JPH07135323A - 薄膜状半導体集積回路およびその作製方法 - Google Patents

薄膜状半導体集積回路およびその作製方法

Info

Publication number
JPH07135323A
JPH07135323A JP28599093A JP28599093A JPH07135323A JP H07135323 A JPH07135323 A JP H07135323A JP 28599093 A JP28599093 A JP 28599093A JP 28599093 A JP28599093 A JP 28599093A JP H07135323 A JPH07135323 A JP H07135323A
Authority
JP
Japan
Prior art keywords
thin film
circuit
wiring
width
high resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28599093A
Other languages
English (en)
Japanese (ja)
Inventor
Toshimitsu Konuma
利光 小沼
正明 ▲ひろ▼木
Masaaki Hiroki
Kouyuu Chiyou
宏勇 張
Mutsuo Yamamoto
睦男 山本
Yasuhiko Takemura
保彦 竹村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP28599093A priority Critical patent/JPH07135323A/ja
Priority to TW083109495A priority patent/TW280010B/zh
Priority to EP94307556A priority patent/EP0650197A3/en
Priority to EP05002680A priority patent/EP1538676A1/en
Priority to CNB2006100778210A priority patent/CN100521118C/zh
Priority to CN94112813A priority patent/CN1058585C/zh
Priority to KR1019940026818A priority patent/KR100216940B1/ko
Priority to US08/413,104 priority patent/US5620905A/en
Publication of JPH07135323A publication Critical patent/JPH07135323A/ja
Priority to US08/626,578 priority patent/US5608251A/en
Priority to CN98103801A priority patent/CN1132241C/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/981—Utilizing varying dielectric thickness

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
JP28599093A 1993-10-20 1993-10-20 薄膜状半導体集積回路およびその作製方法 Pending JPH07135323A (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP28599093A JPH07135323A (ja) 1993-10-20 1993-10-20 薄膜状半導体集積回路およびその作製方法
TW083109495A TW280010B (enrdf_load_stackoverflow) 1993-10-20 1994-10-13
EP94307556A EP0650197A3 (en) 1993-10-20 1994-10-14 Thin-film semiconductor integrated circuit and method for its manufacture.
EP05002680A EP1538676A1 (en) 1993-10-20 1994-10-14 Thin film semiconductor integrated circuit and method of fabricating the same
CN94112813A CN1058585C (zh) 1993-10-20 1994-10-20 半导体器件
CNB2006100778210A CN100521118C (zh) 1993-10-20 1994-10-20 显示器件
KR1019940026818A KR100216940B1 (ko) 1993-10-20 1994-10-20 반도체 집적회로 및 반도체장치 제작방법
US08/413,104 US5620905A (en) 1993-10-20 1995-03-29 Method of fabricating thin film semiconductor integrated circuit
US08/626,578 US5608251A (en) 1993-10-20 1996-04-02 Thin film semiconductor integrated circuit and method of fabricating the same
CN98103801A CN1132241C (zh) 1993-10-20 1998-02-06 半导体器件制造方法、驱动器电路和有源矩阵型显示器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28599093A JPH07135323A (ja) 1993-10-20 1993-10-20 薄膜状半導体集積回路およびその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP36851697A Division JP3607066B2 (ja) 1997-12-27 1997-12-27 半導体集積回路

Publications (1)

Publication Number Publication Date
JPH07135323A true JPH07135323A (ja) 1995-05-23

Family

ID=17698590

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28599093A Pending JPH07135323A (ja) 1993-10-20 1993-10-20 薄膜状半導体集積回路およびその作製方法

Country Status (6)

Country Link
US (2) US5620905A (enrdf_load_stackoverflow)
EP (2) EP1538676A1 (enrdf_load_stackoverflow)
JP (1) JPH07135323A (enrdf_load_stackoverflow)
KR (1) KR100216940B1 (enrdf_load_stackoverflow)
CN (3) CN100521118C (enrdf_load_stackoverflow)
TW (1) TW280010B (enrdf_load_stackoverflow)

Cited By (20)

* Cited by examiner, † Cited by third party
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US6278131B1 (en) 1999-01-11 2001-08-21 Semiconductor Energy Laboratory Co., Ltd. Pixel TFT and driver TFT having different gate insulation width
US6316787B1 (en) 1996-06-04 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit and fabrication method thereof
US6590229B1 (en) 1999-01-21 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for production thereof
US6593592B1 (en) 1999-01-29 2003-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having thin film transistors
US6777272B2 (en) 1996-12-09 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an active matrix display
US7122835B1 (en) 1999-04-07 2006-10-17 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and a method of manufacturing the same
US7126156B2 (en) 1997-08-19 2006-10-24 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor display device with integral control circuitry
US7145176B2 (en) 2001-04-05 2006-12-05 Hitachi, Ltd. Active matrix display device
JP2006345003A (ja) * 2006-09-20 2006-12-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US7250994B2 (en) 1996-11-20 2007-07-31 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display panel and method for manufacturing light reflecting film thereof
US7279194B2 (en) 2000-02-04 2007-10-09 Semiconductor Energy Laboratory Co., Ltd. Thin film formation apparatus and method of manufacturing self-light-emitting device using thin film formation apparatus
KR100814036B1 (ko) * 2000-02-22 2008-03-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치
JP2008165028A (ja) * 2006-12-28 2008-07-17 Toshiba Matsushita Display Technology Co Ltd 液晶表示装置
JP2008250324A (ja) * 2008-03-31 2008-10-16 Semiconductor Energy Lab Co Ltd 電子装置の作製方法
US7473928B1 (en) 1999-10-12 2009-01-06 Semiconductor Energy Laboratory Co., Ltd. EL display device and a method of manufacturing the same
JP2010010709A (ja) * 2009-10-08 2010-01-14 Semiconductor Energy Lab Co Ltd 半導体装置
US7993992B2 (en) 1996-10-31 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP2014116618A (ja) * 1999-04-06 2014-06-26 Semiconductor Energy Lab Co Ltd 半導体装置
US9053679B2 (en) 1997-09-03 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device correcting system and correcting method of semiconductor display device
US9704996B2 (en) 2000-04-12 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

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JP3437863B2 (ja) * 1993-01-18 2003-08-18 株式会社半導体エネルギー研究所 Ｍｉｓ型半導体装置の作製方法
US5899709A (en) * 1992-04-07 1999-05-04 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device using anodic oxidation
JP3165304B2 (ja) * 1992-12-04 2001-05-14 株式会社半導体エネルギー研究所 半導体装置の作製方法及び半導体処理装置
TW403972B (en) * 1993-01-18 2000-09-01 Semiconductor Energy Lab Method of fabricating mis semiconductor device
TW297142B (enrdf_load_stackoverflow) * 1993-09-20 1997-02-01 Handotai Energy Kenkyusho Kk
CN100367461C (zh) 1993-11-05 2008-02-06 株式会社半导体能源研究所 一种制造薄膜晶体管和电子器件的方法
US6897100B2 (en) 1993-11-05 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
TW299897U (en) 1993-11-05 1997-03-01 Semiconductor Energy Lab A semiconductor integrated circuit
US7081938B1 (en) 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JP3153065B2 (ja) * 1993-12-27 2001-04-03 株式会社半導体エネルギー研究所 半導体集積回路の電極の作製方法
US6747627B1 (en) 1994-04-22 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Redundancy shift register circuit for driver circuit in active matrix type liquid crystal display device
JP3402400B2 (ja) 1994-04-22 2003-05-06 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
US6433361B1 (en) 1994-04-29 2002-08-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit and method for forming the same
JP3312083B2 (ja) * 1994-06-13 2002-08-05 株式会社半導体エネルギー研究所 表示装置
JP3330736B2 (ja) * 1994-07-14 2002-09-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6798394B1 (en) 1994-10-07 2004-09-28 Semiconductor Energy Laboratory Co., Ltd. Active matrix panel
US5814529A (en) * 1995-01-17 1998-09-29 Semiconductor Energy Laboratory Co., Ltd. Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor
JP3778456B2 (ja) * 1995-02-21 2006-05-24 株式会社半導体エネルギー研究所 絶縁ゲイト型薄膜半導体装置の作製方法
KR100265179B1 (ko) 1995-03-27 2000-09-15 야마자끼 순페이 반도체장치와 그의 제작방법
JP3176253B2 (ja) * 1995-05-25 2001-06-11 シャープ株式会社 回路基板
JP3315834B2 (ja) * 1995-05-31 2002-08-19 富士通株式会社 薄膜トランジスタマトリクス装置及びその製造方法
US6396078B1 (en) 1995-06-20 2002-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with a tapered hole formed using multiple layers with different etching rates
JPH09191111A (ja) * 1995-11-07 1997-07-22 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JPH09148266A (ja) * 1995-11-24 1997-06-06 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6294799B1 (en) * 1995-11-27 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
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TW322591B (enrdf_load_stackoverflow) * 1996-02-09 1997-12-11 Handotai Energy Kenkyusho Kk
JP4179483B2 (ja) * 1996-02-13 2008-11-12 株式会社半導体エネルギー研究所 表示装置の作製方法
JPH09298304A (ja) * 1996-05-08 1997-11-18 Semiconductor Energy Lab Co Ltd 液晶表示装置の製造方法および半導体装置の製造方法
US5703394A (en) * 1996-06-10 1997-12-30 Motorola Integrated electro-optical package
US6372592B1 (en) * 1996-12-18 2002-04-16 United States Of America As Represented By The Secretary Of The Navy Self-aligned MOSFET with electrically active mask
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KR100271039B1 (ko) * 1997-10-24 2000-11-01 구본준, 론 위라하디락사 액정표시장치의 기판의 제조방법(method of manufacturing liquid crystal display)
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JP3989763B2 (ja) 2002-04-15 2007-10-10 株式会社半導体エネルギー研究所 半導体表示装置
TWI276179B (en) 2002-04-15 2007-03-11 Adv Lcd Tech Dev Ct Co Ltd Semiconductor device having semiconductor films of different crystallinity, substrate unit, and liquid crystal display, and their manufacturing method
US7411215B2 (en) * 2002-04-15 2008-08-12 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating the same
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KR100216940B1 (ko) 1999-09-01
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EP0650197A2 (en) 1995-04-26
CN1132241C (zh) 2003-12-24
US5608251A (en) 1997-03-04
CN1192044A (zh) 1998-09-02
US5620905A (en) 1997-04-15
EP0650197A3 (en) 1997-07-09
CN1107257A (zh) 1995-08-23
TW280010B (enrdf_load_stackoverflow) 1996-07-01
EP1538676A1 (en) 2005-06-08
CN1855398A (zh) 2006-11-01

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