KR860007787A - 반도체 집적회로 장치 - Google Patents

반도체 집적회로 장치 Download PDF

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Publication number
KR860007787A
KR860007787A KR1019860000019A KR860000019A KR860007787A KR 860007787 A KR860007787 A KR 860007787A KR 1019860000019 A KR1019860000019 A KR 1019860000019A KR 860000019 A KR860000019 A KR 860000019A KR 860007787 A KR860007787 A KR 860007787A
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South Korea
Prior art keywords
circuit
input
semiconductor integrated
elements
integrated circuit
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KR1019860000019A
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English (en)
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KR930011706B1 (ko
Inventor
야스나가 스즈끼
야스나가 스즈기
바라 도시아끼 마쯔
도시야기 마즈바라
아끼라 우라가미
야기라 우라가미
Original Assignee
가부시끼가이샤 히다찌세이사꾸쇼
미쓰다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
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Publication of KR860007787A publication Critical patent/KR860007787A/ko
Application granted granted Critical
Publication of KR930011706B1 publication Critical patent/KR930011706B1/ko

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H03K19/17748—Structural details of configuration resources
    • H03K19/17764—Structural details of configuration resources for reliability
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11898—Input and output buffer/driver structures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H03K19/17736—Structural details of routing resources
    • H03K19/17744—Structural details of routing resources for input/output signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H03K19/1778—Structural details for adapting physical parameters

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용없음

Description

반도체 집적회로 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명의 1실시예인 게이트 아레이의 평면 레이아우트도.
제4도는 제3도에 있어서의 파선으로 둘러쌓여진 바파부 2의 알미늄 배선을 실시하기전의 상태를 도시한 회로도
제5도는, 제4도에 있어서의 바파부 2의 알미늄 배선을 실시한 후의 상태를 도시한 회로도

Claims (9)

  1. 다음으로 구성되는 반도체 집적회로 장치, 적어도 1개의 바파부분. 1개의 바파부분은 한쌍의 입력 바파부분과 출력 바파부분을 포함한다. 상기 입력 바파부분은 입력회로를 구성하기 위한 회로요소를 가지고, 또 상기 출력바파부분은 출력회로를 구성하기 위한 회로요소를 가진다. 입력회로를 구성하기 위한 상기 회로요소를 전기적으로 접속해서 형성된 입력회로, 상기 입력회로는 입력 보호회로를 가지고, 그 입력보호 회로는 상기 출력회로를 구성하기 위한 회로요소를 이용해서 구성되어 있다.
  2. 특허청구의 범위 제1항 기재의 반도체 집적회로 장치에 있어서, 1개의 바파부분에 있어서, 입력회로와 출력회로는, 어느 쪽이든 한쪽이 선택적으로 구성된다.
  3. 특허청구의 범위 제2항 기재의 반도체 집적회로 장치에 있어서, 1개의 바파부분에 대응해서 1개의 본딩패드가 마련되어 있다..
  4. 특허청구의 범위 제1항 기재의 반도체 집적회로 장치에 있어서, 상기 입력 및 출력회로를 구성하는 회로요소는 바이포라소자 및 MIS(Metal Insulator Semiconductor)소자를 포함하고, 상기 입력회로에 있어서의 입력보호회로는 바이포라 소자와 MIS소자를 이용해서 구성되어 있다.
  5. 특허청구의 범위 제1항 기재의 반도체 집적회로 장치에 있어서, 상기 입력 및 출력회로를 구성하는 회로요소는 바이포라소자 및 MIS 소자를 포함하고, 상기 입력회로에 있어서의 입력보호회로는 바이포라 소자를 이용해서 구성되어 있다.
  6. 특허청구의 범위 제1항 기재의 반도체 집적회로 장치에 있어서, 다음을 더 포함해서 구성된다. 로직회로 부분, 그 로직회로 부분은 여러 가지 유니트셀로 되고, 그 유니트셀은 기본 게이트회로를 다수 사용해서 구성되어 있다.
  7. 특허청구의 범위 제6항 기재의 반도체 집적회로 장치에 있어서, 기본 게이트회로는 소정의 회로구성 요소를 가지는 1개의 베이직셀에 배선을 실시하는 것에 의해서 형성되고 상기 유니드셀은 그의 기본 게이트회로 사이를 배선에 의해서 접속하는 것에 의해서 구성되어 있다.
  8. 특허청구의 범위 제6항 기재의 반도체 집적회로 장치에 있어서, 유니트셀은 바이포라 소자와 MIS 소자를 포함하는 복합기본 게이트를 다수개 사용해서 구성되고, 상기 입력회로 또는 출력회로는 바이포라소자 및 MIS 소자를 포함하는 복합회로이다.
  9. 특허청구의 범위 제7항 기재의 반도체 집적회로 장치에 있어서, 반도체 집적회로 장치는 게이트 아레이이다.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860000019A 1985-03-25 1986-01-07 반도체 집적 회로장치 KR930011706B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP85-58366 1985-03-25
JP60058366A JPS61218143A (ja) 1985-03-25 1985-03-25 半導体集積回路装置
JP60-58366 1985-03-25

Publications (2)

Publication Number Publication Date
KR860007787A true KR860007787A (ko) 1986-10-17
KR930011706B1 KR930011706B1 (ko) 1993-12-18

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KR1019860000019A KR930011706B1 (ko) 1985-03-25 1986-01-07 반도체 집적 회로장치

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US (3) US4710842A (ko)
JP (1) JPS61218143A (ko)
KR (1) KR930011706B1 (ko)

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Publication number Publication date
KR930011706B1 (ko) 1993-12-18
JPS61218143A (ja) 1986-09-27
US4710842A (en) 1987-12-01
US5053909A (en) 1991-10-01
US4827368A (en) 1989-05-02

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