TWI767074B - 用以預防高深寬比結構之黏滯作用及/或修補高深寬比結構的系統及方法 - Google Patents
用以預防高深寬比結構之黏滯作用及/或修補高深寬比結構的系統及方法 Download PDFInfo
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- TWI767074B TWI767074B TW107137123A TW107137123A TWI767074B TW I767074 B TWI767074 B TW I767074B TW 107137123 A TW107137123 A TW 107137123A TW 107137123 A TW107137123 A TW 107137123A TW I767074 B TWI767074 B TW I767074B
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- aspect ratio
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/022—Cleaning travelling work
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
- B08B9/0804—Cleaning containers having tubular shape, e.g. casks, barrels, drums
- B08B9/0813—Cleaning containers having tubular shape, e.g. casks, barrels, drums by the force of jets or sprays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
- H10P14/6508—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a liquid
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
- H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0436—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0602—Temperature monitoring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Drying Of Semiconductors (AREA)
- Aiming, Guidance, Guns With A Light Source, Armor, Camouflage, And Targets (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Micromachines (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762575705P | 2017-10-23 | 2017-10-23 | |
| US62/575,705 | 2017-10-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201931432A TW201931432A (zh) | 2019-08-01 |
| TWI767074B true TWI767074B (zh) | 2022-06-11 |
Family
ID=66247965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107137123A TWI767074B (zh) | 2017-10-23 | 2018-10-22 | 用以預防高深寬比結構之黏滯作用及/或修補高深寬比結構的系統及方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11854792B2 (enExample) |
| EP (1) | EP3701561A4 (enExample) |
| JP (1) | JP7412340B2 (enExample) |
| KR (2) | KR20200063242A (enExample) |
| CN (1) | CN111279454B (enExample) |
| SG (1) | SG11202003653WA (enExample) |
| TW (1) | TWI767074B (enExample) |
| WO (1) | WO2019083735A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6875811B2 (ja) * | 2016-09-16 | 2021-05-26 | 株式会社Screenホールディングス | パターン倒壊回復方法、基板処理方法および基板処理装置 |
| TWI821369B (zh) | 2018-08-23 | 2023-11-11 | 奧地利商蘭姆研究股份公司 | 用於防止高深寬比結構的黏滯效應及/或修補高深寬比結構的蒸氣輸送頭 |
| WO2020072278A1 (en) | 2018-10-03 | 2020-04-09 | Lam Research Ag | Gas mixture including hydrogen fluoride, alcohol and an additive for preventing stiction of and/or repairing high aspect ratio structures |
| GB201820270D0 (en) | 2018-12-12 | 2019-01-30 | Lam Res Ag | Method and apparatus for treating semiconductor substrate |
| JP2021022598A (ja) * | 2019-07-24 | 2021-02-18 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及び配線パターン形成システム |
| JP7714438B2 (ja) | 2020-11-12 | 2025-07-29 | 住友化学株式会社 | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
| US12568781B2 (en) | 2021-01-25 | 2026-03-03 | Lam Research Corporation | Selective silicon trim by thermal etching |
| WO2026133983A1 (ja) * | 2024-12-18 | 2026-06-25 | 東京エレクトロン株式会社 | 基板処理システム、基板処理方法およびプログラム |
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| JP6722532B2 (ja) * | 2016-07-19 | 2020-07-15 | 株式会社Screenホールディングス | 基板処理装置および処理カップ洗浄方法 |
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| JP6789038B2 (ja) * | 2016-08-29 | 2020-11-25 | 株式会社Screenホールディングス | 基板処理装置 |
| JP6881922B2 (ja) * | 2016-09-12 | 2021-06-02 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
| JP6875811B2 (ja) | 2016-09-16 | 2021-05-26 | 株式会社Screenホールディングス | パターン倒壊回復方法、基板処理方法および基板処理装置 |
| JP6818484B2 (ja) * | 2016-09-26 | 2021-01-20 | 株式会社Screenホールディングス | 基板洗浄方法、基板洗浄レシピ作成方法、および基板洗浄レシピ作成装置 |
| JP6812284B2 (ja) * | 2017-03-28 | 2021-01-13 | 東京エレクトロン株式会社 | エッチング方法及び記録媒体 |
| JP6811675B2 (ja) * | 2017-04-28 | 2021-01-13 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
| JP7109165B2 (ja) * | 2017-05-30 | 2022-07-29 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6938248B2 (ja) * | 2017-07-04 | 2021-09-22 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
| JP6914138B2 (ja) * | 2017-07-26 | 2021-08-04 | 株式会社Screenホールディングス | 基板処理方法及び基板処理装置 |
| JP7116534B2 (ja) * | 2017-09-21 | 2022-08-10 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
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2018
- 2018-10-11 JP JP2020542530A patent/JP7412340B2/ja active Active
- 2018-10-11 SG SG11202003653WA patent/SG11202003653WA/en unknown
- 2018-10-11 CN CN201880068993.2A patent/CN111279454B/zh active Active
- 2018-10-11 US US16/757,732 patent/US11854792B2/en active Active
- 2018-10-11 WO PCT/US2018/055436 patent/WO2019083735A1/en not_active Ceased
- 2018-10-11 KR KR1020207014365A patent/KR20200063242A/ko not_active Ceased
- 2018-10-11 EP EP18871205.3A patent/EP3701561A4/en not_active Withdrawn
- 2018-10-11 KR KR1020247023739A patent/KR102891364B1/ko active Active
- 2018-10-22 TW TW107137123A patent/TWI767074B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20040020513A1 (en) * | 1997-05-09 | 2004-02-05 | Semitool, Inc. | Methods of thinning a silicon wafer using HF and ozone |
| US20130014785A1 (en) * | 2011-07-13 | 2013-01-17 | Masahiro Kimura | Substrate processing method and substrate processing apparatus |
| US20160254162A1 (en) * | 2013-10-30 | 2016-09-01 | SCREEN Holdings Co., Ltd. | Sacrificial-film removal method and substrate processing device |
| US20170186620A1 (en) * | 2015-12-25 | 2017-06-29 | Tokyo Electron Limited | Substrate processing method and substrate processing system |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20200063242A (ko) | 2020-06-04 |
| EP3701561A1 (en) | 2020-09-02 |
| KR20240116558A (ko) | 2024-07-29 |
| US20210193456A1 (en) | 2021-06-24 |
| JP2021500756A (ja) | 2021-01-07 |
| TW201931432A (zh) | 2019-08-01 |
| EP3701561A4 (en) | 2021-07-21 |
| US11854792B2 (en) | 2023-12-26 |
| JP7412340B2 (ja) | 2024-01-12 |
| CN111279454A (zh) | 2020-06-12 |
| CN111279454B (zh) | 2025-08-29 |
| KR102891364B1 (ko) | 2025-11-25 |
| SG11202003653WA (en) | 2020-05-28 |
| WO2019083735A1 (en) | 2019-05-02 |
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