JP6642931B2 - 炭化ケイ素装置におけるオーミック接触のためのシステム及び方法 - Google Patents

炭化ケイ素装置におけるオーミック接触のためのシステム及び方法 Download PDF

Info

Publication number
JP6642931B2
JP6642931B2 JP2013214306A JP2013214306A JP6642931B2 JP 6642931 B2 JP6642931 B2 JP 6642931B2 JP 2013214306 A JP2013214306 A JP 2013214306A JP 2013214306 A JP2013214306 A JP 2013214306A JP 6642931 B2 JP6642931 B2 JP 6642931B2
Authority
JP
Japan
Prior art keywords
silicon carbide
layer
disposed
nickel
nickel silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013214306A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014120758A5 (enExample
JP2014120758A (ja
Inventor
ザカリー・マシュー・スタム
レザ・ガンディー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JP2014120758A publication Critical patent/JP2014120758A/ja
Publication of JP2014120758A5 publication Critical patent/JP2014120758A5/ja
Application granted granted Critical
Publication of JP6642931B2 publication Critical patent/JP6642931B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H10D30/0285—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs using formation of insulating sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0293—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using formation of insulating sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0115—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors to silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/418—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2013214306A 2012-12-18 2013-10-15 炭化ケイ素装置におけるオーミック接触のためのシステム及び方法 Active JP6642931B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/718,031 US9230807B2 (en) 2012-12-18 2012-12-18 Systems and methods for ohmic contacts in silicon carbide devices
US13/718,031 2012-12-18

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017241267A Division JP6537082B2 (ja) 2012-12-18 2017-12-18 炭化ケイ素装置におけるオーミック接触のためのシステム及び方法

Publications (3)

Publication Number Publication Date
JP2014120758A JP2014120758A (ja) 2014-06-30
JP2014120758A5 JP2014120758A5 (enExample) 2016-12-01
JP6642931B2 true JP6642931B2 (ja) 2020-02-12

Family

ID=49378169

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2013214306A Active JP6642931B2 (ja) 2012-12-18 2013-10-15 炭化ケイ素装置におけるオーミック接触のためのシステム及び方法
JP2017241267A Active JP6537082B2 (ja) 2012-12-18 2017-12-18 炭化ケイ素装置におけるオーミック接触のためのシステム及び方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2017241267A Active JP6537082B2 (ja) 2012-12-18 2017-12-18 炭化ケイ素装置におけるオーミック接触のためのシステム及び方法

Country Status (6)

Country Link
US (2) US9230807B2 (enExample)
EP (1) EP2747147B1 (enExample)
JP (2) JP6642931B2 (enExample)
CN (1) CN103872103B (enExample)
BR (1) BR102013026784A2 (enExample)
CA (1) CA2829245C (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9425153B2 (en) 2013-04-04 2016-08-23 Monolith Semiconductor Inc. Semiconductor devices comprising getter layers and methods of making and using the same
JP2016046309A (ja) * 2014-08-20 2016-04-04 住友電気工業株式会社 炭化珪素半導体装置の製造方法
WO2017041268A1 (zh) * 2015-09-10 2017-03-16 中国科学院微电子研究所 碳化硅mosfet器件及其制作方法
US9666482B1 (en) * 2016-09-14 2017-05-30 Infineon Technologies Ag Self aligned silicon carbide contact formation using protective layer
WO2019118845A1 (en) * 2017-12-17 2019-06-20 Applied Materials, Inc. Silicide films through selective deposition
US10629686B2 (en) * 2018-08-02 2020-04-21 Semiconductor Components Industries, Llc Carbon-controlled ohmic contact layer for backside ohmic contact on a silicon carbide power semiconductor device
EP3660885B1 (en) 2018-11-28 2023-05-24 Infineon Technologies AG Group iii nitride device and method of fabricating an ohmic contact for a group iii nitride-based device
CN109979813B (zh) * 2019-03-28 2020-12-11 厦门市三安集成电路有限公司 一种低温碳化硅欧姆接触的制备方法及金属结构
US11075277B2 (en) 2019-06-04 2021-07-27 Genesic Semiconductor Inc. Manufacture of self-aligned power devices
JP7354028B2 (ja) 2020-03-13 2023-10-02 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機
JP7354027B2 (ja) 2020-03-13 2023-10-02 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機
CN115083909A (zh) * 2021-03-16 2022-09-20 全球能源互联网研究院有限公司 一种用于半导体电极制备中的镍腐蚀方法
US20230307507A1 (en) * 2022-03-25 2023-09-28 Fast SiC Semiconductor Incorporated Silicon carbide semiconductor device
CN115440807B (zh) * 2022-10-08 2025-08-01 青岛佳恩半导体有限公司 一种内绝缘结构的igbt结构及其工艺
CN117238969A (zh) * 2023-11-13 2023-12-15 深圳基本半导体有限公司 碳化硅mosfet器件及其制备方法与应用
CN120809576A (zh) * 2024-04-08 2025-10-17 达尔科技股份有限公司 功率半导体结构及其制造方法
CN119170625A (zh) * 2024-09-19 2024-12-20 桑德斯微电子器件（南京）有限公司 一种具有自对准通道和自对准接触区的半导体器件及制备

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2542920B1 (fr) 1983-03-18 1986-06-06 Commissariat Energie Atomique Procede de positionnement d'une ligne d'interconnexion sur un trou de contact electrique d'un circuit integre
JPH0864801A (ja) * 1994-08-26 1996-03-08 Fuji Electric Co Ltd 炭化けい素半導体素子およびその製造方法
US5510281A (en) 1995-03-20 1996-04-23 General Electric Company Method of fabricating a self-aligned DMOS transistor device using SiC and spacers
JPH10125620A (ja) 1996-10-17 1998-05-15 Denso Corp 炭化珪素半導体装置
US6043126A (en) * 1996-10-25 2000-03-28 International Rectifier Corporation Process for manufacture of MOS gated device with self aligned cells
JP3703643B2 (ja) * 1998-12-25 2005-10-05 三菱電機株式会社 半導体装置およびその製造方法
JP4876321B2 (ja) * 2001-03-30 2012-02-15 株式会社デンソー 炭化珪素半導体装置の製造方法
US7297626B1 (en) * 2001-08-27 2007-11-20 United States Of America As Represented By The Secretary Of The Army Process for nickel silicide Ohmic contacts to n-SiC
US8133789B1 (en) * 2003-04-11 2012-03-13 Purdue Research Foundation Short-channel silicon carbide power mosfet
JP4230869B2 (ja) * 2003-09-25 2009-02-25 株式会社東芝 高耐圧半導体装置
JP2005276978A (ja) * 2004-03-24 2005-10-06 Nissan Motor Co Ltd オーミック電極構造体の製造方法、オーミック電極構造体、半導体装置の製造方法および半導体装置
US20060006393A1 (en) * 2004-07-06 2006-01-12 Ward Allan Iii Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices
GB2424312B (en) 2005-03-14 2010-03-03 Denso Corp Method of forming an ohmic contact in wide band semiconductor
US20080108190A1 (en) 2006-11-06 2008-05-08 General Electric Company SiC MOSFETs and self-aligned fabrication methods thereof
US8377812B2 (en) 2006-11-06 2013-02-19 General Electric Company SiC MOSFETs and self-aligned fabrication methods thereof
JP4939960B2 (ja) * 2007-02-05 2012-05-30 株式会社東芝 半導体装置およびその製造方法
JP4539684B2 (ja) * 2007-06-21 2010-09-08 株式会社デンソー 炭化珪素半導体装置およびその製造方法
WO2009019837A1 (ja) * 2007-08-07 2009-02-12 Panasonic Corporation 炭化珪素半導体素子およびその製造方法
JP2009043880A (ja) * 2007-08-08 2009-02-26 Panasonic Corp 炭化珪素半導体装置の製造方法および炭化珪素半導体装置
JP2009194216A (ja) * 2008-02-15 2009-08-27 Hitachi Ltd 半導体装置の製造方法
JPWO2009104299A1 (ja) * 2008-02-22 2011-06-16 住友電気工業株式会社 半導体装置および半導体装置の製造方法
CN102007595B (zh) * 2008-04-15 2013-12-25 住友电气工业株式会社 半导体器件及其制造方法
US8035112B1 (en) * 2008-04-23 2011-10-11 Purdue Research Foundation SIC power DMOSFET with self-aligned source contact
US8188482B2 (en) 2008-12-22 2012-05-29 Infineon Technologies Austria Ag SiC semiconductor device with self-aligned contacts, integrated circuit and manufacturing method
JP2012094555A (ja) * 2009-02-18 2012-05-17 Mitsubishi Electric Corp 半導体装置の製造方法
WO2011027540A1 (ja) * 2009-09-02 2011-03-10 パナソニック株式会社 半導体素子およびその製造方法
JP5777455B2 (ja) * 2011-09-08 2015-09-09 株式会社東芝 半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
US20160118258A1 (en) 2016-04-28
CA2829245C (en) 2020-09-22
EP2747147A2 (en) 2014-06-25
CN103872103A (zh) 2014-06-18
EP2747147A3 (en) 2017-08-02
CA2829245A1 (en) 2014-06-18
US9230807B2 (en) 2016-01-05
BR102013026784A2 (pt) 2014-09-16
US9601332B2 (en) 2017-03-21
US20140167068A1 (en) 2014-06-19
CN103872103B (zh) 2019-08-20
JP6537082B2 (ja) 2019-07-03
JP2018082190A (ja) 2018-05-24
EP2747147B1 (en) 2019-02-06
JP2014120758A (ja) 2014-06-30

Similar Documents

Publication Publication Date Title
JP6537082B2 (ja) 炭化ケイ素装置におけるオーミック接触のためのシステム及び方法
CN101548387B (zh) 碳化硅半导体元件及其制造方法
US8685788B2 (en) Nanowire tunneling field effect transistor with vertical structure and a manufacturing method thereof
CN107564966B (zh) 薄膜晶体管及薄膜晶体管的制造方法、液晶显示面板
CN106663631B (zh) 碳化硅半导体装置及其制造方法
WO2015001863A1 (ja) 炭化珪素半導体装置の製造方法
US8796123B2 (en) Method of manufacturing silicon carbide semiconductor device
CN107230625A (zh) 氮化镓晶体管及其制造方法
CN118136675B (zh) 具备电场调制结构的双沟槽碳化硅mosfet器件及其制造方法
CN103681353B (zh) 含锗为主的沟道层的晶体管装置的制作方法与微电子装置
CN101807597A (zh) 一种自对准亚微米栅结构及其制作方法
JP2008311260A (ja) 半導体装置の製造方法
US10672623B2 (en) Transistor and method of manufacturing the same
CN114975127A (zh) 一种新型碳化硅平面式功率mosfet器件的制造方法
WO2021005896A1 (ja) 半導体装置
CN106847909A (zh) 一种fs型igbt器件的制造方法
WO2021010405A1 (ja) 炭化珪素半導体装置の製造方法及び炭化珪素半導体装置
CN105390509B (zh) 一种阵列基板的制作方法、阵列基板及液晶面板
CN104425572B (zh) 一种自对准硅化物晶体管及其制作方法
JP3498415B2 (ja) 半導体装置及びその製造方法
CN106298954A (zh) 薄膜晶体管及其制作方法
JPH05190854A (ja) 半導体装置の製造方法
JPS62190761A (ja) 半導体装置
CN115274442A (zh) SiC MOSFET及其制备方法和半导体器件
KR20100063336A (ko) 실리콘 카바이드 반도체 소자의 제작 방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161013

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20161013

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170801

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20171031

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20171218

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20180213

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180608

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20180615

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20180817

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190731

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20190731

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20191230

R150 Certificate of patent or registration of utility model

Ref document number: 6642931

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250