KR900010998A - 반도체 집적회로 장치 - Google Patents

반도체 집적회로 장치 Download PDF

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Publication number
KR900010998A
KR900010998A KR1019890018560A KR890018560A KR900010998A KR 900010998 A KR900010998 A KR 900010998A KR 1019890018560 A KR1019890018560 A KR 1019890018560A KR 890018560 A KR890018560 A KR 890018560A KR 900010998 A KR900010998 A KR 900010998A
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KR
South Korea
Prior art keywords
integrated circuit
semiconductor integrated
conductive layer
basic cell
lines
Prior art date
Application number
KR1019890018560A
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English (en)
Other versions
KR930009024B1 (ko
Inventor
마고토 노나
가즈히로 수다
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
다케다이 마사다카
도시바 마이크로 일렉트로닉스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 아오이 죠이치, 가부시키가이샤 도시바, 다케다이 마사다카, 도시바 마이크로 일렉트로닉스 가부시키가이샤 filed Critical 아오이 죠이치
Publication of KR900010998A publication Critical patent/KR900010998A/ko
Application granted granted Critical
Publication of KR930009024B1 publication Critical patent/KR930009024B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5286—Arrangements of power or ground buses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Geometry (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용 없음

Description

반도체 집적회로 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 반도체 집적회로장치의 1실시예를 도시한 평면도, 제2도는 제1도의 장치를 입체적으로 도시한 도면, 제3도는 제1도를 모시적으로 도시한 도면.

Claims (2)

  1. 소정의 단위논리기능을 갖춘 기본셀과 이들 기본셀을 접속시키는 접속배선부를 구비한 기본셀방식의 반도체집적회로 장체에 있어서, 기본셀렬(11a,11b)내부의 제1전원선(13a,13b)과 기본셀렬(11a,11b)간의 배선영역의 제1신호선(15a,15b)을 제1방향으로 제1도전체층을 이용하여 형성하고, 기본셀렬군의 전원간선으로 작용하는 제2전원선(20a,20b)과 기본셀렬(11a,11b)상을 통과할 수 있는 제2신호선(14a,14b)을 제2방향으로 제2도 전체층을 이용하여 형성하며, 상기 기본셀렬(11a,11b)의 제3전원선(22a,22b)을 제1방향으로 제3도전체층을 이용하여 형성하며, 상기 기본셀렬(11a,11b)의 양단부에서 상기 제1도전체층과 제2도전체층을 접속시키며, 적어도 기본셀렬(11a,11b)의 중앙부에서 상기 제1도전체층과 제3도전체층을 접속시켜서 구성한 것을 특징으로 하는 반도체집적회로장치.
  2. 제1항에 있어서, 제3신호선을 제1방향으로 제3도전체층으로 이용하여 형성한 것을 특징으로 하는 반도체집적회로장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890018560A 1988-12-20 1989-12-14 반도체 집적회로장치 KR930009024B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP88-321147 1988-12-20
JP63321147A JPH0727968B2 (ja) 1988-12-20 1988-12-20 半導体集積回路装置
JP63-321147 1988-12-20

Publications (2)

Publication Number Publication Date
KR900010998A true KR900010998A (ko) 1990-07-11
KR930009024B1 KR930009024B1 (ko) 1993-09-18

Family

ID=18129327

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890018560A KR930009024B1 (ko) 1988-12-20 1989-12-14 반도체 집적회로장치

Country Status (5)

Country Link
US (1) US5095352A (ko)
EP (1) EP0374842B1 (ko)
JP (1) JPH0727968B2 (ko)
KR (1) KR930009024B1 (ko)
DE (1) DE68924967T2 (ko)

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* Cited by examiner, † Cited by third party
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JP3031966B2 (ja) * 1990-07-02 2000-04-10 株式会社東芝 集積回路装置
JP3027990B2 (ja) * 1991-03-18 2000-04-04 富士通株式会社 半導体装置の製造方法
DE4135654A1 (de) * 1991-10-29 2003-03-27 Lockheed Corp Dichtgepackte Verbindungsstruktur, die eine Abstandshalterstruktur und einen Zwischenraum enthält
JP3052519B2 (ja) * 1992-01-14 2000-06-12 日本電気株式会社 集積回路の電源配線設計方法
JPH0722583A (ja) * 1992-12-15 1995-01-24 Internatl Business Mach Corp <Ibm> 多層回路装置
JP2826446B2 (ja) * 1992-12-18 1998-11-18 三菱電機株式会社 半導体集積回路装置及びその設計方法
US5723908A (en) * 1993-03-11 1998-03-03 Kabushiki Kaisha Toshiba Multilayer wiring structure
US5539227A (en) * 1993-11-24 1996-07-23 Mitsubishi Denki Kabushiki Kaisha Multi-layer wiring
US5497027A (en) * 1993-11-30 1996-03-05 At&T Global Information Solutions Company Multi-chip module packaging system
US5663677A (en) * 1995-03-30 1997-09-02 Lucent Technologies Inc. Integrated circuit multi-level interconnection technique
US5723883A (en) * 1995-11-14 1998-03-03 In-Chip Gate array cell architecture and routing scheme
US5894142A (en) * 1996-12-11 1999-04-13 Hewlett-Packard Company Routing for integrated circuits
US6229161B1 (en) 1998-06-05 2001-05-08 Stanford University Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches
US6331733B1 (en) 1999-08-10 2001-12-18 Easic Corporation Semiconductor device
US6308309B1 (en) * 1999-08-13 2001-10-23 Xilinx, Inc. Place-holding library elements for defining routing paths
US6625787B1 (en) 1999-08-13 2003-09-23 Xilinx, Inc. Method and apparatus for timing management in a converted design
US6574711B2 (en) 1999-12-27 2003-06-03 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit
JP3390408B2 (ja) * 2000-05-29 2003-03-24 エヌイーシーマイクロシステム株式会社 半導体集積回路
US6396149B1 (en) * 2000-06-13 2002-05-28 Sun Microsystems, Inc. Method for double-layer implementation of metal options in an integrated chip for efficient silicon debug
US6502231B1 (en) 2001-05-31 2002-12-31 Applied Micro Circuits Corporation Integrated circuit template cell system and method
US7161226B2 (en) * 2003-10-20 2007-01-09 Industrial Technology Research Institute Multi-layered complementary wire structure and manufacturing method thereof
JP2008103610A (ja) * 2006-10-20 2008-05-01 Matsushita Electric Ind Co Ltd 半導体集積回路の配線構造およびその設計方法と設計装置
US20090166843A1 (en) 2007-12-27 2009-07-02 Infineon Technologies Ag Semiconductor device and method for manufacturing a semiconductor device
TWI376615B (en) * 2008-01-30 2012-11-11 Realtek Semiconductor Corp Power mesh managing method utilized in an integrated circuit
US8421205B2 (en) 2010-05-06 2013-04-16 Taiwan Semiconductor Manufacturing Company, Ltd. Power layout for integrated circuits
US9070552B1 (en) * 2014-05-01 2015-06-30 Qualcomm Incorporated Adaptive standard cell architecture and layout techniques for low area digital SoC
US9496174B2 (en) * 2014-07-24 2016-11-15 Qualcomm Incorporated Mitigating electromigration, in-rush current effects, IR-voltage drop, and jitter through metal line and via matrix insertion
US10658292B2 (en) * 2017-04-24 2020-05-19 Taiwan Semiconductor Manufacturing Company Limited Metal patterning for internal cell routing
US11347925B2 (en) * 2017-05-01 2022-05-31 Advanced Micro Devices, Inc. Power grid architecture and optimization with EUV lithography

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US3808475A (en) * 1972-07-10 1974-04-30 Amdahl Corp Lsi chip construction and method
JPS5837953A (ja) * 1981-08-31 1983-03-05 Toshiba Corp 積層半導体集積回路装置
JPS5890740A (ja) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp 半導体装置
JPS59111344A (ja) * 1982-12-17 1984-06-27 Nippon Telegr & Teleph Corp <Ntt> 多層配線構造
JPS61156751A (ja) * 1984-12-28 1986-07-16 Fujitsu Ltd 半導体集積回路
DE3586385T2 (de) * 1984-10-03 1993-01-07 Fujitsu Ltd Integrierte gate-matrixstruktur.

Also Published As

Publication number Publication date
JPH02165652A (ja) 1990-06-26
EP0374842A2 (en) 1990-06-27
US5095352A (en) 1992-03-10
DE68924967D1 (de) 1996-01-11
JPH0727968B2 (ja) 1995-03-29
KR930009024B1 (ko) 1993-09-18
DE68924967T2 (de) 1996-05-15
EP0374842A3 (en) 1990-08-01
EP0374842B1 (en) 1995-11-29

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