JP6411820B2 - 半導体装置および半導体装置の作製方法 - Google Patents

半導体装置および半導体装置の作製方法 Download PDF

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JP6411820B2
JP6411820B2 JP2014178827A JP2014178827A JP6411820B2 JP 6411820 B2 JP6411820 B2 JP 6411820B2 JP 2014178827 A JP2014178827 A JP 2014178827A JP 2014178827 A JP2014178827 A JP 2014178827A JP 6411820 B2 JP6411820 B2 JP 6411820B2
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oxide semiconductor
semiconductor layer
layer
oxide
insulating layer
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JP2015073093A5 (https=
JP2015073093A (ja
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山元　良高
良高 山元
哲弘 田中
哲弘 田中
卓之 井上
卓之 井上
英臣 須澤
英臣 須澤
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Semiconductor Energy Laboratory Co Ltd
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
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    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
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  • Physics & Mathematics (AREA)
  • Thin Film Transistor (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
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JP2014178827A 2013-09-04 2014-09-03 半導体装置および半導体装置の作製方法 Expired - Fee Related JP6411820B2 (ja)

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TWI621130B (zh) 2013-07-18 2018-04-11 半導體能源研究所股份有限公司 半導體裝置及用於製造半導體裝置之方法
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JP6615490B2 (ja) 2014-05-29 2019-12-04 株式会社半導体エネルギー研究所 半導体装置及び電子機器
KR102329498B1 (ko) 2014-09-04 2021-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI766298B (zh) 2014-11-21 2022-06-01 日商半導體能源研究所股份有限公司 半導體裝置
JP6857447B2 (ja) * 2015-01-26 2021-04-14 株式会社半導体エネルギー研究所 半導体装置
JP6436531B2 (ja) * 2015-01-30 2018-12-12 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
KR20180134919A (ko) * 2016-04-22 2018-12-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
WO2017199128A1 (en) 2016-05-20 2017-11-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device or display device including the same
US10043659B2 (en) 2016-05-20 2018-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device or display device including the same
TWI737665B (zh) * 2016-07-01 2021-09-01 日商半導體能源硏究所股份有限公司 半導體裝置以及半導體裝置的製造方法
US10263107B2 (en) * 2017-05-01 2019-04-16 The Regents Of The University Of California Strain gated transistors and method
US11545580B2 (en) * 2017-11-15 2023-01-03 South China University Of Technology Metal oxide (MO semiconductor and thin-film transistor and application thereof
JP7109928B2 (ja) * 2018-01-31 2022-08-01 キオクシア株式会社 トランジスタ及び半導体記憶装置並びにトランジスタの製造方法
JP7186732B2 (ja) * 2018-02-08 2022-12-09 株式会社半導体エネルギー研究所 表示装置
WO2019207411A1 (ja) * 2018-04-27 2019-10-31 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
CN113838801B (zh) * 2020-06-24 2024-10-22 京东方科技集团股份有限公司 半导体基板的制造方法和半导体基板
CN113838938A (zh) * 2020-06-24 2021-12-24 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板以及电子装置
KR102925395B1 (ko) 2020-12-31 2026-02-12 삼성전자주식회사 반도체 패키지
CN117581380A (zh) * 2021-07-09 2024-02-20 索尼半导体解决方案公司 保护电路和半导体器件

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