JP6502198B2 - 基板処理方法および記憶媒体 - Google Patents
基板処理方法および記憶媒体 Download PDFInfo
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Condensed Matter Physics & Semiconductors (AREA)
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- Inorganic Chemistry (AREA)
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Description
まず、ウエハ周辺湿度およびウエハ表面の疎水性とウエハの帯電との関係について確認した実験結果について説明する。試料として、熱酸化処理により表面に熱酸化膜(THOX)を形成したシリコンウエハ(親水性表面を有するウエハW)と、この親水性表面を有するウエハWに対してHMDS(ヘキサメチルジシラザン)を用いた疎水化処理を施したもの(疎水性表面を有するウエハW)との二種類のウエハを用意した。この試料は、表面絶縁層としてのTHOXと、その下層の導電層であるシリコンウエハ自体の2層からなる積層構造の最も単純なモデルである。
上記実験1において帯電が最も生じやすかった「チャンバ20内湿度40%、ウエハの表面が親水性(疎水化処理無し)」の場合において、ウエハWの保持部材31B2との接触部の表面絶縁層の除去の効果について確認する試験を行った。表面絶縁層を除去したこと、ウエハの回転数を1000rpmおよび1500rpmの二水準としたことを除いて、実験条件は実験1と同じである。
SIL 表面絶縁層
31、31B2 基板保持具
16A 第1処理部(ベベルエッチングユニット)
16B 第2処理部(薬液洗浄ユニット)
16C 単一の処理部(処理ユニット)
Claims (9)
- 絶縁性材料により形成された表面絶縁層を有する基板を準備する工程と、
前記基板の周縁部に存在する前記表面絶縁層のうちのフロントベベル上にある部分を残し、バックベベル上にある部分または前記基板の端面にある部分を除去して、前記表面絶縁層を形成する材料よりも導電性が高い下層を露出させる下地露出工程と、
基板保持具により前記基板の前記下層が露出した部分を保持して回転させながら、前記基板に対して処理を行う基板処理工程と、
を備え、
前記基板保持具のうちの少なくとも前記下層と接触する部位は導電性材料により形成されており、前記基板処理工程において、前記基板の表面絶縁層に生じた電荷を前記下層および前記基板保持具を介して逃がす、基板処理方法。 - 前記基板処理工程は、回転する前記基板の中心部に処理液を供給して前記基板に液処理を施す液処理工程、または、前記基板に既に供給された処理液を前記基板を回転させることによって前記基板から振り切り除去する乾燥工程を含む、請求項1記載の基板処理方法。
- 前記基板処理工程は、前記基板に既に供給された処理液を前記基板を回転させることによって前記基板から振り切り除去する乾燥工程を含み、前記絶縁性材料が親水性材料である、請求項1記載の基板処理方法。
- 前記下地露出工程は、前記基板を回転させながら前記基板の周縁部のみに前記絶縁性材料を溶解しうる薬液を供給することにより行われる、請求項1記載の基板処理方法。
- 基板液処理システムの動作を制御するためのコンピュータにより実行されたときに、前記コンピュータが前記基板液処理システムを制御して請求項1から4のうちのいずれか一項に記載の基板処理方法を実行させるプログラムが記録された記憶媒体。
- 絶縁性材料により形成された表面絶縁層を有する基板から、前記基板の周縁部に存在する前記表面絶縁層のうちのフロントベベル上にある部分を残し、バックベベル上にある部分または前記基板の端面にある部分を除去して、前記表面絶縁層を形成する材料よりも導電性が高い下層を露出させる下地露出工程を実行する第1処理部と、
基板保持具により前記基板の前記下層が露出した部分を保持して回転させながら、前記基板に対して処理を行う第2処理部と、を備え、
前記第2処理部の前記基板保持具のうちの少なくとも前記下層と接触する部位は導電性材料により形成されており、前記基板の表面絶縁層に生じた電荷を前記下層および前記基板保持具を介して逃がすことができるように構成されている、基板処理装置。 - 前記下地露出工程で前記基板の端面にある下層が露出させられ、前記基板保持具は、前記基板の前記端面と接触する把持爪を有している、請求項6記載の基板処理装置。
- 前記下地露出工程で前記基板の前記バックベベルにある下層が露出させられ、前記基板保持具は、前記バックベベル上の接触点において前記基板と接触する支持部材を有している、請求項6記載の基板処理装置。
- 前記第1処理部および前記第2処理部が統合されて単一の処理部をなす、請求項6から8のうちのいずれか一項に記載の基板処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2015133662A JP6502198B2 (ja) | 2015-07-02 | 2015-07-02 | 基板処理方法および記憶媒体 |
TW105119433A TWI659464B (zh) | 2015-07-02 | 2016-06-21 | Substrate processing method and memory medium |
KR1020160081656A KR102573015B1 (ko) | 2015-07-02 | 2016-06-29 | 기판 처리 방법, 기판 처리 장치 및 기억 매체 |
US15/198,030 US10002754B2 (en) | 2015-07-02 | 2016-06-30 | Substrate processing method and recording medium |
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JP2015133662A JP6502198B2 (ja) | 2015-07-02 | 2015-07-02 | 基板処理方法および記憶媒体 |
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JP2017017221A JP2017017221A (ja) | 2017-01-19 |
JP6502198B2 true JP6502198B2 (ja) | 2019-04-17 |
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