JP6800993B2 - セラミック材料、バリスタ、並びにセラミック材料及びバリスタの製造方法 - Google Patents
セラミック材料、バリスタ、並びにセラミック材料及びバリスタの製造方法 Download PDFInfo
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- JP6800993B2 JP6800993B2 JP2018548358A JP2018548358A JP6800993B2 JP 6800993 B2 JP6800993 B2 JP 6800993B2 JP 2018548358 A JP2018548358 A JP 2018548358A JP 2018548358 A JP2018548358 A JP 2018548358A JP 6800993 B2 JP6800993 B2 JP 6800993B2
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- 229910010293 ceramic material Inorganic materials 0.000 title claims description 70
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000000919 ceramic Substances 0.000 claims description 48
- 239000000654 additive Substances 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 20
- 230000000996 additive effect Effects 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 13
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 12
- 238000005245 sintering Methods 0.000 claims description 12
- 239000008187 granular material Substances 0.000 claims description 9
- 239000002002 slurry Substances 0.000 claims description 9
- 229910020599 Co 3 O 4 Inorganic materials 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 150000001242 acetic acid derivatives Chemical class 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- 150000004649 carbonic acid derivatives Chemical class 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- 238000001694 spray drying Methods 0.000 claims description 3
- -1 Sb 2 O 3 Inorganic materials 0.000 claims description 2
- 150000004677 hydrates Chemical class 0.000 claims description 2
- 239000012071 phase Substances 0.000 description 23
- 239000010410 layer Substances 0.000 description 13
- 229910052596 spinel Inorganic materials 0.000 description 13
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- 239000002245 particle Substances 0.000 description 7
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
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- 229910007541 Zn O Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
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- 239000007791 liquid phase Substances 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
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- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 230000007613 environmental effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
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- 239000002994 raw material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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Description
0.40mol%≦b1≦0.55mol%、
1.10mol%≦s≦1.90mol%、
0.50mol%≦c1≦0.80mol%、
0.20mol%≦m≦0.30mol%、
0.70mol%≦n≦1.20mol%、
0.25mol%≦y≦0.45mol%、
0.00mol%≦c2≦0.10mol%、
0.003mol%≦a≦0.006mol%、及び
0.005mol%≦b2≦0.015mol%である。
F=(c1+5c2+2s+4y−m−250a)(1−z)/b1
20 電極層
30 絶縁層
A Y−Biリッチ相
B Biリッチ液相
C スピネルZn7Sb2O13相
F 組成係数
E1mA バリスタ勾配
s7 急峻性
Js リーク電流密度
Claims (11)
- 主成分であるZnOと、
Al3+含有溶液、Ba2+含有溶液、及び金属元素を含む少なくとも1種の化合物からなる群から選択される添加物とを含み、前記金属元素は、Bi、Sb、Co、Mn、Ni、Y及びCrからなる群から選択され、
c1は、Co3O4中のCoの当量であり、mは、Mn3O4中のMnの当量であり、
sは、Sb2O3中のSbの当量であり、c2は、Cr2O3中のCrの当量であり、
aは、Al3+の含有量であり、yは、Y2O3中のYの当量であり、b1は、Bi2O3中のBiの当量であり、nは、NiO中のNiの当量であり、b2は、Ba2+の含有量であり、
zは、ZnOの含有量であり、かつ、
0.4mol%≦b1≦0.55mol%、
1.10mol%≦s≦1.90mol%、
0.50mol%≦c1≦0.80mol%、
0.20mol%≦m≦0.30mol%、
0.70mol%≦n≦1.20mol%、
0.25mol%≦y≦0.45mol%、
0.00mol%≦c2≦0.10mol%、
0.003mol%≦a≦0.006mol%、及び
0.005mol%≦b2≦0.015mol%であり、
(c1+5c2+2s+4y−m−250a)(1−z)/b1=Fであり、かつ0.27≦F≦0.43であり、
セラミック材料中の前記添加物の含有量は、≦5mol%であるセラミック材料。 - 少なくとも1つの化合物は、金属酸化物、金属炭酸塩、金属酢酸塩、金属窒化物及びそれらの混合物からなる群から選択される請求項1に記載のセラミック材料。
- 少なくとも1つの化合物は、Bi2O3、Sb2O3、Co3O4、Mn3O4、Ni
O、Y2O3及びCr2O3からなる群から選択される請求項1または2に記載のセラミック材料。 - Al3+含有溶液及びBa2+含有溶液は、
窒化物、酢酸塩、水和物及びそれらの混合物からなる群から選択される溶液である請求項1〜3のいずれか1つに記載のセラミック材料。 - 1020℃以上1060℃以下の焼結温度を有する請求項1〜4のいずれか1つに記載のセラミック材料。
- 請求項1〜5のいずれか1つに記載の焼結セラミック材料を含むセラミック体(10)を含むバリスタ。
- 480V/mm以上640V/mm以下のバリスタ勾配E1mAを有する請求項6に記載のバリスタ。
- 添加物の第1の部分を秤量、混合及びボールミリングし、
ZnO及び添加物の第2の部分を添加し、
均一なスラリーを形成し、
スラリーを噴霧乾燥してセラミック材料の粒状物を形成する製造ステップを有する請求項1〜5の1つに記載のセラミック材料の製造方法。 - 添加物の第1の部分は、金属元素を含有する少なくとも1つの化合物であり、前記金属元素は、Bi、Sb、Co、Mn、Ni、Y、及びCrからなる群から選択され、前記添加物の第2の部分は、Al3+含有溶液及びBa2+含有溶液の少なくとも1つである請求項8に記載の方法。
- 請求項8又は9の1つに記載の方法で製造されたセラミック材料を含有するセラミック体(10)を形成し、
セラミック体(10)に電極層(20)を塗布する製造ステップを含み、前記セラミック材料は、1020℃以上1060℃以下の温度で焼結されてセラミック体を形成するバリスタの製造方法。 - 前記セラミック体(10)の形成は、
請求項8又は9の1つに記載の方法で製造されたセラミック材料の粒状物を乾式成形し、
セラミック材料を脱バインダ処理するステップをさらに含む請求項10に記載の方法。
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