KR20200063242A - 고 종횡비 구조체들의 정지 마찰을 방지하고 그리고/또는 고 종횡비 구조체들을 복구하기 위한 시스템들 및 방법들 - Google Patents
고 종횡비 구조체들의 정지 마찰을 방지하고 그리고/또는 고 종횡비 구조체들을 복구하기 위한 시스템들 및 방법들 Download PDFInfo
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- KR20200063242A KR20200063242A KR1020207014365A KR20207014365A KR20200063242A KR 20200063242 A KR20200063242 A KR 20200063242A KR 1020207014365 A KR1020207014365 A KR 1020207014365A KR 20207014365 A KR20207014365 A KR 20207014365A KR 20200063242 A KR20200063242 A KR 20200063242A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
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- H01L21/02043—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/022—Cleaning travelling work
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
- B08B9/0804—Cleaning containers having tubular shape, e.g. casks, barrels, drums
- B08B9/0813—Cleaning containers having tubular shape, e.g. casks, barrels, drums by the force of jets or sprays
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- H01L21/02307—
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- H01L21/02312—
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- H01L21/324—
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- H01L21/67028—
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- H01L21/6715—
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- H01L21/67248—
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- H01L21/683—
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- H01L21/68764—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
- H10P14/6508—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a liquid
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
- H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0436—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0602—Temperature monitoring
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Drying Of Semiconductors (AREA)
- Aiming, Guidance, Guns With A Light Source, Armor, Camouflage, And Targets (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Micromachines (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020247023739A KR102891364B1 (ko) | 2017-10-23 | 2018-10-11 | 고 종횡비 구조체들의 정지 마찰을 방지하고 그리고/또는 고 종횡비 구조체들을 복구하기 위한 시스템들 및 방법들 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762575705P | 2017-10-23 | 2017-10-23 | |
| US62/575,705 | 2017-10-23 | ||
| PCT/US2018/055436 WO2019083735A1 (en) | 2017-10-23 | 2018-10-11 | SYSTEMS AND METHODS FOR PREVENTING THE STATIC FRICTION OF HIGH-SHAPE RATIO STRUCTURES AND / OR REPAIRING HIGH-SHAPE RATIO STRUCTURES |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247023739A Division KR102891364B1 (ko) | 2017-10-23 | 2018-10-11 | 고 종횡비 구조체들의 정지 마찰을 방지하고 그리고/또는 고 종횡비 구조체들을 복구하기 위한 시스템들 및 방법들 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20200063242A true KR20200063242A (ko) | 2020-06-04 |
Family
ID=66247965
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020207014365A Ceased KR20200063242A (ko) | 2017-10-23 | 2018-10-11 | 고 종횡비 구조체들의 정지 마찰을 방지하고 그리고/또는 고 종횡비 구조체들을 복구하기 위한 시스템들 및 방법들 |
| KR1020247023739A Active KR102891364B1 (ko) | 2017-10-23 | 2018-10-11 | 고 종횡비 구조체들의 정지 마찰을 방지하고 그리고/또는 고 종횡비 구조체들을 복구하기 위한 시스템들 및 방법들 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247023739A Active KR102891364B1 (ko) | 2017-10-23 | 2018-10-11 | 고 종횡비 구조체들의 정지 마찰을 방지하고 그리고/또는 고 종횡비 구조체들을 복구하기 위한 시스템들 및 방법들 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11854792B2 (enExample) |
| EP (1) | EP3701561A4 (enExample) |
| JP (1) | JP7412340B2 (enExample) |
| KR (2) | KR20200063242A (enExample) |
| CN (1) | CN111279454B (enExample) |
| SG (1) | SG11202003653WA (enExample) |
| TW (1) | TWI767074B (enExample) |
| WO (1) | WO2019083735A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220064917A (ko) | 2020-11-12 | 2022-05-19 | 스미또모 가가꾸 가부시키가이샤 | 염, 산 발생제, 레지스트 조성물 및 레지스트 패턴의 제조 방법 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6875811B2 (ja) * | 2016-09-16 | 2021-05-26 | 株式会社Screenホールディングス | パターン倒壊回復方法、基板処理方法および基板処理装置 |
| TWI821369B (zh) | 2018-08-23 | 2023-11-11 | 奧地利商蘭姆研究股份公司 | 用於防止高深寬比結構的黏滯效應及/或修補高深寬比結構的蒸氣輸送頭 |
| WO2020072278A1 (en) | 2018-10-03 | 2020-04-09 | Lam Research Ag | Gas mixture including hydrogen fluoride, alcohol and an additive for preventing stiction of and/or repairing high aspect ratio structures |
| GB201820270D0 (en) | 2018-12-12 | 2019-01-30 | Lam Res Ag | Method and apparatus for treating semiconductor substrate |
| JP2021022598A (ja) * | 2019-07-24 | 2021-02-18 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及び配線パターン形成システム |
| US12568781B2 (en) | 2021-01-25 | 2026-03-03 | Lam Research Corporation | Selective silicon trim by thermal etching |
| WO2026133983A1 (ja) * | 2024-12-18 | 2026-06-25 | 東京エレクトロン株式会社 | 基板処理システム、基板処理方法およびプログラム |
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-
2018
- 2018-10-11 JP JP2020542530A patent/JP7412340B2/ja active Active
- 2018-10-11 SG SG11202003653WA patent/SG11202003653WA/en unknown
- 2018-10-11 CN CN201880068993.2A patent/CN111279454B/zh active Active
- 2018-10-11 US US16/757,732 patent/US11854792B2/en active Active
- 2018-10-11 WO PCT/US2018/055436 patent/WO2019083735A1/en not_active Ceased
- 2018-10-11 KR KR1020207014365A patent/KR20200063242A/ko not_active Ceased
- 2018-10-11 EP EP18871205.3A patent/EP3701561A4/en not_active Withdrawn
- 2018-10-11 KR KR1020247023739A patent/KR102891364B1/ko active Active
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220064917A (ko) | 2020-11-12 | 2022-05-19 | 스미또모 가가꾸 가부시키가이샤 | 염, 산 발생제, 레지스트 조성물 및 레지스트 패턴의 제조 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3701561A1 (en) | 2020-09-02 |
| KR20240116558A (ko) | 2024-07-29 |
| TWI767074B (zh) | 2022-06-11 |
| US20210193456A1 (en) | 2021-06-24 |
| JP2021500756A (ja) | 2021-01-07 |
| TW201931432A (zh) | 2019-08-01 |
| EP3701561A4 (en) | 2021-07-21 |
| US11854792B2 (en) | 2023-12-26 |
| JP7412340B2 (ja) | 2024-01-12 |
| CN111279454A (zh) | 2020-06-12 |
| CN111279454B (zh) | 2025-08-29 |
| KR102891364B1 (ko) | 2025-11-25 |
| SG11202003653WA (en) | 2020-05-28 |
| WO2019083735A1 (en) | 2019-05-02 |
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