びアンテナを含む本発明の半導体装置の作製方法について、図面を参照して説明する。
(実施の形態6)
本実施の形態では、上記実施の形態と異なる半導体装置の作製方法に関して説明する。
本実施の形態では、上記実施の形態で示した半導体装置を表示装置に適用した場合に関して図面を用いて説明する。
本実施の形態では、無線チップ等の非接触でデータの送受信が可能な本発明の半導体装置に関して図23を用いて説明する。
本実施の形態では、上記構成において、温度や圧力等の各種情報を測定可能なセンサを設けた半導体装置に関して図24を用いて説明する。
本実施の形態では、上記構成を有する半導体装置において、電気的作用により、データの読み出しを行う際の動作について説明する。
本発明の半導体装置の用途は広範にわたるが、例えば、情報を記憶して表示する電子機器に用いることができる。電子機器として、例えば液晶表示装置、EL表示装置、テレビジョン装置、携帯電話をはじめとする携帯情報端末、プリンター、カメラ、パーソナルコンピュータ、イヤホン付ゴーグル、スピーカ装置、ヘッドホン、ナビゲーション装置、ETC用車載器、又は電子鍵等に利用することができる。本発明の半導体装置を携帯電話に適用した場合に関して図26を用いて説明する。
Claims (10)
- 第1の導電層と、第2の導電層と、前記第1の導電層と前記第2の導電層との間に有機化合物を含む層とを有する記憶素子を有し、
前記第1の導電層と前記第2の導電層との間に電流を流すと、前記有機化合物が還元され、前記第1の導電層または前記第2の導電層が酸化されて一部がイオン化する記憶装置の作製方法であって、
前記第1の導電層上に、前記有機化合物を含む層を蒸着法、スピンコート法、インクジェット法、ディップコーティング法または印刷法を用いて形成し、
前記第1の導電層の標準電位が、飽和カロメル電極を基準として−3.0V以上、且つ、+0.8V以下であり、前記第2の導電層の標準電位が、飽和カロメル電極を基準として+0.8V以上であり、
前記有機化合物を含む層上に前記第2の導電層を形成することを特徴とする記憶装置の作製方法。 - 第1の導電層と、第2の導電層と、前記第1の導電層と前記第2の導電層との間に少なくとも一種類の有機化合物を含む層とを有する記憶素子を有し、
前記有機化合物には金属陽イオンが存在し、
前記第1の導電層と前記第2の導電層との間に電流を通すと、前記有機化合物が酸化されると共に、前記金属陽イオンが還元される記憶装置の作製方法であって、
前記第1の導電層上に、前記有機化合物を含む層を蒸着法、スピンコート法、インクジェット法、ディップコーティング法または印刷法を用いて形成し、
前記第1の導電層の標準電位が、飽和カロメル電極を基準として−3.0V以上、且つ、+0.8V以下であり、前記第2の導電層の標準電位が、飽和カロメル電極を基準として+0.8V以上であり、
前記有機化合物を含む層上に前記第2の導電層を形成することを特徴とする記憶装置の作製方法。 - 請求項1または請求項2において、
前記記憶装置は、第1の方向に延びた複数のビット線と、前記第1の方向と垂直な第2の方向に延びた複数のワード線を有することを特徴とする記憶装置の作製方法。 - 請求項1乃至請求項3のいずれか一において、
前記有機化合物は、共役高分子であることを特徴とする記憶装置の作製方法。 - 請求項1乃至請求項4のいずれか一において、
前記記憶装置は、前記有機化合物を有する発光素子を有し、
前記記憶素子と前記発光素子の構造は同じまたはほぼ同じことを特徴とする記憶装置の作製方法。 - 第1の導電層と、第2の導電層と、前記第1の導電層と前記第2の導電層との間に少なくとも一種類の有機化合物を含む層とを有する記憶素子と、トランジスタとを有し、
前記トランジスタのソース領域またはドレイン領域は、前記第1の導電層または第2の導電層と電気的に接続し、
前記第1の導電層と前記第2の導電層との間に電流を流すと、前記有機化合物が還元され、前記第1の導電層または前記第2の導電層が酸化されて一部がイオン化することを特徴とする半導体装置の作製方法であって、
前記第1の導電層上に、前記有機化合物を含む層を蒸着法、スピンコート法、インクジェット法、ディップコーティング法または印刷法を用いて形成し、
前記第1の導電層の標準電位が、飽和カロメル電極を基準として−3.0V以上、且つ、+0.8V以下であり、前記第2の導電層の標準電位が、飽和カロメル電極を基準として+0.8V以上であり、
前記有機化合物を含む層上に前記第2の導電層を形成することを特徴とする半導体装置の作製方法。 - 第1の導電層と、第2の導電層と、前記第1の導電層と前記第2の導電層との間に少なくとも一種類の有機化合物を含む層とを有する記憶素子と、トランジスタとを有し、
前記トランジスタのソース領域またはドレイン領域は、前記第1の導電層または第2の導電層と電気的に接続し、
前記有機化合物には金属陽イオンが存在し、
前記第1の導電層と前記第2の導電層との間に電流を通すと、前記有機化合物が酸化されると共に、前記金属陽イオンが還元されることを特徴とする半導体装置の作製方法であって、
前記第1の導電層上に、前記有機化合物を含む層を蒸着法、スピンコート法、インクジェット法、ディップコーティング法または印刷法を用いて形成し、
前記第1の導電層の標準電位が、飽和カロメル電極を基準として−3.0V以上、且つ、+0.8V以下であり、前記第2の導電層の標準電位が、飽和カロメル電極を基準として+0.8V以上であり、
前記有機化合物を含む層上に前記第2の導電層を形成することを特徴とする半導体装置の作製方法。 - 請求項6または請求項7において、
前記半導体装置は、アンテナを有し、該アンテナは波形整形回路または整流回路の一部を構成するトランジスタと電気的に接続していることを特徴とする半導体装置の作製方法。 - 請求項6乃至請求項8のいずれか一において、
前記有機化合物は、共役高分子であることを特徴とする半導体装置の作製方法。 - 請求項6乃至請求項9のいずれか一において、
前記半導体装置は、有機化合物を有する発光素子を有し、
前記記憶素子と前記発光素子の構造は同じまたはほぼ同じことを特徴とする半導体装置の作製方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006177572A JP5052055B2 (ja) | 2005-07-01 | 2006-06-28 | 記憶装置及び半導体装置の作製方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005194077 | 2005-07-01 | ||
JP2005194077 | 2005-07-01 | ||
JP2006177572A JP5052055B2 (ja) | 2005-07-01 | 2006-06-28 | 記憶装置及び半導体装置の作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007043111A JP2007043111A (ja) | 2007-02-15 |
JP2007043111A5 JP2007043111A5 (ja) | 2009-08-06 |
JP5052055B2 true JP5052055B2 (ja) | 2012-10-17 |
Family
ID=37800758
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006177572A Expired - Fee Related JP5052055B2 (ja) | 2005-07-01 | 2006-06-28 | 記憶装置及び半導体装置の作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5052055B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101305143B1 (ko) | 2011-08-04 | 2013-09-12 | 동국대학교 산학협력단 | 음식물 상태 표시 장치 및 방법 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0628841A (ja) * | 1992-07-08 | 1994-02-04 | Makoto Yano | 化学反応を利用した記憶素子 |
JP2003229538A (ja) * | 2002-02-05 | 2003-08-15 | Matsushita Electric Ind Co Ltd | 不揮発メモリとその製造方法 |
US6870183B2 (en) * | 2002-11-04 | 2005-03-22 | Advanced Micro Devices, Inc. | Stacked organic memory devices and methods of operating and fabricating |
US7015504B2 (en) * | 2003-11-03 | 2006-03-21 | Advanced Micro Devices, Inc. | Sidewall formation for high density polymer memory element array |
-
2006
- 2006-06-28 JP JP2006177572A patent/JP5052055B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2007043111A (ja) | 2007-02-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7660145B2 (en) | Storage device and semiconductor device | |
US8295104B2 (en) | Semiconductor device | |
US7622736B2 (en) | Semiconductor device and method for manufacturing the same | |
JP5268197B2 (ja) | 半導体装置 | |
US8647942B2 (en) | Semiconductor device and manufacturing method thereof | |
KR101169262B1 (ko) | 반도체 장치 | |
US8227851B2 (en) | Semiconductor device | |
EP1886344B1 (en) | Memory element and semiconductor device | |
JP4758274B2 (ja) | 記憶素子および半導体装置 | |
JP5100012B2 (ja) | 半導体装置及びその作製方法 | |
JP4954540B2 (ja) | 半導体装置 | |
JP5052055B2 (ja) | 記憶装置及び半導体装置の作製方法 | |
JP4767653B2 (ja) | 半導体装置及び無線チップ | |
JP4912671B2 (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090623 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090623 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120202 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120207 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120215 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120529 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120626 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120717 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120724 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150803 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150803 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |