IT1243102B - Dispositivo a semiconduttore e relativo metodo di fabbricazione. - Google Patents
Dispositivo a semiconduttore e relativo metodo di fabbricazione.Info
- Publication number
- IT1243102B IT1243102B IT02151690A IT2151690A IT1243102B IT 1243102 B IT1243102 B IT 1243102B IT 02151690 A IT02151690 A IT 02151690A IT 2151690 A IT2151690 A IT 2151690A IT 1243102 B IT1243102 B IT 1243102B
- Authority
- IT
- Italy
- Prior art keywords
- semiconductor device
- related manufacturing
- manufacturing
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/036—Making the capacitor or connections thereto the capacitor extending under the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
- H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
- H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Thin Film Transistor (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900010587A KR930006144B1 (ko) | 1990-07-12 | 1990-07-12 | 반도체 장치 및 방법 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| IT9021516A0 IT9021516A0 (it) | 1990-09-19 |
| IT9021516A1 IT9021516A1 (it) | 1992-03-19 |
| IT1243102B true IT1243102B (it) | 1994-05-24 |
Family
ID=19301186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT02151690A IT1243102B (it) | 1990-07-12 | 1990-09-19 | Dispositivo a semiconduttore e relativo metodo di fabbricazione. |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPH0472757A (https=) |
| KR (1) | KR930006144B1 (https=) |
| DE (1) | DE4029070A1 (https=) |
| FR (1) | FR2664742A1 (https=) |
| GB (1) | GB2246014A (https=) |
| IT (1) | IT1243102B (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016069227A1 (en) * | 2014-10-31 | 2016-05-06 | Dow Global Technologies Llc | Separation process |
| KR102482504B1 (ko) * | 2018-04-23 | 2022-12-30 | 주식회사 엘지화학 | t-부틸 메타크릴레이트의 제조방법 |
| US11031404B2 (en) * | 2018-11-26 | 2021-06-08 | Etron Technology, Inc. | Dynamic memory structure with a shared counter electrode |
| CN121013355B (zh) * | 2025-10-28 | 2026-03-17 | 上海维安半导体有限公司 | 一种硅电容器及其制备方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0164829B1 (en) * | 1984-04-19 | 1988-09-28 | Nippon Telegraph And Telephone Corporation | Semiconductor memory device and method of manufacturing the same |
| JPS6187358A (ja) * | 1984-10-05 | 1986-05-02 | Nec Corp | 半導体記憶装置およびその製造方法 |
| JPS61258468A (ja) * | 1985-05-13 | 1986-11-15 | Hitachi Ltd | 半導体記憶装置およびその製造方法 |
| JPS627152A (ja) * | 1985-07-03 | 1987-01-14 | Hitachi Ltd | 半導体メモリ |
| JPS627153A (ja) * | 1985-07-03 | 1987-01-14 | Hitachi Ltd | 半導体メモリ |
| JPS62120070A (ja) * | 1985-11-20 | 1987-06-01 | Toshiba Corp | 半導体記憶装置 |
| EP0236089B1 (en) * | 1986-03-03 | 1992-08-05 | Fujitsu Limited | Dynamic random access memory having trench capacitor |
| JPS6384149A (ja) * | 1986-09-29 | 1988-04-14 | Hitachi Ltd | 半導体メモリの製造方法 |
| GB2199695B (en) * | 1987-01-06 | 1990-07-25 | Samsung Semiconductor Inc | Dynamic random access memory with selective well biasing |
| JPH01101664A (ja) * | 1987-10-15 | 1989-04-19 | Nec Corp | 半導体集積回路装置 |
| US4951175A (en) * | 1988-05-18 | 1990-08-21 | Kabushiki Kaisha Toshiba | Semiconductor memory device with stacked capacitor structure and the manufacturing method thereof |
-
1990
- 1990-07-12 KR KR1019900010587A patent/KR930006144B1/ko not_active Expired - Lifetime
- 1990-09-13 DE DE4029070A patent/DE4029070A1/de active Granted
- 1990-09-19 GB GB9020480A patent/GB2246014A/en not_active Withdrawn
- 1990-09-19 IT IT02151690A patent/IT1243102B/it active IP Right Grant
- 1990-09-20 FR FR9011623A patent/FR2664742A1/fr not_active Withdrawn
- 1990-09-20 JP JP2254054A patent/JPH0472757A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| IT9021516A0 (it) | 1990-09-19 |
| DE4029070A1 (de) | 1992-01-23 |
| GB2246014A (en) | 1992-01-15 |
| GB9020480D0 (en) | 1990-10-31 |
| FR2664742A1 (fr) | 1992-01-17 |
| JPH0472757A (ja) | 1992-03-06 |
| KR920003557A (ko) | 1992-02-29 |
| DE4029070C2 (https=) | 1992-07-16 |
| KR930006144B1 (ko) | 1993-07-07 |
| IT9021516A1 (it) | 1992-03-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 0001 | Granted |