JP6708833B2 - クロスポイントメモリおよびその製造方法 - Google Patents
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
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- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910002909 Bi-Te Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
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- 229910005939 Ge—Sn Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 229910018731 Sn—Au Inorganic materials 0.000 description 1
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- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
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- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
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- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
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- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
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- 229910052697 platinum Inorganic materials 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
- H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
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Description
Claims (5)
- メモリデバイスを製造する方法であって、
基板を提供することと、
前記基板の上にメモリセル材料積層を形成することであって、前記メモリセル材料積層は、第一のアクティブ材料と、前記第一のアクティブ材料の上の第二のアクティブ材料とを含み、前記第一および第二のアクティブ材料のうちの一方はストレージ材料を含み、前記第一および第二のアクティブ材料のうちの他方はセレクタ材料を含む、ことと、
前記メモリセル材料積層をパターン化することであって、前記パターン化することは、
前記メモリセル材料積層の前記第一および第二のアクティブ材料のうちの前記一方を通じてエッチングすることと、
前記第一および第二のアクティブ材料のうちの前記一方を通じてエッチングした後、前記第一および第二のアクティブ材料のうちの前記一方の側壁上に保護ライナーを形成することと、
前記保護ライナーを形成した後で、前記メモリセル材料積層の前記第一および第二のアクティブ材料のうちの前記他方を通じてさらにエッチングすることと、
前記メモリセル材料積層をさらにエッチングした後、前記第一および第二のアクティブ材料のうちの前記一方の前記側壁から前記保護ライナーを除去すること
を含む、ことと、
を含み、
前記保護ライナーを形成することは、プラズマを使用してドライエッチングチャンバ内で堆積することを含み、
前記第一および第二のアクティブ材料のうちの前記の一方を通じてエッチングすることと、前記保護ライナーを形成することは、前記ドライエッチングチャンバ内で、in−situで実施される、
方法。 - 前記第一および第二のアクティブ材料のうちの前記他方を通じてさらにエッチングすることは、前記ドライエッチングチャンバ内でin−situで実施される、請求項1に記載の方法。
- 前記第一および第二のアクティブ材料のうちの前記他方を通じてさらにエッチングすることは、前記第一および第二のアクティブ材料のうちの前記一方の前記側壁上に保護ライナースペーサを残すために、前記保護ライナーをスペーサエッチングすることを含む、請求項1に記載の方法。
- 前記メモリセル材料積層をさらにエッチングした後、前記第一および第二のアクティブ材料のうちの前記一方の側壁上、かつ前記第一および第二のアクティブ材料のうちの前記他方の側壁上に誘電体シーリングライナーを形成することをさらに含む、請求項1に記載の方法。
- 前記第一および第二のアクティブ材料のうちの前記の一方を通じてエッチングすることは、複数の部分的にエッチングされたラインを画定し、前記保護ライナーを形成することは、同一の垂直方向の高さにおいて、前記部分的にエッチングされたラインの幅のうちの5%から25%の厚さを堆積することを含む、請求項1に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US14/189,490 US9806129B2 (en) | 2014-02-25 | 2014-02-25 | Cross-point memory and methods for fabrication of same |
US14/189,490 | 2014-02-25 |
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JP2016553546A Division JP6412949B2 (ja) | 2014-02-25 | 2015-02-09 | クロスポイントメモリおよびその製造方法 |
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US (3) | US9806129B2 (ja) |
EP (2) | EP3742507B1 (ja) |
JP (3) | JP6412949B2 (ja) |
KR (3) | KR102061443B1 (ja) |
CN (2) | CN111490063B (ja) |
SG (2) | SG11201606642TA (ja) |
TW (1) | TWI557891B (ja) |
WO (1) | WO2015130455A1 (ja) |
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KR20150043759A (ko) * | 2013-10-15 | 2015-04-23 | 에스케이하이닉스 주식회사 | 저항 변화 메모리 장치 및 그의 제조방법 |
US10084016B2 (en) | 2013-11-21 | 2018-09-25 | Micron Technology, Inc. | Cross-point memory and methods for fabrication of same |
US9577010B2 (en) | 2014-02-25 | 2017-02-21 | Micron Technology, Inc. | Cross-point memory and methods for fabrication of same |
US9484196B2 (en) | 2014-02-25 | 2016-11-01 | Micron Technology, Inc. | Semiconductor structures including liners comprising alucone and related methods |
US9806129B2 (en) | 2014-02-25 | 2017-10-31 | Micron Technology, Inc. | Cross-point memory and methods for fabrication of same |
US11223014B2 (en) | 2014-02-25 | 2022-01-11 | Micron Technology, Inc. | Semiconductor structures including liners comprising alucone and related methods |
US10249819B2 (en) | 2014-04-03 | 2019-04-02 | Micron Technology, Inc. | Methods of forming semiconductor structures including multi-portion liners |
US9263577B2 (en) | 2014-04-24 | 2016-02-16 | Micron Technology, Inc. | Ferroelectric field effect transistors, pluralities of ferroelectric field effect transistors arrayed in row lines and column lines, and methods of forming a plurality of ferroelectric field effect transistors |
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CN106030842B (zh) | 2020-04-28 |
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JP7284728B2 (ja) | 2023-05-31 |
US11600665B2 (en) | 2023-03-07 |
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CN111490063B (zh) | 2023-11-14 |
US10854674B2 (en) | 2020-12-01 |
TWI557891B (zh) | 2016-11-11 |
US20210091140A1 (en) | 2021-03-25 |
KR20160113188A (ko) | 2016-09-28 |
SG10202005386TA (en) | 2020-07-29 |
SG11201606642TA (en) | 2016-09-29 |
KR20190002754A (ko) | 2019-01-08 |
JP6412949B2 (ja) | 2018-10-24 |
EP3111488B1 (en) | 2020-07-22 |
EP3111488A1 (en) | 2017-01-04 |
TW201545332A (zh) | 2015-12-01 |
US20170365642A1 (en) | 2017-12-21 |
CN106030842A (zh) | 2016-10-12 |
JP2018198321A (ja) | 2018-12-13 |
CN111490063A (zh) | 2020-08-04 |
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