JP6642931B2 - 炭化ケイ素装置におけるオーミック接触のためのシステム及び方法 - Google Patents

炭化ケイ素装置におけるオーミック接触のためのシステム及び方法 Download PDF

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JP6642931B2
JP6642931B2 JP2013214306A JP2013214306A JP6642931B2 JP 6642931 B2 JP6642931 B2 JP 6642931B2 JP 2013214306 A JP2013214306 A JP 2013214306A JP 2013214306 A JP2013214306 A JP 2013214306A JP 6642931 B2 JP6642931 B2 JP 6642931B2
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silicon carbide
layer
disposed
nickel
nickel silicide
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JP2014120758A (ja
JP2014120758A5 (enExample
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ザカリー・マシュー・スタム
レザ・ガンディー
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General Electric Co
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General Electric Co
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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2013214306A 2012-12-18 2013-10-15 炭化ケイ素装置におけるオーミック接触のためのシステム及び方法 Active JP6642931B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/718,031 2012-12-18
US13/718,031 US9230807B2 (en) 2012-12-18 2012-12-18 Systems and methods for ohmic contacts in silicon carbide devices

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JP2014120758A JP2014120758A (ja) 2014-06-30
JP2014120758A5 JP2014120758A5 (enExample) 2016-12-01
JP6642931B2 true JP6642931B2 (ja) 2020-02-12

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EP (1) EP2747147B1 (enExample)
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JP2016046309A (ja) * 2014-08-20 2016-04-04 住友電気工業株式会社 炭化珪素半導体装置の製造方法
WO2017041268A1 (zh) * 2015-09-10 2017-03-16 中国科学院微电子研究所 碳化硅mosfet器件及其制作方法
US9666482B1 (en) * 2016-09-14 2017-05-30 Infineon Technologies Ag Self aligned silicon carbide contact formation using protective layer
SG11202005432RA (en) * 2017-12-17 2020-07-29 Applied Materials Inc Silicide films through selective deposition
US10629686B2 (en) * 2018-08-02 2020-04-21 Semiconductor Components Industries, Llc Carbon-controlled ohmic contact layer for backside ohmic contact on a silicon carbide power semiconductor device
EP3660885B1 (en) 2018-11-28 2023-05-24 Infineon Technologies AG Group iii nitride device and method of fabricating an ohmic contact for a group iii nitride-based device
CN109979813B (zh) * 2019-03-28 2020-12-11 厦门市三安集成电路有限公司 一种低温碳化硅欧姆接触的制备方法及金属结构
US11075277B2 (en) 2019-06-04 2021-07-27 Genesic Semiconductor Inc. Manufacture of self-aligned power devices
JP7354028B2 (ja) * 2020-03-13 2023-10-02 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機
JP7354027B2 (ja) * 2020-03-13 2023-10-02 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機
CN115440807B (zh) * 2022-10-08 2025-08-01 青岛佳恩半导体有限公司 一种内绝缘结构的igbt结构及其工艺
CN117238969A (zh) * 2023-11-13 2023-12-15 深圳基本半导体有限公司 碳化硅mosfet器件及其制备方法与应用
CN120809576A (zh) * 2024-04-08 2025-10-17 达尔科技股份有限公司 功率半导体结构及其制造方法

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CN103872103A (zh) 2014-06-18
CA2829245A1 (en) 2014-06-18
BR102013026784A2 (pt) 2014-09-16
US20140167068A1 (en) 2014-06-19
US20160118258A1 (en) 2016-04-28
CN103872103B (zh) 2019-08-20
JP2018082190A (ja) 2018-05-24
CA2829245C (en) 2020-09-22
JP6537082B2 (ja) 2019-07-03
US9230807B2 (en) 2016-01-05
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