JP6624912B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6624912B2
JP6624912B2 JP2015238817A JP2015238817A JP6624912B2 JP 6624912 B2 JP6624912 B2 JP 6624912B2 JP 2015238817 A JP2015238817 A JP 2015238817A JP 2015238817 A JP2015238817 A JP 2015238817A JP 6624912 B2 JP6624912 B2 JP 6624912B2
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JP
Japan
Prior art keywords
wiring
semiconductor device
transistor
connection terminal
external connection
Prior art date
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Active
Application number
JP2015238817A
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English (en)
Japanese (ja)
Other versions
JP2016149528A (ja
Inventor
雅幸 橋谷
雅幸 橋谷
長谷川　尚
尚 長谷川
隆之 高品
隆之 高品
裕之 増子
裕之 増子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ablic Inc
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Ablic Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ablic Inc filed Critical Ablic Inc
Priority to CN201610053787.7A priority Critical patent/CN105870117B/zh
Priority to TW105102884A priority patent/TWI678791B/zh
Priority to US15/013,557 priority patent/US9524961B2/en
Priority to KR1020160013490A priority patent/KR102407896B1/ko
Publication of JP2016149528A publication Critical patent/JP2016149528A/ja
Application granted granted Critical
Publication of JP6624912B2 publication Critical patent/JP6624912B2/ja
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2015238817A 2015-02-05 2015-12-07 半導体装置 Active JP6624912B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201610053787.7A CN105870117B (zh) 2015-02-05 2016-01-27 半导体装置
TW105102884A TWI678791B (zh) 2015-02-05 2016-01-29 半導體裝置
US15/013,557 US9524961B2 (en) 2015-02-05 2016-02-02 Semiconductor device
KR1020160013490A KR102407896B1 (ko) 2015-02-05 2016-02-03 반도체 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015021374 2015-02-05
JP2015021374 2015-02-05

Publications (2)

Publication Number Publication Date
JP2016149528A JP2016149528A (ja) 2016-08-18
JP6624912B2 true JP6624912B2 (ja) 2019-12-25

Family

ID=56691837

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015238817A Active JP6624912B2 (ja) 2015-02-05 2015-12-07 半導体装置

Country Status (3)

Country Link
JP (1) JP6624912B2 (zh)
KR (1) KR102407896B1 (zh)
TW (1) TWI678791B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022113931A (ja) 2021-01-26 2022-08-05 エイブリック株式会社 半導体装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3111938B2 (ja) * 1997-09-16 2000-11-27 日本電気株式会社 半導体装置
KR100307554B1 (ko) * 1998-06-30 2001-11-15 박종섭 Esd 소자를 구비하는 반도체장치
JP4904619B2 (ja) * 2000-11-29 2012-03-28 富士通セミコンダクター株式会社 半導体装置
US7005939B2 (en) * 2003-02-07 2006-02-28 Rambus Inc. Input/output circuit with on-chip inductor to reduce parasitic capacitance
US20050045952A1 (en) 2003-08-27 2005-03-03 International Business Machines Corporation Pfet-based esd protection strategy for improved external latch-up robustness
US20060092592A1 (en) * 2004-10-14 2006-05-04 Taiwan Semiconductor Manufacturing Co. ESD protection circuit with adjusted trigger voltage
JP2006237101A (ja) * 2005-02-23 2006-09-07 Nec Electronics Corp 半導体集積回路装置
JP5226260B2 (ja) * 2007-08-23 2013-07-03 セイコーインスツル株式会社 半導体装置
JP5092766B2 (ja) * 2008-01-21 2012-12-05 ミツミ電機株式会社 半導体装置
US8803290B2 (en) * 2008-10-03 2014-08-12 Qualcomm Incorporated Double broken seal ring
GB0820042D0 (en) 2008-10-31 2008-12-10 Cambridge Silicon Radio Ltd Electrostatic discharge protection
JP2011066246A (ja) * 2009-09-17 2011-03-31 Seiko Instruments Inc 静電気保護用半導体装置
JP2014033064A (ja) * 2012-08-03 2014-02-20 Renesas Electronics Corp 半導体装置
US9054521B2 (en) 2013-06-25 2015-06-09 Hong Kong Applied Science & Technology Research Institute Company, Ltd. Electro-static-discharge (ESD) protection structure with stacked implant junction transistor and parallel resistor and diode paths to lower trigger voltage and raise holding volatge
JP6315786B2 (ja) 2013-06-28 2018-04-25 ルネサスエレクトロニクス株式会社 Ｅｓｄ保護回路、半導体装置、車載用電子装置及び車載用電子システム

Also Published As

Publication number Publication date
KR20160096555A (ko) 2016-08-16
TWI678791B (zh) 2019-12-01
TW201640647A (zh) 2016-11-16
KR102407896B1 (ko) 2022-06-13
JP2016149528A (ja) 2016-08-18

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