JP7412340B2 - 高アスペクト比構造のスティクションを防ぐためのシステムおよび方法、および／または、高アスペクト比の構造を修復するためのシステムおよび方法 - Google Patents

高アスペクト比構造のスティクションを防ぐためのシステムおよび方法、および／または、高アスペクト比の構造を修復するためのシステムおよび方法 Download PDF

Info

Publication number
JP7412340B2
JP7412340B2 JP2020542530A JP2020542530A JP7412340B2 JP 7412340 B2 JP7412340 B2 JP 7412340B2 JP 2020542530 A JP2020542530 A JP 2020542530A JP 2020542530 A JP2020542530 A JP 2020542530A JP 7412340 B2 JP7412340 B2 JP 7412340B2
Authority
JP
Japan
Prior art keywords
chamber
substrate
gas mixture
nozzle
range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020542530A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021500756A (ja
JP2021500756A5 (enExample
Inventor
ディクトゥス・ドリース
ロ・ター－イー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research AG
Original Assignee
Lam Research AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research AG filed Critical Lam Research AG
Publication of JP2021500756A publication Critical patent/JP2021500756A/ja
Publication of JP2021500756A5 publication Critical patent/JP2021500756A5/ja
Application granted granted Critical
Publication of JP7412340B2 publication Critical patent/JP7412340B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B08B3/022—Cleaning travelling work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
    • B08B9/08—Cleaning containers, e.g. tanks
    • B08B9/0804—Cleaning containers having tubular shape, e.g. casks, barrels, drums
    • B08B9/0813—Cleaning containers having tubular shape, e.g. casks, barrels, drums by the force of jets or sprays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6508—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Drying Of Semiconductors (AREA)
  • Aiming, Guidance, Guns With A Light Source, Armor, Camouflage, And Targets (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Micromachines (AREA)
JP2020542530A 2017-10-23 2018-10-11 高アスペクト比構造のスティクションを防ぐためのシステムおよび方法、および／または、高アスペクト比の構造を修復するためのシステムおよび方法 Active JP7412340B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762575705P 2017-10-23 2017-10-23
US62/575,705 2017-10-23
PCT/US2018/055436 WO2019083735A1 (en) 2017-10-23 2018-10-11 SYSTEMS AND METHODS FOR PREVENTING THE STATIC FRICTION OF HIGH-SHAPE RATIO STRUCTURES AND / OR REPAIRING HIGH-SHAPE RATIO STRUCTURES

Publications (3)

Publication Number Publication Date
JP2021500756A JP2021500756A (ja) 2021-01-07
JP2021500756A5 JP2021500756A5 (enExample) 2021-11-18
JP7412340B2 true JP7412340B2 (ja) 2024-01-12

Family

ID=66247965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020542530A Active JP7412340B2 (ja) 2017-10-23 2018-10-11 高アスペクト比構造のスティクションを防ぐためのシステムおよび方法、および／または、高アスペクト比の構造を修復するためのシステムおよび方法

Country Status (8)

Country Link
US (1) US11854792B2 (enExample)
EP (1) EP3701561A4 (enExample)
JP (1) JP7412340B2 (enExample)
KR (2) KR20200063242A (enExample)
CN (1) CN111279454B (enExample)
SG (1) SG11202003653WA (enExample)
TW (1) TWI767074B (enExample)
WO (1) WO2019083735A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6875811B2 (ja) * 2016-09-16 2021-05-26 株式会社Ｓｃｒｅｅｎホールディングス パターン倒壊回復方法、基板処理方法および基板処理装置
TWI821369B (zh) 2018-08-23 2023-11-11 奧地利商蘭姆研究股份公司 用於防止高深寬比結構的黏滯效應及／或修補高深寬比結構的蒸氣輸送頭
WO2020072278A1 (en) 2018-10-03 2020-04-09 Lam Research Ag Gas mixture including hydrogen fluoride, alcohol and an additive for preventing stiction of and/or repairing high aspect ratio structures
GB201820270D0 (en) 2018-12-12 2019-01-30 Lam Res Ag Method and apparatus for treating semiconductor substrate
JP2021022598A (ja) * 2019-07-24 2021-02-18 東京エレクトロン株式会社 基板処理方法、基板処理装置及び配線パターン形成システム
JP7714438B2 (ja) 2020-11-12 2025-07-29 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
US12568781B2 (en) 2021-01-25 2026-03-03 Lam Research Corporation Selective silicon trim by thermal etching
WO2026133983A1 (ja) * 2024-12-18 2026-06-25 東京エレクトロン株式会社 基板処理システム、基板処理方法およびプログラム

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015088619A (ja) 2013-10-30 2015-05-07 株式会社Ｓｃｒｅｅｎホールディングス 犠牲膜除去方法および基板処理装置
JP2017118026A (ja) 2015-12-25 2017-06-29 東京エレクトロン株式会社 基板処理方法及び基板処理システム

Family Cites Families (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08213357A (ja) 1995-02-06 1996-08-20 Hitachi Ltd 基板の洗浄処理方法
JPH08316189A (ja) 1995-05-12 1996-11-29 Hitachi Ltd 基板の洗浄処理方法
US5489553A (en) * 1995-05-25 1996-02-06 Industrial Technology Research Institute HF vapor surface treatment for the 03 teos gap filling deposition
US5954911A (en) * 1995-10-12 1999-09-21 Semitool, Inc. Semiconductor processing using vapor mixtures
KR100238234B1 (ko) * 1997-03-20 2000-01-15 윤종용 반도체소자용 인-시튜 세정장치 및 그를 이용한 반도체 소자의 세정방법
US7404863B2 (en) 1997-05-09 2008-07-29 Semitool, Inc. Methods of thinning a silicon wafer using HF and ozone
US6485531B1 (en) 1998-09-15 2002-11-26 Levitronix Llc Process chamber
KR100887360B1 (ko) * 2001-01-23 2009-03-06 도쿄엘렉트론가부시키가이샤 기판처리장치 및 기판처리방법
KR100416592B1 (ko) * 2001-02-10 2004-02-05 삼성전자주식회사 매엽식 웨이퍼 세정 장치 및 이를 이용한 웨이퍼 세정 방법
US20020160606A1 (en) * 2001-02-14 2002-10-31 Siefering Kevin L. Method for material removal from an in-process microelectronic substrate
KR100445259B1 (ko) 2001-11-27 2004-08-21 삼성전자주식회사 세정방법 및 이를 수행하기 위한 세정 장치
US7279431B2 (en) * 2003-06-18 2007-10-09 Semitool, Inc. Vapor phase etching MEMS devices
JP2005191511A (ja) * 2003-12-02 2005-07-14 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
US20060042664A1 (en) * 2004-08-30 2006-03-02 Vishwas Hardikar Apparatus and method for removing a liquid from a rotating substrate surface
JP2006114884A (ja) * 2004-09-17 2006-04-27 Ebara Corp 基板洗浄処理装置及び基板処理ユニット
DE102004062355A1 (de) * 2004-12-23 2006-07-06 Siltronic Ag Verfahren zum Behandeln einer Halbleiterscheibe mit einem gasförmigen Medium sowie damit behandelte Halbleiterscheibe
US20060196527A1 (en) * 2005-02-23 2006-09-07 Tokyo Electron Limited Method of surface processing substrate, method of cleaning substrate, and programs for implementing the methods
JP4527660B2 (ja) * 2005-06-23 2010-08-18 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP4607755B2 (ja) * 2005-12-19 2011-01-05 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置、制御プログラム、およびコンピュータ読取可能な記憶媒体
KR101100466B1 (ko) * 2005-12-22 2011-12-29 도쿄엘렉트론가부시키가이샤 기판 처리 장치
JP4854317B2 (ja) * 2006-01-31 2012-01-18 東京エレクトロン株式会社 基板処理方法
JP2007227764A (ja) * 2006-02-24 2007-09-06 Dainippon Screen Mfg Co Ltd 基板表面処理装置、基板表面処理方法および基板処理装置
JP4176779B2 (ja) * 2006-03-29 2008-11-05 東京エレクトロン株式会社 基板処理方法，記録媒体及び基板処理装置
US20080053486A1 (en) * 2006-08-10 2008-03-06 Applied Materials, Inc. Semiconductor substrate cleaning apparatus
JP5023705B2 (ja) * 2007-01-10 2012-09-12 東京エレクトロン株式会社 半導体装置の製造方法、半導体製造装置及び記憶媒体
US7964042B2 (en) * 2007-07-30 2011-06-21 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method
US20100154826A1 (en) * 2008-12-19 2010-06-24 Tokyo Electron Limited System and Method For Rinse Optimization
US8440573B2 (en) 2010-01-26 2013-05-14 Lam Research Corporation Method and apparatus for pattern collapse free wet processing of semiconductor devices
US8617993B2 (en) 2010-02-01 2013-12-31 Lam Research Corporation Method of reducing pattern collapse in high aspect ratio nanostructures
WO2012027667A2 (en) 2010-08-27 2012-03-01 Advanced Technology Materials, Inc. Method for preventing the collapse of high aspect ratio structures during drying
US8926788B2 (en) 2010-10-27 2015-01-06 Lam Research Ag Closed chamber for wafer wet processing
WO2012063901A1 (ja) * 2010-11-11 2012-05-18 東京エレクトロン株式会社 半導体装置の製造方法および製造装置
US9997379B2 (en) 2010-11-30 2018-06-12 Lam Research Ag Method and apparatus for wafer wet processing
KR101290527B1 (ko) 2011-05-31 2013-07-30 주식회사 테스 기판처리시스템 및 이를 이용한 기판처리방법
JP5958950B2 (ja) * 2011-07-13 2016-08-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US9484229B2 (en) * 2011-11-14 2016-11-01 Lam Research Ag Device and method for processing wafer-shaped articles
JP5632860B2 (ja) * 2012-01-05 2014-11-26 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置及び基板洗浄用記憶媒体
KR20130118559A (ko) * 2012-04-20 2013-10-30 에스케이하이닉스 주식회사 반도체 소자 및 이의 제조 방법
US20140026926A1 (en) 2012-07-30 2014-01-30 Lam Research Ag Method and apparatus for liquid treatment of wafer-shaped articles
JP6317547B2 (ja) * 2012-08-28 2018-04-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP2015056519A (ja) * 2013-09-12 2015-03-23 東京エレクトロン株式会社 エッチング方法、エッチング装置及び記憶媒体
JP6363876B2 (ja) * 2014-05-21 2018-07-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6435667B2 (ja) 2014-07-01 2018-12-12 東京エレクトロン株式会社 エッチング方法、エッチング装置及び記憶媒体
US9460944B2 (en) * 2014-07-02 2016-10-04 SCREEN Holdings Co., Ltd. Substrate treating apparatus and method of treating substrate
JP6389089B2 (ja) * 2014-09-18 2018-09-12 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6489524B2 (ja) * 2015-08-18 2019-03-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6591280B2 (ja) * 2015-12-16 2019-10-16 東芝メモリ株式会社 基板処理装置および基板処理方法
JP6588819B2 (ja) * 2015-12-24 2019-10-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6624609B2 (ja) * 2016-02-15 2019-12-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6722532B2 (ja) * 2016-07-19 2020-07-15 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および処理カップ洗浄方法
US10446416B2 (en) 2016-08-09 2019-10-15 Lam Research Ag Method and apparatus for processing wafer-shaped articles
JP6789038B2 (ja) * 2016-08-29 2020-11-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6881922B2 (ja) * 2016-09-12 2021-06-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6875811B2 (ja) 2016-09-16 2021-05-26 株式会社Ｓｃｒｅｅｎホールディングス パターン倒壊回復方法、基板処理方法および基板処理装置
JP6818484B2 (ja) * 2016-09-26 2021-01-20 株式会社Ｓｃｒｅｅｎホールディングス 基板洗浄方法、基板洗浄レシピ作成方法、および基板洗浄レシピ作成装置
JP6812284B2 (ja) * 2017-03-28 2021-01-13 東京エレクトロン株式会社 エッチング方法及び記録媒体
JP6811675B2 (ja) * 2017-04-28 2021-01-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7109165B2 (ja) * 2017-05-30 2022-07-29 東京エレクトロン株式会社 エッチング方法
JP6938248B2 (ja) * 2017-07-04 2021-09-22 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP6914138B2 (ja) * 2017-07-26 2021-08-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法及び基板処理装置
JP7116534B2 (ja) * 2017-09-21 2022-08-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015088619A (ja) 2013-10-30 2015-05-07 株式会社Ｓｃｒｅｅｎホールディングス 犠牲膜除去方法および基板処理装置
JP2017118026A (ja) 2015-12-25 2017-06-29 東京エレクトロン株式会社 基板処理方法及び基板処理システム

Also Published As

Publication number Publication date
KR20200063242A (ko) 2020-06-04
EP3701561A1 (en) 2020-09-02
KR20240116558A (ko) 2024-07-29
TWI767074B (zh) 2022-06-11
US20210193456A1 (en) 2021-06-24
JP2021500756A (ja) 2021-01-07
TW201931432A (zh) 2019-08-01
EP3701561A4 (en) 2021-07-21
US11854792B2 (en) 2023-12-26
CN111279454A (zh) 2020-06-12
CN111279454B (zh) 2025-08-29
KR102891364B1 (ko) 2025-11-25
SG11202003653WA (en) 2020-05-28
WO2019083735A1 (en) 2019-05-02

Similar Documents

Publication Publication Date Title
US11854792B2 (en) Systems and methods for preventing stiction of high aspect ratio structures and/or repairing high aspect ratio structures
US11217452B2 (en) Substrate processing device and substrate processing method for carrying out chemical treatment for substrate
TWI698906B (zh) 基板處理方法以及基板處理裝置
CN102376540B (zh) 基板处理方法以及基板处理装置
US9768011B2 (en) Substrate treatment method and substrate treatment apparatus
US9059104B2 (en) Process for selectively removing nitride from substrates
KR20140023253A (ko) 반도체 웨이퍼를 건조시키는 방법 및 장치
US12198945B2 (en) Vapor delivery head for preventing stiction of high aspect ratio structures and/or repairing high aspect ratio structures
KR20090130197A (ko) 기판으로부터의 물질 제거 공정
JP2005311354A (ja) 近接ヘッドを用いたウエハ乾燥中の周囲環境の制御
KR20150111966A (ko) 기판으로부터 탄소 재료를 제거하기 위한 프로세스
JP2021500756A5 (enExample)
US20240038526A1 (en) Gas mixture including hydrogen fluoride, alcohol and an additive for preventing stiction of and/or repairing high aspect ratio structures
JP2007208247A (ja) 基板を洗浄するための装置およびシステム
US8021512B2 (en) Method of preventing premature drying
JP2003059888A (ja) 温水洗浄方法及び装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200623

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211005

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20211005

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20221122

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230222

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230613

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230908

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20231212

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20231226

R150 Certificate of patent or registration of utility model

Ref document number: 7412340

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150