KR930006144B1 - 반도체 장치 및 방법 - Google Patents

반도체 장치 및 방법 Download PDF

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Publication number
KR930006144B1
KR930006144B1 KR1019900010587A KR900010587A KR930006144B1 KR 930006144 B1 KR930006144 B1 KR 930006144B1 KR 1019900010587 A KR1019900010587 A KR 1019900010587A KR 900010587 A KR900010587 A KR 900010587A KR 930006144 B1 KR930006144 B1 KR 930006144B1
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KR
South Korea
Prior art keywords
trench
forming
source region
conductive layer
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019900010587A
Other languages
English (en)
Korean (ko)
Other versions
KR920003557A (ko
Inventor
최수한
김성태
김경훈
Original Assignee
삼성전자 주식회사
김광호
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사, 김광호 filed Critical 삼성전자 주식회사
Priority to KR1019900010587A priority Critical patent/KR930006144B1/ko
Priority to DE4029070A priority patent/DE4029070A1/de
Priority to GB9020480A priority patent/GB2246014A/en
Priority to IT02151690A priority patent/IT1243102B/it
Priority to FR9011623A priority patent/FR2664742A1/fr
Priority to JP2254054A priority patent/JPH0472757A/ja
Publication of KR920003557A publication Critical patent/KR920003557A/ko
Application granted granted Critical
Publication of KR930006144B1 publication Critical patent/KR930006144B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/036—Making the capacitor or connections thereto the capacitor extending under the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)
KR1019900010587A 1990-07-12 1990-07-12 반도체 장치 및 방법 Expired - Lifetime KR930006144B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1019900010587A KR930006144B1 (ko) 1990-07-12 1990-07-12 반도체 장치 및 방법
DE4029070A DE4029070A1 (de) 1990-07-12 1990-09-13 Halbleiterbauelement und verfahren zu seiner herstellung
GB9020480A GB2246014A (en) 1990-07-12 1990-09-19 Capacitors for dram cells
IT02151690A IT1243102B (it) 1990-07-12 1990-09-19 Dispositivo a semiconduttore e relativo metodo di fabbricazione.
FR9011623A FR2664742A1 (fr) 1990-07-12 1990-09-20 Dispositif a semi-conducteur pour memoire vive dynamique et son procede de fabrication.
JP2254054A JPH0472757A (ja) 1990-07-12 1990-09-20 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900010587A KR930006144B1 (ko) 1990-07-12 1990-07-12 반도체 장치 및 방법

Publications (2)

Publication Number Publication Date
KR920003557A KR920003557A (ko) 1992-02-29
KR930006144B1 true KR930006144B1 (ko) 1993-07-07

Family

ID=19301186

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900010587A Expired - Lifetime KR930006144B1 (ko) 1990-07-12 1990-07-12 반도체 장치 및 방법

Country Status (6)

Country Link
JP (1) JPH0472757A (https=)
KR (1) KR930006144B1 (https=)
DE (1) DE4029070A1 (https=)
FR (1) FR2664742A1 (https=)
GB (1) GB2246014A (https=)
IT (1) IT1243102B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016069227A1 (en) * 2014-10-31 2016-05-06 Dow Global Technologies Llc Separation process
KR102482504B1 (ko) * 2018-04-23 2022-12-30 주식회사 엘지화학 t-부틸 메타크릴레이트의 제조방법
US11031404B2 (en) * 2018-11-26 2021-06-08 Etron Technology, Inc. Dynamic memory structure with a shared counter electrode
CN121013355B (zh) * 2025-10-28 2026-03-17 上海维安半导体有限公司 一种硅电容器及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0164829B1 (en) * 1984-04-19 1988-09-28 Nippon Telegraph And Telephone Corporation Semiconductor memory device and method of manufacturing the same
JPS6187358A (ja) * 1984-10-05 1986-05-02 Nec Corp 半導体記憶装置およびその製造方法
JPS61258468A (ja) * 1985-05-13 1986-11-15 Hitachi Ltd 半導体記憶装置およびその製造方法
JPS627152A (ja) * 1985-07-03 1987-01-14 Hitachi Ltd 半導体メモリ
JPS627153A (ja) * 1985-07-03 1987-01-14 Hitachi Ltd 半導体メモリ
JPS62120070A (ja) * 1985-11-20 1987-06-01 Toshiba Corp 半導体記憶装置
EP0236089B1 (en) * 1986-03-03 1992-08-05 Fujitsu Limited Dynamic random access memory having trench capacitor
JPS6384149A (ja) * 1986-09-29 1988-04-14 Hitachi Ltd 半導体メモリの製造方法
GB2199695B (en) * 1987-01-06 1990-07-25 Samsung Semiconductor Inc Dynamic random access memory with selective well biasing
JPH01101664A (ja) * 1987-10-15 1989-04-19 Nec Corp 半導体集積回路装置
US4951175A (en) * 1988-05-18 1990-08-21 Kabushiki Kaisha Toshiba Semiconductor memory device with stacked capacitor structure and the manufacturing method thereof

Also Published As

Publication number Publication date
IT9021516A0 (it) 1990-09-19
DE4029070A1 (de) 1992-01-23
GB2246014A (en) 1992-01-15
GB9020480D0 (en) 1990-10-31
FR2664742A1 (fr) 1992-01-17
JPH0472757A (ja) 1992-03-06
IT1243102B (it) 1994-05-24
KR920003557A (ko) 1992-02-29
DE4029070C2 (https=) 1992-07-16
IT9021516A1 (it) 1992-03-19

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