GB2246014A - Capacitors for dram cells - Google Patents

Capacitors for dram cells Download PDF

Info

Publication number
GB2246014A
GB2246014A GB9020480A GB9020480A GB2246014A GB 2246014 A GB2246014 A GB 2246014A GB 9020480 A GB9020480 A GB 9020480A GB 9020480 A GB9020480 A GB 9020480A GB 2246014 A GB2246014 A GB 2246014A
Authority
GB
United Kingdom
Prior art keywords
layer
trench
forming
electrode
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB9020480A
Other languages
English (en)
Other versions
GB9020480D0 (en
Inventor
Su-Han Choi
Seong-Tae Kim
Kyung-Hun Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9020480D0 publication Critical patent/GB9020480D0/en
Publication of GB2246014A publication Critical patent/GB2246014A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/036—Making the capacitor or connections thereto the capacitor extending under the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)
GB9020480A 1990-07-12 1990-09-19 Capacitors for dram cells Withdrawn GB2246014A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900010587A KR930006144B1 (ko) 1990-07-12 1990-07-12 반도체 장치 및 방법

Publications (2)

Publication Number Publication Date
GB9020480D0 GB9020480D0 (en) 1990-10-31
GB2246014A true GB2246014A (en) 1992-01-15

Family

ID=19301186

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9020480A Withdrawn GB2246014A (en) 1990-07-12 1990-09-19 Capacitors for dram cells

Country Status (6)

Country Link
JP (1) JPH0472757A (https=)
KR (1) KR930006144B1 (https=)
DE (1) DE4029070A1 (https=)
FR (1) FR2664742A1 (https=)
GB (1) GB2246014A (https=)
IT (1) IT1243102B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016069227A1 (en) * 2014-10-31 2016-05-06 Dow Global Technologies Llc Separation process
KR102482504B1 (ko) * 2018-04-23 2022-12-30 주식회사 엘지화학 t-부틸 메타크릴레이트의 제조방법
US11031404B2 (en) * 2018-11-26 2021-06-08 Etron Technology, Inc. Dynamic memory structure with a shared counter electrode
CN121013355B (zh) * 2025-10-28 2026-03-17 上海维安半导体有限公司 一种硅电容器及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0177066A2 (en) * 1984-10-05 1986-04-09 Nec Corporation Semiconductor memory device with information storage vertical trench capacitor and method of manufacturing the same
EP0236089A2 (en) * 1986-03-03 1987-09-09 Fujitsu Limited Dynamic random access memory having trench capacitor
GB2199695A (en) * 1987-01-06 1988-07-13 Samsung Semiconductor Inc Dynamic random access memory with selective well biasing

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0164829B1 (en) * 1984-04-19 1988-09-28 Nippon Telegraph And Telephone Corporation Semiconductor memory device and method of manufacturing the same
JPS61258468A (ja) * 1985-05-13 1986-11-15 Hitachi Ltd 半導体記憶装置およびその製造方法
JPS627152A (ja) * 1985-07-03 1987-01-14 Hitachi Ltd 半導体メモリ
JPS627153A (ja) * 1985-07-03 1987-01-14 Hitachi Ltd 半導体メモリ
JPS62120070A (ja) * 1985-11-20 1987-06-01 Toshiba Corp 半導体記憶装置
JPS6384149A (ja) * 1986-09-29 1988-04-14 Hitachi Ltd 半導体メモリの製造方法
JPH01101664A (ja) * 1987-10-15 1989-04-19 Nec Corp 半導体集積回路装置
US4951175A (en) * 1988-05-18 1990-08-21 Kabushiki Kaisha Toshiba Semiconductor memory device with stacked capacitor structure and the manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0177066A2 (en) * 1984-10-05 1986-04-09 Nec Corporation Semiconductor memory device with information storage vertical trench capacitor and method of manufacturing the same
EP0236089A2 (en) * 1986-03-03 1987-09-09 Fujitsu Limited Dynamic random access memory having trench capacitor
GB2199695A (en) * 1987-01-06 1988-07-13 Samsung Semiconductor Inc Dynamic random access memory with selective well biasing

Also Published As

Publication number Publication date
IT9021516A0 (it) 1990-09-19
DE4029070A1 (de) 1992-01-23
GB9020480D0 (en) 1990-10-31
FR2664742A1 (fr) 1992-01-17
JPH0472757A (ja) 1992-03-06
IT1243102B (it) 1994-05-24
KR920003557A (ko) 1992-02-29
DE4029070C2 (https=) 1992-07-16
KR930006144B1 (ko) 1993-07-07
IT9021516A1 (it) 1992-03-19

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)