FR2664742A1 - Dispositif a semi-conducteur pour memoire vive dynamique et son procede de fabrication. - Google Patents

Dispositif a semi-conducteur pour memoire vive dynamique et son procede de fabrication. Download PDF

Info

Publication number
FR2664742A1
FR2664742A1 FR9011623A FR9011623A FR2664742A1 FR 2664742 A1 FR2664742 A1 FR 2664742A1 FR 9011623 A FR9011623 A FR 9011623A FR 9011623 A FR9011623 A FR 9011623A FR 2664742 A1 FR2664742 A1 FR 2664742A1
Authority
FR
France
Prior art keywords
layer
groove
forming
semiconductor device
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR9011623A
Other languages
English (en)
French (fr)
Inventor
Su-Han Choi
Seong-Tae Kim
Kyung-Hun Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2664742A1 publication Critical patent/FR2664742A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/036—Making the capacitor or connections thereto the capacitor extending under the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)
FR9011623A 1990-07-12 1990-09-20 Dispositif a semi-conducteur pour memoire vive dynamique et son procede de fabrication. Withdrawn FR2664742A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900010587A KR930006144B1 (ko) 1990-07-12 1990-07-12 반도체 장치 및 방법

Publications (1)

Publication Number Publication Date
FR2664742A1 true FR2664742A1 (fr) 1992-01-17

Family

ID=19301186

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9011623A Withdrawn FR2664742A1 (fr) 1990-07-12 1990-09-20 Dispositif a semi-conducteur pour memoire vive dynamique et son procede de fabrication.

Country Status (6)

Country Link
JP (1) JPH0472757A (https=)
KR (1) KR930006144B1 (https=)
DE (1) DE4029070A1 (https=)
FR (1) FR2664742A1 (https=)
GB (1) GB2246014A (https=)
IT (1) IT1243102B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016069227A1 (en) * 2014-10-31 2016-05-06 Dow Global Technologies Llc Separation process
KR102482504B1 (ko) * 2018-04-23 2022-12-30 주식회사 엘지화학 t-부틸 메타크릴레이트의 제조방법
US11031404B2 (en) * 2018-11-26 2021-06-08 Etron Technology, Inc. Dynamic memory structure with a shared counter electrode
CN121013355B (zh) * 2025-10-28 2026-03-17 上海维安半导体有限公司 一种硅电容器及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0164829A1 (en) * 1984-04-19 1985-12-18 Nippon Telegraph And Telephone Corporation Semiconductor memory device and method of manufacturing the same
JPH01101664A (ja) * 1987-10-15 1989-04-19 Nec Corp 半導体集積回路装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6187358A (ja) * 1984-10-05 1986-05-02 Nec Corp 半導体記憶装置およびその製造方法
JPS61258468A (ja) * 1985-05-13 1986-11-15 Hitachi Ltd 半導体記憶装置およびその製造方法
JPS627152A (ja) * 1985-07-03 1987-01-14 Hitachi Ltd 半導体メモリ
JPS627153A (ja) * 1985-07-03 1987-01-14 Hitachi Ltd 半導体メモリ
JPS62120070A (ja) * 1985-11-20 1987-06-01 Toshiba Corp 半導体記憶装置
EP0236089B1 (en) * 1986-03-03 1992-08-05 Fujitsu Limited Dynamic random access memory having trench capacitor
JPS6384149A (ja) * 1986-09-29 1988-04-14 Hitachi Ltd 半導体メモリの製造方法
GB2199695B (en) * 1987-01-06 1990-07-25 Samsung Semiconductor Inc Dynamic random access memory with selective well biasing
US4951175A (en) * 1988-05-18 1990-08-21 Kabushiki Kaisha Toshiba Semiconductor memory device with stacked capacitor structure and the manufacturing method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0164829A1 (en) * 1984-04-19 1985-12-18 Nippon Telegraph And Telephone Corporation Semiconductor memory device and method of manufacturing the same
JPH01101664A (ja) * 1987-10-15 1989-04-19 Nec Corp 半導体集積回路装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN, vol. 13, no. 343 (E-796)[3691], 2 août 1989; & JP-A-1 101 664 (NEC CORP.) 19-04-1989 *

Also Published As

Publication number Publication date
IT9021516A0 (it) 1990-09-19
DE4029070A1 (de) 1992-01-23
GB2246014A (en) 1992-01-15
GB9020480D0 (en) 1990-10-31
JPH0472757A (ja) 1992-03-06
IT1243102B (it) 1994-05-24
KR920003557A (ko) 1992-02-29
DE4029070C2 (https=) 1992-07-16
KR930006144B1 (ko) 1993-07-07
IT9021516A1 (it) 1992-03-19

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