JP2017118026A - 基板処理方法及び基板処理システム - Google Patents
基板処理方法及び基板処理システム Download PDFInfo
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Abstract
【解決手段】基板処理方法は、複数の凸部(2)を有するパターンが表面に形成された基板に、処理液を供給する液処理工程と、前記基板の表面に存在する前記処理液を除去して、基板を乾燥させる乾燥工程と、前記乾燥工程の後、互いに隣接する前記凸部の貼付部(2a)を分離させる分離工程とを備える。貼付部を分離させることにより、倒れていた凸部が弾性的に直立状態に復元する。分離工程は、例えば、貼付部をガスケミカルエッチングによりエッチングすることにより分離する工程とすることができる。
【選択図】図2
Description
(1)複数の凸部を有するパターンが表面に形成された基板に、処理液を供給する液処理工程
(2)基板の表面に存在する処理液を除去して、基板を乾燥させる乾燥工程
(3)乾燥工程の後、互いに隣接する前記凸部の貼付部を分離させる分離工程
ウエハWが、液処理ユニット200に搬入され、基板保持機構230により水平に保持される。基板保持機構230がウエハWを鉛直軸線周りに回転させる。ウエハWの回転は、液処理ユニット200による一連の工程が終了するまで継続する。処理流体供給部240が薬液を回転するウエハWの表面に供給し、これによりウエハWに薬液処理が施される。薬液処理は、例えば、ウエハW(シリコンからなる)の表面に付着したパーティクルをSC1により除去する処理であってもよい。
次いで、処理流体供給部240からの薬液の供給が停止され、処理流体供給部240からリンス液としての純水(DIW)が回転するウエハWの表面の中心部に供給され、パターンの凹部の内表面を含むウエハW表面上にある薬液及び反応生成物がDIWによって洗い流される。
次いで、処理流体供給部240からのDIWの供給が停止され、処理流体供給部240から有機溶剤例えばイソプロピルアルコール(IPA)が回転するウエハWの表面の中心部に供給され、パターンの凹部の内表面を含むウエハW表面上にあるDIWがIPAによって置換される。
次いで、処理流体供給部240からのIPAの供給が停止され、好ましくはウエハWの回転速度が高められ、これによりウエハWの振り切り乾燥が行われる。IPAはDIWよりも揮発性が高いのでウエハWは速やかに乾燥する。また、IPAはDIWよりも表面張力が低いため後の乾燥工程においてパターン凸部の変形が生じ難い。この乾燥工程において、処理流体供給部240から、乾燥用ガスとしての窒素ガスをウエハWの表面に供給してもよい。また、乾燥工程において、乾燥用ガスのウエハW表面への衝突位置を徐々に半径方向外側にずらしてゆくことにより、ウエハW中心部から周縁部に向けて乾燥領域を徐々に拡げてもよい。
図3は、基板処理装置30の概略構成を示す平面図である。以下では、位置関係を明確にするために、互いに直交するX軸、Y軸およびZ軸を規定し、Z軸正方向を鉛直上向き方向とする。
ロードロック室32は、搬送室50の長手方向(X軸方向)の側面側、正確には、搬送室50のキャリア載置台52が設けられる側面とは反対の側面側(Y軸正方向側)に隣接して2つ設けられる。
次いで、除去処理装置34の構成について図4を参照して説明する。図4は、除去処理装置34の概略構成を示す断面図である。
次いで、熱処理装置33の構成について図5を参照して説明する。図5は、熱処理装置33の概略構成を示す断面図である。
次に、以上のように構成された基板処理装置30におけるウエハWの処理方法、すなわちガスケミカルエッチングを用いたパターンの復元方法について図3〜図5を参照しつつ説明する。
SiO2+4HF→SiF4+2H2O ・・・(1)
SiF4+2NH3+2HF→(NH4)2SiF6 ・・・(2)
(NH4)2SiF6→SiF4+2NH3+2HF ・・・(3)
2 凸部
2a 貼付部
34 分離装置(除去処理装置)
200 液処理装置(液処理ユニット)
Claims (8)
- 複数の凸部を有するパターンが表面に形成された基板に、処理液を供給する液処理工程と、
前記基板の表面に存在する前記処理液を除去して、基板を乾燥させる乾燥工程と、
前記乾燥工程の後、互いに隣接する前記凸部の貼付部を分離させる分離工程と、
を備えた基板処理方法。 - 前記分離工程は、前記基板にエッチングガスを供給して前記貼付部をエッチングすることにより前記貼付部を分離させる、請求項1記載の基板処理方法。
- 前記分離工程の後、前記基板を加熱する加熱処理工程をさらに備えた、請求項2記載の基板処理方法。
- 前記エッチングガスはアンモニアガスとフッ化水素ガスとの混合ガスである、請求項1記載の基板処理方法。
- 前記貼付部が形成される前記凸部の表面は、シリコンまたはシリコン酸化物から形成されている、請求項4記載の基板処理方法。
- 前記液処理工程は、前記基板に薬液を供給する薬液処理工程と、前記基板にリンス液を供給して前記基板の表面から前記薬液を洗い流すリンス工程とを含み、前記乾燥工程は、前記リンス工程の後に行われる、請求項1記載の基板処理方法。
- 前記液処理工程は、前記基板に薬液を供給する薬液処理工程と、前記基板にリンス液を供給して前記基板の表面から前記薬液を洗い流すリンス工程と、前記基板に前記リンス液よりも揮発性の高い溶剤を供給して前記基板の表面のリンス液を前記溶剤に置換する置換工程を含み、前記乾燥工程は、前記置換工程の後に行われる、請求項1記載の基板処理方法。
- 表面に複数の凸部を有するパターンが形成された基板に処理液を供給し、その後、前記基板を乾燥させる液処理装置と、
前記液処理ユニットにより処理された前記基板にエッチングガスを供給して、前記基板の互いに隣接する前記凸部の貼付部をエッチングすることにより前記貼付部を分離させる分離装置と、
を備えた基板処理システム。
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