JPH0472757A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JPH0472757A
JPH0472757A JP2254054A JP25405490A JPH0472757A JP H0472757 A JPH0472757 A JP H0472757A JP 2254054 A JP2254054 A JP 2254054A JP 25405490 A JP25405490 A JP 25405490A JP H0472757 A JPH0472757 A JP H0472757A
Authority
JP
Japan
Prior art keywords
trench
semiconductor device
forming
layer
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2254054A
Other languages
English (en)
Japanese (ja)
Inventor
Su-Han Choi
崔　壽漢
Seong-Tae Kim
晟泰 金
Kyung-Hun Kim
金　景勳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JPH0472757A publication Critical patent/JPH0472757A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/036—Making the capacitor or connections thereto the capacitor extending under the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)
JP2254054A 1990-07-12 1990-09-20 半導体装置及びその製造方法 Pending JPH0472757A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10587 1990-07-12
KR1019900010587A KR930006144B1 (ko) 1990-07-12 1990-07-12 반도체 장치 및 방법

Publications (1)

Publication Number Publication Date
JPH0472757A true JPH0472757A (ja) 1992-03-06

Family

ID=19301186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2254054A Pending JPH0472757A (ja) 1990-07-12 1990-09-20 半導体装置及びその製造方法

Country Status (6)

Country Link
JP (1) JPH0472757A (https=)
KR (1) KR930006144B1 (https=)
DE (1) DE4029070A1 (https=)
FR (1) FR2664742A1 (https=)
GB (1) GB2246014A (https=)
IT (1) IT1243102B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016069227A1 (en) * 2014-10-31 2016-05-06 Dow Global Technologies Llc Separation process
KR102482504B1 (ko) * 2018-04-23 2022-12-30 주식회사 엘지화학 t-부틸 메타크릴레이트의 제조방법
US11031404B2 (en) * 2018-11-26 2021-06-08 Etron Technology, Inc. Dynamic memory structure with a shared counter electrode
CN121013355B (zh) * 2025-10-28 2026-03-17 上海维安半导体有限公司 一种硅电容器及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6384149A (ja) * 1986-09-29 1988-04-14 Hitachi Ltd 半導体メモリの製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0164829B1 (en) * 1984-04-19 1988-09-28 Nippon Telegraph And Telephone Corporation Semiconductor memory device and method of manufacturing the same
JPS6187358A (ja) * 1984-10-05 1986-05-02 Nec Corp 半導体記憶装置およびその製造方法
JPS61258468A (ja) * 1985-05-13 1986-11-15 Hitachi Ltd 半導体記憶装置およびその製造方法
JPS627152A (ja) * 1985-07-03 1987-01-14 Hitachi Ltd 半導体メモリ
JPS627153A (ja) * 1985-07-03 1987-01-14 Hitachi Ltd 半導体メモリ
JPS62120070A (ja) * 1985-11-20 1987-06-01 Toshiba Corp 半導体記憶装置
EP0236089B1 (en) * 1986-03-03 1992-08-05 Fujitsu Limited Dynamic random access memory having trench capacitor
GB2199695B (en) * 1987-01-06 1990-07-25 Samsung Semiconductor Inc Dynamic random access memory with selective well biasing
JPH01101664A (ja) * 1987-10-15 1989-04-19 Nec Corp 半導体集積回路装置
US4951175A (en) * 1988-05-18 1990-08-21 Kabushiki Kaisha Toshiba Semiconductor memory device with stacked capacitor structure and the manufacturing method thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6384149A (ja) * 1986-09-29 1988-04-14 Hitachi Ltd 半導体メモリの製造方法

Also Published As

Publication number Publication date
IT9021516A0 (it) 1990-09-19
DE4029070A1 (de) 1992-01-23
GB2246014A (en) 1992-01-15
GB9020480D0 (en) 1990-10-31
FR2664742A1 (fr) 1992-01-17
IT1243102B (it) 1994-05-24
KR920003557A (ko) 1992-02-29
DE4029070C2 (https=) 1992-07-16
KR930006144B1 (ko) 1993-07-07
IT9021516A1 (it) 1992-03-19

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