JPH1126604A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JPH1126604A
JPH1126604A JP9178401A JP17840197A JPH1126604A JP H1126604 A JPH1126604 A JP H1126604A JP 9178401 A JP9178401 A JP 9178401A JP 17840197 A JP17840197 A JP 17840197A JP H1126604 A JPH1126604 A JP H1126604A
Authority
JP
Japan
Prior art keywords
wiring layer
layer
semiconductor device
thickness
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9178401A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1126604A5 (enExample
Inventor
Yoshiyuki Ishigaki
佳之 石垣
Hiromi Honda
裕己 本田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9178401A priority Critical patent/JPH1126604A/ja
Priority to TW086115740A priority patent/TW353805B/zh
Priority to DE19750895A priority patent/DE19750895C2/de
Priority to KR1019970072508A priority patent/KR100348185B1/ko
Priority to US09/008,594 priority patent/US6271569B1/en
Publication of JPH1126604A publication Critical patent/JPH1126604A/ja
Publication of JPH1126604A5 publication Critical patent/JPH1126604A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP9178401A 1997-07-03 1997-07-03 半導体装置およびその製造方法 Pending JPH1126604A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP9178401A JPH1126604A (ja) 1997-07-03 1997-07-03 半導体装置およびその製造方法
TW086115740A TW353805B (en) 1997-07-03 1997-10-22 Semiconductor device and its manufacturing method
DE19750895A DE19750895C2 (de) 1997-07-03 1997-11-17 Halbleitereinrichtung mit Speicherzellen und Herstellungsverfahren derselben
KR1019970072508A KR100348185B1 (ko) 1997-07-03 1997-12-23 반도체장치및그제조방법
US09/008,594 US6271569B1 (en) 1997-07-03 1998-01-16 Semiconductor device having memory cells and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9178401A JPH1126604A (ja) 1997-07-03 1997-07-03 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPH1126604A true JPH1126604A (ja) 1999-01-29
JPH1126604A5 JPH1126604A5 (enExample) 2004-09-02

Family

ID=16047863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9178401A Pending JPH1126604A (ja) 1997-07-03 1997-07-03 半導体装置およびその製造方法

Country Status (5)

Country Link
US (1) US6271569B1 (enExample)
JP (1) JPH1126604A (enExample)
KR (1) KR100348185B1 (enExample)
DE (1) DE19750895C2 (enExample)
TW (1) TW353805B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002061840A1 (en) * 2001-01-30 2002-08-08 Hitachi, Ltd. Semiconductor integrated circuit device and production method therefor
JP2006157044A (ja) * 2001-01-30 2006-06-15 Renesas Technology Corp 半導体集積回路装置の製造方法
US7145194B2 (en) 2003-02-21 2006-12-05 Renesas Technology Corp. Semiconductor integrated circuit device and a method of manufacturing the same
JP2009044183A (ja) * 2008-10-24 2009-02-26 Renesas Technology Corp 半導体集積回路装置およびその製造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100248205B1 (ko) * 1997-06-25 2000-03-15 김영환 반도체 메모리 디바이스 및 그 형성방법
JP4009810B2 (ja) * 2000-04-11 2007-11-21 セイコーエプソン株式会社 半導体記憶装置
JP4000436B2 (ja) * 2000-04-27 2007-10-31 セイコーエプソン株式会社 半導体記憶装置
JP2004200598A (ja) * 2002-12-20 2004-07-15 Renesas Technology Corp 半導体記憶装置および半導体装置
JP4570352B2 (ja) * 2003-12-16 2010-10-27 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US20080272408A1 (en) * 2007-05-01 2008-11-06 Dsm Solutions, Inc. Active area junction isolation structure and junction isolated transistors including igfet, jfet and mos transistors and method for making

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58148453A (ja) 1982-02-26 1983-09-03 Mitsubishi Electric Corp 半導体装置
JPH0682801B2 (ja) * 1983-12-23 1994-10-19 株式会社日立製作所 半導体記憶装置とそのレイアウト方法
JP2559360B2 (ja) * 1984-11-28 1996-12-04 株式会社日立製作所 半導体メモリ装置
JPH0685431B2 (ja) 1985-06-10 1994-10-26 株式会社日立製作所 半導体装置
US5132771A (en) * 1985-12-27 1992-07-21 Hitachi, Ltd. Semiconductor memory device having flip-flop circuits
JPH06103741B2 (ja) * 1988-06-30 1994-12-14 日本電気株式会社 半導体記憶装置
JP3089638B2 (ja) 1989-11-16 2000-09-18 ソニー株式会社 半導体メモリ装置
JPH04162668A (ja) * 1990-10-26 1992-06-08 Hitachi Ltd 半導体装置およびその製造方法
JP3328971B2 (ja) 1992-11-06 2002-09-30 ソニー株式会社 スタティックｒａｍ
KR100305123B1 (ko) * 1992-12-11 2001-11-22 비센트 비.인그라시아, 알크 엠 아헨 정적랜덤액세스메모리셀및이를포함하는반도체장치
JP2682393B2 (ja) * 1993-08-13 1997-11-26 日本電気株式会社 スタティック形半導体記憶装置
JP3285438B2 (ja) * 1993-10-29 2002-05-27 三菱電機株式会社 半導体記憶装置
JP3157969B2 (ja) 1993-11-29 2001-04-23 京セラ株式会社 弾性表面波素子の製造方法
JPH08195445A (ja) 1995-01-17 1996-07-30 Sony Corp 半導体メモリ装置
JP2621820B2 (ja) * 1995-02-28 1997-06-18 日本電気株式会社 スタティック型メモリセル
JPH08250605A (ja) 1995-03-07 1996-09-27 Hitachi Ltd 半導体集積回路装置
JP3400894B2 (ja) * 1995-07-14 2003-04-28 三菱電機株式会社 スタティック型半導体記憶装置
US5808941A (en) * 1996-01-04 1998-09-15 Micron Technology, Inc. SRAM cell employing substantially vertically elongated pull-up resistors

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002061840A1 (en) * 2001-01-30 2002-08-08 Hitachi, Ltd. Semiconductor integrated circuit device and production method therefor
JP2006157044A (ja) * 2001-01-30 2006-06-15 Renesas Technology Corp 半導体集積回路装置の製造方法
US7067864B2 (en) 2001-01-30 2006-06-27 Renesas Technology Corp. SRAM having an improved capacitor
CN100394605C (zh) * 2001-01-30 2008-06-11 株式会社日立制作所 半导体集成电路器件及其制造方法
US7488639B2 (en) 2001-01-30 2009-02-10 Renesas Technology Corp. Method of manufacturing a semiconductor integrated circuit device
JP2009038396A (ja) * 2001-01-30 2009-02-19 Renesas Technology Corp 半導体集積回路装置
US7893505B2 (en) 2001-01-30 2011-02-22 Renesas Electronics Corporation Semiconductor integrated circuit device
US7145194B2 (en) 2003-02-21 2006-12-05 Renesas Technology Corp. Semiconductor integrated circuit device and a method of manufacturing the same
JP2009044183A (ja) * 2008-10-24 2009-02-26 Renesas Technology Corp 半導体集積回路装置およびその製造方法

Also Published As

Publication number Publication date
DE19750895A1 (de) 1999-01-07
US6271569B1 (en) 2001-08-07
KR100348185B1 (ko) 2002-09-18
KR19990013268A (ko) 1999-02-25
DE19750895C2 (de) 2002-01-24
TW353805B (en) 1999-03-01

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