KR100348185B1 - 반도체장치및그제조방법 - Google Patents

반도체장치및그제조방법 Download PDF

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Publication number
KR100348185B1
KR100348185B1 KR1019970072508A KR19970072508A KR100348185B1 KR 100348185 B1 KR100348185 B1 KR 100348185B1 KR 1019970072508 A KR1019970072508 A KR 1019970072508A KR 19970072508 A KR19970072508 A KR 19970072508A KR 100348185 B1 KR100348185 B1 KR 100348185B1
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KR
South Korea
Prior art keywords
memory cell
film
wiring
memory
gnd
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Expired - Fee Related
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KR1019970072508A
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English (en)
Korean (ko)
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KR19990013268A (ko
Inventor
요시유끼 이시가끼
히로끼 혼다
Original Assignee
미쓰비시덴키 가부시키가이샤
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Publication of KR19990013268A publication Critical patent/KR19990013268A/ko
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors

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  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019970072508A 1997-07-03 1997-12-23 반도체장치및그제조방법 Expired - Fee Related KR100348185B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP97-178401 1997-07-03
JP9178401A JPH1126604A (ja) 1997-07-03 1997-07-03 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
KR19990013268A KR19990013268A (ko) 1999-02-25
KR100348185B1 true KR100348185B1 (ko) 2002-09-18

Family

ID=16047863

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970072508A Expired - Fee Related KR100348185B1 (ko) 1997-07-03 1997-12-23 반도체장치및그제조방법

Country Status (5)

Country Link
US (1) US6271569B1 (enExample)
JP (1) JPH1126604A (enExample)
KR (1) KR100348185B1 (enExample)
DE (1) DE19750895C2 (enExample)
TW (1) TW353805B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100248205B1 (ko) * 1997-06-25 2000-03-15 김영환 반도체 메모리 디바이스 및 그 형성방법
JP4009810B2 (ja) * 2000-04-11 2007-11-21 セイコーエプソン株式会社 半導体記憶装置
JP4000436B2 (ja) * 2000-04-27 2007-10-31 セイコーエプソン株式会社 半導体記憶装置
JP4056392B2 (ja) 2001-01-30 2008-03-05 株式会社ルネサステクノロジ 半導体集積回路装置
JP4535506B2 (ja) * 2001-01-30 2010-09-01 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP2004200598A (ja) * 2002-12-20 2004-07-15 Renesas Technology Corp 半導体記憶装置および半導体装置
JP2004253730A (ja) 2003-02-21 2004-09-09 Renesas Technology Corp 半導体集積回路装置およびその製造方法
JP4570352B2 (ja) * 2003-12-16 2010-10-27 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US20080272408A1 (en) * 2007-05-01 2008-11-06 Dsm Solutions, Inc. Active area junction isolation structure and junction isolated transistors including igfet, jfet and mos transistors and method for making
JP2009044183A (ja) * 2008-10-24 2009-02-26 Renesas Technology Corp 半導体集積回路装置およびその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0212963A (ja) * 1988-06-30 1990-01-17 Nec Corp 半導体記憶装置
JPH0774270A (ja) * 1993-08-13 1995-03-17 Nec Corp スタティック形半導体記憶装置
JPH07130879A (ja) * 1993-10-29 1995-05-19 Mitsubishi Electric Corp 半導体記憶装置
JPH08236643A (ja) * 1995-02-28 1996-09-13 Nec Corp スタティック型メモリセル

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58148453A (ja) 1982-02-26 1983-09-03 Mitsubishi Electric Corp 半導体装置
JPH0682801B2 (ja) * 1983-12-23 1994-10-19 株式会社日立製作所 半導体記憶装置とそのレイアウト方法
JP2559360B2 (ja) * 1984-11-28 1996-12-04 株式会社日立製作所 半導体メモリ装置
JPH0685431B2 (ja) 1985-06-10 1994-10-26 株式会社日立製作所 半導体装置
US5132771A (en) * 1985-12-27 1992-07-21 Hitachi, Ltd. Semiconductor memory device having flip-flop circuits
JP3089638B2 (ja) 1989-11-16 2000-09-18 ソニー株式会社 半導体メモリ装置
JPH04162668A (ja) * 1990-10-26 1992-06-08 Hitachi Ltd 半導体装置およびその製造方法
JP3328971B2 (ja) 1992-11-06 2002-09-30 ソニー株式会社 スタティックｒａｍ
KR100305123B1 (ko) * 1992-12-11 2001-11-22 비센트 비.인그라시아, 알크 엠 아헨 정적랜덤액세스메모리셀및이를포함하는반도체장치
JP3157969B2 (ja) 1993-11-29 2001-04-23 京セラ株式会社 弾性表面波素子の製造方法
JPH08195445A (ja) 1995-01-17 1996-07-30 Sony Corp 半導体メモリ装置
JPH08250605A (ja) 1995-03-07 1996-09-27 Hitachi Ltd 半導体集積回路装置
JP3400894B2 (ja) * 1995-07-14 2003-04-28 三菱電機株式会社 スタティック型半導体記憶装置
US5808941A (en) * 1996-01-04 1998-09-15 Micron Technology, Inc. SRAM cell employing substantially vertically elongated pull-up resistors

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0212963A (ja) * 1988-06-30 1990-01-17 Nec Corp 半導体記憶装置
JPH0774270A (ja) * 1993-08-13 1995-03-17 Nec Corp スタティック形半導体記憶装置
JPH07130879A (ja) * 1993-10-29 1995-05-19 Mitsubishi Electric Corp 半導体記憶装置
JPH08236643A (ja) * 1995-02-28 1996-09-13 Nec Corp スタティック型メモリセル

Also Published As

Publication number Publication date
DE19750895A1 (de) 1999-01-07
US6271569B1 (en) 2001-08-07
KR19990013268A (ko) 1999-02-25
DE19750895C2 (de) 2002-01-24
JPH1126604A (ja) 1999-01-29
TW353805B (en) 1999-03-01

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