TW353805B - Semiconductor device and its manufacturing method - Google Patents

Semiconductor device and its manufacturing method

Info

Publication number
TW353805B
TW353805B TW086115740A TW86115740A TW353805B TW 353805 B TW353805 B TW 353805B TW 086115740 A TW086115740 A TW 086115740A TW 86115740 A TW86115740 A TW 86115740A TW 353805 B TW353805 B TW 353805B
Authority
TW
Taiwan
Prior art keywords
wiring layer
semiconductor device
memory cells
node portion
memory node
Prior art date
Application number
TW086115740A
Other languages
English (en)
Inventor
Yoshiyuki Ishigaki
Hiroki Honda
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW353805B publication Critical patent/TW353805B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW086115740A 1997-07-03 1997-10-22 Semiconductor device and its manufacturing method TW353805B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9178401A JPH1126604A (ja) 1997-07-03 1997-07-03 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW353805B true TW353805B (en) 1999-03-01

Family

ID=16047863

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086115740A TW353805B (en) 1997-07-03 1997-10-22 Semiconductor device and its manufacturing method

Country Status (5)

Country Link
US (1) US6271569B1 (zh)
JP (1) JPH1126604A (zh)
KR (1) KR100348185B1 (zh)
DE (1) DE19750895C2 (zh)
TW (1) TW353805B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100248205B1 (ko) * 1997-06-25 2000-03-15 김영환 반도체 메모리 디바이스 및 그 형성방법
JP4009810B2 (ja) * 2000-04-11 2007-11-21 セイコーエプソン株式会社 半導体記憶装置
JP4000436B2 (ja) * 2000-04-27 2007-10-31 セイコーエプソン株式会社 半導体記憶装置
JP4535506B2 (ja) * 2001-01-30 2010-09-01 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
KR100625129B1 (ko) * 2001-01-30 2006-09-18 가부시키가이샤 히타치세이사쿠쇼 반도체 집적 회로 장치의 제조 방법
JP2004200598A (ja) * 2002-12-20 2004-07-15 Renesas Technology Corp 半導体記憶装置および半導体装置
JP2004253730A (ja) 2003-02-21 2004-09-09 Renesas Technology Corp 半導体集積回路装置およびその製造方法
JP4570352B2 (ja) * 2003-12-16 2010-10-27 ルネサスエレクトロニクス株式会社 半導体集積回路装置
WO2008137480A2 (en) * 2007-05-01 2008-11-13 Dsm Solutions, Inc. Active area junction isolation structure and junction isolated transistors including igfet, jfet and mos transistors and method for making
JP2009044183A (ja) * 2008-10-24 2009-02-26 Renesas Technology Corp 半導体集積回路装置およびその製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58148453A (ja) 1982-02-26 1983-09-03 Mitsubishi Electric Corp 半導体装置
JPH0682801B2 (ja) * 1983-12-23 1994-10-19 株式会社日立製作所 半導体記憶装置とそのレイアウト方法
JP2559360B2 (ja) * 1984-11-28 1996-12-04 株式会社日立製作所 半導体メモリ装置
JPH0685431B2 (ja) 1985-06-10 1994-10-26 株式会社日立製作所 半導体装置
US5132771A (en) * 1985-12-27 1992-07-21 Hitachi, Ltd. Semiconductor memory device having flip-flop circuits
JPH06103741B2 (ja) * 1988-06-30 1994-12-14 日本電気株式会社 半導体記憶装置
JP3089638B2 (ja) 1989-11-16 2000-09-18 ソニー株式会社 半導体メモリ装置
JPH04162668A (ja) * 1990-10-26 1992-06-08 Hitachi Ltd 半導体装置およびその製造方法
JP3328971B2 (ja) 1992-11-06 2002-09-30 ソニー株式会社 スタティックｒａｍ
KR100305123B1 (ko) * 1992-12-11 2001-11-22 비센트 비.인그라시아, 알크 엠 아헨 정적랜덤액세스메모리셀및이를포함하는반도체장치
JP2682393B2 (ja) * 1993-08-13 1997-11-26 日本電気株式会社 スタティック形半導体記憶装置
JP3285438B2 (ja) * 1993-10-29 2002-05-27 三菱電機株式会社 半導体記憶装置
JPH08195445A (ja) 1995-01-17 1996-07-30 Sony Corp 半導体メモリ装置
JP2621820B2 (ja) * 1995-02-28 1997-06-18 日本電気株式会社 スタティック型メモリセル
JPH08250605A (ja) 1995-03-07 1996-09-27 Hitachi Ltd 半導体集積回路装置
JP3400894B2 (ja) * 1995-07-14 2003-04-28 三菱電機株式会社 スタティック型半導体記憶装置
US5808941A (en) * 1996-01-04 1998-09-15 Micron Technology, Inc. SRAM cell employing substantially vertically elongated pull-up resistors

Also Published As

Publication number Publication date
KR100348185B1 (ko) 2002-09-18
US6271569B1 (en) 2001-08-07
DE19750895A1 (de) 1999-01-07
KR19990013268A (ko) 1999-02-25
JPH1126604A (ja) 1999-01-29
DE19750895C2 (de) 2002-01-24

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